Agilent 4N25

Phototransistor Optocoupler
General Purpose Type
Data Sheet

Features
• Response time (tr: typ., 3 µs at
VCE = 10 V, IC = 2 mA, RL = 100 Ω)
• Current Transfer Ratio
(CTR: min. 20% at IF = 10 mA,
Description Ordering Information VCE = 10 V)
The 4N25 is an optocoupler for Specify part number followed by • Input-output isolation voltage
general purpose applications. It Option Number (if desired). (Viso = 2500 Vrms)
contains a light emitting diode • Dual-in-line package
optically coupled to a photo- 4N25-XXXE • UL approved
transistor. It is packaged in a 6-pin
• CSA approved
DIP package and available in wide- Lead Free
lead spacing option and lead bend Option Number • IEC/EN/DIN EN 60747-5-2
SMD option. Response time, tr , is approved
typically 3 µs and minimum CTR is 000 = No Options • Options available:
20% at input current of 10 mA. 060 = IEC/EN/DIN EN 60747-5-2 – Leads with 0.4" (10.16 mm)
Option spacing (W00)
W00 = 0.4" Lead Spacing Option – Leads bends for surface
300 = Lead Bend SMD Option mounting (300)
500 = Tape and Reel Packaging – Tape and reel for SMD (500)
Option – IEC/EN/DIN EN 60747-5-2
Functional Diagram approvals (060)

PIN NO. AND INTERNAL Schematic Applications

CONNECTION DIAGRAM
• I/O interfaces for computers
6 5 4
1 IF 6 • System appliances, measuring
ANODE BASE
+ instruments
VF • Signal transmission between
–
circuits of different potentials and
CATHODE
2 IC 5
impedances
COLLECTOR

1 2 3 4
EMITTER
1. ANODE 4. EMITTER
2. CATHODE 5. COLLECTOR
3. NC 6. BASE

CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to
prevent damage and/or degradation which may be induced by ESD.
Package Outline Drawings
4N25-000E
7.3 ± 0.5 7.62 ± 0.3
(0.287) (0.3)

3.5 ± 0.5
LEAD FREE (0.138)
A 4N25 6.5 ± 0.5
(0.256) 0.5 TYP.
Y Y WW (0.02)
ANODE 3.3 ± 0.5
2.8 ± 0.5
(0.110) (0.13)

DATE CODE *1 0.26

0.5 ± 0.1 (0.010)
2.54 ± 0.25 (0.02)
DIMENSIONS IN MILLIMETERS AND (INCHES) (0.1) 7.62 ~ 9.98

4N25-060E
7.3 ± 0.5 7.62 ± 0.3
(0.287) (0.3)

3.5 ± 0.5
LEAD FREE (0.138)
A 4N25 V 6.5 ± 0.5
(0.256) 0.5 TYP.
Y Y WW (0.02)
ANODE 3.3 ± 0.5
2.8 ± 0.5
(0.110) (0.13)

DATE CODE *1 0.26

0.5 ± 0.1 (0.010)
2.54 ± 0.25 (0.02)
DIMENSIONS IN MILLIMETERS AND (INCHES) (0.1) 7.62 ~ 9.98

4N25-W00E
7.3 ± 0.5 7.62 ± 0.3
(0.287) (0.3)

3.5 ± 0.5
LEAD FREE (0.138)
A 4N25 6.5 ± 0.5
(0.256)
6.9 ± 0.5
(0.272)
Y Y WW
ANODE 2.8 ± 0.5 2.3 ± 0.5
(0.110) (0.09)

0.5 ± 0.1 0.26

(0.02) (0.010)
2.54 ± 0.25
DATE CODE *1 (0.1) 10.16 ± 0.5
(0.4)
DIMENSIONS IN MILLIMETERS AND (INCHES)

4N25-300E
7.3 ± 0.5 7.62 ± 0.3
(0.287) (0.3)

3.5 ± 0.5
LEAD FREE (0.138)
A 4N25 6.5 ± 0.5
(0.256) 0.35 ± 0.25 0.26
Y Y WW (0.014) (0.010)
ANODE 1.0 ± 0.25
(0.39)
1.2 ± 0.1
(0.047)
2.54 ± 0.25 10.16 ± 0.3
(0.1) (0.4)
DATE CODE *1

DIMENSIONS IN MILLIMETERS AND (INCHES)

2
Solder Reflow Temperature Profile 30 seconds
260°C (Peak Temperature)
1) One-time soldering reflow is 250°C
recommended within the 217°C

Temperature (°C)
condition of temperature and 200°C
time profile shown at right.
150°C
2) When using another soldering 60 sec
method such as infrared ray
lamp, the temperature may rise
partially in the mold of the 25°C
60 ~ 150 sec 90 sec 60 sec
device. Keep the temperature on
the package of the device within Time (sec)

the condition of (1) above.

