19-1182; Rev 2; 12/98

NUAL
KIT MA
V A L U ATION S H EET
E S DATA
FO L L O W
Switch-Mode Lithium-Ion
Battery-Charger
General Description ____________________________Features

MAX745
The MAX745 provides all functions necessary for ♦ Charges 1 to 4 Lithium-Ion Battery Cells
charging lithium-ion battery packs. It provides a regu- ♦ ±0.75% Voltage-Regulation Accuracy
lated charging current of up to 4A without getting hot, Using 1% Resistors
and a regulated voltage with only ±0.75% total error at
♦ Provides up to 4A without Excessive Heating
the battery terminals. It uses low-cost, 1% resistors to
set the output voltage, and a low-cost N-channel MOS- ♦ 90% Efficient
FET as the power switch. ♦ Uses Low-Cost Set Resistors and
The MAX745 regulates the voltage set point and charg- N-Channel Switch
ing current using two loops that work together to transi- ♦ Up to 24V Input
tion smoothly between voltage and current regulation. ♦ Up to 18V Maximum Battery Voltage
The per-cell battery voltage regulation limit is set ♦ 300kHz PWM Operation: Low-Noise,
between 4.0V and 4.4V using standard 1% resistors, Small Components
and then the number of cells is set from 1 to 4 by pin-
strapping. Total output voltage error is less than ±0.75%. ♦ Stand-Alone Operation; No Microcontroller
Needed
For a similar device with an SMBus™ microcontroller
interface and the ability to charge NiCd and NiMH cells,
refer to the MAX1647 and MAX1648. For a low-cost ________________________Applications
lithium-ion charger using a linear-regulator control Lithium-Ion Battery Packs
scheme, refer to the MAX846A. Desktop Cradle Chargers
Cellular Phones
Ordering Information
Notebook Computers
PART TEMP. RANGE PIN-PACKAGE Hand-Held Instruments
MAX745C/D 0°C to +70°C Dice*
MAX745EAP -40°C to +85°C 20 SSOP Pin Configuration appears on last page.
*Dice are tested at TA = +25°C.
___________________________________________________Typical Operating Circuit
VIN
(UP TO 24V)
DCIN VL

BST
CELL CELL0
COUNT N
CELL1 DHI
SELECT
MAX745
ON
LX
OFF THM/SHDN

REF DLO N
ICHARGE
SETI

VADJ CS

RSENSE
SET PER STATUS
CELL VOLTAGE
BATT
WITH 1% RESISTORS
CCV CCI GND IBAT PGND
VOUT
1–4 Li+ CELLS
(UP TO 18V)

SMBus is a trademark of Intel Corp.

________________________________________________________________ Maxim Integrated Products 1

For free samples & the latest literature: http://www.maxim-ic.com, or phone 1-800-998-8800.
For small orders, phone 1-800-835-8769.
 Switch-Mode Lithium-Ion
Battery Charger
ABSOLUTE MAXIMUM RATINGS
MAX745

DCIN to GND ............................................................-0.3V to 26V BATT, CS to GND .....................................................-0.3V to 20V

BST, DHI to GND ......................................................-0.3V to 30V PGND to GND..........................................................-0.3V to 0.3V
BST to LX ....................................................................-0.3V to 6V VL Current ...........................................................................50mA
DHI to LX............................................(LX - 0.3V) to (BST + 0.3V) Continuous Power Dissipation (TA = +70°C)
LX to GND ................................................-0.3V to (DCIN + 0.3V) SSOP (derate 8.00mW/°C above +70°C) ......................640mW
VL to GND...................................................................-0.3V to 6V Operating Temperature Range ...........................-40°C to +85°C
CELL0, CELL1, IBAT, STATUS, CCI, CCV, Storage Temperature.........................................-60°C to +150°C
REF, SETI, VADJ, DLO, THM/SHDN to GND ..-0.3V to (VL + 0.3V) Lead Temperature (soldering, 10sec) .............................+300°C

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.

