RCE ELECTRONI

CDEVI
CESANDCI
RCUI
TS
LAB

ELECTRONI
CDEVI
CESANDCI
RCUI
TS
LABORATORYMANUAL(
R16)I
I–B.
Tech.
,ISemest
erECE
Academi
cYear2018-
19

DEPARTMENTOFELECTRONI CSANDCOMMUNI CATIONENGI NEERI

NG
RAMACHANDRACOLLEGEOFENGI NEERI
NG, ELURU–534007
“ ++”
Accr
edit
edbyNAACwi h B Gr
t ade(Appr
ovedbyAI CTE,New
Del
hi&Affi
li
atedt
oJNTUK:Kakinada)WestGodavar
i Di
str
ict
,Andhr
a
Pradesh

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CDEVI
CESANDCI
RCUI
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LAB

1.PNJUNCTI
ONDI
ODECHARACTERI
STI
CS

AIM:1.ToPl ott
heVol
t-Amperechar
acter
ist
icsofGermani
um Diodeunderfor
wardandr
ever
se
bi
ascondit
ions.
2.ToPlott
heVolt-Amper
echar
act
eri
sti
csofSili
conDi
odeunderf
orwardbiascondi
ti
on.

COMPONENTSREQUI RED:
1.Ger
manium(Ge)Diode-OA79 :1No.
2.Si
li
conDiode(Si
)-
1N4007 :1No.
3.Car
bonfil
m Resi
stor(0.
25W)1kΩ :1No.

MEASURINGINSTRUMENTS:
1.Ammeter0-10/20mADC :1No.
2.Ammeter0-500/100µADC :1No.
3.Volt
meter0-
1VDC. :1No.
4.Volt
meter0-
15/30VDC :1No.

MI
SCELLANEOUS:
1.BreadBoard :1No.
2.0-
30VRegul at
edPowerSuppl
y :1No.
3.Connect
ingwir
es :1l
ot

THEORY:
Adiodeconduct sinforwardbias(whenanodei sposi t
ivewithrespectt ocathode).Itdoesnot
conductinreversebias.Whendiodeisforwar
dbi asedthebarri
erpot enti
alatt
hej unct
ionr educes.
Themaj ori
tycarri
ersthendiff
useacrossthejuncti
on.Thiscausest hecur r
enttof l
owt hroughthe
di
ode.Inreversebias,thebar
ri
erpot
ential
incr
eases, andalmostnocur rentf
lowthrought hediode.

From t
hefor
wardchar act
eri
sti
csatagivenoper
ati
ngpointwecandeter
minethestati
cresi
stance
Rdanddynamicresi
stancerdofthedi
ode.Thest
ati
cresi
stancei
sdef
inedasrat
ioofthedcvoltage
todccurr
ent
.Iti
sgivenby

Thedynamicr
esist
ancei
sther
ati
oofasmal
lchangei
nvol
taget
othecor
respondi
ngchangei
n
cur
rent
.Iti
sgi
venby

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MODELGRAPH:

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RCUI
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PROCEDURE:Part–A
GERMANIUM DIODEFORWARDBI
ASCHARACTERI
STI
CS:

1.Connectt hecircuitaspert hecircui

tdiagr
am.
2.Switchont heregul atedPowersuppl yandslowlyi
ncreasethesour
cevoltageandnot
ethe
downt hev olt
ageacr osst hePN Junct i
ondiodeinstepsof0.1Voltandnot edownthe
correspondingdiodecur r
entunderforwardbiascondi
ti
onaspertabl
egiven.
3.Plotthegr aph v ersus ont hegraphSheettothescale.
4.From thegr aphfindoutt hedy namicforwardbi
asresi
stanceoft
hediode

5.Obser
veandnot
edownt
hecuti
nVol
tageoft
hedi
ode.
Par
t–A Part–B
FORWARDBIAS(Ge) REVERSEBI
AS(Ge) FORWARDBI
ASSi
Diode

Bi
as
Bias
Bi
as Vol
t
RPS Volt
a Curr
RPS Cur
re RPS
S. Volt
a ge entIf S. Vol
tag S. age Cur
ren
No. ge (
Vf) in Vol
tag ntI
R Vol
t
No e No (
Vf) tI
fi
n
in (mA)
e i
n age
Volt
s . (
VR)i
n . i
n (
mA)
(
µA)
Vol
ts Vol
t
1. s
2. 1. 1

3. 2. 2

4. 3. 3

5. 4. 4

6. 5. 5

7. 6. 6

8. 7. 7

9. 8. 8

10. 9. 9

11. 10 10
.
12. 11 11
.
13. 12 12
.
14. 13 13
.
15. 14 14
.
16. 15 15
.
17. 16 16
.
17 17
.
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RCUI
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GERMANI
UM DI
ODEREVESEBI
ASCHARACTERI
STI
CS:

1.Connectthecircuitasperthecircuitdiagram.
2.Switchont heRegul atedPowersuppl yandsl owlyincreasethesourceVol
tageandnotethe
VoltageacrossthePNJunct i
ondi odei nstepsof1Vol t.andnotethecor
respondi
ngcurr
ent
fl
owi ngt
hrought hediodeunderr eversebiasconditi
onaspert ablegiv
en.
3.Plotthegraph v ersus ont hegr aphSheett ot
hescal e.
4.From thegraphfindoutt hedynami creversebiasresistanceoft
hediode.

Par
t–B
SI
LICONDI
ODEFORWARDBI
ASCHARACTERI
STI
CS:

1.Connectt hecircui
taspert hecircui
tdiagram.
2.Swi t
chont her egul
atedPowersuppl yandsl owlyi
ncreasethesourcevoltageandnot
ethe
downt hev ol
tageacr osst hePN Junct iondiodeinstepsof0.1Vol tandnot edownthe
cor
respondingdiodecur r
entunderf or
war dbiascondi
ti
onaspert abl
egiven.
3. Pl
otthegraph v ersus ont hegr aphSheettothescale.
4. Fr
om thegr aphfi
ndoutt hedynamicf or
wardbiasresist
anceofthedi
ode

5. Obser
veandnot
edownt
hecuti
nVol
tageoft
hedi
ode.

CALCULATI
ONS:

For
war
dBi
as(
Ge) =

Rev
erseBi
as(
Ge)
=

For
war
dBi
as(
Ge) =

RESULT:

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RCUI
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RCUI
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PRECAUTI
ONS:
1.Connecti
onsmustbedonev erycareful
l
y.
2.Swit
ch-onthepoweronl
yaf t
erthoroughchecki
ngofal
ltheconnect
ions.
3.Readi
ngsshouldbenotedwithoutparal
laxerr
or.
4.Theappli
edvolt
age,cur
rentshouldnotexceedthemaxi
mum rati
ngoft hedi
ode.

VI
VAQUESTI
ONS:
1.Defi
neCut -
involtageofPNjunctiondi
ode.
2.Li
sttheapplicati
onsofPNj uncti
ondiode.
3.Gi
vet y
picalvaluesofcut-
involt
ageforbothGer
mani
um andSi
l
icondi
odes.

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CDEVI
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RCUI
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LAB

2.ZENERDI
ODECHARACTERI
STI
CS

AI
M:1.Toobt aintheForwar
dBiasandr ever
sebiasV-Icharacter
ist
icsofaZenerdiodeandfindout
theZenerBreakdownVoltagefrom theCharacter
ist
ics.
2.Toobt ai
nthevolt
ageregul
atorcharact
eri
sticsofZenerdiode(Zenerdi
odeasv ol
tage
regulat
or)

APPARATUSREQUIRED:
1.ZenerDi
ode(Si
li
con)5Z1V :1No.
2.Carbonf
il
m Resi
stor(
0.25W)1kΩ :1No.

MEASURI
NGINSTRUMENTS
1.DCAmmeter0-
10/20mA :1No.
2.DCVol
tmet
er0-1V :1No.
3.DCVol
tmet
er0-15/
30V :1No.

MI
SCELLANEOUS:
1.0-
30VD. CRegulat
edPowerSuppl
y :1No.
2.BreadBoard :1No.
3.Connect
ingwir
es

THEORY:

APNj unctiondiodedoesnotconductwhenr ever

sebiased.Butifr
eversevolt
ageisincreased,ata
part
icularv ol
tagei tstart
sconductingheav i
ly
.Thisv ol
tageiscalledbreakdownv oltage.High
curr
entt hrought hediodecanpermanent l
ydamageit.ButtheZenerdiodei
nr ever
sebiasmai ntai
ns
almostconst antv ol
tageacrossi
tsterminalswhat
evermaybet heinputvol
tageandcur r
entthrough
i
t.SoaZenerdi odeisaPN- j
unct
iondiodespecial
l
ymadet owor kinbreakdownr egi
on.Itisusedin
volt
ager egulators.

