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Vlsi2 D and E Type MOSfets

There are two types of MOSFETs: depletion mode and enhancement mode. Depletion mode MOSFETs can operate in depletion or enhancement mode, while enhancement mode MOSFETs only operate in enhancement mode above a threshold voltage. Both have a gate, source, and drain with a thin silicon dioxide insulating layer between the gate and a doped substrate. They differ in whether the channel between source and drain is on or off without a gate voltage.

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Gaurav Mehra
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135 views17 pages

Vlsi2 D and E Type MOSfets

There are two types of MOSFETs: depletion mode and enhancement mode. Depletion mode MOSFETs can operate in depletion or enhancement mode, while enhancement mode MOSFETs only operate in enhancement mode above a threshold voltage. Both have a gate, source, and drain with a thin silicon dioxide insulating layer between the gate and a doped substrate. They differ in whether the channel between source and drain is on or off without a gate voltage.

Uploaded by

Gaurav Mehra
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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MOSFET’S

[ METAL-OXIDE SEMICONDUCTOR FIELD


EFFECT TRANSISTOR ]
MOSFET’S

 There are 2 types of MOSFET’s:

• Depletion mode MOSFET (D-MOSFET)


• N-channel D-Type MOSFET
• P-channel D-Type MOSFET
• Enhancement Mode MOSFET (E-MOSFET)
DEPLETION MODE MOSFET CONSTRUCTION

• The Drain (D) and Source (S) leads connect to the to n-doped regions
• These N-doped regions are connected by an n-channel
• This n-channel is connected to the Gate (G) via a thin insulating layer of
SiO2
• The n-doped material lies on a p-doped substrate that may have an
additional terminal connection called SS
BASIC OPERATION

D-MOSFET may be biased to operate in two modes:


• The Depletion mode or The Enhancement mode
D-MOSFET DEPLETION MODE OPERATION

The transfer characteristics are similar to the JFET


In Depletion Mode operation:
When VGS = 0V, ID = IDSS
When VGS < 0V, ID < IDSS
When VGS > 0V, ID > IDSS  VGS 
2

The formula used to plot the Transfer Curve, is: ID = IDSS  1 - 


 VP 
D-MOSFET ENHANCEMENT MODE OPERATION

Enhancement Mode operation


In this mode, the transistor operates with VGS > 0V, and ID increases above IDSS
Shockley’s equation, the formula used to plot the Transfer Curve, still applies but
VGS is positive:
2
 VGS 
ID = IDSS  1 - 
 VP 
p-Channel Depletion Mode MOSFET

The p-channel Depletion mode MOSFET is similar to the n-channel except that
the voltage polarities and current directions are reversed
D-MOSFET Symbols
Specification Sheet

January 2004
9
ELE
C
121
ENHANCEMENT MODE
MOSFET’S
n-Channel E-MOSFET showing channel length L and channel
width W
Enhancement Mode MOSFET Construction

The Drain (D) and Source (S) connect to the to n-doped regions
These n-doped regions are not connected via an n-channel without an external
voltage
The Gate (G) connects to the p-doped substrate via a thin insulating layer of SiO2
The n-doped material lies on a p-doped substrate that may have an additional
terminal connection called SS
Basic Operation
The Enhancement mode MOSFET only operates in the enhancement mode.

VGS is always positive


IDSS = 0 when VGS < VT
As VGS increases above VT, ID increases
If VGS is kept constant and VDS is increased, then ID saturates (IDSS)
The saturation level, VDSsat is reached.
p-Channel Enhancement Mode MOSFETs
The p-channel Enhancement mode MOSFET is similar to the n-channel except
that the voltage polarities and current directions are reversed.
E-MOSFET Symbols
Specification Sheet
SOME PACKAGES OF MOSFET

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