ELECTRICAL CHARACTERISTICS
(VDCIN = 18V, VBATT = 8.4V, TA = 0°C to +85°C. Typical values are at TA = +25°C, unless otherwise noted.)

PARAMETER CONDITIONS MIN TYP MAX UNITS

SUPPLY AND REFERENCE
DCIN Input Voltage Range 6 24 V
DCIN Quiescent Supply Current 6.0V < VDCIN < 24V, logic inputs = VL 4 6 mA
VL Output Voltage 6.0V < VDCIN < 24V, no load 5.15 5.40 5.65 V
TA = +25°C 4.17 4.2 4.23
REF Output Voltage V
6.0V < VDCIN < 24V 4.16 4.2 4.24
REF Output Load Regulation 0 < IREF < 1mA 10 20 mV/mA
SWITCHING REGULATOR
Oscillator Frequency 270 300 330 kHz
DHI Maximum Duty Cycle 89 93 %
DHI On-Resistance Output high or low 4 7 Ω
DLO On-Resistance Output high or low 6 14 Ω
VL < 3.2V, VBATT = 12V 5
BATT Input Current µA
VL > 5.15V, VBATT = 12V 500
VL < 3.2V, VCS = 12V 5
CS Input Current µA
VL > 5.15V, VCS = 12V 400
BATT, CS Input Voltage Range 4V < VBATT < 16V 0 19 V
CS to BATT Offset Voltage (Note 1) ±1.5 mV
CS to BATT SETI = VREF (full scale) 170 185 205
mV
Current-Sense Voltage SETI = 400mV 14 18 22
Not including VADJ resistor tolerance -0.65 0.65
Absolute Voltage Accuracy %
With 1% tolerance VADJ resistors -0.75 0.75

2 _______________________________________________________________________________________
 Switch-Mode Lithium-Ion
Battery Charger
ELECTRICAL CHARACTERISTICS (continued)

MAX745
(VDCIN = 18V, VBATT = 8.4V, TA = 0°C to +85°C. Typical values are at TA = +25°C, unless otherwise noted.)

PARAMETER CONDITIONS MIN TYP MAX UNITS

ERROR AMPLIFIERS
GMV Amplifier Transconductance 800 µA/V
GMI Amplifier Transconductance 200 µA/V
GMV Amplifier Output Current ±130 µA
GMI Amplifier Output Current ±320 µA
CCI Clamp Voltage with Respect to CCV 1.1V < VCCV < 3.5V 25 80 200 mV
CCV Clamp Voltage with Respect to CCI 1.1V < VCCI < 3.5V 25 80 200 mV
CONTROL INPUTS/OUTPUTS
CELL0, CELL1 Input Bias Current -1 1 µA
SETI Input Voltage Range (Note 1) 0 VREF V
VADJ Adjustment Range 10 %
SETI, VADJ Input Bias Current -10 10 nA
VADJ Input Voltage Range 0 VREF V
THM/SHDN Rising Threshold 2.20 2.3 2.34 V
THM/SHDN Falling Threshold 2.01 2.1 2.19 V
Charger in current-regulation mode,
STATUS Output Low Voltage 0.2 V
STATUS sinking 1mA
Charger in voltage-regulation mode,
STATUS Output Leakage Current 1 µA
VSTATUS = 5V
IBAT Output Current vs.
VIBAT = 2V 0.9 µA/mV
Current-Sense Voltage
IBAT Compliance Voltage Range 0 2 V

ELECTRICAL CHARACTERISTICS
(VDCIN = 18V, VBATT = 8.4V, TA = -40°C to +85°C, unless otherwise noted. Limits over temperature are guaranteed by design.)