CI
RCUI
TDI
AGRAM:

Rev
erseBi
as

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CDEVI
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RCUI
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ZENERDi
odeasaLoadRegul
ator
:
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MODELGRAPH:

ZenerDi
odeasLoadRegul
ator
PROCEDURE:
FORWARDBIASCHARACTERI
STI
CS:

1.Connectt heci
rcui
taspert hecircuitdi
agr
am.
2.Switchont heD.Cregul
at edpowersuppl yandsl owlyincr
easethesourcev ol
tageandnote
thev olt
ageacrosstheZenerdi odeinst epsof0. 1Vandnot ethecorrespondi
ngdiode
currentunderf
orwardbiascondi tionasperthetabularf
orm gi
ven.
3.Drawgr aphbetweenvol
t ageacrosst hediode(Vf)andcurr
ent(I
f)thr
oughthediodeon
graphsheetforbothZenerdi odes.

REVERSEBI
ASCHARACTERI
STI
CS:

1.Connectt hecir
cui
taspert heci
rcui
tdiagram.
2.Switcht heDCRegul atedpowersuppl yandslowlyincr
easethesourceVoltageandnote
downt heVolt
ageacrossZenerdiodeinstepsoft
he1Vol tandnot
ethecorr
espondingdi
ode
currentaspertabl
egiven.
3.Drawt hegraphbetweenv olt
ageacrosstheZenerdi
ode(VR)andcurr
ent(
IR)t
hroughthe
diodeongr aphsheetforthebothZenerDiodes.
FORWARDBI AS REVERSEBIAS

5.
1V 5.
1V
S. RPS S. RPS
No Vol
tage Bi
as Bi
as
No Vol
tage Cur
rent
Cur
rentI
f
. i
nV Vol
tage Vol
tage
in(mA) . i
nV IRi
n
(
Vf)i
nV (VR)in
(
mA)
Volt
s
1.
1.
2.
2.
3.
3.
4.
4.
5.
5.
6.
6.
7.
7.
8.
8.
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CDEVI
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RCUI
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9. 9.
10. 10.
11. 11.
12. 12.
13. 13.

ZENERDI
ODEASLI
NEREGULATOR ZENERDI
ODEASLOADREGULATOR

5.
1V
RPS 5.
1V
S.
Vol
tage
Bi
as
Cur
rent S.
No. Vol
tage No Load Bi
as
i
nV I
Rin(
mA)
(
VR)i
nV Cur
rent
. r
esi
stance Vol
tage I
Rin(
mA)
1. RL (
VR)inV
2. 1.
3. 2.
4. 3.
5. 4.
6. 5.
7. 6.
8. 7.
9. 8.
10.
9.
11.
10.
12.
11.
12.

ZENERDIODEASVOLTAGEREGULATOR
PROCEDURE
1.Connectt hecir
cui
taspert heci
rcui
tdiagram.
2.Switcht heDCRegul atedpowersuppl yandslowlyincr
easethesourceVoltageandnote
downt heVol t
ageacrossZenerdiodeinstepsoft
he1Vol tandnot
ethecorr
espondingdi
ode
currentaspertabl
egiven.
3.Drawt hegraphbetweenv olt
ageacrosstheZenerdi
ode(VR)andcurr
ent(
IR)t
hroughthe
diodeongr aphsheetforthebothZenerDiodes.

ZENERBREAKDOWNVOLTAGE:Dr awt hetangentonthereversebi

aschar
act
eri
sti
csoftheZener
Diodestart
ingf r
om t
heKneeandtouchingmostoft hepointsoftheCurv
e.Thepointwher
et he
tangenti
ntersect
stheX-
axi
sist
heZenerBreakdownVol t
age.

CALCULATI
ONS

ZenerBr
eakdownVl
ot VBR) =
age(

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LAB

RESULT:

PRECAUTI
ONS:

1.Connecti
onsmustbegivenv erycareful
ly
.
2.Swit
ch-onthepoweronl
yaf t
ert horoughchecki
ngofall
theconnect
ions.
3.Readi
ngsshouldbenotedwit houtanyparall
axerr
or.
4.Theappli
edvolt
age,cur
rentshoul dnotexceedthemaximum r
ati
ngsoftheZenerdi
ode.

VI
VAQUESTI
ONS:

1.Defi
neRever
seBreakdownvolt
age.
2.Li
sttheappl
i
cat
ionsofZenerdi
ode.

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3.CROOPERATI
ONANDI
TSMEASUREMENTS

AI
M:Tomeasur
edi
ff
erentf
requenci
esandv
olt
agesusi
ngDual
TraceCat
hodeRay
Osci
l
loscope.
APPARATUSREQUI
RED:
1.20MHzDual
TraceCRO
2.Funct
ionGener
ator
3.BNCt
oCr
ocodi
l
ePr
obes
Theor
y
Theoper ationofanosci l
loscopei sbestunder stoodbyst udyingt heor i
ginalosci lloscope
basedonacat hoder ayt ube( CRT)popul arl
yknownascat hoder ayosci ll
oscope( CRO) .TheCRO
basicall
yisanel ectronbeam v ol
tmet er.Thev italpartofaCROi stheCRTwhi chmakest heappl i
ed
signalvisi
blebyi l
lumi natingaphosphorscr eenbyanar rowbeam ofel ectrons.Thebl ockdi agram
ofaCRO i sshownbel ow.Underundef l
ect edst atetheel ectronbeam f or msabr ightdotatt he
centerofthescr eenengr av edwi t
har eferencegr i
d.Thegr idnor mal l
ycont ains10di visionsal ongX
axisand8di visi
onsal ongYax i
sandeachdi vi
sionisdividedwi th5t icsgivingar esolutionof0. 2div.
Usual l
ythesignali sappl iedt othev erticaldef lect
ionplatest hatdef lecttheel ectronbeam al ongY
axisandsi multaneousl ythebeam i smov edal ongXax i
sataconst antspeed, facil
itatingdi spl ayof
signalampl i
tudev ersust ime.Ther ateatwhi cht hebeam i sswepthor i
z ontallyisdeci dedbyt he
slopeofasawt oot hwav eform gener atedi nthet i
mebasegener ator.Youcanchanget hescal eof
thet imeax i
sbyadj ustingt i
me/ divknobwhi chcont rolst hesl opeoft hesawt oot hwav eform.
Similarl
yvolt/
divknobcont r
olsthegai noft hev erti
calampl i
fierandchangest hescal eal ongYax is.
Nor mallyyoucansett hev ert
icalsensi t
ivi
tyf rom 1mV/ divto5V/ divandsensi ti
v i
tyoft hetimeaxi s
from 0.5µs/divto0. 2s/ div.
Thepr i
mar yfunctionofanosci l
loscopei stodi splayv oltagewav eformsasaf unct i
onof
ti
mesot hattheengi neercanv i
suali
zethewav eformsandt r
oubleshootci r
cuits.I
nthi
sexper i
ment
youwi l
llearnv erybasi coper ati
onst hati ncludedi splaying two wav eforms,determining thei
r
ampli
tude,fr
equency ,andphase.Youcanchooset wosi gnalsfrom t hesignalgenerator
,theirtype
l
ikesine,tr
iangular,sawtoot h,andsquar ewav e,andconnectt hem t ot het wochannelsoft he
osci
ll
oscopef ordisplay.Youcandi spl
ayoneoft hem,bot hoft hem ort hei
rsum bysel ecti
ngt he
'
Mode'opt i
ons.The v erti
calax i
s( Y)is ampl i
tude and hor izont alax is( X)istime ton t he
osci
ll
oscopedi splay.You can changet hescal eoft hedi splaybyv aryi
ng 'V/Di
v'knob f orY
sensi
ti
vit
y,and'Time/ Div'
knobf orXsensi ti
vity.Theot herknobsar e'X-
POSI TION'and'Y-
POSI TION'
todispl
acet hewav eformsal ongX ax i
sandY axi s,r espectively.Thepr ocessofpl otti
ngt he
waveformsfrom leftendtot herightendoft hedi spl
ayi scalledassweep.
Tr i
ggeringisani mportantoper ati
oni noscil
loscope.Triggerinstantist hetimeat
whichthesweepst ar
tsandt hei nstantisdenot edast=0.Sweepmustst artatt heident
icalpoint
ont hei
nputper i
odicwav ef
orm sot hatrefreshingthedisplaywi t
hi denti
calwav efor
m segment sat
fastrat
er esult
sint heappearanceofast abledisplay.Youwi l
lgetast abledi spl
ayi nmostcases, i
f
youdot hef ol
lowingtwooper ationscor rectly.(
i)Choosethecor rect'source'oftr i
gger(Ch1orCh2
wher ei
nputi sconnect edandwi thr espectt owhichy ouwantt osy nchronizethedi splay
),and( ii
)
adjust'
Lev el
'knobt ospecifyatwhatampl i
tudeoft hewav eformy ouwantt hesweept ostarti.
e.t=
0.Inadditiony oucanspeci fythesl opeoft hewav eform atthet r
iggerinstantbyusi ng+/ -switch.
Youwi l
llearnmor edetailsaboutt heoper at
ionsofanosci l
loscopei nthenextsect i
ononPr ocedure.
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BLOCKDI
AGRAM:

