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SEMICONDUCTOR TECHNICAL DATA by MRF377/D

The RF MOSFET Line

  
   

N–Channel Enhancement–Mode Lateral MOSFET



Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of this 


device make it ideal for large–signal, common source amplifier applications in 32
volt digital television transmitter equipment.
• Typical Broadband DVBT OFDM Performance @ 470–860 MHz, 32 Volts, 470 – 860 MHz, 240 W, 32 V
IDQ = 2.0 A, 8K Mode, 64 QAM LATERAL N–CHANNEL
Output Power — 45 Watts Avg. RF POWER MOSFET
Power Gain ≥ 16.7 dB
Efficiency ≥ 21%
ACPR ≤ –58 dBc
• Typical Broadband ATSC 8VSB Performance @ 470–860 MHz, 32 Volts,
Freescale Semiconductor, Inc...

IDQ = 2.0 A
Output Power — 80 Watts Avg.
Power Gain ≥ 16.5 dB
Efficiency ≥ 27.5%
IMD ≤ –31.3 dBc
• Internally Input and Output Matched for Ease of Use
• Integrated ESD Protection
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts DVBT CASE 375G–04, STYLE 1
OFDM Output Power NI–860C3
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.

MAXIMUM RATINGS (1)

Rating Symbol Value Unit
Drain–Source Voltage VDSS 65 Vdc
Gate–Source Voltage VGS – 0.5, +15 Vdc
Drain Current – Continuous ID 17 Adc
Total Device Dissipation @ TC = 25°C PD 486 W
Derate above 25°C 2.78 W/°C
Storage Temperature Range Tstg – 65 to +150 °C
Operating Junction Temperature TJ 200 °C

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 0.36 °C/W

ESD PROTECTION CHARACTERISTICS

Test Conditions Class
Human Body Model 1 (Minimum)
Machine Model M3 (Minimum)
Charge Device Model 7 (Minimum)

(1) Each side of device measured separately.

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

REV 0

MOTOROLA
 Motorola, RF DEVICE DATA MRF377 MRF377R3 MRF377R5
Inc. 2003 For More Information On This Product,
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 Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage V(BR)DSS 65 — — Vdc
(VGS = 0 Vdc, ID =10 µA)
Zero Gate Voltage Drain Current IDSS — — 1 µAdc
(VDS = 32 Vdc, VGS = 0 Vdc)
Gate–Source Leakage Current IGSS — — 1 µAdc
(VGS = 5 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS (1)
Gate Threshold Voltage VGS(th) — 2.8 — Vdc
(VDS = 10 Vdc, ID = 200 µA)
Gate Quiescent Voltage VGS(Q) — 3.5 — Vdc
(VDS = 32 Vdc, ID = 225 mA)
Drain–Source On–Voltage VDS(on) — 0.27 — Vdc
(VGS = 10 Vdc, ID = 3 A)
Freescale Semiconductor, Inc...

DYNAMIC CHARACTERISTICS (1)

Reverse Transfer Capacitance Crss — 3.2 — pF
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)

FUNCTIONAL CHARACTERISTICS (In DVBT OFDM Single–Channel, Narrowband Fixture, 50 ohm system)(2)
Common Source Power Gain Gps 16.5 18.2 — dB
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA,
f = 860 MHz)
Drain Efficiency η 21 22.9 — %
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA,
f = 860 MHz)
Adjacent Channel Power Ratio ACPR — –59.2 –57 dBc
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA,
f = 860 MHz)

TYPICAL CHARACTERISTICS (In DVBT OFDM Single–Channel, Broadband Fixture, 50 ohm system)(2)
Common Source Power Gain Gps dB
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA)
f = 470 MHz — 17.6 —
f = 560 MHz — 17.6 —
f = 660 MHz — 17.4 —
f = 760 MHz — 17.4 —
f = 860 MHz — 16.8 —

Drain Efficiency η %
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA)
f = 470 MHz — 23.5 —
f = 560 MHz — 25.8 —
f = 660 MHz — 23.0 —
f = 760 MHz — 22.7 —
f = 860 MHz — 21.3 —

Adjacent Channel Power Ratio ACPR dBc

(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA)
f = 470 MHz — –59.3 —
f = 560 MHz — –59.3 —
f = 660 MHz — –58.7 —
f = 760 MHz — –58.7 —
f = 860 MHz — –58.1 —

(1) Each side of device measured separately.

(2) Measured in push–pull configuration.

