P8008HVA

Dual N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID

80V 68mΩ @VGS = 10V 3.2A

SOP-8

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS 80
V
Gate-Source Voltage VGS ±25
TA = 25 °C 3.2
Continuous Drain Current ID
TA= 70 °C 2.5
1
A
Pulsed Drain Current IDM 18
Avalanche Current IAS 15.8
Avalanche Energy L =0.1mH EAS 12.5 mJ
TA = 25 °C 1.5
Power Dissipation PD W
TA= 70°C 1
Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Lead RqJL 25
°C / W
Junction-to-Ambient RqJA 80
1
Pulse width limited by maximum junction temperature.

REV 1.0 1 2014/9/4

P8008HVA
Dual N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 80
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1 1.9 3
Gate-Body Leakage IGSS VDS = 0V, VGS = ±25V ±100 nA
VDS = 64V, VGS = 0V 1
Zero Gate Voltage Drain Current IDSS mA
VDS = 64V, VGS = 0V, TJ = 70 °C 10
Drain-Source On-State VGS = 10V, ID = 3A 44 68
RDS(ON) mΩ
Resistance1 VGS = 4.5V, ID = 1A 47 78
Forward Transconductance1 gfs VDS = 10V, ID = 3A 17 S
DYNAMIC
Input Capacitance Ciss 576
Output Capacitance Coss VGS = 0V, VDS = 25V, f = 1MHz 63 pF
Reverse Transfer Capacitance Crss 42
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.2 Ω
2 Qg
Total Gate Charge 15
2
VDS = 80V, VGS = 10V,
Gate-Source Charge Qgs 2 nC
ID = 3A
2 Qgd
Gate-Drain Charge 5
2 td(on)
Turn-On Delay Time 14
2 tr
Rise Time VDS = 40V, 6
nS
Turn-Off Delay Time 2 td(off) ID @ 3A, VGS = 10V, RG = 6Ω 38
Fall Time2 tf 8
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Current IS 1.1 A
1 VSD IF = 3A, VGS = 0V
Forward Voltage 1.3 V
Reverse Recovery Time trr IF = 3A, dlF/dt = 100A / μS 30 nS
Reverse Recovery Charge Qrr 40 nC
1
Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
2
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.

REV 1.0 2 2014/9/4

P8008HVA
Dual N-Channel Enhancement Mode MOSFET

REV 1.0 3 2014/9/4

P8008HVA
Dual N-Channel Enhancement Mode MOSFET

REV 1.0 4 2014/9/4

P8008HVA
Dual N-Channel Enhancement Mode MOSFET

REV 1.0 5 2014/9/4