TABULARFORM:

Noof Resul
tant
Appli
ed Ti
me/
Divi
sion
S.No. hor
izontal Fr
equency
.
f
requency
. swi
tchi
n
Div
isions F=1/
t
1 1kHz 0.5ms
1ms
2ms
2 5kHz 0.5ms
0.2ms
0.1ms

3 10kHz 0.2ms
0.1ms
50µs
4 20kHz 0.1ms
50µs
20µs
5 50kHz 50µs
20µs
10µs
6 100kHz 20µs
10µs
5µs
7 500kHz 5µs
2µs
1µs

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CDEVI
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RCUI
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RCE LAB

Vol
ts/
Divi
sionswi
tch Noofver
ti
cal Settheappl
ied Result
ant
S.No
in Div
isi
ons volt
ageto vol
tage
0.5V
1 1V 1V
2V
0.5V
2 1V 2V
2V
1V
3 2V 3V
5V
1V
4 2V 5V
5V
2V
5 5V 10V
10V
5V
6 15V
10V
5V
7 20V
10V
0.5V
0.
5V
8 0.2V
(
500mV)
0.1V
0.2V
0.
1V
9 0.1V
(
100mV)
0.05V
0.1V
10 0.05V 0.
05V(
50mV)
20mV

PROCEDURE:
1.Swi
tchont
heCROandsel
ectMONO/
Dual
oper
ati
on.Obser
vet
heTr
aceont
heCRT.
2.Nowswi
tchont
heFunct
ionGener
ator
,sel
ectsi
newav
eandconnectt
heFunct
ionGener
ator
out
putt
oCH-
1orCH-
11ofCRO.
3.I
fwemeasur
emi
l
liv
olt
sfr
om t
hef
unct
iongener
atorpr
ess20dBor40dBor20dB&40dB
at
tenuat
orswi
tchesdependi
ngupont
her
equi
redv
olt
age.I
fwewanti
nvol
tsr
eleaset
he
at
tenuat
orpushbut
tonsi
ntheoutposi
ti
on.Forv
olt
agev
ari
ati
onuseampl
i
tudecont
rol
.
4.Measur
edi
ff
erentsi
gnal
vol
tagesandf
requenci
esi
nthegi
vent
abul
arf
orm.
FREQUENCYMEASUREMENT:
Sett
heAmpl i
tudeat3V(cal
.Var
iabl
econt
rol
shoul
dbemi
nimum posi
ti
on)
VOLTAGEMEASUREMENT:
Sett
heFrequencyat1kHz.

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RESULT:

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CDEVI
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RCUI
TS
LAB

4(
A).HALFWAVERECTI
FIERWI
THOUTANDWI
THC-
FILTER

AI
M:Torect
if
ythesignal
andthentofi
ndr
ippl
efact
orandper
cent
ageofr
egul
ati
oni
nhal
f
wavewit
houtandwithC-f
il
ter
.

COMPONENTSREQUI RED:
1.StepdownTr ansformer
230V/ 12V–0–12V :1No.
2.Di odesSil
icon( Si
)1N4007 :2Nos.
3.DecadeResi stanceBox :1No.
4.Capacitor 470µF :1No.

MEASURI NGI NSTRUMENTS:

1.Mul ti
met er :1No.
2.20MHzDual Tr aceCRO :1No.
MI SCELLANEOUS:
1.CROPr obes :2No.
2.Connect ingwi res
THEORY:
Electricalpoweri sav ailabl etodomest ic,I ndustrialconsumer sasa440V/ 3phase/ 4wi re/50Hz
suppl y.The3wi reoft hesuppl yar eknownasRed, Yellow,andBl uephasewi res.Thef our thwi r
ei s
knownast heneut ral wi re.Thev oltagebet weenanyt wophase
wiresi s440Vandv ol tagebet weenanyphasewi reandneut ralis230V.Thepowert hati smade
availablet oal llowpowerequi pmenti s230V, si
ngl ephase, t
wowi re50Hz.Oneoft het wowi resi s
knownasphaseandt heot herneut r
alwi re.Theneut ralwirei sgener all
year t
hedatt hesubst ati
on
andatconsumerpr emi ses.Howev er ,230v olt
sci rcuithast wowi rescar ryi
ngpowert ov ariousl oad
pointsi nabui l
di ng.Butmostoft heel ectr onicdev i
cesoper ateatl ow v ol
tagedcsuppl ies;t heni t
becomesnecessar yt ost ep-downt he230V v oltagebymeansoft r
ansf ormer.Lat er,byusi ng
rectifi
ers‘ alternat ingcur rent’isconv er tedt ouni di
recti
onalcur rent.Bymeansoff ilt
er s,near ly
const antD. Ccanbeobt ained.Inor dert okeept heout putDCVol tageconst antataspeci fiedv alue,
i
rrespect iveofl i
nev ol tageandl oadchangesonecanuseav oltager egulatorcircuit.Al mostal l
electronicci rcui t
sr equi reaDCsour ceofpower .Forpor tablel owpowersy stemsbat teriesmaybe
usedmor ef r
equent l
y .Howev er,el ectroni cequi pmenti sener gi
zedbyapowersuppl y,api eceof
equipmentwhi chconv ertst heal ternat ivewav ef
or mf rom t hepowerl i
nesi ntoanessent iall
ydi rect
voltage,t hest udyofact o dcconv ersion i si niti
ated int hissect i
on.Theef fectiv euni later al
condi ti
onsofsemi conduct ordi odescanbeut i
li
zedi nconv erti
ngt heacv oltageintoapul sat ing
unidirectionalv oltagei ndi ffer
entconf igur at i
onsar epossi ble, whileusi ngdi odesandt ransf ormer s.
Theyar er ectif
iers.
HALFWAVERECTI FIER:Adev icesuchast hesemiconduct ordi ode, whichi scapabl eofconv erting
awav ef orm wi thanonz eroav eragecomponenti scal l
edar ect i
fi
er .Thebasi c

ci
rcui
tforhal
fwav
erect
if
icat
ioni
sshown.Si
ncei
nar
ect
if
ierci
rcui
tthei
nput hasa
peakv al
ue whi chisv er
yl ar
gecompar edwi
t hthecutinvolt ofdi ode.Weassumei
nthe
fol
lowingdi
scussi
ont hatVY =0wi t
hthediodei
deali
zedtoresi
stancei
ntheONstat
eandanopen
cir
cuiti
ntheOFFst at
e.Curr
ent‘i’
inthedi
odeorloadRLgiv
enby
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RCUI
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LAB

CI
RCUI
TDI
AGRAM:

+
MODEL
GRAPH:

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TABULARFORM:

HALFWAVERECTI
FIERWI
THOUTFI
LTER

Ri
ppl
eFact
or(
Γ) %ofRegul
ati
on
Load Vdcnol oadVdcful
l
S. l
oad 10
Resi
stance 0
No. inOhms Theor
eti
calPr
act
ical Vdcfulll
oad

1 100
2 300
3 500
4 700
5 900
6 1K
7 3k
8 5k
9 10k
10 100k

HALFWAVERECTI
FIERWI
THC-FI
LTER

Ri
ppl
eFact
or %ofRegul
ati
on
Load
S. γ Vdcnol oadVdcful
l
Resi
stance l
oad 10
No. 0
i
nOhms Theor
eti
calPr
act
ical Vdcfulll
oad
1 100
2 300
3 500
4 700
5 900
6 1K
7 3k
8 5k
9 10k
10 100k
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CDEVI
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RCUI
TS
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iIm Si
nt;i
=Im wh =0<ωΠ
ent
=

wher
e

Adcammet eri
sconnect
edsot hattheneedl
edeflect
ioni
ndi
cat
estheav
erageval
ueofthecur
rent
passi
ngthr
oughit
.Bydefl
ect
ion,theaverageval
ueofperi
odicj
unct
ioni
sgivenbythear
eaofone
cycl
eofcur
vedivi
dedbyabaseex pr
essedbelow
1 2
I nt
I Si dt
dc 2 
0m 

Fort
hehal
fwav
eci
rcui
tunderconsi
der
ati
on,
itf
oll
ows

1
dc 2 
I 

I
mSi
nwtdt
0

Not
ethatt
heupperuni
toft
hei
ntegr
alhasbeenchangedf
rom 2 t
o si
ncet
he
i
nstantaneous‘i
’inthei
nter
nalfr
om t o2 =0andsocontr
ibut
esnot
hingt
othe
i
ntegral.
Thediodev ol
tage:Thedcoutputvol
tagei
scl
ear
lygi
venas
IR
VdcIdcRL  m L

