256-Bit Serial Nonvolatile CMOS Static RAM: CAT24C44
256-Bit Serial Nonvolatile CMOS Static RAM: CAT24C44
256-Bit Serial Nonvolatile CMOS Static RAM: CAT24C44
FEATURES
■ Single 5V Supply ■ JEDEC Standard Pinouts:
■ Infinite EEPROM to RAM Recall –8-lead DIP
–8-lead SOIC
■ CMOS and TTL Compatible I/O
■ 100,000 Program/Erase Cycles (EEPROM)
■ Low CMOS Power Consumption:
–Active: 3mA Max. ■ Auto Recall on Power-up
–Standby: 30µA Max. ■ Commercial, Industrial and Automotive
■ Power Up/Down Protection Temperature Ranges
DESCRIPTION
The CAT24C44 Serial NVRAM is a 256-bit nonvolatile store protection circuitry prohibits STORE operations
memory organized as 16 words x 16 bits. The high when VCC is less than 3.5V (typical) ensuring EEPROM
speed Static RAM array is bit for bit backed up by a data integrity.
nonvolatile EEPROM array which allows for easy trans-
The CAT24C44 is manufactured using Catalyst’s ad-
fer of data from RAM array to EEPROM (STORE) and
vanced CMOS floating gate technology. It is designed to
from EEPROM to RAM (RECALL). STORE operations
endure 100,000 program/erase cycles (EEPROM) and
are completed in 10ms max. and RECALL operations
has a data retention of 10 years. The device is available
typically within 1.5µs. The CAT24C44 features unlim-
in JEDEC approved 8-lead plastic DIP and SOIC
ited RAM write operations either through external RAM
packages.
writes or internal recalls from EEPROM. Internal false
BLOCK DIAGRAM
EEPROM ARRAY
RECALL
ROW STATIC RAM
STORE
DECODE ARRAY STORE
256-BIT CONTROL
LOGIC RECALL
CE
INSTRUCTION COLUMN
DI DO
REGISTER DECODE
SK VCC
VSS
INSTRUCTION 4-BIT
DECODE COUNTER
MODE SELECTION(1)(2)
Software Write Enable Previous Recall
Mode STORE RECALL Instruction Latch Latch
Hardware Recall(3) 1 0 NOP X X
Software Recall 1 1 RCL X X
Hardware Store(3) 0 1 NOP SET TRUE
Software Store 1 1 STO SET TRUE
X = Don’t Care
POWER-UP TIMING(4)
Symbol Parameter Min. Max. Units
VCCSR VCC Slew Rate 0.5 0.005 V/m
tpur Power-Up to Read Operations 200 µs
tpuw Power-Up to Write or Store Operation 5 ms
Note:
(1) The store operation has priority over all the other operations.
(2) The store operation is inhibited when VCC is below ≈ 3.5V.
(3) NOP designates that the device is not currently executing an instruction.
(4) This parameter is tested initially and after a design or process change that affects the parameter.
RELIABILITY CHARACTERISTICS
Symbol Parameter Min. Typ. Max. Units
NEND(1) Endurance 100,000 Cycles/Byte
TDR(1) Data Retention 10 Years
VZAP(1) ESD Susceptibility 2000 Volts
ILTH(1)(4) Latch-up 100 mA
A.C. CHARACTERISTICS
VCC = 5V ±10%, unless otherwise specified.
Symbol Parameter Min. Max. Units Conditions
FSK SK Frequency DC 1 MHz
tSKH SK Positive Pulse Width 400 ns
tSKL SK Negative Pulse Width 400 ns CL = 100pF + 1TTL gate
tDS Data Setup Time 400 ns VOH = 2.2V, VOL = 0.65V
tDH Data Hold Time 80 ns VIH = 2.2V, VIL = 0.65V
tPD SK Data Valid Time 375 ns Input rise and fall times = 10ns
tZ CE Disable Time 1 µs
tCES CE Enable Setup Time 800 ns
tCEH CE Enable Hold Time 400 ns
tCDS CE De-Select Time 800 ns
A.C. CHARACTERISTICS, Store Cycle
VCC = 5V ±10%, unless otherwise specified.
