DISCRETE SEMICONDUCTORS

DATA SHEET
dbook, halfpage

M3D049

BAS316
High-speed diode
Product specification 1998 Mar 26
Supersedes data of 1998 Jan 08
Philips Semiconductors Product specification

High-speed diode BAS316

FEATURES DESCRIPTION
• Very small plastic SMD package The BAS316 is a high-speed switching diode fabricated in planar technology,
• High switching speed: max. 4 ns and encapsulated in the SOD323 SMD plastic package.
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
handbook, halfpage
max. 85 V k a

• Repetitive peak forward current:

max. 500 mA. MAM157

APPLICATIONS Marking code: A6.

Cathode side indicated by a bar.
• High-speed switching in e.g.
surface mounted circuits.
Fig.1 Simplified outline (SOD323) and symbol.

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage − 85 V
VR continuous reverse voltage − 75 V
IF continuous forward current Ts = 90 °C; note 1; see Fig.2 − 250 mA
IFRM repetitive peak forward current − 500 mA
IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs − 4 A
t = 1 ms − 1 A
t=1s − 0.5 A
Ptot total power dissipation Ts = 90 °C; note 1 − 400 mW
Tstg storage temperature −65 +150 °C
Tj junction temperature − 150 °C

Note
1. Ts is the temperature at the soldering point of the cathode tab.

1998 Mar 26 2
Philips Semiconductors Product specification

High-speed diode BAS316

ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MAX. UNIT

VF forward voltage see Fig.3
IF = 1 mA 715 mV
IF = 10 mA 855 mV
IF = 50 mA 1 V
IF = 150 mA 1.25 V
IR reverse current see Fig.5
VR = 25 V 30 nA
VR = 75 V 1 µA
VR = 25 V; Tj = 150 °C 30 µA
VR = 75 V; Tj = 150 °C; 50 µA
Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 1.5 pF
trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; 4 ns
RL = 100 Ω; measured at IR = 1 mA; see Fig.7
Vfr forward recovery voltage when switched from IF = 10 mA; tr = 20 ns; see Fig.8 1.75 V

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-s thermal resistance from junction to soldering point note 1 150 K/W
Note
1. Soldering point of the cathode tab.

1998 Mar 26 3
Philips Semiconductors Product specification

High-speed diode BAS316

GRAPHICAL DATA

MGM762 MBG382
500 300
handbook, halfpage handbook, halfpage
IF
(mA) IF
400 (mA)
(1) (2) (3)
200
300

200
100

100

0 0
0 50 100 150 200 0 1 VF (V) 2
Ts (oC)

(1) Tj = 150 °C; typical values.

(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.2 Maximum permissible continuous
forward current as a function of Fig.3 Forward current as a function of
soldering point temperature. forward voltage.

MBG704
102
handbook, full pagewidth

IFSM
(A)

10

10−1
1 10 102 103 tp (µs) 104

Based on square wave currents.

Tj = 25 °C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

1998 Mar 26 4
Philips Semiconductors Product specification

High-speed diode BAS316

MGA884 MBG446
105 0.8
handbook, halfpage
IR Cd
(nA) (pF)
V R = 75 V
4
10 0.6

max 75 V
103 0.4

2
25 V
10 0.2

typ
typ
10 0
0 100 200 0 4 8 12 16
T j ( o C) VR (V)

f = 1 MHz; Tj = 25 °C.

Fig.5 Reverse current as a function of Fig.6 Diode capacitance as a function of

junction temperature. reverse voltage; typical values.

1998 Mar 26 5
Philips Semiconductors Product specification

High-speed diode BAS316

handbook, full pagewidth

tr tp
t
D.U.T. 10%
RS = 50 Ω IF IF t rr
SAMPLING t
OSCILLOSCOPE
V = VR I F x R S R i = 50 Ω

90% (1)
VR
MGA881

input signal output signal

(1) IR = 1 mA.
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05;
Oscilloscope: rise time tr = 0.35 ns.

Fig.7 Reverse recovery voltage test circuit and waveforms.

I 1 kΩ 450 Ω
I V
90%

R = 50 Ω
S OSCILLOSCOPE V fr
D.U.T.
R i = 50 Ω

10%
MGA882 t t
tr tp

input output
signal signal

Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty factor δ ≤ 0.005.

Fig.8 Forward recovery voltage test circuit and waveforms.

1998 Mar 26 6
Philips Semiconductors Product specification

High-speed diode BAS316

PACKAGE OUTLINE

Plastic surface mounted package; 2 leads SOD323

,
Q

A
A1

c
Lp

HE v M A

D A

1 2

E bp

(1)

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A1
UNIT A bp c D E HE Lp Q v
max.
1.1 + 0.05 0.40 0.25 1.8 1.35 2.7 0.45 0.25
mm 0.2
0.8 − 0.05 0.25 0.10 1.6 1.15 2.3 0.15 0.15

Note
1. The marking bar indicates the cathode.

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

SOD323 98-09-14

1998 Mar 26 7
Philips Semiconductors Product specification

High-speed diode BAS316

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1998 Mar 26 8
Philips Semiconductors Product specification

High-speed diode BAS316

NOTES

1998 Mar 26 9
Philips Semiconductors Product specification

High-speed diode BAS316

NOTES

1998 Mar 26 10
Philips Semiconductors Product specification

High-speed diode BAS316

NOTES

1998 Mar 26 11
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© Philips Electronics N.V. 1997 SCA56

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Printed in The Netherlands 115104/00/03/pp12 Date of release: 1998 Mar 26 Document order number: 9397 750 03406