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    Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

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    ErnandesTorresBarbosa
    The 2SC2331 is a silicon NPN power transistor from SavantIC Semiconductor with a TO-220 package. It has a low collector saturation voltage and fast switching speed, making it suitable for switching regulators, DC-DC converters, and high frequency power amplifiers. The document provides maximum ratings, characteristics including voltage and current parameters, and switching times for the transistor. It also includes a diagram of the package outline and pin configuration.

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    Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

    Uploaded by

    ErnandesTorresBarbosa
    26 views3 pages
    The 2SC2331 is a silicon NPN power transistor from SavantIC Semiconductor with a TO-220 package. It has a low collector saturation voltage and fast switching speed, making it suitable for switching regulators, DC-DC converters, and high frequency power amplifiers. The document provides maximum ratings, characteristics including voltage and current parameters, and switching times for the transistor. It also includes a diagram of the package outline and pin configuration.

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    Datasheet

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    2SC2331

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    The 2SC2331 is a silicon NPN power transistor from SavantIC Semiconductor with a TO-220 package. It has a low collector saturation voltage and fast switching speed, making it suitable for switching regulators, DC-DC converters, and high frequency power amplifiers. The document provides maximum ratings, characteristics including voltage and current parameters, and switching times for the transistor. It also includes a diagram of the package outline and pin configuration.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    26 views3 pages

    Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

    Uploaded by

    ErnandesTorresBarbosa
    The 2SC2331 is a silicon NPN power transistor from SavantIC Semiconductor with a TO-220 package. It has a low collector saturation voltage and fast switching speed, making it suitable for switching regulators, DC-DC converters, and high frequency power amplifiers. The document provides maximum ratings, characteristics including voltage and current parameters, and switching times for the transistor. It also includes a diagram of the package outline and pin configuration.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors 2SC2331

    DESCRIPTION
    ·With TO-220 package
    ·Complement to type 2SA1008
    ·Low collector saturation voltage
    ·Fast switching speed

    APPLICATIONS
    ·Switching regulators
    ·DC-DC converters
    ·High frequency power amplifiers

    PINNING

    PIN DESCRIPTION

    1 Base

    Collector;connected to
    2
    mounting base
    Fig.1 simplified outline (TO-220) and symbol
    3 Emitter

    Absolute maximum ratings(Ta=25 )


    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    VCBO Collector-base voltage Open emitter 100 V

    VCEO Collector-emitter voltage Open base 100 V

    VEBO Emitter-base voltage Open collector 7 V

    IC Collector current 2.0 A

    ICM Collector current-Peak 4.0 A

    IB Base current 1.0 A

    Ta=25 1.5
    PT Total power dissipation W
    TC=25 15

    Tj Junction temperature 150

    Tstg Storage temperature -55~150


    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors 2SC2331

    CHARACTERISTICS
    Tj=25 unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    VCEO(SUS) Collector-emitter sustaining voltage IC=1.0A ,IB=0.1A,L=1mH 100 V

    VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A 0.6 V

    VBEsat Base-emitter saturation voltage IC=1A ;IB=0.1A 1.5 V

    ICBO Collector cut-off current VCB=100V; IE=0 10 µA

    IEBO Emitter cut-off current VEB=5V; IC=0 10 µA

    hFE-1 DC current gain IC=0.1A ; VCE=5V 40

    hFE-2 DC current gain IC=1A ; VCE=5V 40 200

    Switching times resistive load

    ton Turn-on time 0.5 µs

    IC=1.0A IB1=- IB2=0.1A


    ts Storage time 1.5 µs
    RL=50A;VCCB50V

    tf Fall time 0.5 µs

    hFE-2 Classifications

    M L K

    40-80 60-120 100-200

    2
    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors 2SC2331

    PACKAGE OUTLINE

    Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)

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