Diyot, BJT ve MOS Yapısı,

SPICE Parametreleri,
Kütüphane Kullanımı,
Makromodel
DOÇ. DR. REVNA ACAR VURAL
H3
SPICE Parametreleri: Diyot
 Diyot Tanım Bağıntısı

 ID ve VD : diyot akım ve gerilimi

 qVD
  n : idealite faktörü : n = 1-2

I D  I S  e nkT
 1  k : Boltzmann sabiti
T : Kelvin cinsinden sıcaklık
 


 q: Elektron yükü
 kT/q : Vth, termal gerilim ( 26 mV @ 300K)
 Basitleştirme:

 VD negatif ise

I D ~ IS
 VD positif ise

qVD
nkT
ID ~ ISe
SPICE Diyot Modelleme
 Statik DC Diyot Modeli

RS direnci eklenerek bağlantı

hatlarının etkisi ve omik kontak
dirençleri modellenir.
Dinamik DC Diyot
Modeli
Simulatörde Diyot Tanımlama
 N4002 için SPICE Parametreleri
*** Power Diode *** Type of Diode
.MODEL D1N4002-X D Part Number
( IS=14.11E-9 Reverse Saturation Current
N=1.984 Ideality Factor
RS=33.89E-3 Forward Series Resistance
IKF=94.81 High-Level Injection Knee Current in Forward Bias
XTI=3 Temperature Dependence of Reverse Saturation Current
EG=1.110 Energy Bandgap of Si
CJO=51.17E-12 Junction Capacitance at Zero Applied Bias
M=.2762 Grading Coefficient Inversely Proportional to Zener Resistance
VJ=.3905 Turn-on Voltage
FC=.5 Coefficient Associated with Forward Bias Capacitance
ISR=100.0E-12 Reverse Saturation Current During Reverse Bias
NR=2 Ideality Factor During Reverse Bias
BV=100.1 Breakdown Voltage
IBV=10 Current at Breakdown Voltage
TT=4.761E-6 ) Transit Time of Carriers Across p-n Juntion
SPICE Parametreleri: BJT
A General Large-Signal Model For The BJT:
The Ebers-Moll Model

 vBE   vBE 
   
 VT   VT 
IDE ISE  e  1 iDE ISE  e  1

 vBC   vBC 
   
 VT   VT 
iDC ISC  e  1
IDC ISE  e  1
An npn resistor and its Ebers-Moll (EM) model. ISC and ISE are
the scale or saturation currents of diodes DE (EBJ) and DC
F forwarded  of the transistor source (close to 1) (CBJ).
More General – Describe Transistor in any mode of operation.
Base for the Spice model.
R reverse  of the transistor source (0.02 - 0.5
Low frequency only
 A General Large-Signal Model For The BJT:
The Ebers-Moll Model – Terminal Currents
 F ISE  R  ISC IS

iE iDE   R  iDC iC iDC   R  iDE

iB  1   F iDE  1   R iDC

 vBE   vBC  F
   
IS  F
VT   VT  1  F
iE  e  1   IS  e  1
F

 vBE   vBC  R
    R
IS  VT  IS  VT  1  R
iC  e  1   e  1
F R

 vBE   vBC 
   
IS  VT  IS  VT 
iB  e  1   e  1
F R
 A General Large-Signal Model For The BJT:
The Ebers-Moll Model – Forward Active Mode
vBE

IS Since vBC is negative and its magnitude

 IS 
VT 1 
e  Is usually much greater than VT the
iE
F  1
F 
  Previous equations can be approximated
as

vBE

 IS   1
VT 1
iC IS e  
 R 

vBE

IS
e
VT

 IS 
1

1 
R 
iB
F F
 
A General Large-Signal Model For The BJT:
The Ebers-Moll Model – Normal Saturation

