MOS Based Capacitor
MOS Based Capacitor
MOS Based Capacitor
Project Title
MOS based capacitor
The working circuit of the MOS based capacitor was designed using following components:
1. NMOS (GPDK 45nm)
2. Resistor (1MOhm)
3. Vpwl
4. GND
2. Capacitance Calculation
For calculation the capacitance of MOS capacitor is calculated by integrating the output
(NMO/G) of Transient analysis from 10psec to 10nsec. The resultant capacitance value is
1.82052f (1.82 X 10^(-15) F) for the channel length of 1um and voltage(Vpwl=> w) of 1V. As
shown below.
3. Parametric Analysis :-
For parametric analysis the capacitor's channel length (c) is varied from 1um to 10um
linearly with the step size of 1um. On this basis a transient plot was obtained with 10
outputs, according to which the capacitance value curve was plotted for the variation of
channel length.
4. C - V Characteristics:-
Parametric analysis was performed to obtain C-V characteristics by varying Vpwl (w) from
-2V to 2V linearly with 100 steps. On this basis a transient plot was obtained with 100 i/o
pair, according to which the C-V curve was plotted. It can be observed from the plotted curve
that it consists of three regions: inversion, depletion, and accumulation. The plot was
consistent with the C-V characteristics proving that the designed circuit was working as a
capacitor.
F. References
● https://www.electrical4u.com/mos-capacitor-mos-capacitance-c-v-curve/ article
● https://www.youtube.com/watch?v=b25zLBGQTgA video
● https://www.chu.berkeley.edu/wp-content/uploads/2020/01/Chenming-Hu_ch5-1.pdf book
● Lee, Hye-Ryoung & Choi, Samjong & Cho, Kyoungah & Kim, Sangsig. (2007).
Capacitance–voltage characteristics of MOS capacitors with Ge nanocrystals embedded in
ZrO2 gate material. Thin Solid Films. 516. 412-416. 10.1016/j.tsf.2007.07.008.