MRF377 MRF377R3 MRF377R5 MOTOROLA RF DEVICE DATA

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TYPICAL CHARACTERISTICS (In ATSC 8VSB Single–Channel, Broadband Fixture, 50 ohm system)(2)
Characteristic Symbol Min Typ Max Unit
Common Source Power Gain Gps dB
(VDD = 32 Vdc, Pout = 80 W Avg., IDQ = 2 x 1000 mA)
f = 470 MHz — 17.5 —
f = 560 MHz — 17.5 —
f = 660 MHz — 17.2 —
f = 760 MHz — 17.2 —
f = 860 MHz — 16.6 —

Drain Efficiency η %
(VDD = 32 Vdc, Pout = 80 W Avg., IDQ = 2 x 1000 mA)
f = 470 MHz — 31.0 —
f = 560 MHz — 34.3 —
f = 660 MHz — 30.1 —
f = 760 MHz — 29.6 —
f = 860 MHz — 27.8 —

Intermodulation Distortion IMD dBc

(VDD = 32 Vdc, Pout = 80 W Avg., IDQ = 2 x 1000 mA)
Freescale Semiconductor, Inc...

f = 470 MHz — 31.7 —

f = 560 MHz — 32.7 —
f = 660 MHz — 32.9 —
f = 760 MHz — 34.2 —
f = 860 MHz — 35.4 —
(2) Measured in push–pull configuration.

MOTOROLA RF DEVICE DATA MRF377 MRF377R3 MRF377R5

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Table 1. 845–875 MHz Narrowband Test Circuit Component Designations and Values
Part Description Value, P/N or DWG Manufacturer
B1, B2 Ferrite Beads, Surface Mount, 11 Ω (0805) 2508051107Y0 Fair–Rite
Balun 1, Balun 2 0.8–1GHz Xinger Balun 3A412 Anaran
C1 33 pF Chip Capacitor (0805) 08055J330JBT AVX / Kyocera
C2 2.7 pF Chip Capacitor (0603) 06035J2R7BBT AVX / Kyocera
C3 12 pF Chip Capacitor (0805) 08051J120GBT AVX / Kyocera
C4, C5 6.8 pF Chip Capacitors (0805) 08051J6R8BBT AVX / Kyocera
C6 2.7 pF Chip Capacitor (0805) 0805J2R7BBT AVX / Kyocera
C7, C8, C9, C10 3.3 pF Chip Capacitors (0805) 08051J3R3BBT AVX / Kyocera
C11, C12 2.2 µF, 50 V Chip Capacitors C1825C225J5RAC3810 Kemet
C13, C14, C15, C16 0.01 µF, 100 V Chip Capacitors C1825C103J1GAC Kemet
C17, C18 0.56 µF, 50 V Chip Capacitors C1825C564J5RAC Kemet
C19, C20 10 µF, 50 V Tantalum Chip Capacitors 522Z050/100MTRE Tecate
C21, C22, C23, C24 47 µF, 16 V Tantalum Chip Capacitors TPSD476K016R0150 AVX / Kyocera
C25, C26 470 µF, 63 V Electrolytic Capacitors NACZF471M63V (18x22) Nippon
Freescale Semiconductor, Inc...

L1 12 nH Inductor (0603) 0603HC–12NXJB CoilCraft

L2 7.15 nH Inductor 1606–7 CoilCraft
L3, L4 10 nH Inductor (0603) 0603HC–10NXJB CoilCraft
R1, R2 24 Ω, 1/8 W, 5% Chip Resistors (1206)
WB1, WB2, WB3, WB4 Brass Wear Shims
PCB Arlon 30 mil, εr = 2.56 DS1152 DS Electronics


 




 







 


 

 
 
 

 





 






 

 






 









 


!"  "

Figure 1. 845–875 MHz Narrowband Test Circuit Component Layout

MRF377 MRF377R3 MRF377R5 MOTOROLA RF DEVICE DATA

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TYPICAL NARROWBAND CHARACTERISTICS

 

/( /0+,)*!+/)0/+)+/)0-1 3.
6

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5 2 6 78( 5 2 6 78 5 2 6 78( 5 2 6 78
 
   
&'( )*+&*+ &), -!++. &,& &'( )*+&*+ &), -!++. &,&
Freescale Semiconductor, Inc...

Figure 2. Two–Tone Power Gain versus Figure 3. Third Order Intermodulation Distortion
Output Power versus Output Power

 
 2  13
/( /0+,)*!+/)0/+)+/)0-1 3.

