Problems

Problem 1: Fabrication
Find a way to add a step to Scheme 2 to produce an outward facing tip using the same steps. The
modification would produce a convenient tip orientation with sharpness determined by the etch
pits.

Hint:

One may use ductile metal as the cantilever and bend the beam backward, 180o, after the
fabrication. The bending can be achieved manually.

Problem 2: Design
Find the dimensions of a straight cantilever with a force constant of 0.5 N/m and a resonant
frequency of 100 KHz out of single crystal silicon (t=5 µm), and gold thin film (t=0.5 µm).
Assume the silicon has a Young’s modulus of 160 GPa.

Hint:

The force constant is

3EI Ewt 3
k= 3 =
l 4l 3

The resonant frequency is

3.52 EIg Ewt 3 g Et 2
fn = = 0.56 = 0.56
2π wl 4 ρlwtg 4 12 ρl 4
12( )l
l
Therefore
2 Et 2
f n = 0.3139
12 ρl 4
One can find length from the resonant frequency. Plugging the length into the expression of k,
the width can be found.

For the single crystal silicon beam, the length is 259 µm. The width is 1.737 µm.

For gold, we assume the Young’s modulus is 78 GPa (according to appendix A). The length is
40.3 µm. The width is 13.4 µm.
Problem 3: Fabrication
Develop a process for realizing an SPM probe with a gold tip and a polysilicon cantilever using
the mold and transfer process. Draw the cross-section of the process in detail. Describe the

Instructor's Solutions Manual to Accompany Foundations of MEMS by Chang Liu, ISBN 0-13-147483-9.
© 2006 Pearson Education, Inc., Upper33Saddle River, NJ. All rights reserved.
This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced,
in any form or by any means, without permission in writing from the publisher.
 process of each step, and clearly identify all layers involved. The shape of the tip should be
similar to a pyramid with a height of 5 µm or more. Tip sharpness is a primary design objective.

Hint:

There are two approaches. In the first, one can selectively coat the tip with gold. However, the
tip radius will deteriorate. One can use the mold and transfer method to create sharp tips made
of gold

Problem 4: Fabrication
Develop a fabrication process for realizing an SPM probe with a thin film diamond tip and a
polyimide cantilever. Draw the cross-section of the process in detail. Investigate a method for
depositing diamond thin film on silicon wafers. Summarize the process conditions, film quality
(smoothness).

Hint:

The mold-and-transfer method is ideal for this device, though other options may be possible.

Ask the students to review literature or on-line sources to identify a method for depositing the
carbon thin film in diamond lattice form.
Problem 5: Fabrication
Develop a fabrication process based on the mold-and-transfer methodology for realizing an array
of SPM probes with two types of SPM probes on the same substrate. One probe consists of a
LPCVD silicon nitride tip and cantilever. A second probe consists of a conductive platinum tip
and a silicon nitride cantilever. The two cantilevers have the same length. The thickness of the
two types of probes is identical.

Hint:

Identify the process conditions for depositing LPCVD silicon nitride and Platinum. Identify a
suitable material for the cantilever.
Problem 6: Fabrication
Review scheme #7 according to Figure 10 and determine the etchant and materials of each layer.
Refer to [39], summarize the etching selectivity by the etchant on various exposed materials in
each step (7.2 through 7.8). Build a spread sheet.

Problem 7: Fabrication
According to Case 1, develop a process using the mould-and-transfer strategies for realizing a
SPM probe with a silicon nitride tip. The cantilever should consist of a bimetallic actuator with
gold and silicon nitride similar to the principle discussed in Case 6. Namely, the gold layer may
consist of resistive heaters. The process should allow gold resistors to be connected with voltage
or current supplies.

