R15

MALLAREDDY COLLEGE OF ENGINEERING AND TECHNOLOGY, HYDERABAD

B.Tech II Year I Semester Examinations, Model Paper I -2016

Electronic Devices and Circuits

(Common to EEE, ECE, CSE, EIE, BME, IT, MCT, ETM, ECOMPE)

Time: 3 hours Max. Marks: 75

PART-A
Answer all the following questions:
1. (a) What is a pn junction? How is it formed? (2M)
(b) Sketch the energy-band Diagrams for intrinsic and extrinsic semiconductors (3M)
(c) What is meant by rectifier? (2M)
(d) Compare the performance measure of different filters. (3M)
(e) Why Transistor is called Current Controlled Device? (2M)
(f) What is early effect? How does it modify the V-I characteristics of a BJT? (3M)
(g) What is meant by operating point? Explain its significance (2M)
(h) What is the condition for thermal stability and thermal resistance? (3M)
(i) Explain when a FET acts as a voltage variable resistor. (2M)
(j) Explain the drain and transfer characteristics of a JFET in details (3M)

PART-B

Answer all the following questions 10x5=50

2. (a) Draw the V-I characteristics of a diode with zero cut-in voltage and equivalent resistance
of 100Ω. Draw the load line if RL is also 100 Ω.
(b) Explain V-I characteristics of pn junction Diode.
(OR)
3. (a) Explain the constructional and principal operations of SCR and PHOTO diode.
4. Draw and explain the circuit diagram of full-wave rectifier with inductor filter. Derive the
Ripple factor equation.

(OR)
5. Derive expressions for ripple factor, regulation and rectification efficiency of a
Center tapped Transformer Full wave rectifier.

6. (a) Explain different current components in a transistor.

(b) Explain how Transistor acts as an Amplifier

(OR)

7. Draw the circuit diagram of Common Emitter amplifier using accurate h-parameter
model. Derive expressions for A , A , R & R .
V I I O

8. What are the compensation techniques used for VBE and ICO? Explain with the help of
suitable circuits
(OR)

9. (a) Design a collector to base bias circuit using silicon transistor to achieve a stability factor
of 20, with the following specifications: V =16V,V = 0.7V,V = 8V,I = 4mA &
CC BE CEQ CQ

β= 50
(b) Derive condition for thermal stability?

10. (a) With the help of neat sketches and characteristic curves explain the construction &
operation of a JFET and mark the regions of operation on the characteristics.
(b) Derive expression for transconductance in a field effect transistor.
(OR)
11. (a) Explain the construction and principle of operation of Depletion type N-channel
MOSFET
(b) Compare BJT and FET
 R15
MALLAREDDY COLLEGE OF ENGINEERING AND TECHNOLOGY, HYDERABAD
B.Tech II Year I Semester Examinations, Model Paper II -2016

Electronic Devices and Circuits

(Common to EEE, ECE, CSE, EIE, BME, IT, MCT, ETM, ECOMPE)

Time: 3 hours Max. Marks: 75

PART-A
Answer all the following questions:
1. (a) What do you mean by potential barrier for a p-n junction? (2M)
(b) What is the significance of negative resistance of a tunnel diode (3M)
(c) Define peak inverse voltage (PIV). (2M)
(d) Explain FWR working principle with circuit and waveforms. (3M)
(e) What are the three regions of a Transistor? (2M)
(f) What is thermal runway? How can it avoid? (3M)
(g) What is faithful amplification? (2M)
(h) Derive relation between α, β and γ? (3M)
(i) Define the pinch off voltage (Vp) sketch the depletion region before and after
Pinch-off? (2M)
(j) Derive Expression for saturation drain current (3M)
PART-B
Answer all the following questions: 5x10= 50 marks
2. (a) Explain the effect of temperature on V-I characteristics of a diode.

(b) Distinguish between drift and diffusion current in a semiconductor.

OR

3. Explain the working of Tunnel diode with help of energy band diagrams and Draw V-I
Characteristics
4. (a) A Full wave single phase rectifier makes use of 2 diodes, the internal forward resistance
of each is considered to be constant and equal to 30Ω. The load resistance is 1KΩ. The
transformer secondary voltage is 200-0-200V (rms).Calculate VDC, IDC, and Ripple factor
(b) A Zener voltage regulator circuit is to maintain constant voltage at 60 V, over a current range
from 5 to 50 mA. The input supply voltage is 200 V. Determine the value of resistance R to be
connected in the circuit, for voltage regulation from load current IL = 0 mA to IL max, the
maximum possible value of IL. What is the value IL max?

OR
5. (a) Derive expression for FWR Rectifier i) DC load current ii) DC output voltage
iii) Peak Inverse Voltage of each diode IV) Efficiency v) Ripple factor

6. (a) Compare the three transistor amplifier configurations with related to A , A , R and R .
I V i O

(b) For the emitter follower with R = 0.5K, R = 50K, hfe= -50, hre= 1K, h = 25μA/V, h =
S L oe re

1. Calculate A , A , Z and Z
V I i O

(OR)
7).(a) Draw the circuit diagram of a transistor in CB configuration and explain the output
characteristics with the help of different regions.
(b) Calculate the collector current and emitter current for a transistor with α D.C. = 0.99 and ICBO = 50

µA when the base current is 20µA..