PARAMETER CONDITIONS MIN TYP MAX UNITS

SUPPLY AND REFERENCE
VL Output Voltage 6.0V < VDCIN < 24V, no load 5.10 5.70 V
REF Output Voltage 6.0V < VDCIN < 24V 4.14 4.26 V
SWITCHING REGULATOR (Note 1)
Oscillator Frequency 260 340 kHz
DHI On-Resistance Output high or low 7 Ω
DLO On-Resistance Output high or low 14 Ω
CS to BATT Full-Scale
165 205 mV
Current-Sense Voltage
Absolute Voltage Accuracy Not including VADJ resistors -1.0 1.0 %
Note 1: When VSETI = 0V, the battery charger turns off.

_______________________________________________________________________________________ 3
 Switch-Mode Lithium-Ion
Battery Charger
__________________________________________Typical Operating Characteristics
MAX745

(TA = +25°C, VDCIN = 18V, VBATT = 4.2V, CELL0 = CELL1 = GND, CVL = 4.7µF, CREF = 0.1µF. Circuit of Figure 1, unless
otherwise noted.)
BATTERY VOLTAGE CURRENT-SENSE VOLTAGE
vs. CHARGING CURRENT vs. SETI VOLTAGE
4.5 200

MAX745/TOC-02
MAX745/TOC-01
4.0 180 R1 = 0.2Ω

CURRENT-SENSE VOLTAGE (mV)

3.5 160
BATTERY VOLTAGE (V)

140
3.0
120
2.5
100
2.0
80
1.5
60
1.0 40
R1 = 0.2Ω
0.5 R16 = SHORT 20
R12 = OPEN CIRCUIT
0 0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
CHARGING CURRENT (A) SETI VOLTAGE (V)

REFERENCE VOLTAGE VOLTAGE LIMIT

vs. TEMPERATURE vs. VADJ VOLTAGE
4.205 4.45
MAX745/TOC-06

MAX745/TOC-03
4.204 4.40
4.203
PER-CELL VOLTAGE LIMIT (V)

4.35
REFERENCE VOLTAGE (V)

4.202 4.30
4.201 4.25
4.200 4.20
4.199 4.15
4.198 4.10
4.197 4.05
4.196 4.00
4.195 3.95
0 25 50 75 100 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
TEMPERATURE (°C) VADJ VOLTAGE (V)

VL LOAD REGULATION REFERENCE LOAD REGULATION

5.50 4.25
MAX745/TOC-05
MAX745/TOC-04

5.45 4.24
5.40 4.23
REFERENCE VOLTAGE (V)
VL OUTPUT VOLTAGE (V)

5.35 4.22
5.30 4.21
5.25 4.20
5.20 4.19
5.15 4.18
5.10 4.17
5.05 4.16
0 4.15
0 5 10 15 20 25 0 500 1000 1500 2000 2500 3000
VL OUTPUT CURRENT (mA) REFERENCE CURRENT (µA)

4 _______________________________________________________________________________________
 Switch-Mode Lithium-Ion
Battery Charger
______________________________________________________________Pin Description

MAX745
PIN NAME FUNCTION
Current-Sense Amplifier’s Analog Current-Source Output. See Monitoring Charge Current section for
1 IBAT
detailed description.
2 DCIN Charger Input Voltage. Bypass DCIN with a 0.1µF capacitor.
3 VL Chip Power Supply. Output of the 5.4V linear regulator from DCIN. Bypass VL with a 4.7µF capacitor.
4 CCV Voltage-Regulation-Loop Compensation Point
5 CCI Current-Regulation-Loop Compensation Point
THM/ Thermistor Sense-Voltage Input. THM/SHDN also performs the shutdown function. If pulled low,
6
SHDN the charger turns off.
7 REF 4.2V Reference Voltage Output. Bypass REF with a 0.1µF or greater capacitor.
Voltage-Adjustment Pin. VADJ is tied to a 1% tolerance external resistor-divider to adjust the voltage set
8 VADJ
point by 10%, eliminating the need for precision 0.1% resistors. The input voltage range is 0V to VREF.
9 SETI SETI is externally tied to the resistor-divider between REF and GND to set the charging current.
10 GND Analog Ground
CELL1,
11, 12 Logic Inputs to Select Cell Count. See Table 1 for cell-count programming.
CELL0
An open-drain MOSFET sinks current when in current-regulation mode, and is high impedance when in volt-
13 STATUS age-regulation mode. Connect STATUS to VL through a 1kΩ to 100kΩ pull-up resistor. STATUS may also drive
an LED for visual indication of regulation mode (see MAX745 evaluation kit). Leave STATUS floating if not used.
14 BATT Battery-Voltage-Sense Input and Current-Sense Negative Input
15 CS Current-Sense Positive Input
16 PGND Power Ground
17 DLO Low-Side Power MOSFET Driver Output
18 DHI High-Side Power MOSFET Driver Output
19 LX Power Connection for the High-Side Power MOSFET Source
20 BST Power Input for the High-Side Power MOSFET Driver

