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    Origin Electric Co., LTD

    Uploaded by

    Tan Hung Luu
    This document provides information on Origin's MS1250D225N snubber module for IGBTs. The module features special low voltage drop and fast reverse recovery diodes, as well as a metalized polypropylene film capacitor for low loss. It has a compact size and low inductance due to short internal connections. The module is intended for snubber circuits in inverters and stabilized power supplies. It conforms to RoHS regulations and has absolute maximum ratings of 1200V peak reverse voltage and 50A average forward current for the diodes.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Origin Electric Co., LTD

    Uploaded by

    Tan Hung Luu
    103 views2 pages
    This document provides information on Origin's MS1250D225N snubber module for IGBTs. The module features special low voltage drop and fast reverse recovery diodes, as well as a metalized polypropylene film capacitor for low loss. It has a compact size and low inductance due to short internal connections. The module is intended for snubber circuits in inverters and stabilized power supplies. It conforms to RoHS regulations and has absolute maximum ratings of 1200V peak reverse voltage and 50A average forward current for the diodes.

    Original Description:

    Datasheet

    Original Title

    MS1250D225N

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    © © All Rights Reserved

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    This document provides information on Origin's MS1250D225N snubber module for IGBTs. The module features special low voltage drop and fast reverse recovery diodes, as well as a metalized polypropylene film capacitor for low loss. It has a compact size and low inductance due to short internal connections. The module is intended for snubber circuits in inverters and stabilized power supplies. It conforms to RoHS regulations and has absolute maximum ratings of 1200V peak reverse voltage and 50A average forward current for the diodes.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    103 views2 pages

    Origin Electric Co., LTD

    Uploaded by

    Tan Hung Luu
    This document provides information on Origin's MS1250D225N snubber module for IGBTs. The module features special low voltage drop and fast reverse recovery diodes, as well as a metalized polypropylene film capacitor for low loss. It has a compact size and low inductance due to short internal connections. The module is intended for snubber circuits in inverters and stabilized power supplies. It conforms to RoHS regulations and has absolute maximum ratings of 1200V peak reverse voltage and 50A average forward current for the diodes.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    Ｏｒｉｇｉｎ‘ｓ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｄｅｖｉｃｅｓ

    ＭＳ１２５０Ｄ２２５Ｎ （１２００Ｖ/５０Ａ）

    Ｓｎｕｂｂｅｒ Ｍｏｄｕｌｅ ｆｏｒ ＩＧＢＴ


    ＭＳ１２５０Ｄ２２５Ｎ
    ● Features
    ● Outline Drawing Unit : mm , Tolerance : ±0.1
    ・ Special diodes which are low VF and short reverse
    オリジンマーク 品名
    recovery time are used.
    ・ Low loss by use of metalized polypropylene film
    ＭＳ１２５０Ｄ１０５Ｎ
    condenser.
    Ｅ Ｃ Ｒ
    Ｅ Ｃ Ｒ
    ・ Low inductance by connection of shortest distance.
    ロット番号
    ・ Compact size and light weight of equipments are
    2-φ7 M4 NCﾅｯﾄ(ｸﾘﾝﾁﾝｸﾞﾅｯﾄ)
    possible.
    87

    ● Applications 11

    23.5
    8 4 7
    ・ For snubber circuits of IGBT such as inverters and

    43
    1

    2
    stabilized power supplies. 8 8
    62

    37.5
    12

    8 5 6
    6
    ● Structures
    1 4

    1.5
    ・ Diode : Silicon epitaxial planar diode. 15 15 35
    ・ Condenser : Metalized film condenser. 28 29 26 43.5

    ・ Conforms to RoHS regulations

    ● Absolute Maximum Ratings of Snubber module


    Items Symbol Conditions Ratings Unit
    Operating Temperature Temp. -40～+85 ℃
    Voltage VRM 1200 V
    50-60Hz Sinusoidal Waveform from Terminals to case for 1 Min. 2500 Ｖ
    RMS Voltage Vｉｓｏ
    50-60Hz Sinusoidal Waveform from Terminals to case for 1 Sec. 3000 V
    RMS Resistance Ｒｉｓｏ DC 500V 100 MΩ

    ● Absolute Maximum Ratings of Diode


    Items Symbol Conditions Ratings Unit
    Peak Reverse Voltage VRM 1200 V
    Average Rectified Forward Current IO TＴ =50℃ (Terminal temperature), Resistance Load 50 A
    Peak Forward Surge Current IFSM Ta=25℃, 50Hz,Single-phase, Half sin wave, Non-Repetitive 500 A
    Operating Junction Temperature Ｔｊ -40～+150 ℃
    Storage Temperature Tｓｒｇ -40～+150 ℃

    ● Electrical Characteristics of Diode


    Items Symbol Conditions MAX. Unit
    Forward Voltage Drop VＦ Ta=25℃, ＩＦ=50A 2.7 V
    Reverse Current ＩR Ta=25℃, ＶＲ=1200V 100 μA
    Reverse Recovery Time ｔｒｒ Ta=25℃, ＩＦ=30A, -dif/dt=300A/μs 200 ns

    Origin Electric Co., Ltd.


    1 OSDS9373_PD-05/2007
    Ｏｒｉｇｉｎ‘ｓ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｄｅｖｉｃｅｓ
    ＭＳ１２５０Ｄ２２５Ｎ （１２００Ｖ/５０Ａ）

    ● Characteristics of Condenser
    Items Performance Specifications
    Capacitance 2.2 μF ±10%
    ｔａｎδ 0.001
    Current (*1) 220 A P-P

    220AP-P

    6μs

    66.6μs

    (*1) Current Waveform

    Origin Electric Co., Ltd.


    2 OSDS9373_PD-05/2007

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