8. Draw a Fixed bias circuit and explain its operation. Calculate the Stability factor S,S1.

(OR)
9. Define stability factors for a BJT with Self biasing method. Suggest how this method to
effects on operating point of a BJT circuit

10. (a) Sketch the drain characteristics of MOSFET for different values of V & mark different
GS

regions of operation.
(b) Give the construction details of JFET and explain its operation.
(OR)
11. (a) Write short notes on applications of FET as a voltage variable resistor.
(b) Explain the principle of CS FET amplifier with the help of circuit diagram. Derive the
expressions for A , input impedance and output impedance
V
 R15
MALLAREDDY COLLEGE OF ENGINEERING AND TECHNOLOGY, HYDERABAD
B.Tech II Year I Semester Examinations, Model Paper III -2016

Electronic Devices and Circuits

(Common to EEE, ECE, CSE, EIE, BME, IT, MCT, ETM, ECOMPE)

Time: 3 hours Max. Marks: 75

PART-A
Answer all the following questions:
1.(a) What is mean by zener breakdown (2M)
(b) Explain the effect of temperature on the V-I characteristics of pn junction diode (3M)
(c) What is meant by filter in rectifier circuits (2M)
(d) Bridge rectifier is becoming more and more popular, why? (3M)
(e) Write B.J.T specifications and limitations (2M)
(f) Explain how transistor acts as an Amplifier? (3M)
(g) What is meant by stabilization (2M)
(h) What is thermal runway? How can it avoid? (3M)
(i) State the application of JFET and compare MOSFET (2M)
(j) When FET acts as a voltage variable resistor ( V.V.R)? (3M)
PART-B
Answer all the following questions: 5x10= 50 marks
2. Explain in detail, the reason for exponential rise in forward characteristic of a diode with
suitable mathematical expression.
(OR)
3) a) Explain the construction and working principal of photo diode.
b) Draw the equivalent circuits of diode

4. Draw the circuit diagram of a Full wave bridge rectifier. Explain the operation of circuit
with relevant waveforms
(OR)
5 a) Compare the performance of Inductor filter and capacitor filter.
b) Explain Full wave rectifier with neat diagram?
6. Define the hybrid parameters for a basic transistor circuit and give CE hybrid model.
(b) Explain input and output characteristics of C.E Configuration
(OR)
7. (a) Summarise the salient features of the characteristics of BJT operatives in CE, CB and CC
configurations?
(b) Calculate the collector current and emitter current for a transistor with αD.C. = 0.99 and ICBO = 20
µA when the base current is 50µ A.
8. Draw a Collector feedback bias circuit and explain its operation. Calculate the Stability
factor S
(OR)
9. (a) What is a load line? Explain its significance.
(b) Find the Q-point of self-bias transistor circuit with the following specifications: V =
CC

22.5V, R = 5.6kΩ, R = 1kΩ, R = 90kΩ, R = 10kΩ, V = 0.7V and β = 55. Assume

L C I 2 BE

I >>I .
B CO

10(a) Bring out comparison between JFET and MOSFET.

(b) Draw the circuit’s diagram of common drain amplifier and derive expression for voltage
gain
(OR)
11. (a) Compare Depletion MOSFET and enhancement MOSFET
(b) Explain in detail about generalized FET amplifier
 R15
MALLAREDDY COLLEGE OF ENGINEERING AND TECHNOLOGY, HYDERABAD
B.Tech II Year I Semester Examinations, Model Paper IV -2016

Electronic Devices and Circuits

(Common to EEE, ECE, CSE, EIE, BME, IT, MCT, ETM, ECOMPE)

Time: 3 hours Max. Marks: 75

PART-A
Answer all the following questions:
a) What is diode equation? (2M)
b) Draw the V-I characteristics of SCR & define all related terms. (3M)
c) What is the purpose of bleeder resistance in a rectifier circuit using LC filter? (2M)
d) Write short note on Full wave rectifier (FWR) along with input output waveforms.(3M)
e) Why hybrid parameters are called so? Define those (2M)
f) What factors are to be considered for selecting the operating point Q for an
amplifier? (3M)
g) Why does potential divider method of biasing become universal? (2M)
h) Why FET is unipolar and BJT is Bipolar Device (3M)
i) Draw the symbols of JFET ( N Channel/P channel ) MOSFET (Depletion MOSFET
(n-channel/p-channel) and Enhancement MOSFET (n-channel/p-channel) (2M)
j) Draw the low frequency hybrid equivalent circuit for CE,CB and CC (3M)
PART-B

