Vidyavardhini’s College of Engineering & Technology
Department of Electronics & Telecommunication Engineering
NAME-: SURAJ SHELAR
ROLL NO :-42
BRANCH-: EXTC/SEM
Experiment No.8
Aim:
To plot drain and transfer characteristics of a MOSFET using LTspice software.
Software:-
LTspice software.
Circuit Diagram:
Theory:
Vidyavardhini’s College of Engineering & Technology
Department of Electronics & Telecommunication Engineering
The MOSFET is the most common semiconductor device in digital and analog circuits, and the most
common power device. MOSFET scaling and miniaturization has been driving the rapid exponential growth
of electronic semiconductor technology and enables high-density integrated circuits (ICs) such as memory
chips and microprocessor. The transfer characteristic curve can locate the gate voltage at which the
transistor passes current and leaves the OFF state.
MOSFET operates by creating or “enhancing” its conductive channel between the source and drain regions
producing a type of MOSFET commonly called an n-channel Enhancement-mode MOSFET, which simply
means that unless we bias them positively on the gate (negatively for the p-channel), no channel current.
Figure 1a shows the transfer characteristics (drain-to-source current IDS versus gate-to-source voltage VGS)
of n-channel Enhancement-type MOSFETs. From this, it is evident that the current through the device will
be zero until the VGS exceeds the value of threshold voltage VT. This is because under this state, the device
will be void of channel which will be connecting the drain and the source terminals. Under this condition,
even an increase in VDS will result in no current flow as indicated by the corresponding output characteristics
(IDS versus VDS) shown by Figure 1b. As a result, this state represents nothing but the cut-off region of
MOSFET’s operation.
Next, once VGS crosses VT, the current through the device increases with an increase in IDS initially (Ohmic
region) and then saturates to a value as determined by the VGS (saturation region of operation) i.e., as VGS
increases, even the saturation current flowing through the device also increases. This is evident by Figure
1b where IDSS2 is greater than IDSS1 as VGS2 > VGS1, IDSS3 is greater than IDSS2 as VGS3 > VGS2, so on and so
forth. Further, Figure 1b also shows the locus of pinch-off voltage (black discontinuous curve), from which
VP is seen to increase with an increase in VGS.
Vidyavardhini’s College of Engineering & Technology
Department of Electronics & Telecommunication Engineering
(Drain characteristics)
LTspice:
LTspice is a high-performance SPICE simulation software, schematic capture and waveform
viewer with enhancements and models for easing the simulation of analog circuits. Included in the
download of LTspice are macromodels for most Analog Devices switching regulators, amplifiers,
as well as a library of devices for general circuit simulation.
Procedure: -
1. Make new schematic.
2. Place component as per circuit diagram and connect it.
3. Select component values.
4. Select simulation profile as DC sweep.
5. Transfer characteristics vary VGS voltage from 0 – 10V in the step of 1Volt and plot the
characteristics.
6. Drain characteristics Vary VDS 0-30v in the step of 0.1V and VGS from 0 – 10V in the
step of 2V. Plot drain characteristics.
Vidyavardhini’s College of Engineering & Technology
Department of Electronics & Telecommunication Engineering
Observation table
Transfer characteristics:
VDS =30V
VGS(volt) ID(mA)
0.5 0.000
1 0.010
2 0.042
3 0.089
4 0.168
5 0.257
6 0.361
7 0.498
8 0.634
9 0.812
10 1.000
Vidyavardhini’s College of Engineering & Technology
Department of Electronics & Telecommunication Engineering
Output characteristics:
Vgs = 0V Vgs = 2V Vgs = 4V Vgs = 6V Vgs = 8V Vgs = 8V
VDS ID VDS ID VDS ID VDS ID VDS ID VDS ID
(V) (mA) (V) (mA) (V) (mA) (V) (mA) (V) (mA) (V) (mA)
0 0.003 0 0.003 0 0.003 0 0.003 0 0.003 0 0.003
1 0.003 1 0.026 1 0.071 1 0.106 1 0.151 1 0.186
2 0.003 2 0.037 2 0.134 2 0.197 2 0.271 2 0.351
3 0.003 3 0.037 3 0.151 3 0.271 3 0.397 3 0.511
4 0.003 4 0.037 4 0.151 4 0.317 4 0.477 4 0.614
5 0.003 5 0.037 5 0.163 5 0.351 5 0.551 5 0.757
6 0.003 6 0.037 6 0.163 6 0.357 6 0.597 6 0.837
7 0.003 7 0.037 7 0.163 7 0.363 7 0.631 7 0.911
8 0.003 8 0.037 8 0.163 8 0.363 8 0.637 8 0.951
9 0.003 9 0.037 9 0.163 9 0.363 9 0.643 9 0.986
10 0.003 10 0.037 10 0.163 10 0.363 10 0.643 10 1.003
15 0.003 15 0.037 15 0.163 15 0.363 15 0.643 15 1.009
20 0.003 20 0.037 20 0.163 20 0.363 20 0.643 20 1.009
25 0.003 25 0.037 25 0.163 25 0.363 25 0.643 25 1.009
30 0.003 30 0.037 30 0.163 30 0.363 30 0.643 30 1.009
Waveforms:
Transfer Characteristics:
Vidyavardhini’s College of Engineering & Technology
Department of Electronics & Telecommunication Engineering
Vidyavardhini’s College of Engineering & Technology
Department of Electronics & Telecommunication Engineering
Drain Characteristics:
Vidyavardhini’s College of Engineering & Technology
Department of Electronics & Telecommunication Engineering
POST EXPERIMENT QUESTIONS:
Q.1 Explain different region of Drain characteristics.
Vidyavardhini’s College of Engineering & Technology
Department of Electronics & Telecommunication Engineering
Conclusion: -
