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Experiment #5-Part#1 JFET Characteristics: Object

The document is about experiment 5 to characterize a JFET transistor. It describes: 1. The purpose is to determine the JFET characteristics and parameters by measuring its transfer and output curves. 2. Key components needed are a test board, power supply, multimeter, N-channel JFET 2N3823/3824, and resistors. 3. The JFET is a voltage-controlled device where drain current is controlled by the reverse-biased gate-source voltage.

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Ilavarasan Tamizh
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217 views5 pages

Experiment #5-Part#1 JFET Characteristics: Object

The document is about experiment 5 to characterize a JFET transistor. It describes: 1. The purpose is to determine the JFET characteristics and parameters by measuring its transfer and output curves. 2. Key components needed are a test board, power supply, multimeter, N-channel JFET 2N3823/3824, and resistors. 3. The JFET is a voltage-controlled device where drain current is controlled by the reverse-biased gate-source voltage.

Uploaded by

Ilavarasan Tamizh
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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University of Anbar Lab.

Name: Electronic I
Experiment no.: 5
College of Engineering
Lab. Supervisor: Munther N. Thiyab
Dept. of Electrical Engineering

Experiment #5- Part#1


JFET Characteristics

Object
The purpose of this experiment is to determine and sketch the characteristics
of the JFET and to find its parameters.
Required Parts and Equipment's
1. Electronic Test Board. (M100)
2. Dual Polarity Variable DC Power Supply
3. Digital Multimeters.
4. N-Channel JFET 2N3823/3824
5. Resistors 207KΩ, 220 Ω.

Theory
The Junction Field Effect Transistor (JFET) is a three-terminal device with one
terminal (called the gate) capable of controlling the current between the other two
terminals (drain and source). The primary difference between FET and BJT
transistors is the fact that the BJT transistor is a current-controlled device, while
the JFET transistor is a voltage-controlled device. The FET transistor is a unipolar
device depending on either electron conduction (N-channel JFET) or hole
conduction (P-channel JFET). In contrast, the BJT transistor is a bipolar device,
meaning that the conduction depends on two charge carriers (electrons and holes)
in the same time.
Another difference between two devices is the high input impedance of the JFET
when compared with the BJT. The input impedance is usually larger than 1 MΩ.
However, typical AC voltage gains for BJT amplifiers are greater than those for
FET amplifiers. Furthermore, FETs are more temperature stable than BJTs and are
usually smaller in size, making them particularly useful in integrated circuit chips.

1
University of Anbar Lab. Name: Electronic I
Experiment no.: 5
College of Engineering
Lab. Supervisor: Munther N. Thiyab
Dept. of Electrical Engineering

The basic construction of an N-channel JFET is shown in Fig.1 together with its
symbol.

Figure 1: N-Channel JFET Structure and Symbol


The drain current (ID) of the JFET is controlled by the application of reverse-biased
voltage between gate and source terminals (VGS). The relationship between ID and
VGS is defined by the well-known Shockley’s equation:

..................................(1)

Where VP is called the pinch-off voltage and IDSS is known as the drain saturation
current. When VGS = VP then ID = 0, and the FET is in the cut-off region. Equation
(1) indicates that the FET is a square-law device.
The relation between ID and VGS is also referred as the transfer characteristic of the
JFET and is presented in Fig.2. This curve is obtained by varying the negative
voltage VGS between VP and 0 and measuring ID for a given value of the drain to
source voltage (VDS). Equation (1) can approximate this curve to an acceptable
level.

2
University of Anbar Lab. Name: Electronic I
Experiment no.: 5
College of Engineering
Lab. Supervisor: Munther N. Thiyab
Dept. of Electrical Engineering

Figure 2: The Transfer Characteristics of the JFET


The circuit used to obtain the JFET characteristics is shown in Fig.3. To obtain the
transfer characteristic, the drain supply voltage VDD should be maintained at a
certain value, and the gate supply voltage is adjusted to several negative values
while recording ID in each step.

Figure 3: A Test Circuit for Getting JFET Characteristics


3
University of Anbar Lab. Name: Electronic I
Experiment no.: 5
College of Engineering
Lab. Supervisor: Munther N. Thiyab
Dept. of Electrical Engineering

On the other hand, to sketch the drain characteristic, the gate-source voltage VGS
must be kept at a certain level while varying VDS in several steps and recording ID
in each step. Figure 4 shows the drain (or output) characteristics of the JFET.

As shown from Fig.4, for small values of VDS (VDS < |VP|) the drain current increases
linearly with VDS. This region is called the linear or Ohmic region in which the
JFET behaves as a voltage-controlled resistor. For larger values of VDS (VDS > |VP|),
the drain current (ID) is approximately constant and enters the saturation region.
The transconductance of the JFET (gm) is defined as the change in drain current
(ΔID) for a given change in gate-to-source voltage (ΔVGS) with the drain-to-source
voltage (VDS) kept constant. It has the unit of Siemens (S).

..................................(2)

4
University of Anbar Lab. Name: Electronic I
Experiment no.: 5
College of Engineering
Lab. Supervisor: Munther N. Thiyab
Dept. of Electrical Engineering

Because the transfer characteristic curve for a JFET is nonlinear, gm varies in value
depending on the location on the curve as depicted in Fig.5. A datasheet normally
gives the value of gm measured at VGS = 0, which is referred as gmo.
Theoretically, gm can be calculated at any point on the transfer characteristic curve
from the following equation:

...................................(3)

Where gmo is found from:

........................................(4)

Figure 5: Graphical Determination of the JFET Transconductance

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