Capaci t
orf il
ter:
I
tconsi stsofacapaci tor‘C’
,placedacr osst herect i
fierout put,i
.e.,loadRL.Ast hedirecti
onof
voltageoft her ecti
fi
eri ncreases,itchargest hecapaci tor sandal sosuppl i
escurrenttothel oad.At
theendofquar tercyclet hecapaci t
ori schargedt opeakv alueVm oft herecti
fi
er.Nowt her ecti
fi
er
outputst artstodecr easeast hecapaci tordischargest hrought heloadandv olt
ageacr ossi ti.
e.,
acrosspar allelcombi nationofRLdecr eases.Thev oltageacr ossthel oadwi l
ldecreaseonlyslightl
y
becausei mmedi at
elythenex tvoltagepeakcomesandr echarget hecapaci t
or.Thisisr epeated
againandagai nandt heout putofr ecti
fierwav ef
orm becomesst raight.I
tiscommonl yusedi n
transist
orr adio–bat teryeliminators.
1
Theor
eti
calcal
cul
atons:γ2
i 3f
CRL

PROCEDURE:

HALFWAVERECTI
FIERWI
OTHOUTC-
FILTER:

1.Connectthecir
cuitaspert heci
rcuitdi
agram.
2.Connectthepri
mar yoft hetr
ansformertomainsuppl
yi.e.230V, 50Hz.
3.Connectthedecader esist
anceboxandsett heRLval
uet o100Ω.
4.Connectthemulti
met eratoutputtermi
nalsandvaryt
hel oadr esi
stance(
DRB)f
rom
100Ωt o2kΩandnot edownt heVacandVdcaspergivent abul
arform.
5.Disconnectl
oadresistance(DRB)andnot edownNoloadv ol
tageVdc.

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RCUI
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6.Connectloadr esi
stanceat100kΩandconnectChannel-
1ofDualTr
aceCROatSecondary
(I
nput)ter
mi nals,
Channel-
2ofdualTraceCROatoutputter
minal
sandobser
veandnote
downt heInputandOut putWavefor
m onGraphSheet.

Cal
cul
ateRi
ppl
eFact
or

V nol
oadV f ul
ll
oad
Cal
cul
ateper
cent
ageofr
egul
ati
on= dc dc 100
Vdcf
ull
load

HALFWAVERECTI
FIERWI
THC-FI
LTER:

1. Connectt hecircuitasperthecircuitdiagr
am.
2.Connectt hepr imaryoft hetransf
ormert omai nsuppl
yi .
e.230V, 50Hz.
3.Connectt hedecader esistanceboxandsett heRLv al
uet o100Ω.
4. Connectt hemul timeteratoutputterminal
sandv arytheloadresi
stance
(DRB)from 100Ωt o2kΩandnot edownt heVacandVdcaspergi ventabul
arform.
5.Di sconnectloadresistance( DRB)andnot edownNol oadvolt
ageVdc.
6.Connectl oadr esi
stanceat100kΩandconnectChannel -
1ofDual Tr
aceCROatSecondary
(I
nput)terminals,
Channel -2ofdualTraceCROatout putterminal
sandobser veandnot
e
downt heInputandOut putWav eform onGr aphSheet.

RESULTS:

PRECAUTI
ONS:
1.Connecti
onsmustbegivenverycaref
ull
y.
2.Swit
ch-onthepoweronlyaf
terthor
oughchecki
ngofall
theconnect
ions.
3.Readi
ngsshouldbetakenwithoutanyparal
l
axerr
or.
4.Theappli
edvolt
ageandcurrentshoul
dnotexceedthemax.r
ati
ngsoft hedi
ode.

VI
VAQUESTI
ONS:

1.Gi
vetheoret
icalv
aluesforripplefact
orandeff
ici
ency.
2.WhatistheneedofaFiltercircui
t?
3.WhatarethePIVsofdiodesusedi nhal
f-
waverect
if
ier
?

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RCE ELECTRONI
CDEVI
CESANDCI
RCUI
TS
LAB

4(
B).FULLWAVERECTI
FIERWI
THOUTANDWI
THC-
FILTER

AI
M:Torect
ifyt
hesi
gnal
andt hent
ofi
ndr
ippl
efact
orandper
cent
ageofr
egul
ati
oni
nful
lwav
e
wi
thoutandwi
thC-
fil
ter
.

COMPONENTSREQUI
RED:
1.St
epdownTr
ansf
ormer
230V/
12V–0–12V :
1No.
2.Di
odesSil
icon(Si)1N4007 :
2Nos.
3.DecadeResist
anceBox :1No.
MEASURI
NGI
NSTRUMENTS:
1. Mul
ti
met
er :
1No.
2. 20MHzDual
TraceCRO :
1No.

MI
SCELLANEOUS:
1.BreadBoard :
1No.
2.CROPr obes :
2No.
3.Connecti
ngwir
es

THEORY:
Electricalpoweri sav ail
ablet odomest ic,Indust ri
alconsumer sasa440V/ 3phase/ 4wi re/50Hz
suppl y.The3wi reoft hesuppl yar eknownasRed, Yel l
ow, andBl uephasewi res.Thef our thwi r
eis
knownast heneut ralwire.Thev oltagebet weenanyt wophasewi resi s440Vandv ol t
agebet ween
anyphasewi reandneut r
alis230V.Thepowert hati smadeav ai
labl etoal llowpowerequi pmenti s
230V,si ngl ephase,t wowi r
e50Hz .Oneoft het wowi resi sknownasphaseandt heot herneut ral
wire.Theneut ralwi r
ei sgener al
lyear thedatt hesubst at i
onandatconsumerpr emi ses.Howev er,
230v oltsci rcuithast wowi rescar r
y i
ngpowert ov ariousl oadpoi nt sinabui l
ding.Butmostoft he
electronicdev icesoper ateatl owv olt
agedcsuppl ies;t heni tbecomesnecessar yt ost ep-downt he
230Vv oltagebymeansoft ransf ormer .Lat er,byusi ngr ectifiers‘
al ternatingcur rent ’isconv er
t edto
unidirectionalcur rent.Bymeansoff il
ters, near l
yconst antD. Ccanbeobt ained.I nor dert okeept he
outputDCVol tageconst antataspeci f
iedv alue,irrespect iveofl i
nev oltageandl oadchangesone
canuseav olt
ager egulatorci r
cui t
.Al mostal lelectroni cci rcuitsrequi reaDCsour ceofpower .For
portabl elowpowersy st
emsbat ter
iesmaybeusedmor ef requent ly .Howev er,electroni cequi pment
i
sener gizedbyapowersuppl y, apieceofequi pmentwhi chconv ert stheal ternativewav eformf r
om
thepowerl inesi ntoanessent i
allydirectv oltage, thest udyofact odcconv ersioni si ni
t i
atedi nt hi
s
section.Theef fectiveunilat
er alcondi tionsofsemi conduct ordi odescanbeut il
izedi nconv erti
ng
theacv oltagei ntoapul sati
nguni directionalv ol
tagei ndi fferentconf igurationsar epossi ble,whi l
e
usingdi odesandt ransformer s.Theyar er ectif
iers.
FULLWAVERECTIFI
ER:Adev
icesuchasthesemiconduct
ordi
ode,whi
chiscapableofconver
ti
ng
awavef
orm wi
thanonzer
oaveragecomponenti
scall
edarect
if
ier
.Thebasi
ccircui
tforhal
fwave
r
ect
if
icat
ioni
sshown.Si
ncei
nar
ect
if
ierci
rcui
tthei
nput hasapeakv
alue whi
ch

i
sver
ylar
gecompar
edwi
tht
hecuti
nvol
t of
di
ode.Weassumei
nthef
oll
owi
ngdi
scussi
ont
hat =0wi
tht
hedi
odei
deal
i
zedt
o

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CDEVI
CESANDCI
RCUI
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LAB

CI
RCUI
TDI
AGRAM:

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RCE ELECTRONI
CDEVI
CESANDCI
RCUI
TS
LAB

MODELGRAPH:

26
Depar
tmentofEl
ect
roni
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cat
ionEngi
neer
ing
RCE ELECTRONI
CDEVI
CESANDCI
RCUI
TSLAB

TABULARFORM:

FULLWAVERECTI
FIERwi
thoutC-
FILTER

Ri
ppl
eFact
or(
Γ) %ofRegul
ati
on
Load VdcnoloadVdcful
l
S. Resi
stance l
oad 100
No. i
nOhms Theor
eti
calPr
act
ical Vdcf
ulll
oad