Limits
Symbol Parameter Min. Max. Units Conditions
tST Store Time 10 ms CL = 100pF + 1TTL gate
tSTP Store Pulse Width 200 ns VOH = 2.2V, VOL = 0.65V
tSTZ Store Disable Time 100 ns VIH = 2.2V, VIL = 0.65V
INSTRUCTION SET
Format
Instruction Start Bit Address OP Code Operation
WRDS 1 XXXX 000 Reset Write Enable Latch (Disables, Writes and Stores)
STO 1 XXXX 001 Store RAM Data in EEPROM
WRITE 1 AAAA 011 Write Data into RAM Address AAAA
WREN 1 XXXX 100 Set Write Enable Latch (Enables, Writes and Stores)
RCL 1 XXXX 101 Recall EEPROM Data into RAM
READ 1 AAAA 11X Read Data From RAM Address AAAA
X = Don’t care
A = Address bit
1 2 3 4 5 6 7 8 9 10 11 12 22 23 24
SK
(1)
(8)
DI 1 A A A AX 1 1
HIGH-Z
DO D0 D1 D2 D3 D14 D15 D0
1 2 3 4 5 6 7 8 9 10 11 12 22 23 24
SK
Note:
(1) Bit 8 of READ instruction is “Don’t Care”.
SK
VIH
CE
tPD
DI
tPD tZ
HIGH-Z HIGH-Z
DO D0 D1 Dn
SK x 1 2 n
CE
tDS tDH
DI
RECALL
RCL/RECALL
inadvertent store operations, the following conditions
Data is transferred from the EEPROM data memory to must each be met before data can be transferred into
RAM by either sending the RCL instruction or by pulling nonvolatile storage:
the RECALL input pin low. A recall operation must be
performed before the EEPROM store, or RAM write • The “previous recall” latch must be set (either a
operations can be executed. Either a hardware or soft- software or hardware recall operation).
ware recall operation will set the “previous recall” latch
• The “write enable” latch must be set (WREN
internal to the CAT24C44.
instruction issued).
POWER-ON RECALL • STO instruction issued or STORE input low.
The CAT24C44 has a power-on recall function that During the store operation, all other CAT24C44 func-
transfers the EEPROM data to the RAM. After Power- tions are inhibited. Upon completion of the store opera-
up, all functions are inhibited for at least 200ns (Tpur) tion, the “write enable” latch is reset. The device also
from stable Vcc. provides false store protection whenever VCC falls below
a 3.5V level. If VCC falls below this level, the store
STORE
STO/STORE operation is disabled and the “write enable” latch is
Data in the RAM memory area is stored in the EEPROM reset.
memory either by sending the STO instruction or by
pulling the STORE input pin low. As security against any
RECALL
tRCZ tARC
HIGH-Z
DO VALID DATA
tST
tSTP
STORE
tSTZ
HIGH-Z
DO
CE
1 2 3 4 5 6 7 8
SK
DI 1 X X X X
OP-CODE
ORDERING INFORMATION
CAT 24C44 V I – G T3
Notes:
(1) All packages are RoHS-compliant (Lead-free, Halogen-free).
(2) The device used in the above example is a CAT24C44VI-GT3 (SOIC, Industrial Temperature, NiPdAu, Tape & Reel, 3,000/Reel).
(3) For additional package option please contact your nearest ON Semiconductor Sales office.
(4) Extended Temperature available upon request.
REVISION HISTORY
Date Revision Description
17-Apr-04 O Add Lead Free Logo
Update Features
Update Pin Configuration
Update Block Diagram
Update Instruction Set
Update Device Operation
Update Ordering Information
Add Revision History
Update Rev Number
16-Nov-04 P Update Pin Configuration
Update Ordering Information
17-Apr-04 Q Update Ordering Information
03-Aug-05 R Update Pin Configuration
Update Reliability Characteristics
Update Ordering Information
24-Jun-08 S Update Pin Configuration
Update Example of Ordering Information
04-Dec-08 T Change logo and fine print to ON Semiconductor
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