Answer all the following questions: 5x10= 50 marks

2. (a) Explain the V-I characteristics of Zener diode and distinguish between Avalanche and
Zener Break downs.
(b) In a Zener diode regulator, the supply voltage = 300V, V = 220V, I = 15mA and load
z z

current = 25mA. Calculate the value of resistor required to be connected in series with the
Zener diode.
(OR)
3. Draw the basic structure of Varactor diode and explain its operation and V-I
Characteristics.
4. A 230 V, 60Hz voltage is applied to the primary of a 5:1 step down, center tapped
transformer used in a full wave rectifier having a load of 900Ω .If the diode resistance
and the secondary coil resistance together has a resistance of 100Ω, determine
i) Dc voltage across the load. ii) Dc current flowing through the load.
iii) Dc power delivered to the load. iv) PIV across each diode.
(OR)
5. (a) Design ripple factor of LC filter for a Full wave rectifier
(b) In a full-wave rectifier using an LC – filter L-10mH, C=100µF and RL = 500Ω .
Calculate IDC , VDC for an input Vi=300sin (100 t)
6. (a) Draw the circuit diagram of a transistor in CB configuration and explain the output
characteristics with the help of different regions.
(b) In a germanium transistor collector current is 51mA, when base current is 0.4mA. If h =
fe

β = 125, Calculate cut off current, I .

dc CEO

(OR)
7. Explain the input and output characteristics of a transistor in CC configuration
(b) Calculate the values of IE, αdc and βdc for a transistor with IB=13µA,
IC=200mA,ICBO=6µA. Also determine the new level of IC which will result from reducing
IB to 100mA
8. Draw a Self bias circuit and explain its operation. Calculate the Stability factor S,S ,S
(OR)
9 (a) what is a load line? Explain its significance.
(b) Find the Q-point of self-bias transistor circuit with the following specifications: VCC=
22.5V, RL=5.6kΩ,R =1kΩ,R =90kΩ,R =10kΩ,V = 0.7V and β = 55. Assume IB>>ICO.
C I 2 BE

10) The field effect transistor is called a voltage-sensitive electronic control device. Explain
why is the case?
b) Name and define the circuit parameters of the JFET. How are they related to each other?
(OR)
11.(a) Explain the construction and principle of operation of Enhancement mode N-channel
MOSFET.
b) Compare BJT & FET.
 R15
ALLAREDDY COLLEGE OF ENGINEERING AND TECHNOLOGY, HYDERABAD
B.Tech II Year I Semester Examinations, Model Paper V -2016

Electronic Devices and Circuits

(Common to EEE, ECE, CSE, EIE, BME, IT, MCT, ETM, ECOMPE)

PART-A

Time: 3 hours Max. Marks: 75

Answer all the following questions: 5x2= 10 marks
(a) Sketch the V-I characteristics of p-n junction diode for forward bias? (2M)
(b) Explain zener diode as a voltage regulator. (3M)
(c) Distinguish between the incremental resistance and the apparent resistance of
the diode (2M)
(d) Derive efficiency of FWR. (3M)
(e) In a filter circuit, why capacitor is a parallel combination and series combination
for inductor. (2M)
(f) Define Transformer Utilization Factor (TUF). (2M)
(g) What is transistor? (3M)
(h) Draw voltage divider bias circuit; derive an expression for its stability factor. (2M)
(i) Explain transfer characteristics of JFET with its non-linear relations (3M)
(j) Explain tunneling effect (2M)

PART-B

Answer all Answer all the following questions: 5x10= 50 marks

2. (a) Explain the concept of diode capacitance. Derive expression for transition capacitance?
(b) Find the value of D.C. resistance and A.C resistance of a Germanium junction diode at
0
25 C with reverse saturation current, I = 25μA and at an applied voltage of 0.2V across
o

the diode.

(OR)
3. With neat energy band diagrams, explain the V-I characteristics of Tunnel diode in detail.
Also explain the negative-resistance region in the characteristics and applications of
Tunnel diode.

4. Draw the circuit diagram of full-wave rectifier with inductor filter. Explain its operation
with necessary equations.

(OR)

5. Derive the expression for the ripple factor of π-Section filter when used with a Full-
wave-rectifier. Make necessary approximations.
6.(a) Based on the currents flowing through a BJT illustrate the amplification process.
(b) Compare CB, CC, and CE configurations
(OR)
7. Draw the circuit diagram, AC equivalent & small signal equivalent of Common Emitter
amplifier using accurate h-parameter model. Derive expressions for A , A , R & R .
V I I O

8. Explain the basic requirements of transistor biasing. Verify these requirements in

collector to base bias circuit.
(OR)
9. Design a fixed bias circuit using silicon transistor, with the following specifications: V
CC

= 16V, V = 0.7V, V = 8V, I = 4 mA & β= 50.

BE CEQ CQ

10. (a) A self biased P-channel JFET has a pinch-off voltage of VP=5V and IDSS=12mA .the
supply voltage is 12V .Determine the values of RD and RS so that ID=5ma and VDS=6V
(b) List the advantages and disadvantages of FET over MOSFET
(OR)
11. (a) Explain self biasing of Common source JFET
(b) Explain the significance of threshold voltage of an E-MOSFET.