1 100
2 300
3 500
4 700
5 900
6 1K
7 3k
8 5k
9 10k
10 100k

FULLWAVERECTI
FIERwi
thC-
FILTER

Load Ri
ppl
eFact
or %ofRegul
ati
on
S. γ Vdcnol
oadVdcful
l
Resi
stance l
oad
No. 100
i
n Ohms Theor
eti
calPr
act
ical Vdcf
ull
load
1 100
2 300
3 500
4 700
5 900
6 1K
7 3k
8 5k
9 10k
10 100k
Depar
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CDEVI
CESANDCI
RCUI
TS
LAB

resist
ance i
ntheONst
ateandanopenci
rcui
tint
heOFFst
ate.Cur
rent‘
i
’int
hedi
odeorl
oadRL
givenby
i
ImSnt;
i i
=

wher e
Adcammet eri
sconnect
edsot hattheneedl
edeflect
ioni
ndi
cat
estheav
erageval
ueofthecur
rent
passi
ngthr
oughit
.Bydefl
ect
ion,theaverageval
ueofperi
odicj
unct
ioni
sgivenbythear
eaofone
cycl
eofcur
vedivi
dedbyabaseex pr
essedbelow
1 2
I nt
I Si dt
dc 2 
0m 

Fort
hehal
fwav
eci
rcui
tunderconsi
der
ati
on,
itf
oll
ows
1
dc 2 
I 

I
mSi
nwtdt=I
m /π
0

Not
ethatt
heupperuni
toft
hei
ntegr
alhasbeenchangedf
rom 2π t
oπ si
ncet
he
i
nstantaneous‘i
’inthei
nter
nalfr
om π t o2π=0andsocontr
ibut
esnot
hingt
othe
i
ntegral.
Thediodev ol
tage:Thedcoutputvol
tageiscl
ear
lygi
venas

FULLWAVERECTI FI
ER:Thecircuitofafullwaver ectif
ierisshown.Thiscircuitseemst ocompr i
se
twohal
fwav ecir
cuit
ssoconnectedt hatcondit
ionst akesplacet hr
oughdiodedur ingonehalfofthe
powercycl
eandt hr
oughtheotherdi odeduri
ngt hesecondhal fofthecy
cle.Thecur rentt
ot heload,
whichi
ssum ofthesetwocurr
ent s,hastheform
showninfi
gure.Thedcandrmsv aluesoftheload‘i’andv olt
agesinsuchsy stem arereadi
lyfound
tobe
1 2

dc 2
I 
0I
mSi
nωi
ndt=2I /πm

whereI
m i
smax.cur
rentandVm i
sthepeakt
ransf
ormersecondar
yvol
tagef
rom oneendt
othe
cent
ert
ap

PROCEDURE:
FULLWAVERECTI
FIERWI
THOUTFI
LTER:

1.Connectthecir
cuitaspert heci
rcuitdi
agram.
2.Connecttheprimaryoft hetr
ansformertomainsuppl
yi.
e.,230V, 50Hz
3.Connectthedecader esist
anceboxandsett heRLval
ueto500Ω.
4.ConnecttheMul t
imeteratoutputtermi
nalsandvaryt
heloadr esistance(DRB)
fr
om 500Ωt o5kΩandnot edownt he , aspergi v
ent abularf or
m
5.Disconnectl
oadresistance(DRB)andnot edownNoloadv olt
age .
6.Connectloadresi
stanceat5kΩandconnectChannel –IIofCROatout putt
ermi
nal
sandCH
 –IofCROatSecondar
yInputt
ermi
nal
sobser
veanddr
awt
heI
nputandOut
putWav
efor
ms
ongr
aphSheet
.
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RCE ELECTRONI
CDEVI
CESANDCI
RCUI
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LAB

Cal
cul
ateRi
ppl
eFact
or
V nol
oadV f ul
ll
oad
Cal
cul
ateper
cent
ageofr
egul
ati
on= dc dc 100
Vdcf
ull
load

FULLWAVERECTI
FIERWI
THC-
FILTER:

1.Connectthecir
cuitaspert heci
rcuitdi
agram.
2.Connecttheprimaryoft het r
ansformertomainsuppl
yi.
e. ,230V, 50Hz
3.Connectthedecader esistanceboxandsett heRLval
ueto500Ω.
4.ConnecttheMul t
imeteratout puttermi
nalsandvaryt
hel oadr esistance(DRB)
fr
om 500Ωt o5kΩandnot edownt he , aspergi vent abularf or
m
5.Disconnectl
oadresistance( DRB)andnot edownNoloadv ol t
age .
6.Connectloadresi
stanceat5kΩandconnectChannel –IIofCROatout putt
erminal
sandCH
–IofCROatSecondar yInputterminal
sobserveanddrawt heInputandOut putWavefor
ms
ongr aphSheet
.

Ri
ppl
eFact
or

RESULTS:

VI
VAQUESTI
ONS:

1.Gi
vetheoret
icalv
aluesf orri
pplefact
orandef f
ici
ency
.
2.WhatistheneedofaFi lterci
rcui
t?
3.WhatarethePIVsofdi odesusedi nhal
f-
wav eandful
l-
wav
erect
if
ier
s?
4.Comparecapacit
orfil
terwi t
haninductorfi
l
ter.
Depar
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RCE ELECTRONI
CDEVI
CESANDCI
RCUI
TS
LAB

5.BJTCHARACTERI
STI
CS(
CECONFI
GURATI
ON)

AI
M:ToPl ottheFami
lyofi
nputandout
putChar
act
eri
sti
csofaTr
ansi
storconnect
edi
nCommon
Emit
terConf
igur
ati
on.

COMPONENTSREQUI RED:
1.Transi
storBC107( Si
,NPN) :1No.
2.Carbonfil
m Resi
stor(0.
25W)100kΩ,
1kΩ :1No.each

MEASURINGINSTRUMENTS:
1.DCAmmet er0-10/20mA :
1No.
2.DCAmmet er0-500/1000µA :
1No.
3.Multi
meter :
1No.
4.Volt
meter(
0-1V),
(15/30V) :
1No.each

MI
SCELLANEOUS:
1.BreadBoard :
1No.
2.0-
30V, 1ADualChannel
powersuppl
y :
1No.
3.Connect
ingWir
es

THEORY:
Incommonemi tterconfigurati
ont heemitteriscommont obot hi nputandout put .Fornor mal
oper
ati
ont heBase-Emitterjuncti
oni sf
orwardbiasedandbase- col
lectorjuncti
onisr ever
esbi ased
.Theinputcharacter
ist
icsar eplottedbetweenI BandVBE keepingthev ol
tageVCE constant.This
char
acter
isti
cisv erysi
mi lartot hatofaf orwardbiaseddiode.Thei nputdynamicr esist
ancei s
cal
cul
atedusing

r
i = VBE/ I
B atconst
antVCE.

Theout
putcharacter
ist
icsareplot
tedbet
weenI CandVCE keepi
ngI
Bconst
ant
.Thesecur
vesar
e
al
mosthor
izont
al.Theoutputdy
nami cr
esi
stancei
sgiv
enby ,

r
o = ΔVCE/ I
C atconst
antI
B.

Atagi
venoper
ati
ngpoi
nt,
wedef
ineDCandACcur
rentgai
ns(
bet
a)asf
oll
ows

Cur
rentgai
nβ= I
C/ I
B atconst
antVCE.

CI
RCUI
TDI
AGRAM:

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RCUI
TS
LAB

MODELGRAPHS:

I
nputChar
act
eri
sti
cs Out
putChar
act
eri
sti
cs

PROCEDURE:

I
NPUTCHARACTERI STICS
1.Connectt hecircui
taspert heci
rcuitdiagr
am.
2.Forplotti
ngt heinputcharact
eri
sticstheoutputv
ol t
ageVCEi
skeptconst
antat1Vandf
or
di
ff
erentvaluesofVBE.Not edownt hev al
uesofIC
3.Repeattheabov estepbykeepingVCEat2Vand4V.
4.Tabulateallthereadings.
5.plotthegr aphbet weenVBEandI B f
orconstantVCE

OUTPUTCHARACTERI STICS:
1.Connectthecircui
taspert hecir
cuitdi
agram
2.Forplotti
ngtheout putchar act
eri
sti
cst heinputcur
rentIB i
skeptconstantat
10μAandf ordiff
erentv aluesofVCEnotedownt heval
uesofIC
3.Repeattheabov estepbykeepi ngIBat50Μa, 75μA100μA
4.Tabul
atetheall t
her eadings
5.Plott
hegr aphbetweenVCEandI CforconstantIB
TABULARFORM:
I
NPUTCHARACTERI STICS:
VCE=0V VCE=1V VCE=2V
S. RPS
No. Vol tage VBE I
B VBE I
B VBE I
B

(
V) ( µA) ( V) ( µA) ( V) ( µA)
1
2
3
4
5
6
7

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8
9
10
11
12
13
14
15
16
17
18

OUTPUTCHARACTERI
STI
CS:

IB =10µA IB =20µA IB =30µA

S. RPS
No. Vol
tage VCE I
C VCE I
C VCE I
C

(V) ( mA) (V) ( mA) (V) ( mA)

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18

GRAPH:

1.Pl
ott
hei
nputchar
acteri
sti
csbytaki
ngIBonY-
Axi
sandVBEonX-Axi
s.
2.Pl
ott
heout
putcharact
eri
sti
csbytaki
ngICont
heY-Ax
isandVCEonX-Axi
s.