 /4 2  #!

5 2 6 78( 5 2 6 78

 η(!/0,/
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:-;. η
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 2  13

/4 2  #! 
5 2 6 78( 5 2 6 78
 
   
&'( )*+&*+ &), -!++. &,& &'( )*+&*+ &), -!++. &,&
Figure 4. Intermodulation Distortion Products Figure 5. Two–Tone Drain Efficiency versus
versus Output Power Output Power

 
/( /0+,)*!+/)0/+)+/)0-1 3.

$%
 
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η(!/0,/
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:-;.

 
η
 
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5 2 6 78( 5 2 6 78
 
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&'( )*+&*+ &), -!++. &,&
Figure 6. Power Gain, Efficiency and IMD
versus Output Power

MOTOROLA RF DEVICE DATA MRF377 MRF377R3 MRF377R5

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5 2  78

A'
1
5 2  78
A%'3
5 2  78

5 2  78
Freescale Semiconductor, Inc...

A' 2  Ω

 2  ( /4 2  <  #!( &' 2   !"=6(  + )

f Zsource Zload
MHz Ω Ω

845 4.66 – j5.90 8.59 – j4.22

860 4.38 – j5.64 9.36 – j4.95

875 3.93 – j5.33 9.39 – j6.06

Zsource = Test circuit impedance as measured from

gate to gate, balanced configuration.

Zload = Test circuit impedance as measured

from drain to drain, balanced configuration.

/ $ "3 )$

39 = @ * 1  
39 =
0>'? +% 0>'?

 @
Z Z
source load

Figure 7. 845–875 MHz Narrowband Series Equivalent Input and Output Impedance

MRF377 MRF377R3 MRF377R5 MOTOROLA RF DEVICE DATA

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 Freescale Semiconductor, Inc.
Table 2. 470—860 MHz Broadband Test Circuit Component Designations and Values
Part Description Value, P/N or DWG Manufacturer
B1, B2 Ferrite Beads, Surface Mount, 30 Ω (0603) 2506033007Y0 Fair–Rite
Balun 1, Balun 2 Rogers 3.006, εr = 6.06, 1 oz Cu DS1046 DS Electronics
C1 12 pF Chip Capacitor (0603) 06035J120GBT AVX / Kyocera
C2, C5 12 pF Chip Capacitors (0805) 08051J120GBT AVX / Kyocera
C3 3.9 pF Chip Capacitor (0805) 08051J3R9BBT AVX / Kyocera
C4, C7, C12, C15, C17 8.2 pF Chip Capacitors (0805) 08051J8R2BBT AVX / Kyocera
C6 3.3 pF Chip Capacitor (0805) 08051J3R3BBT AVX / Kyocera
C8 0.4–2.5 pF Variable Capacitor 27283PC Gigatronics
C9, C10 3.3 pF Chip Capacitors (0603) 06035J3R3BBT AVX / Kyocera
C11, C14 10 pF Chip Capacitor (0805) 08051J100GBT AVX / Kyocera
C13 4.7 pF Chip Capacitor (0805) 08051J4R7BBT AVX / Kyocera
C16 2.2 pF Chip Capacitor (0603) 06035J2R2BBT AVX / Kyocera
C18 2.2 pF Chip Capacitor (0805) 08051J2R2BBT AVX / Kyocera
C19, C20, C21, C22 47 µF, 16 V Tantalum Chip Capacitors TPSD476K016R0150 AVX
Freescale Semiconductor, Inc...

C23, C26 2.2 µF, 50 V Ceramic Chip Capacitors C1825C225J5RAC3810 Kemet

C24, C25, C27, C29 0.01 µF, 100 V Ceramic Chip Capacitors C1825C103J1GAC Kemet
C28, C30 0.56 µF, 50 V Ceramic Chip Capacitors C1825C564J5GAC Kemet
C31, C32 10 µF, 50 V Chip Capacitors 522Z–050/100MTRE Tecate
C33, C34 470 µF, 63 V Electrolytic Capacitors SME63VB471M12X25LL United Chemi–Con
L1, L2 15 nH Inductors (0603) L0603150GGW003 AVX
L3, L4 12 nH Inductors (0603) 0603HC–12NHJBU CoilCraft
L5, L6 8 nH Coil Inductors A03T–5 CoilCraft
L7 22 nH Coil Inductor B07T–5 CoilCraft
L8 18.5 nH Coil Inductor A05T–5 CoilCraft
R1, R2 12.1 Ω, 1/16 W, 1% Chip Resistors (0603)
PCB Gate, PCB Drain PCB Motherboard w/Integrated Daughterboard, DS1047 DS Electronics
Rogers 3003, εr = 3.03, 0.5 oz Cu

MOTOROLA RF DEVICE DATA MRF377 MRF377R3 MRF377R5

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 Freescale Semiconductor, Inc.




