< SMALL-SIGNAL TRANSISTOR >

2SA1235A 2SA1602A
2SA1993
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(Super mini type)

FEATURE OUTLINE DRAWING Unit：ｍｍ

・ Super mini package for easy mounting 2SA1602A 2SA1235A

・Excellent linearity of DC forward gain

2.1 2.5

・Small collector to emitter saturation voltage 0.425 1.25 0.425 0.5 1.5 0.5
VCE(sat)=-0.3V max

0.4
0.3
APPLICATION

0.95
0.65
① ①

1.90
For Hybrid IC,small type machine low frequency

2.9
2.0
1.3

0.95
0.65
voltageAmplify application ② ③ ② ③

1.1
0.9

0.16
0.15

0.8
0.7

0～0.1
0～0.1

JEITA：SC-70 JEITA：SC-59
JEDEC：－ JEDEC：TO-236 類似
TERMINAL CONNECTER TERMINAL CONNECTER
①：BASE ①：BASE
②：EMITTER ②：EMITTER
③：COLLECTOR ③：COLLECTOR

2SA1993

4.0
3.0

0.1
1.0
1.0
14.0

0.45

1.27 1.27
0.4
2.5

① ② ③

JEITA：－
JEDEC：－
TERMINAL CONNECTER
①：EMITTER
②：COLLECTOR
③：BASE

ISAHAYA ELECTRONICS CORPORATION

 < SMALL-SIGNAL TRANSISTOR >

2SA1235A 2SA1602A
2SA1993
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(Super mini type)
MAXIMUM RATINGS（Ｔａ＝２５℃）
Ratings
Symbol Parameter Unit
2SA1235A 2SA1602A 2SA1993
ＶＣＢＯ Collector to Base voltage -60 -60 -50 V
ＶＥＢＯ Emitter to Base voltage -6 V
Collector to Emitter
ＶＣＥＯ -50 V
voltage
Ｉ Ｃ Collector current 200 mA
ＰＣ Collector dissipation 200 200 450 mW
Ｔｊ Junction temperature +150 ℃
Ｔｓｔｇ Storage temperature -55～+150 ℃

ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parame Limits
Symbol Test conditions Unit
ter Min Typ Max
Ｖ（ＢＲ）ＣＥＯ C to E break down voltage I C=-100μA，RBE=∞ -50 V
Ｉ ＣＢＯ Collector cut off current 2SA1993 VCB=-50V，I E =0 -0.1 μA
Emitter cut off current 2SA1235A,2SA1602A VCB=-60V，I E =0 -0.1
Ｉ EＢＯ DC forward current gain VEB=-6V，I C =0 -0.1 μA
ｈＦＥ* DC forward current gain VCE=-6V，I C =-1mA 150 500 －
2SA1993 50 －
ｈＦＥ C to E Saturation Vlotage VCE=-6V，I C =-0.1mA
2SA1235A,2SA1602A 90 －
ＶＣＥ（ｓａｔ） Gain bandwidth product I C =-100mA，I B =-10mA -0.3 V
ｆＴ Collector output capacitance VCE=-6V，I E =10mA 200 MHz
Cob C to E break down voltage VCB=-6V，I E =0,f=1MHz 4.0 pF
NF Noise figure VCE=-6V，I E =0.3mA,f=100Hz,RG=10ｋΩ 20 dB
*： It shows hFE classification in below table.
E F
ｈFE 2SA1235A
2SA1602A 150～300 250～500
2SA1993

ISAHAYA ELECTRONICS CORPORATION

 < SMALL-SIGNAL TRANSISTOR >

2SA1235A 2SA1602A
2SA1993
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(Super mini type)

2SA1235A、2SA1602 2SA1993

COLLECTOR DISSIPATION VS.AMBIENT TEMPERTURE COLLECTOR DISSIPATION VS.AMBIENT TEMPERTURE

250 500
COLLECTOR DISSIPATION Pc (mW)

COLLECTOR DISSIPATION Pc (mW)

200 400

150 300

100 200

50 100

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
AMBIENT TEMPERTURE Ta (℃) AMBIENT TEMPERTURE Ta (℃)

ISAHAYA ELECTRONICS CORPORATION

 < SMALL-SIGNAL TRANSISTOR >

2SA1235A 2SA1602A
2SA1993
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(Super mini type)

COMMON EMITTER OUTPUT COMMON EMITTER TRANSFER

-50 -50
0.18mA Ta=25℃
0.16mA Ta=25℃
0.14mA VCE=-6V
-40 -40
COLLECTOR CURRENT IC(mA)

COLLECTOR CURRENT IC(mA)

0.12mA

0.10mA
-30 -30

0.08mA

-20 0.06mA -20

0.04mA
-10 -10
0.02mA

IB=0
-0 -0
-0 -1 -2 -3 -4 -5 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0
COLLECTOR EMITTER VOLTAGE VCE(V) BASE TO EMITTER VOLTAGE VBE(V)

DC FORWARD CURRENT GAIN GAIN BAND WIDTH PRODUCT

VS. COLLECTOR CURRENT VS. EMITTER CURRENT
10000 250
Ta=25℃
Ta=25℃
VCE=-6V
VCE=-6V
RELATIVE VALUE OF DC FORWARD CURRENT

100(@IC=-1mA)
GAIN BAND WIDTH PRODUCT fT(MHz)

200
1000

150
GAIN hFE

100

100

10
50

1 0
-0.1 -1 -10 -100 -1000 0.1 1 10 100
EMITTER CURRENT IE(mA)
COLLECTOR CURRENT IC(mA)

COLLECTOR OUTPUT CAPACITANCE

VS. COLLECTOR TO BASE VOLTAGE
100
Ta=25℃
COLLECTOR OUTPUT CAPACITANCE Cob(pF)

IE=0
f=1MHz

10

0.1
-0.1 -1 -10 -100
COLLECTOR TO BASE VOLTAGE VCB(V)

ISAHAYA ELECTRONICS CORPORATION

 Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan

Keep safety first in your circuit designs!

·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
Notes regarding these materials
·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the
customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging
ISAHAYA or third party.
·ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights ,
originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.
·All information contained in these materials, including product data, diagrams and charts, represent information on products
at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice
due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics
Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed
herein.
·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used
under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes ,
such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
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·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these
materials or the products contained therein.

Jan.2007