_______________Detailed Description current-regulation limit before the voltage limit, causing

the system to regulate current. As the battery charges,
The MAX745 is a switch-mode, lithium-ion battery
the voltage rises to the point where the voltage limit is
charger that can achieve 90% efficiency. The charge
reached and the charger switches to regulating volt-
voltage and current are set independently by external
age. The STATUS pin indicates whether the charger is
resistor-dividers at SETI and VADJ, and at pin connec-
regulating current or voltage.
tions at CELL0 and CELL1. VADJ is connected to a
resistor-divider to set the charging voltage. The output Voltage Control
voltage-adjustment range is ±5%, eliminating the need To set the voltage limit on the battery, tie a resistor-
for 0.1% resistors while still achieving 0.75% set accu- divider to VADJ from REF. A 0V to V REF change at
racy using 1% resistors. VADJ sets a ±5% change in the battery limit voltage
The MAX745 consists of a current-mode, pulse-width- around 4.2V. Since the 0 to 4.2V range on VADJ results
modulated (PWM) controller and two transconductance in only a 10% change on the voltage limit, the resistor-
error amplifiers: one for regulating current (GMI) and divider’s accuracy does not need to be as high as the
the other for regulating voltage (GMV) (Figure 2). The output voltage accuracy. Using 1% resistors for the
error amplifiers are controlled via the SETI and VADJ voltage dividers typically results in no more than 0.1%
pins. Whether the MAX745 is controlling voltage or cur- degradation in output voltage accuracy. VADJ is inter-
rent at any time depends on the battery state. If the bat- nally buffered so that high-value resistors can be used
tery is discharged, the MAX745 output reaches the to set the output voltage. When the voltage at VADJ is
_______________________________________________________________________________________ 5
 Switch-Mode Lithium-Ion
Battery Charger
MAX745

VREF / 2, the voltage limit is 4.2V. Table 1 defines the where V REF = 4.2V and cell count is 1, 2, 3, or 4
battery cell count. (Table 1).
The battery limit voltage is set by the following: The voltage-regulation loop is compensated at the CCV
  1  pin. Typically, a series-resistor-capacitor combination
  VADJ − VREF   can be used to form a pole-zero doublet. The pole
 
( )
2
VBATT = cell count x  VREF + introduced rolls off the gain starting at low frequencies.
 9.523  The zero of the doublet provides sufficient AC gain at
  mid-frequencies. The output capacitor (C1) rolls off the
 
mid-frequency gain to below unity. This guarantees sta-
Solving for VADJ, we get: bility before encountering the zero introduced by the
9.523 VBATT C1’s equivalent series resistance (ESR). The GMV
VADJ = − 9.023VREF
(cell count) amplifier’s output is internally clamped to between one-
fourth and three-fourths of the voltage at REF.
Set VADJ by choosing a value for R11 (typically 100k), Current Control
and determine R3 by: The charging current is set by a combination of the cur-
R3 = [1 - (VADJ / VREF)] x R11 (Figure 1) rent-sense resistor value and the SETI pin voltage. The
current-sense amplifier measures the voltage across
the current-sense resistor, between CS and BATT. The
Table 1. Cell-Count Programming Table current-sense amplifier’s gain is 6. The voltage on SETI
is buffered and then divided by 4. This voltage is com-
CELL0 CELL1 CELL COUNT pared to the current-sense amplifier’s output.
GND GND 1 Therefore, full-scale current is accomplished by con-
VL GND 2 necting SETI to REF. The full-scale charging current
(IFS) is set by the following:
GND VL 3
VL VL 4 IFS = 185mV / R1 (Figure 1)