CALCULATI
ONS:
a)I
nputchar
act
eri
sti
cs:
I
nputr
esi
stance r
i=VBE/ I
BatVCEconst
ant
=
b)Out
putchar
act
eri
sti
cs:

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RCE LAB

Out
putdy
nami
cresi
stance r
o= ΔVCE/ I
CatI
Bconst
ant
=
Cur
rentgai
n β= I
C/ I
B atVCEconst
ant
=
PRECAUTI
ONS:
1.Connecti
onsmustbegivenv erycareful
ly.
2.Swit
ch-onthepoweronl
yaf t
ert horoughchecki
ngofal
ltheconnect
ions.
3.Readi
ngsshouldbenotedwit houtparal
laxerr
or.
4.Theappli
edvolt
age,cur
rentshoul dnotexceedthemaxi
mum rati
ngoft hegi
vent
ransi
stor
.

RESULT:

VI
VAQUESTI
ONS:
1.Li
stv
ari
ousoperati
ngregionsoftr
ansi
stor
.
2.Li
stv
ari
ousbiasi
ngcircui
ts.
3.Gi
vetr
ansi
storcur
rentequati
oninCEconfi
gur
ati
on.

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CESANDCI
RCUI
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LAB

6.FETCHARACTERI
STI
CS(
CommonSour
ceConf
igur
ati
on)

AI
M: Topl
otdr
ainchar
act
eri
sti
csandTr
ansf
erChar
act
eri
sti
csofFi
eldEf
fectt
ransi
stor
.

COMPONENTSREQUI RED:
1.FET(N-
channel
)Sil
iconBF245/
BFW11 :
1No.
2.Car
bonfil
m Resi
stors0.
25W 470Ω :
2Nos.

MEASURINGINSTRUMENTS:
1.DCAmmet er0–20mA :
1No.
2.Volt
meter0–15V :
2Nos.

MI
SCELLANEOUS:
1.BreadBoard :
1No.
2.0–30V, 1ADualChannel
PowerSuppl
y :
1No.
3.Connect
ingwir
es

THEORY:
Li
keanor di
naryjuncti
ont ransist
or,afieldeff
ecttransi
stori
salsoat hr
eet er
minaldevi
ce.Itisa
uni
polardev
ice,becauseitsf unct
iondependsonlyupononet ypeofcarri
er.(
Theordi
narytransi
stor
i
s bipol
ar,hence itis called bipol
ar-
junct
ion t
ransist
or)Unli
ke a BJT,a FET has high input
i
mpedance.Thisisagr eatadv ant
age.
Af i
eldeffecttransistorcanbeeit
heraJFETorMOSFET.Agai naJFETcanei t
herhaveN-channelor
P-channel.AnN- channelJFEThasanNt y
pesemi conductorbar.Thet woendsofwhi chthedrain
andsour cet erminalsont hetwosidesoft hisbar,PNj unct
ionsaremade.ThesePr egi
onsmake
gates.Usually,theset wogatesareconnect edtogethertoform asi ngl
egate.Thegateisgivena
negativ
ebi aswi thr espectt
ot hesource.Thedr ai
ni sgivenpositi
vepotenti
alwit
hrespecttot he
source.IncaseofaPchannel JFET,t
het er
mi nal
sofallthebatter
iesarerev
ersed.
Int
hiscase,PNj uncti
onisreversebiasedandhencethethicknessofthedepleti
onr egi
onincr eases.
AsVGS isdecreasedf r
om z er
o,dr ai
ni sposi
ti
vewithrespectt othesourcewi t
hVGS =0. Now t he
majori
tycarr
iersf l
ow throught heN–channelf r
om sourcet odrai
n.Thereforetheconv entional
cur
rentflowsfrom draintosour ce.Sincethecur
renti
scont rol
ledbyonlymaj ori
tycarri
ers,FETi s
cal
l
edasauni pol ardevi
ce.
Thedr aincurr
entIDiscontr
olledbyt heelect
ri
cfiel
dthatextendsint
othechannelduetor ev
erse
biasedv ol
tageappl
iedtothegat e.Thedraincur
rentdependsonthedrai
nvolt
ageVDS andthegate
voltageVGS.Anyoft hesevariabl esmaybef i
xedandt herel
ati
onbetweentheot hertwoar e
determi nedwhenVDS =VP,IDb ecomesmax imum.WhenVDS isincr
easedbeyondVP,thelengthof
thepi nch–of fregi
onorsaturationr egi
onincr
eases.
Thei
mpor
tantpar
amet
ersofaJFETar
edef
inedbel
ow.
1.Dr
aindynamicresist
ance,
rd=ΔVDS/ID atVGS =const
ant.
2.Mutual
conductance=gm = I
D/ ΔVGS atVDS =const
ant.
3.Ampli
fi
cati
onfactor=µ=gm /rd= VDS/ΔVGS atI
D =c onst
ant
.

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CI
RCUI
TDI
AGRAM:

MODELGRAPH:

Dr
ainChar
act
eri
sti
cs Tr
ansf
erchar
act
eri
sti
cs

PROCEDURE:
STATICDRAINCHARACTERI STI CS
1.All
theconnectionsaremadeaspert hecircuitdi
agram.
2.Toplotthedrai
nchar acteristi
cs,keepVGSconstantat0V.
3.VarytheVGSandobser vet hev al
uesofVDSandI D.
4.Repeattheabov est
eps2, 3f ordi
ffer
entvaluesofVGSat–0.
5Vand–1V.
5.All
thereadingsaretabulat ed.

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CDEVI
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RCUI
TS
RCE LAB

TABULARFORM
STATI
CDRAINCHARACTERI
STI
CS:

VGS=0V VGS=–0.
5V VGS=–1V
VDS(V) ID(
mA) VDS(V) I
D(mA) VDS(V) I
D(mA)
1 1 1
2 2 2
3 3 3
4 4 4
5 5 5
6 6 6
7 7 7
8 8 8
9 9 9
10 10 10

TRANSFERCHARACTERI
STI
CS:

VDS=0V VDS=1V VDS=3V

VGS(V) ID(
mA) VGS(V) ID(
mA) VGS(V) ID(
mA)
0 0 0
-1 -1 -1
-2 -2 -2
-3 -3 -3
-4 -4 -4
-5 -5 -5
-6 -6 -6
-7 -7 -7
-8 -8 -8
-9 -9 -9
-10 -
10 -10

PROCEDURE:
TRANSFERCHARACTERI STICS:
1.Toplotthetransferchar act
eri
sti
cs,
keepVDSconstantat1V.
2.VaryVDSaspert het ableandnotedownt heval
uesofVGSandID.
3.Repeatsteps1and2f ordif
fer
entvaluesofVDSat1Vand5V.
4.Thereadingsaret abulated.

GRAPH:
1.Pl ottheoutputcharacter
ist
icsbyt
akingI
Do nY-
axisandVDSonX-
axisf
orconst
ant
valuesofVGS.
2.Pl ottheTransfercharact
eri
sti
csbytaki
ngIDonY-axi
sandVGSonX-axi
sfor
constantvaluesofVDS.

CALCULATIONS:
1.rd= VDS/ I
D atVGS=const
ant
=
2.µ= VDS/
ΔVGS atI
D =const
ant=
3.Mut
ual
conduct
ance=gm = I
D/ΔVGSatVDS=const
ant

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CESANDCI
RCUI
TS
LAB

=
RESULT:
PRECAUTIONS:
1.Connecti
onsmustbegivenverycareful
ly
.
2.Swit
ch-onthepoweronlyaf
terthoroughchecki
ngofall
theconnect
ions.
3.Readi
ngsshouldbetakenwithoutanyparal
laxerr
or.
4.Theappli
edvolt
ageandcurrentshouldnotexceedthemaxrat
ingsoftheFET.

VI
VAQUESTI
ONS:
1.FETisavoltagecontr
oll
eddev i
ce.Just
if
y.
2.Defi
nePinchoffvolt
age.
3.Whataretheimportantfeat
uresofJFET?
4.Dif
fer
enti
atetheBJTandJFET.
5.Whataretheimportantappl
icat
ionsofJFET?

