MOS Based Capacitor

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A.

Project Title
MOS based capacitor

B. Group Name and Group Members (with Roll Nos)

C. Objective of the Project


Design and characterize the MOS based capacitor.

D. Working Circuit/ Proposed Design:

The working circuit of the MOS based capacitor was designed using following components:
1. NMOS (GPDK 45nm)
2. Resistor (1MOhm)
3. Vpwl
4. GND

E. Results and Demonstration (in brief):


1. Transient Analysis:
A Vpwl input of 1 V remains constant till 10psec, it linearly increases till 1.1 V in span of 1
psec & remains constant till 10nsec.
Initially the MOS capacitor gives an output of 1V, then as the input voltage increases the
capacitor charges till 11psec. And then as the input voltage remains constant the capacitor
losses it charge exponentially.

2. Capacitance Calculation
For calculation the capacitance of MOS capacitor is calculated by integrating the output
(NMO/G) of Transient analysis from 10psec to 10nsec. The resultant capacitance value is
1.82052f (1.82 X 10^(-15) F) for the channel length of 1um and voltage(Vpwl=> w) of 1V. As
shown below.

3. Parametric Analysis :-
For parametric analysis the capacitor's channel length (c) is varied from 1um to 10um
linearly with the step size of 1um. On this basis a transient plot was obtained with 10
outputs, according to which the capacitance value curve was plotted for the variation of
channel length.

4. C - V Characteristics:-
Parametric analysis was performed to obtain C-V characteristics by varying Vpwl (w) from
-2V to 2V linearly with 100 steps. On this basis a transient plot was obtained with 100 i/o
pair, according to which the C-V curve was plotted. It can be observed from the plotted curve
that it consists of three regions: inversion, depletion, and accumulation. The plot was
consistent with the C-V characteristics proving that the designed circuit was working as a
capacitor.

F. References
● https://www.electrical4u.com/mos-capacitor-mos-capacitance-c-v-curve/ article
● https://www.youtube.com/watch?v=b25zLBGQTgA video
● https://www.chu.berkeley.edu/wp-content/uploads/2020/01/Chenming-Hu_ch5-1.pdf book
● Lee, Hye-Ryoung & Choi, Samjong & Cho, Kyoungah & Kim, Sangsig. (2007).
Capacitance–voltage characteristics of MOS capacitors with Ge nanocrystals embedded in
ZrO2 gate material. Thin Solid Films. 516. 412-416. 10.1016/j.tsf.2007.07.008.

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