VIN (UP TO 24V)

C5 D2 C6
4.7µF IN4148 0.1µF
VL DCIN

REF BST
C7 M1A
R15 0.1µF 1/2 IRF7303
R16 10k
DHI L1
C4 THM/SHDN 22µH
0.1µF
LX
R3 MAX745 1/2 IRF7303
100k THM 1 M1B D1 D6
1% DLO MBRS MBRS
SETI 340T3
340T3
R12 PGND
0.2Ω
CS R1
VADJ
C2, 0.1µF R2
10k BATT
R11 CCV C1
100k BATTERY 68µF
STATUS
1% CCI
C3 GND IBAT
47nF

Figure 1. Standard Application Circuit

6 _______________________________________________________________________________________
 Switch-Mode Lithium-Ion
Battery Charger
To set currents below full scale without changing RIBAT must be chosen to limit VIBAT to voltages below

MAX745
R1, adjust the voltage at SETI according to the follow- 2V for the maximum charging current. Connect IBAT to
ing formula: GND if unused.
ICHG = IFS (VSETI / VREF) PWM Controller
A capacitor at CCI sets the current-feedback loop’s The battery voltage or current is controlled by a
dominant pole. While the current is in regulation, CCV current-mode, PWM DC/DC converter controller. This
voltage is clamped to within 80mV of the CCI voltage. controller drives two external N-channel MOSFETs,
This prevents the battery voltage from overshooting which control power from the input source. The con-
when the voltage setting is changed. The converse is troller sets the switched voltage’s pulse width so that it
true when the voltage is in regulation and the current supplies the desired voltage or current to the battery.
setting is changed. Since the linear range of CCI or Total component cost is reduced by using a dual,
CCV is about 2V (1.5V to 3.5V), the 80mV clamp results N-channel MOSFET.
in negligible overshoot when the loop switches from The heart of the PWM controller is a multi-input com-
voltage regulation to current regulation, or vice versa. parator. This comparator sums three input signals to
Monitoring Charge Current determine the switched signal’s pulse width, setting the
The battery-charging current can be externally moni- battery voltage or current. The three signals are the
tored by placing a scaling resistor (R IBAT) between current-sense amplifier’s output, the GMV or GMI error
IBAT and GND. IBAT is the output of a voltage-con- amplifier’s output, and a slope-compensation signal
trolled current source, with output current given by: that ensures that the current-control loop is stable.
IBAT = 0.9µA/VSENSE The PWM comparator compares the current-sense
amplifier’s output to the lower output voltage of either
where VSENSE is the voltage across the current-sense the GMV or GMI amplifiers (the error voltage). This cur-
resistor (in millivolts) given by: rent-mode feedback reduces the effect of the inductor
VSENSE = VCS - VBATT = ICHG x R1 on the output filter LC formed by the output inductor
The voltage across RIBAT is then given by: (L1) and C1 (Figure 1). This makes stabilizing the cir-
cuit much easier, since the output filter changes to a
0.9µA R
VIBAT = x IBAT first-order RC from a complex, second-order RLC.
ICHG R1

IBAT DCIN

BATT CURRENT 5.4V 4.2

REF
SENSE REG REF
AV = 6
CS ON
VL

STATUS
GMI
SETI 1/4

CCI BST

DHI
LX
PWM
VL
CLAMP LOGIC

DLO

PGND

GMV THM/SHDN

VADJ

CCV REF
2
CELL0 CELL
LOGIC GND
CELL1

Figure 2. Functional Diagram

_______________________________________________________________________________________ 7
 Switch-Mode Lithium-Ion
Battery Charger
MOSFET Drivers Minimum Input Voltage
MAX745

