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    C C1115 Pages 2: Answer Any Two Full Questions, Each Carries 15 Marks

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    Fayaz ali
    This document contains exam questions for a solid state devices course. It covers topics like Fermi-Dirac distribution, diffusion current density, doping concentration calculations, excess carrier distributions, Einstein relations, PN junction characteristics, diode capacitance, minority carrier distributions, MOS capacitor operation, base width modulation, MOSFET scaling, and hot electron effects. The exam has three parts - Part A and B contain numerical problems and Part C contains conceptual questions to be answered in short paragraphs.

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    C C1115 Pages 2: Answer Any Two Full Questions, Each Carries 15 Marks

    Uploaded by

    Fayaz ali
    23 views2 pages
    This document contains exam questions for a solid state devices course. It covers topics like Fermi-Dirac distribution, diffusion current density, doping concentration calculations, excess carrier distributions, Einstein relations, PN junction characteristics, diode capacitance, minority carrier distributions, MOS capacitor operation, base width modulation, MOSFET scaling, and hot electron effects. The exam has three parts - Part A and B contain numerical problems and Part C contains conceptual questions to be answered in short paragraphs.

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    2019 May EC203-F - ktu qbank

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    This document contains exam questions for a solid state devices course. It covers topics like Fermi-Dirac distribution, diffusion current density, doping concentration calculations, excess carrier distributions, Einstein relations, PN junction characteristics, diode capacitance, minority carrier distributions, MOS capacitor operation, base width modulation, MOSFET scaling, and hot electron effects. The exam has three parts - Part A and B contain numerical problems and Part C contains conceptual questions to be answered in short paragraphs.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    23 views2 pages

    C C1115 Pages 2: Answer Any Two Full Questions, Each Carries 15 Marks

    Uploaded by

    Fayaz ali
    This document contains exam questions for a solid state devices course. It covers topics like Fermi-Dirac distribution, diffusion current density, doping concentration calculations, excess carrier distributions, Einstein relations, PN junction characteristics, diode capacitance, minority carrier distributions, MOS capacitor operation, base width modulation, MOSFET scaling, and hot electron effects. The exam has three parts - Part A and B contain numerical problems and Part C contains conceptual questions to be answered in short paragraphs.

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    of 2

    C C1115 Pages 2

    Reg No.:_______________ Name:__________________________


    APJ ABDUL KALAM TECHNOLOGICAL UNIVERSITY
    THIRD SEMESTER B.TECH DEGREE EXAMINATION(S), MAY 2019
    Course Code: EC203
    Course Name: SOLID STATE DEVICES (EC,AE)
    Max. Marks: 100 Duration: 3 Hours

    PART A
    Answer any two full questions, each carries 15 marks. Marks

    1 a) Explain Fermi Dirac distribution function. Plot the Fermi Dirac distribution (4)
    function for an intrinsic semiconductor.
    b) Explain diffusion. Derive an expression for diffusion current density for an n-type (7)
    semiconductor.
    c) A Si sample is doped with 1017As atoms/cm3. What is the equilibrium hole (4)
    concentration p0 at 300K? Where is EF relative to Ei?
    2 a) Draw the graph showing the distribution of excess carrierswith respect to time in (3)
    an n-type semiconductor.
    b) Derive the expressions for equilibrium concentration of electrons and holes using (6)
    Fermi Dirac distribution function.
    c) A direct bandgap semiconductor hasni = 1010 cm-3 donors. Its low level carrier (6)
    lifetime τ isτn = τp = 10-7s.
    i) If a sample of this material is uniformly exposed to a steady optical
    generation rate of gop = 2x1022 EHP/cm2-s; Calculate the excess carrier
    concentration Δn = Δp
    Note : The excitation rate is not low level but assume that αr is the
    same.
    ii) If the carrier lifetime (τ) is defined as the excess carrier concentration
    divided by the recombination rate, what is τ at this excitation level?
    3 a) Explain High field effects. (4)
    b) Derive and explain Einstein relations. (6)
    c) A Ge sample is doped with 1017 Boron atoms/cm3.Determine the carrier (5)
    concentration & Fermi level position at room temperature.ni for Ge = 2.5 x 1013
    cm-3 at room temperature.

    Page 1 of 2

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    C C1115 Pages 2

    PART B
    Answer any two full questions, each carries 15 marks.
    4 a) Draw and explain the VI characteristics of PN junction diode. (4)
    b) Explain the different types of capacitances associated with a p-n junction. (6)
    c) The following data are given for a Si abrupt pn junction at 300k, A=1cm2,Vo= (5)
    0.6V.
    P- side N-side
    NA = 1018 cm-3 ND = 1016 cm-3
    τn= 50 µs τp= 10 µs
    Dn= 34 cm2 / s Dp= 13 cm2 / s
    Calculate Ip(xn = 0) ; In (xp = 0) & the total diode current ; (Given kT/q = 0.026 V)
    5 a) Derive the ideal diode equation. (10)
    b) Differentiate between Zener and Avalanche breakdown mechanisms. (5)
    6 a) Derive an expression for the contact potential of an open circuit p-n junction. (7)
    b) Write short notes on metal semiconductor contacts. (8)

    PART C
    Answer any two full questions, each carries20 marks.
    7 a) Explain the principle of operation of MOS capacitor with suitable energy band (10)
    diagrams.
    b) Explain base width modulation with neat diagrams. (4 )
    c) Briefly explain (6)
    i) MOSFET scaling.
    ii) Hot electron effect.
    8 a) Derive the expression for minority carrier distribution and terminal currents of a (14)
    pnp transistor.
    b) Explain the capacitance – voltage relation for a MOS capacitor with neat diagram. (6)
    9 a) Explain the principle of operation of FINFET. (7)
    b) With neat diagrams, explain the flow of different current components in a pnp (7)
    transistor under active mode of operation.
    c) Draw and explain the drain characteristics of an n-channel MOSFET. (6)
    ****

    Page 2 of 2

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