Instructor's Solutions Manual to Accompany Foundations of MEMS by Chang Liu, ISBN 0-13-147483-9.
© 2006 Pearson Education, Inc., Upper34Saddle River, NJ. All rights reserved.
This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced,
in any form or by any means, without permission in writing from the publisher.
 Problem 8: Design
For a comparison of diffusion between Case 2 and Case 3, find out the ratio of diffusivity of
boron in single crystal silicon at 1000oC and 800oC. Assuming the ion implantation results in
identical surface concentration and the surface concentration is constant, find the ratio of the
dopant concentration at a depth of 0.5 µm and time of 10 min between these two cases.

Answer:

The diffusion governing equation and governing equation can be found in many semiconductor
text books, such as “VLSI Technology” by S.M. Sze (McGraw-Hill). The diffusivity for boron
in silicon at 1000oC (1273K) and 800oC (1073K) are roughly 1 × 10 −14 cm 2 / s and
3.5 × 10 −17 cm 2 / s , respectively.

x
Assume the doping concentration follows an ERF function, C ( x, t ) = C surface erf ( ) . The
2 Dt
ratio of doping concentration is roughly 0.8852 / 0.0147 ≈ 60 .
Problem 9: Design
For Case 2, derive the equation that was used in the reference paper (Equation 1 in Ref. [48]) for
calculating the spring constant.

Problem 10: Design

Find the correct expression for estimating the resonant frequency of the structure in Case 2.
Based on known geometry given in [48], find whether the experimentally measured resonant
frequency agrees with the analysis. Discuss sources of any discrepancies.

Hint:

This is a very practical problem and the exercise is very often encountered in MEMS research.
A student should be able to identify the fact that experimental results and simple analytical
analysis in real life may not agree to each other.
Problem 11: Design
For Case 2, discuss sources of cross-sensitivity of the cantilever to temperature (%/oC) and
compare the magnitude of temperature sensitivity to the force sensitivity.

Hint:

This is a practical exercise used often in MEMS research and product development. A student
should find the dimensions and then appropriate numbers for the material properties. The key
for grading this problem is not necessarily to look for the right answer but for the right thought
process and procedure.

Instructor's Solutions Manual to Accompany Foundations of MEMS by Chang Liu, ISBN 0-13-147483-9.
© 2006 Pearson Education, Inc., Upper35Saddle River, NJ. All rights reserved.
This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced,
in any form or by any means, without permission in writing from the publisher.
 Problem 12: Fabrication
In Case 4, a SPM probe with 100-nm beam thickness is realized. However, SOI wafers are
rather expensive. Discuss an alternative process to realize a 100-nm beam made of a different
material, such as silicon nitride. Find the suitable displacement transduction material based on
piezoresistivity principle. Draw a fabrication process in detail. The overall thickness of the
cantilever, together with displacement transduction material, should not exceed 150 nm. Discuss
major performance aspects, including sensitivity, compared to the silicon beam shown in Case 4.
Discuss trade-offs of wafer cost, processing complexity, and performance in this case.

Problem 13: Review

Based on reference [47] in Case 5, find an expression of the tip displacement as a function of
applied voltage. Compare the analysis result with experimental data in the paper. State your
assumptions.

Hint:

The relatively complex geometries make it difficult to estimate the value exactly. However, the
purpose of this problem is to identify an analytical model and verify the accuracy against
experimentally measured data.

Problem 14: Design

Derive an analytical expression for the tip displacement of the thermal bimetallic active DPN
probe discussed in Case 6, using dimensional information outlined in [56]. Compare the results
to experimental data and identify sources of discrepancy. State your assumptions clearly.

Problem 15: Challenge

Develop a design and companion fabrication process of a SPM probe with thermal bimetallic
actuation and an integrated displacement-sensing element. The dimensions of the probe should
be identical to those in [56]. Discuss coupling issues between the sensing and actuation
functions.

Instructor's Solutions Manual to Accompany Foundations of MEMS by Chang Liu, ISBN 0-13-147483-9.
© 2006 Pearson Education, Inc., Upper36Saddle River, NJ. All rights reserved.
This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced,
in any form or by any means, without permission in writing from the publisher.