The MAX745 drives external N-channel MOSFETs to The input voltage to the charger circuit must be greater
switch the input source generating the battery voltage or than the maximum battery voltage by approximately 2V
current. Since the high-side N-channel MOSFET’s gate so the charger can regulate the voltage properly. The
must be driven to a voltage higher than the input source input voltage can have a large AC-ripple component
voltage, a charge pump is used to generate such a volt- when operating from a wall cube. The voltage at the low
age. The capacitor (C7) charges through D2 to approxi- point of the ripple waveform must still be approximately
mately 5V when the synchronous rectifier (M1B) turns on 2V greater than the maximum battery voltage.
(Figure 1). Since one side of C7 is connected to LX (the Using components as indicated in Figure 1, the minimum
source of M1A), the high-side driver (DHI) drives the gate input voltage can be determined by the following formula:
up to the voltage at BST, which is greater than the input
voltage while the high-side MOSFET is on. [VBATT + VD6 + ICHG (RDS(ON) + RL + R1)]
VIN x
The synchronous rectifier (M1B) behaves like a diode 0.89
but has a smaller voltage drop, improving efficiency. A where: VIN is the input voltage;
small dead time is added between the time when the VD6 is the voltage drop across D6
high-side MOSFET is turned off and when the synchro- (typically 0.4V to 0.5V);
nous rectifier is turned on, and vice versa. This
prevents crowbar currents during switching transitions. ICHG is the charging current;
Place a Schottky rectifier from LX to ground (D1, across RDS(ON) is the high-side
M1B’s drain and source) to prevent the synchronous MOSFET M1A’s on-resistance;
rectifier’s body diode from conducting during the dead RL is the the inductor’s series resistance;
time. The body diode typically has slower switching-
recovery times, so allowing it to conduct degrades R1 is the current-sense resistor R1’s value.
efficiency. D1 can be omitted if efficiency is not a
concern, but the resulting increased power dissipation __________________Pin Configuration
in the synchronous rectifier must be considered.
Since the BST capacitor is charged while the synchro- TOP VIEW
nous rectifier is on, the synchronous rectifier may not be
replaced by a rectifier. The BST capacitor will not fully IBAT 1 20 BST
charge without the synchronous rectifier, leaving the high- DCIN 2 19 LX
side MOSFET with insufficient gate drive to turn on.
VL 3 18 DHI
However, the synchronous rectifier can be replaced with
a small MOSFET (such as a 2N7002) to guarantee that CCV 4 17 DLO
the BST capacitor is allowed to charge. In this case, the CCI 5 MAX745 16 PGND
majority of the high charging currents are carried by D1,
THM/SHDN 6 15 CS
and not by the synchronous rectifier.
REF 7 14 BATT
Internal Regulator and Reference
VADJ 8 13 STATUS
The MAX745 uses an internal low-dropout linear regula-
tor to create a 5.4V power supply (VL), which powers its SETI 9 12 CELL0
internal circuitry. The VL regulator can supply up to GND 10 11 CELL1
25mA. Since 4mA of this current powers the internal cir-
cuitry, the remaining 21mA can be used for external cir-
SSOP
cuitry. MOSFET gate-drive current comes from VL,
which must be considered when drawing current for
other functions. To estimate the current required to drive
the MOSFETs, multiply the sum of the MOSFET gate ___________________Chip Information
charges by the switching frequency (typically 300kHz).
TRANSISTOR COUNT: 1695
Bypass VL with a 4.7µF capacitor to ensure stability.
SUBSTRATE CONNECTED TO GND
The MAX745 internal 4.2V reference voltage must be
bypassed with a 0.1µF or greater capacitor.

8 _______________________________________________________________________________________