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MOSFET Breakdown: Dr. Gargi Raina VIT Chennai

This document discusses narrow-channel effects in MOSFETs. It explains that the actual threshold voltage of narrow-channel MOSFETs is larger than predicted by conventional models due to extra depletion charge from the field oxide-overlap area. This additional depletion charge means the gate voltage must support more charge to form the conducting channel. The threshold voltage increase due to narrow-channel effects is modeled as being proportional to the ratio of the maximum depletion width and channel width. For very small channel widths comparable to the depletion width, narrow-channel effects significantly increase the threshold voltage.

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Debdatta Praharaj
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83 views6 pages

MOSFET Breakdown: Dr. Gargi Raina VIT Chennai

This document discusses narrow-channel effects in MOSFETs. It explains that the actual threshold voltage of narrow-channel MOSFETs is larger than predicted by conventional models due to extra depletion charge from the field oxide-overlap area. This additional depletion charge means the gate voltage must support more charge to form the conducting channel. The threshold voltage increase due to narrow-channel effects is modeled as being proportional to the ratio of the maximum depletion width and channel width. For very small channel widths comparable to the depletion width, narrow-channel effects significantly increase the threshold voltage.

Uploaded by

Debdatta Praharaj
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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MOSFET Breakdown

Lecture 6.5

Dr. Gargi Raina VIT Chennai


MF9

Dr. Gargi Raina VIT Chennai


Dr. Gargi Raina VIT Chennai
Narrow-Channel Effects
• Narrow-channel MOSFETs also exhibit typical characteristics which are not accounted
for by the conventional GCA analysis

• Most significant narrow-channel effect  Actual threshold voltage of such a device is


larger than that predicted by the conventional threshold voltage formula

Cross-sectional view (across the channel) of a


narrow-channel MOSFET.

QNC  Extra depletion charge due to narrow-channel effects

Dr. Gargi Raina VIT Chennai


• The oxide thickness in the channel region is tox, while the regions around the channel
are covered by a thickfield oxide (FOX).

• Since the gate electrode also overlaps with the field oxide, a relatively shallow depletion
region forms underneath this FOX-overlap area as well.

• Consequently, the gate voltage must also support this additional depletion charge in
order to establish the conducting channel.

• This effect is negligible in wider devices.

• For MOSFETs with small channel widths, however, the actual threshold voltage
increases as a result of this extra depletion charge.

• The additional contribution to the threshold voltage due to narrow-channel effects


can be modelled as:

where  is an empirical parameter depending on the shape of the fringe depletion


region.
Assuming that the depletion region edges are modeled by quarter-circular arcs, for
example, the parameter K can be found as
Dr. Gargi Raina VIT Chennai
• In all cases, we recognize that the additional contribution to V0 is proportional to
(xdm / W).

• The amount of threshold voltage increase becomes significant only for devices which
have a channel width W of the same order of magnitude as xdm .

• Finally, note that for minimum-geometry MOSFETs which have a small channel
length and a small channel width, the threshold voltage variations due to short-
and narrow-channel effects may tend to cancel each other out.

Dr. Gargi Raina VIT Chennai

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