Collector current will be  forced  IB  forced   F

In saturation both junctions are forwarded biased. Thus VBE and VBC
are positive and their values greater than VT.
Making these approximations and substituting
iB IB and iC  forced  IB

results in two equations that can be solved to obtain VBE and VBC.
The saturatuion voltage can be obtained as the dif ference between the two:

 
 1  forced
 1 

 R 
VCEsat VT ln  
 forced
 1 
 F 
 
A General Large-Signal Model For The BJT:
The Ebers-Moll Model – Reverse Mode

Note that the currents indicated have positive

values. Thus, since ic = -I2 and iE = -I1, both iC
I1 and IE will be negative. Since the roles of the
emitter and collector are interchanged, the
transistor in the circuit will operate in the active
mode (called the reverse active mode) when
the emitter-base junction is reverse-biased. In
such a case
IB I2
I1 = beta_R . IB

This circuit will saturate (reverse saturation

mode) when the emitter-base junction
becomes forward-biased.

I1/IB < beta_R

A General Large-Signal Model For The BJT:
The Ebers-Moll Model – Transport Model npn BJT

The transport model of the npn BJT. This model is exactly equivalent to the Ebers-Moll model. Note that the
saturation currents of the diodes are given in parentheses and iT is defined by Eq. (4.117).
 BJT Dahili Kapasitörleri

IC
Cde F Base charging or Dif fusion capacitance
VT

Cje0 Base Emitter Junction capacitance

Cje
m
 VBE 
1   m - 0.2 - 0.5 grading coefficient
 V0e

C0
C
m Collector Base Juntion Capacitance
 VCB 
 1  
 V0c


C Cde  Cje
 SPICE Simülatörde BJT Kullanımı
npn pnp

C
C

B
B

E
E
PSPICE A/D’de BJT MODEL TANIMLAMA
Level 1: Gummel-Poon
Level 2: Quasi-saturation
.
.
.
Level 8: Hicum
Şematik Örnek
Dependence of ic on the Collector Voltage
Dependence of ic on the Collector Voltage – Early Effect
SPICE Parametreleri: MOSFET
Schimann and Hodges Model
SPICE L1 Static Model
Equivalent Circuit, MOSFET
Transient Analysis
 Carry Logic

 assign cout = (a&b) | (a&c) | (b&c); .SUBCKT CARRY A B C COUT VDD GND
MN1 I1 A GND GND NMOS W=1U L=0.18U AD=0.3P AS=0.5P
g1 MN2 I1 B GND GND NMOS W=1U L=0.18U AD=0.3P AS=0.5P
a x MN3 CN C I1 GND NMOS W=1U L=0.18U AD=0.5P AS=0.5P
b MN4 I2 B GND GND NMOS W=1U L=0.18U AD=0.15P AS=0.5P
g2 g4 MN5 CN A I2 GND NMOS W=1U L=0.18U AD=0.5P AS=0.15P
a y MP1 I3 A VDD VDD PMOS W=2U L=0.18U AD=0.6P AS=1 P
cout
c MP2 I3 B VDD VDD PMOS W=2U L=0.18U AD=0.6P AS=1P
g3 MP3 CN C I3 VDD PMOS W=2U L=0.18U AD=1P AS=1P
b z MP4 I4 B VDD VDD PMOS W=2U L=0.18U AD=0.3P AS=1P
c a p1 b p2 b p4 MP5 CN A I4 VDD PMOS W=2U L=0.18U AD=1P AS=0.3P
i4 MN6 COUT CN GND GND NMOS W=2U L=0.18U AD=1P AS=1P
c p3 i3 a p5 p6
cn MP6 COUT CN VDD VDD PMOS W=4U L=0.18U AD=2P AS=2P
cout
c n3 i1 a n5 n6 CI1 I1 GND 2FF
i2 CI3 I3 GND 3FF
a n1 b n2 b n4 CA A GND 4FF
CB B GND 4FF
CC C GND 2FF
CCN CN GND 4FF
Transistors? Gate Delays? CCOUT COUT GND 2FF
.ENDS