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CESANDCI
RCUI
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LAB

7.BJTCOMMONEMI
TTERAMPLI
FIER

AI
M:Tomeasur
ethev
olt
agegai
nandpl
ott
hef
requencyr
esponseofCEampl
i
fier
.

COMPONENTSREQUI RED:
1.Tr
ansi
stor(NPN,Si)BC107 :
1No.
2.El
ect
rol
yti
cCapacitor10µF/25V :
3Nos.
3.Carbonfil
m Resi
stors33kΩ,2.
4kΩ,
8.
2kΩ, 1kΩ,4.
7kΩ :
1No.each

MEASURI
NGI
NSTRUMENTS:
1.20MHzDual t
raceCRO.
2.CROProbes

MI
SCELLANEOUS:
1.1MHzFunct i
onGener
ator :1No.
2.BreadBoar
d :1No.
3.0-
30V1ADCpowersuppl y :1No.
4.Connecti
ngwir
es

THEORY:

CommonEmi t
terampl i
fi
erhast heemi t
tert erminalast hecommont erminalbet weeni nputand
output.Theemi tterbasej unct
ionisforwar dbi asedandcol lectorbasejunctioni srev ersebiased,so
thattransist
orr emai nsi nactiveregiont hroughoutt heoper ation.Whenasi nusoi dalACsi gnalis
appli
edati nputt ermi nal
sofci rcuitdur i
ngposi t
ivehalfcy cl
et heforwar dbi asofbaseemi tt
er
j
unct i
onVBEi sincr easedr esult
inginani ncreasei nIB,Thecol l
ectorcurr
entI Cisi ncreasedbyβt i
mes
theincreaseinI B,V CEiscor r
espondinglydecr eased.i.
e.,outputv ol
tageget sdecr eased.Thusi naCE
ampl i
fi
eraposi tivegoi ngsignalisconv ertedi ntoanegat i
vegoi ngout putsi gnali .
e.,180o phase
shif
tisintroducedbet weenout putandi nputsignal anditisanampl i
fi
edv ersionofi nputsi
gnal .

Char
act
eri
sti
csofCEampl
if
ier

1.Lar
gecur r
entgain(AI)
2.Lar
gev ol
tagegain( AV)
3.Lar
gepowergai n(AP=AI.
AV)
4.Phaseshiftof180o
5.Moderateinput&out puti
mpedances.

Thev
olt
agegai
noft
heampl
i
fieri
sgi
vencal
cul
atet
hegai
ninby

Gai
n=

Wher
e,Voi
stheout
putv
olt
age.VSi
sinputv
olt
ageofappl
i
edACsi
gnal
.

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RCUI
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CESANDCI
RCUI
TS
LAB

CI
RCUI
TDI
AGRAM

MODELGRAPH:

Max i
mum gain() =
Lowercut-
offfr
equency( ) =
Uppercut-
offf
requency( ) =
Bandwidth(B.
W)=( ) =
Gainbandwidt
hproduct= (
B.W)=

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CDEVI
CESANDCI
RCUI
TS
LAB

TABULARFORM:

I
nput
Out
putvol
tage Gai
n Gai
nindB
S.No. f
requency
(
V)
(Hz)
1 100
2 200
3 300
4 400
5 500
6 600
7 700
8 800
9 900
10 1k
11 2k
12 3k
13 4k
14 5k
15 6k
16 7k
17 8k
18 9k
19 10k
20 20k
21 30k
22 40k
23 50k
24 100k
25 200k
26 300k
27 400k
28 500k

OBSERVATI
ONS:
Maxi
mum gai
n() =
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CESANDCI
RCUI
TSLAB

Lowercut-
offfr
equency( ) =
Uppercut-
offf
requency( ) =
Bandwidth(B.
W)=( ) =
Gainbandwidt
hproduct= (
B.W)=

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CDEVI
CESANDCI
RCUI
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LAB

PROCEDURE:

1.Connectthecircuitasshowni ntheci
rcuitdi
agram.
2.Connectthesignal gener
at oroutputt
oinputterminal
softheci
rcui
tandchannel–1ofdual
tr
aceCRO.
3.Connecttheout putterminal oft
hecir
cuittochannel–2ofthedualtr
aceCRO.
4.Setthesignalgeneratorout putat20mVsi newav eat100Hz.const
antandfeditt
othe
ci
rcuit
.
5.Varythesignalgeneratorfrequencyfrom 100Hzt o500kHzasperthetabl
egivenand
notethecorrespondingout putvolt
age.
6.Calcul
atethegai n

GRAPH:
Plott
hegr
aphf
requencyv
ersesgai
n(dB)onasemi
loggr
aphsheet
.

RESULT:

VI
VAQUESTI
ONS:
1.Whatarethechar
acteri
sti
csofCEamplif
ier?
2.Whatisthemainappli
cati
onofCEampl i
fi
er?
3.WhatismeantbyBandwi dt
hofanamplifi
er?
4.Fi
ndthephaserel
ati
onbet weeni
nputandoutput
.

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RC ELECTRONI
CDEVI
CESANDCI
RCUI
TS
E LAB

8.EMI
TTERFOLLOWER(
COMMONCOLLECTORAMPLI
FIER)

AI
M:Tomeasur
ethev
olt
agegai
nandpl
ot t
hef
requencyofr
esponseofCC
ampl
i
fier
.
APPARATUSREQUI
RED:
1.Tr
ansi
storBC107 :
1No
2.Capaci
tor
s10µf
/25V :
2No’
s
3.Resi
stor
s220Ω,
1kΩ,
33kΩ,
100kΩ :
1Noeach
4.Funct
iongener
ator :
1No
5.20MHzDual
traceosci
l
loscope :
1No
6.Br
eadboar
d :
1No
7.0-
30V,
1ADCpowersuppl
y :
1No
8.Connect
ingwi
res :
1set

THEORY:
TheCCampl
i
fiercanal
sobecal
l
edasemi
tt
erf
oll
ower
.Thi
sampl
i
fierhasav
olt
agegai
nwhi
chi
s
v
erycl
oset
ouni
ty.Thev
olt
agedr
opacr
osst
heemi
tt
err
esi
stormaybeei
therposi
ti
veornegat
ive
dependi
ngonwhet
heraPNPorNPNt
ransi
stori
sused.Thei
nputr
esi
stanceofemi
tt
erf
oll
oweri
s
hi
gh(
tensofki
l
oohmst
ohundr
edsofki
l
oohms)
.Theout
putr
esi
stanceofemi
tt
erf
oll
oweri
slow
(
about25ohms)
.Thi
sci
rcui
tper
for
msi
mpedancet
ransf
ormat
ionov
erawi
der
angeoff
requenci
es
wi
thv
olt
agegai
ncl
oset
ouni
ty.I
naddi
ti
ont
othi
s,emi
tt
erf
oll
oweri
ncr
easest
hepowerl
eveloft
he
si
gnal
.

CI
RCUI
TDI
AGRAM:

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CDEVI
CESANDCI
RCUI
TS
LAB

GRAPH:

PROCEDURE:
1.Connectt
heci
rcui
tasshowni
ntheci
rcui
tdi
agr
am.
2.Connectt
hesi
gnal
gener
atorout
putt
oinputt
ermi
nal
soft
heci
rcui
tandCH-
Iofdual
trace
CRO.
3.Connectt
heout
putt
ermi
nal
oft
heci
rcui
ttoCH-
IIoft
hedual
traceCRO.
4.Sett
hepowersuppl
yvol
taget
o9Vandconnectt
otheci
rcui
t.
5.Sett
hesi
gnal
gener
atorout
putat100mVconst
antsi
newav
eat100Hzf
requency
.
6.Var
ythef
unct
iongener
atorf
requencyf
rom 100Hzt
o100kHz(
aspert
abl
egi
ven)andnot
e
t
hecor
respondi
ngout
putv
olt
age.
7.Cal
cul
ati
ont
hegai
nAV =VO/
VI
8. Pl
ott
hegr
aphf
requencyv
ersesgai
n(dB)onasemi
logsheet
.

TABULARFORM:
I
nputVol
tageVIn =100mV
Input
Gai
n Gai
nindB
S.No. f
requency Out
putv
olt
age
(Hz)
1 100
2 200
3 300
4 400
5 500
6 600
7 700
8 800
9 900
10 1k
11 2k
12 3k
13 4k
14 5k
15 6k
16 7k
17 8k
18 9k
19 10k
20 20k
22 50k
23 100k

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LAB

24 200k
25 500k

RESULT:

VI
VAQUESTI
ONS:
1.Whati
stheot
hernameofcommoncol
l
ect
orampl
i
fier
?
2.Whatar
ethef
eat
uresofCCampl
i
fier
?
3.Whatar
etheappl
i
cat
ionsofCCampl
i
fier
?