 




 


 















 

















Freescale Semiconductor, Inc...

 

 




 
 



 


" "

Multilayer Balun Mounting Detail

+'$%1 >

*$%1 '> >

Figure 8. 470–860 MHz Broadband Test Circuit Component Layout

MRF377 MRF377R3 MRF377R5 MOTOROLA RF DEVICE DATA

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TYPICAL DVBT OFDM BROADBAND CHARACTERISTICS

 

!
&(!B!
,0+
7!00,&),!+/)
 
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η(!/0,/
/,0
:-;.
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  2  13( &' 2   -!"=6.( /4 2  #! 
C '1  + )
 
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'
  D#E'% 
 
 
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&
 
        
5( ,4*,0
: -78.
Freescale Semiconductor, Inc...

Figure 9. Single–Channel DVBT OFDM

Broadband Performance

 
 2  13( /4 2  #!  2  13  78
 78
C '1 ) /4 2  #!
6   78
 78  4! 



 '1
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η(!/0,/
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:-;.
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'
   D#E'%
 78
 78  78
6 
 78  78
 78
 

6 

 
        
&'( )*+&*+ &), -!++. !6 &'( )*+&*+ &), -!++. !6
Figure 10. Single–Channel DVBT OFDM Broadband Figure 11. Single–Channel DVBT OFDM
Performance Power Gain versus Output Power Broadband Performance Drain Efficiency versus
Output Power
!
&(!B!
,0+
7!00,&),!+/)-1 3.



6 78
 
 78

  78

 78
 78 

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C '1  + )  78 
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&'( )*+&*+ &), -!++. !6 5( ,4*,0
: -78.
Figure 12. Single–Channel DVBT OFDM Broadband Performance Figure 13. 8K Mode DVBT OFDM Spectrum
Adjacent Channel Power Ratio versus Output Power

MOTOROLA RF DEVICE DATA MRF377 MRF377R3 MRF377R5

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TYPICAL ATSC 8VSB BROADBAND CHARACTERISTICS

 

!
&(!B!
,0+
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Freescale Semiconductor, Inc...

Figure 14. Single–Channel ATSC 8VSB

Broadband Performance

 
 2  13  2  13  78
/4 2  #!  /4 2  #!
6  78
 78 !+
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η(!/0,/
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Figure 15. Single–Channel ATSC 8VSB Broadband Figure 16. Single–Channel ATSC 8VSB Broadband
Performance Power Gain versus Output Power Performance Drain Efficiency versus Output Power
!
&(!B!
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: -78.
Figure 17. Single–Channel ATSC 8VSB Broadband Performance Figure 18. ATSC 8VSB Spectrum
Adjacent Channel Power Ratio versus Output Power

MRF377 MRF377R3 MRF377R5 MOTOROLA RF DEVICE DATA

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5 2  78
5 2  78

A'
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5 2  78
A' 2  Ω
A' 2  Ω
5 2  78
Freescale Semiconductor, Inc...

)$#81 5'  2  ( /4 2  <  #!( &' 2   !"=6(  + )

f Zsource Zload
MHz Ω Ω

470 5.79 – j2.40 6.21 – j1.69

560 6.63 – j2.63 5.66 – j1.12

660 6.57 – j4.03 6.76 – j1.00

760 6.67 – j4.55 6.57 – j1.91

860 5.34 – j6.28 7.37 – j5.45

Zsource = Test circuit impedance as measured from

gate to gate, balanced configuration.

Zload = Test circuit impedance as measured

from drain to drain, balanced configuration.

/ $ "3 )$

39 = @ * 1  
39 =
0>'? +% 0>'?

 @
Z Z
source load

Figure 19. 470—860 MHz Broadband Series Equivalent Input and Output Impedance

MOTOROLA RF DEVICE DATA MRF377 MRF377R3 MRF377R5

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PACKAGE DIMENSIONS

G 4
2X Q
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333  + !  
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Freescale Semiconductor, Inc...

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CASE 375G–04
ISSUE E
NI–860C3

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MRF377 MRF377R3 MRF377R5 MOTOROLA RF DEVICE DATA

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