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A733 Datasheet PDF

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WEITRON A733

PNP Transistor COLLECTOR


P b Lead(Pb)-Free 2.

3. 1. EMITTER
BASE 2. COLLECTOR
3. BASE
1.
EMITTER TO-92

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


Parameter Symbol Value Units
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -50 V
Emitter-Base Voltage VEBO -5 V
Collector Current -Continuous IC -100 mA
Collector Power Dissipation PC 250 mW
Junction Temperature TJ 150 ℃
Storage Temperature Tstg -55 to +150 ℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC= -50uA,IE=0 -60 V

Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -50 V

Emitter-base breakdown voltage V(BR)EBO IE= -50uA, IC=0 -5 V

Collector cut-off current ICBO VCB= -60V, IE=0 -0.1 uA

Emitter cut-off current IEBO VEB= -5 V, IC=0 -0.1 uA

DC current gain hFE VCE= -6V, IC= -1mA 90 200 600

Collector-emitter saturation voltage VCE(sat) IC= -100mA, IB=- 10mA -0.18 -0.3 V

Base-emitter voltage VBE VCE=-6V,IC=-1.0mA -0.58 -0.62 -0.68 V

Transition frequency fT VCE=-6V,IC=-10mA 100 MHz

Collector output capacitance Cob VCB=-10V,IE=0,f=1MHZ 6 pF

VCE=-6V,IC=-0.3mA,
Noise figure NF 20 dB
Rg=10kΩ,f=100HZ

CLASSIFICATION OF hFE
Rank R Q P K

Range 90-180 135-270 200-400 300-600

WEITRON 1/2 09-Dec-08


hpp://www.weitron.com.tw
A733
Ratings and Characteristic Curves

WEITRON 2/2 09-Dec-08


hpp://www.weitron.com.tw

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