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Study of BJT Biasing Circuits.: Faculty of Engineering Department of EEE and COE Undergraduate Program

1) This document describes an experiment to study BJT biasing circuits and their stability against variations in β. 2) Data was collected from simulations and measurements of fixed and self-bias circuits using two BJTs with different β values. 3) The results show that self-bias circuits have greater stability, with smaller percentage changes in voltage and current values compared to fixed-bias circuits, when β is varied.

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tanvir shahriar
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639 views8 pages

Study of BJT Biasing Circuits.: Faculty of Engineering Department of EEE and COE Undergraduate Program

1) This document describes an experiment to study BJT biasing circuits and their stability against variations in β. 2) Data was collected from simulations and measurements of fixed and self-bias circuits using two BJTs with different β values. 3) The results show that self-bias circuits have greater stability, with smaller percentage changes in voltage and current values compared to fixed-bias circuits, when β is varied.

Uploaded by

tanvir shahriar
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd
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AMERICAN INTERNATIONAL UNIVERSITY-BANGLADESH (AIUB)

Faculty of Engineering
Department of EEE and COE
Undergraduate Program

Course: Electronic Devices Exp No: 06 Spring 2019-2020

Title : Study of BJT biasing circuits.

Group no: 01
Submitted by
Name ID Signature Contact Details
CHISTY, MD NOMANUZZAMAN 19-40431-1

Group Members:

SL Name ID Signature
01 Md, Yousuf Afendi 19-39887-1
02 Atiqullah Habib 19-40022-1
03 Al Rafy 19-39551-1
04 KABIR, MD. TAJIMUL 19-40419-1
05 Ayan Roy 18-37868-2
06
07

Submission Date: 08/04/2020

Submitted To

DR. MD. KABIRUZZAMAN


Lecturer
Faculty of Engineering Department of EEE
American International University-Bangladesh

Title: Study of BJT biasing circuits.


Abstract:
1
This experiment is done to establish the proper operating point. It is also done to
study the stability of the operating point with respect to changing β in biasing
circuits.
Introduction:
The operating point (Q) of BJT is very important for amplifiers, since a wrong
‘Q’ point selection increases amplifier distortion. It is imperative to have a
stable ‘Q’ point, meaning that the operating point should not be sensitive to
variation to temperature or BJT β, which can vary widely. In this experiment,
four different circuits will be analyzed for two different β to check the stability
of biasing points.
The analysis of the BJT circuits is a systematic process. Initially, the operating
point of a transistor circuit is determined then the small signal BJT model
parameters are calculated. Finally, the dc sources are eliminated, the BJT is
replaced with an equivalent circuit model and the resulting circuit is analyzed to
determine the voltage amplification (AV), current amplification (Ai), Input
impedance (Zi), Output Impedance (Zo), and the phase relation between the
input voltage (Vi) and the output voltage (Vo).
Theory and Methodology:
The dc analysis is done to determine the mode of operation of the BJT and to
determine the voltages at all nodes and currents in all branches. The operating
point of a transistor circuit can be determined by mathematical or graphical
(using transistor characteristic curves) means. Here we will describe only the
mathematical solution.

We will use the most commonly applied biasing circuit to operate the BJT as an
amplifier. A single power supply is used and the voltage divider network
consisting of RB1 and RB2 is used to adjust the base voltage. Using the
Thevenin equivalent, the voltage divider network is replaced by Vth and Rth
where,

2
The dc analysis of the circuit is simple by applying two KVL's at the input and
the output loop.

If the BJT is in the active mode the following typical values can be observed:

RC is used to adjust the collector voltage. Finally, RE is used to stabilize the dc


biasing point (operating point). Using the above equations, the stability of
biasing points for different transistor of β can be calculated.
Circuit Diagram:

Apparatus:
1. Trainer board.
2. Transistor.
3. Resistors.
4. DC power supply (VCC = +15VDC)
5. Multi-meter.
6. Power supply Cable.

Precautions:
Transistors are sensitive to be damaged by electrical overloads, heat, humidity,
and radiation. Damage of this nature often occurs by applying the incorrect
polarity voltage to the collector circuit or excessive voltage to the input circuit.
One of the most frequent causes of damage to a transistor is the electrostatic
3
discharge from the human body when the device is handled. The applied
voltage, current should not exceed the maximum rating of the given transistor.