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9.FETCS-AMPLI
FIER(
COMMONSOURCE)

AI
M:Toobt ainthef r
equencyr esponse ofsi
ngl
est
agecommonsour
ceJFET
ampli
fi
er.
APPARATUSREQUI RED:
1.FET (BFW 10orBFW 11) :
1No
2.1MHzFunct i
onGenerat
or :
1No
3.30MHzDual t
raceosci
ll
oscope :
1No
4.BreadBoar d:1No
5.Resistor
s(2.2kΩ,1kΩ,
4.7kΩ :
1Noeach
6.Capcitors10µF :
3No
7.Connectingwires

Theor
y:
Oft hepossi bl
et hreeconf i
gurati
onsofJFETampl i
fi
ers,commonsour ce(CS)conf igur at
ion
ismost lyused.Theadv antageofusi ngCSconf i
gurati
oni sthati thasv eryhi ghi nput
impedance.Ci rcuitdiagram showst heFETampl i
fi
erofcommonsour ceconf i
guration.The
biasingi nputandcoupl i
ngsar eshowni nthef i
gure.Themi dr angev olt
agegai noft he
ampl ifi
erisgivenbyA=gm( r
d| |RL)Att hemi d-fr
equencyr ange,therei snef fectofi nput
andout putcouplingcapacitors.Therefore,t
hev ol
tagegainandphaseangl eareconst antin
thisfrequencyr ange.Theampl ifi
ershowni nt heci r
cuitdiagram hasonl ytwoRCnet wor ks
thati nfl
uencei t
sl ow-fr
equencyr esponse.Onenet worki sformedbyt heout putcoupl ing
capaci t
orsandt heout puti mpedancel ooki
ngatt hedrain.Justasi nt hecaseofBJT
ampl ifi
er,the reactance oft he inputcoupl ing capacitor,reactance increases as t he
frequencydecr eases.Thephaseangl ealsochangeswi thchangei nf r
equency .

As t he fr
equency i
si ncreased bey ond mi d-
frequency r ange t he inter
nalt r
ansi
stor
capacit
anceeffecti
spredomi nant
.ForJFET’si stheinternalcapaci t
ancebet weengateand
source.Thisi
salsocall
edinputcapacitance,.Theot herinternalcapaci t
ance,whicheff
ects
theperformanceisactsasaf eedbackcircuit,whichcoupl esbot h,inputandout put
.The
eff
ectofbot hthesecapaci
tancesist hatitreducedt hegai nappreci abl
yasi nthecaseof
BJT.

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CI
RCUI
TDI
AGRAM:

MODELGRAPH:

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TABULARFORM:

InputVol
tageVin=50mV
I
nputFrequency Output Gai
n Gai
nindB
S.No.
(Hz) Volt
age(V) AV=Vo/
Vi 20logAv
1 50

2 100

3 200

4 500

5 1k

6 5k

7 10k

8 20k

9 30k

10 40k

11 50k

12 60k

13 70k

14 80k

15 90k

16 100k

17 200k

18 300k

19 400k

20 500k

21 1M

OBSERVATI ONS:
Maximum gain(Av) =-
--
--
--
--
--
Lowercut-
offfr
equency(Fl) =-
--
--
--
--
--
Uppercut-
offf
requency(FH) =-
--
--
--
--
--
Bandwidth(B.
W)=( FH –FL) =-
--
--
--
--
--
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Gai
nbandwi
dthpr
oduct=Av(
B.W) =-
--
--
--
--
--

PROCEDURE:
1.Connectt
heci
rcui
tasshowni
ntheci
rcui
tdi
agr
am.
2.Connectt
hesi
gnal
gener
atorout
putt
oinputt
ermi
nal
soft
heci
rcui
tandCH-
Iofdual
trace
CRO.
3.Connectt
heout
putt
ermi
nal
oft
heci
rcui
ttoCH-
IIoft
hedual
traceCRO.
4.Swi
tchont
het
rai
ner
.
5.Sett
hesi
gnal
gener
atorout
putsi
newav
eat50mVconst
ant
.
6.Var
ythef
unct
iongener
atorf
requencyf
rom 50Hzt
o1MHz(
asperi
nthegi
vent
abul
arf
orm)
andnot
ethecor
respondi
ngout
putv
olt
age.
7.Cal
cul
atet
hegai
nAV =VO/
VI
8.Pl
ott
hegr
aphf
requencyv
ersesgai
n(dB)onasemi
logsheet
.

RESULT:

VI
VAQUESTIONS:
1.Classi
fydi
ff
erentAmpl
i
fier
s.
2.Speci
fydi
ff
erentbi
asi
ngt
echni
ques.
3.Whatar
etheappl
i
cat
ionsofFETampl
i
fier
s?

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10.UJTCHARACTERI
STI
CS

AI
M: Toobser
vet
hechar
act
eri
sti
csofUJTandt
ofi
ndt
henegat
iver
esi
stancer
egi
on.
.

COMPONENTSREQUI
RED:

3.UJT2N2646 :1No.
4.Resi
stor
s0.
25W 1kΩ :1No

MEASURI
NGI NSTRUMENTS:
3.Di
git
almult
imet
er :
2No.

MI
SCELLANEOUS:
4.0–30V, 1ADual
Channel
PowerSuppl
y :
1No.
5.BreadBoard :
1No
6.Connecti
ngcar
ds

THEORY:
A Uni -j
unct i
onTr ansi stor( UJT)i sanel ect
ronicsemi conduct ordev icet hathasonl yone
j
unct ion.TheUJTUni -
junctionTr ansist or(UJT)hast hr eet erminals,anemi tter( E)andt wobases
(B1andB2) .Thebasei sf ormedbyl ight l
ydopedn- typebarofsi l
icon.Twoohmi ccont act sB1and
B2ar eat t
achedati t
sends.Theemi tterisofp- typeandi ti sheav ilydoped.Ther esistance
betweenB1andB2,whent heemi tt
eri sopen- cir
cuiti scal l
edi nter-baser esi stance.Theor i
gi nal
uni-
junct iontransistor,orUJT, isasi mpl edev icethati sessent i
allyabarofNt ypesemi conduct or
mat erialintowhi chPt ypemat eri
alhasbeendi ff
usedsomewher ealongi t
sl engt h.The2N2646i s
themostcommonl yusedv ersi onoft heUJT.
TheUJTi sbi asedwi thaposi t
ivev olt
agebet weent het wobases.Thi scausesapot ent i
al
dropal ongt hel engthoft hedev i
ce.Whent heemi tt
erv ol tagei sdr ivenappr oximat elyonedi ode
vol t
ageabov et hev ol
tageatt hepoi ntwher et hePdi f
f usi on( emi t
ter)i s,cur rentwi llbegi nt of low
from t heemi tt
eri ntothebaser egion.Becauset hebaser egi onisv erylight l
ydoped,t headdi tional
cur r
ent( actuall
ychar gesi nt hebaser egion)causes( conduct i
vi
tymodul ation)whi chr educest he
resistanceoft hepor t
ionoft hebasebet weent heemi tt
erj unct i
onandt heB2t er minal .
Thi sreduct i
oni nresist ancemeanst hatt heemi tterj uncti
oni smor ef or wardbi ased,andso
ev enmor ecur rentisinjected.Ov er
all,
theef f
ecti sanegat i
v eresistanceatt heemi ttert ermi nal.Thi s
i
swhatmakest heUJTusef ul,especi al l
yinsi mpleosci l
latorci r
cui t
s.Whent heemi tterv oltage
reachesVp,t hecur r
entst ar tst oincr easeandt heemi tt
erv oltagest artst odecr ease.Thi si s
represent edbynegat iveslopeoft hechar acteristi
cswhi chi sr eferredt oast henegat iver esi
st ance
region, bey ondt hev al
leypoi nt; RB1r eachesmi nimum v al ueandt hisr egion, VEBpr opor t
ional t
oI E.

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CI
RCUI
TDI
AGRAM:

(
E) (
B2)
(
B1)

MODELGRAPH:

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TABULARFORM

VBB=1V VBB=2V VBB=3V

VEB(
V) I
E(
mA) VEB(
V) I
E(
mA) VEB(
V) I
E(
mA)

PROCEDURE:
1.Connect
ioni
smadeasperci
rcui
tdi
agr
am.
2.Out
putv
olt
agei
sfi
xedataconst
antl
evel
andbyv
ary
ingi
nputv
olt
age
cor
respondi
ngemi
tt
ercur
rentv
aluesar
enot
eddown.
3.Thi
spr
ocedur
eisr
epeat
edf
ordi
ff
erentv
aluesofout
putv
olt
ages.
4.Al
lther
eadi
ngsar
etabul
atedandagr
aphi
spl
ott
edbet
weenVEEandI
Efordi
ff
erent
v
aluesofVEB.

RESULT:

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