Absolute Maximum Ratings

Storage Temperature, TS –55˚C to +150˚C
Operating Temperature, TA –55˚C to +100˚C
Lead Solder Temperature, max. 260˚C for 10 s
(1.6 mm below seating plane)
Average Forward Current, IF 80 mA
Reverse Input Voltage, VR 6V
Input Power Dissipation, PI 150 mW
Collector Current, IC 100 mA
Collector-Emitter Voltage, VCEO 30 V
Emitter-Collector Voltage, VECO 7V
Collector-Base Voltage, VCBO 70 V
Collector Power Dissipation 150 mW
Total Power Dissipation 250 mW
Isolation Voltage, V iso (AC for 1 minute, R.H. = 40 ~ 60%) 2500 Vrms

3
Electrical Specifications (TA = 25˚C)
Parameter Symbol Min. Typ. Max. Units Test Conditions
Forward Voltage VF – 1.2 1.5 V IF = 10 mA
Reverse Current IR – – 10 µA VR = 4 V
Terminal Capacitance Ct – 50 – pF V = 0, f = 1 KHz
Collector Dark Current ICEO – – 50 nA VCE = 10 V, IF = 0
Collector-Emitter Breakdown Voltage BVCEO 30 – – V IC = 0.1 mA, IF = 0
Emitter-Collector Breakdown Voltage BVECO 7 – – V IE = 10 µA, IF = 0
Collector-Base Breakdown Voltage BVCBO 70 – – V IC = 0.1 mA, IF = 0
Collector Current IC 2 – – mA IF = 10 mA
*Current Transfer Ratio CTR 20 – – % VCE = 10 V
Collector-Emitter Saturation Voltage VCE(sat) – 0.1 0.5 V IF = 50 mA, IC = 2 mA
Response Time (Rise) tr – 3 – µs VCE = 10 V, IC = 2 mA
Response Time (Fall) tf – 3 – µs RL = 100 Ω
Isolation Resistance Riso 5 x 1010 1 x 1011 – Ω DC 500 V
40 ~ 60% R.H.
Floating Capacitance Cf – 1 – pF V = 0, f = 1 MHz

IC
* CTR = x 100%
IF
PC – COLLECTOR POWER DISSIPATION – mW

100 200 500

TA = 75°C
IF – FORWARD CURRENT – mA
IF – FORWARD CURRENT – mA

80 200 TA = 50°C TA = 0°C

150
100 TA = 25°C TA = -25°C
60 50
100
20
40
10

50 5
20
2
0 0 1
-55 -25 0 25 50 75 100 125 -55 -25 0 25 50 75 100 125 0 0.5 1.0 1.5 2.0 2.5 3.0
TA – AMBIENT TEMPERATURE – °C TA – AMBIENT TEMPERATURE – °C VF – FORWARD VOLTAGE – V

Figure 1. Forward current vs. temperature. Figure 2. Collector power dissipation vs. Figure 3. Forward current vs. forward voltage.
temperature.

4
 RELATIVE CURRENT TRANSFER RATIO – %
CTR – CURRENT TRANSFER RATIO – % 50 15 300
VCE = 10 V TA = 25°C IF = 40 mA PC (MAX.) IF = 10 mA

IC – COLLECTOR CURRENT – mA
TA = 25°C VCE = 10 V
40
IF = 30 mA
10 200
30

IF = 20 mA
20
5 100
RBE =
IF = 10 mA
10
IF = 5 mA
500 kΩ 100 kΩ
0 0 0
0.1 0.2 0.5 1 2 5 10 20 50 100 0 5 10 15 -55 -25 0 25 50 75 100
IF – FORWARD CURRENT – mA VCE – COLLECTOR-EMITTER VOLTAGE – V TA – AMBIENT TEMPERATURE – °C

Figure 4. Current transfer ratio vs. forward Figure 5. Collector current vs. collector- Figure 6. Relative current transfer ratio vs.
current. emitter voltage. temperature.
ICEO – COLLECTOR DARK CURRENT – A

0.3 10-6 100

IF = 50 mA 5 VCE = 10 V tf
VCE(SAT.) – COLLECTOR-EMITTER

IC = 2 mA VCE = 10 V 50 tr
10-7 IC = 2 mA
SATURATION VOLTAGE – V

5 td
TA = 25°C

RESPONSE TIME – µs
20
10-8
0.2 5 10
10-9 5
5
-10 2
10
5 ts
0.1 1
10-11
5 0.5
10-12
5 0.2
0 10-13 0.1
-55 -25 0 25 50 75 100 -55 -25 0 20 40 80 100 125 0.05 0.1 0.2 0.5 1 2 5 10 20 50
TA – AMBIENT TEMPERATURE – °C TA – AMBIENT TEMPERATURE – °C RL – LOAD RESISTANCE – kΩ

Figure 7. Collector-emitter saturation Figure 8. Collector dark current vs. Figure 9. Response time vs. load resistance.
voltage vs. temperature. temperature.

5 7
VCE = 5 V TA = 25°C
VCE(SAT.) – COLLECTOR-EMITTER

IC = 2 mA 6
SATURATION VOLTAGE – V

IC = 0.5 mA

IC = 2 mA

IC = 6 mA

0 TA = 25°C
VOLTAGE GAIN AV – dB

-5 4
IC = 1 mA

IC = 3 mA

IC = 7 mA

RL = 10 kΩ
3
-10
RL = 1 kΩ
2
RL = 100 Ω
-15
1

-20 0
0.5 1 2 5 10 20 50 100 200 500 0 5 10 15 20 25 30

f – FREQUENCY – kHz IF – FORWARD CURRENT – mA

Figure 10. Frequency response. Figure 11. Collector-emitter saturation

voltage vs. forward current.

5
Test Circuit for Response Time Test Circuit for Frequency Response

VCC VCC

RL RL
RD RD
INPUT
OUTPUT OUTPUT

INPUT

OUTPUT 10%

90%

td ts

tr tf

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Data subject to change.
Copyright © 2004 Agilent Technologies, Inc.
Obsoletes 5989-0292EN
November 3, 2004
5989-1733EN