Procedure:
1. The value of RC was measured by using multi-meter and record.
2. The value of β was measured by using a multi-meter for each transistor.
3. The fixed bias circuit with transistors was constructed.
4. 500k potentiometer was adjusted until VCE was approximately equal to
VCC/2.
5. VCE , VBE and VRC was measured and after that calculated I C from VRC and
RC. Also IB was calculated from IC.
6. Then replaced the first transistor by second one (Different β) and repeated
the step 5.
7. The fixed bias circuit was constructed and repeated step 4, 5, 6.
8. The self bias circuit was constructed and repeated step 4, 5, 6.
9. Again constructed the self bias circuit and repeated step 4, 5, 6

Data Table:
β VCE VBE VRC IC IB
Fig 1 (a) 257 7.54 0.634 7.43 15.95 0.029
224 7.58 0.617 7.44 15.87 0.029
% of change 12.6 1.03 2.68 0.134 1.06 % 2.68 %
Fig 2 (b) 257 7.59 0.626 7.54 15.77 0.028
224 7.52 0.631 7.50 15.92 0.029
% of change 12.7 0.92 0.478 0.342 0.92 % 0.79 %

Calculation:
We know, IC= VCC -VCE/RC
IB= VCC -VCE/RC
% of change for IC = VC1 – VC2/VC1
IB = VB1 – VB2/VB1

15−7.5
Fig 1(a): IC = 0.470 = 15.95
15−7.58
IC = 0.470 = 15.88
7.58−7.5
% of change: IC= 7.58
x 100 = 1.06 %
0.634−0.617
I B= 0.634
x 100 = 2.68 %
15−7.59
Fig 2(b): IC = 0.470 = 15.77

4
15−7.52
IB = 0.470 = 15.91
7.59−7.52
% of change: IC= 7.59
x 100 = 0.92 %
0.631−0.626
I B= 0.631
x 100 = 0.79 %

Simulation:

Fig: 1(a)

5
Fig: 1(b)

Fig: 2(a)

Fig: 2(b)

6
Questions for report writing:

1. Why biasing is necessary?


Biasing makes the output circuit more stable for different values of β.
2. Compare the circuits of Fig. 1(a) and 1(b) with respect to stability against
variation in β.
From the above table it is clear that the % change of the labeled values is less
for 1(b) then 1(a). Hence, stability of circuit 1(b) is more than 1(a). With rise in
β, VCE rises while VBE and VRC decreases.
3. Compare the circuits of Fig. 2(a) and 2(b) with respect to stability against
variation in β.
From the table above it is clear that the % change for the values are less with
2(b) being more stable than 2(a) and rise in β causes increase in V CE, while VBE
and VRC decreases same as 1(a) and 1(b).
4. Compare the stability of fixed bias circuits with that of self-bias circuits.
Compared to fixed-biased, self-biased circuits are more stable as the %
differences in values are seen to be less for 2(a) and 2(b) than for 1(a) and 1(b).
This is due to the presence of an emitter resistor.
5. What do you mean by stability and Q-point?
Stability refers to less change in values of current and voltage of a BJT circuit
for different values of β. Q-point means more stable circuit. Q-point stands for
quiescent point, which is merely the DC operating point of the circuit.

Discussion and Conclusion:


1. All the apparatus were checked before the start of the experiment. Care
should be taken to avoid short connections. Short connections can
produce heat (due to high current flow) which can be harmful for the
components and damage the component.
2. The experimental results were slightly different from the simulated
results which could happen due to improper connection, contact
resistance and variation of source power.
3. From the data it can be concluded that self-biased circuits are more stable
then fixed-biased circuits.

Reference(s):
1. American International University–Bangladesh (AIUB) Electronic Devices Lab
Manual.
2. A.S. Sedra, K.C. Smith, Microelectronic Circuits, Oxford University Press
(1998)
3. J. Keown, ORCAD PSpice and Circuit Analysis, Prentice Hall Press (2001)
7
4. P. Horowitz, W. Hill, The Art of Electronics, Cambridge University Press
(1989).

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