HCMUT – Falculty of Electrical and Electronics Engineering

Course: Solid State Electronic Devices (EE2411) – Instructor: Hồ Trung Mỹ

Solved problems for Chapter 7 – BJT
Notes:
· VT = 0.026 V @ 300K ; VON (Si) = 0.7 V
· For Si npn-BJT: VBE-ON = 0.7V, VBEsat = 0.8 V, VCEsat = 0.2 V.
· For Si pnp-BJT: VEB-ON = 0.7V, VEBsat = 0.8 V, VECsat = 0.2 V.

1. For following cases, what is operating region of BJT

a) NPN: VBE = 0.8 V, VCE = 0.4 V d) PNP: VCB = 0.9 V, VCE = 0.4 V
b) NPN: VCB = 1.4 V, VCE = 2.1 V e) PNP: VEB = 0.6 V, VCE = –0.4 V
c) NPN: VBE = −1.2 V, VCB = 0.6 V f) PNP: VBC = 0.6 V, VEC = 1.3 V
Ans.
Common rules for solving this problem as follows:
i) For npn-BJT, we check the bias voltage of JE and JC:
JE: VBE = VB –VE = VBC + VCE = VCE – VCB = VBC–VEC > 0 : forward bias
JC: VBC = VB –VC = VBE + VEC = VBE – VCE < 0 : reverse bias

i) For npn-BJT, we check the bias voltage of JE and JC:

JE: VEB = VE – VB = VEC+VCB = VEC–VBC =VCB – VCE > 0 : forward bias
JC: VCB = VC – VB = VCE + VEB = VEB –VEC < 0 : reverse bias
Applying i) for npn-BJT NPN with cases a), b), and c), we have:
Case VBE [V] JE VBC [V] JC Operating region
a) 0.8 > 0 Forward 0.8 – 0.4 = 0.4 > 0 Forward Saturation
b) 2.1 – 1.4 > 0 Forward –1.4 < 0 Reverse Forward active
c) –1.2 < 0 Reverse –0.6 < 0 Reverse Cut-Off

Applying ii) for pnp-BJT NPN with cases d), e), and f), we have:
Case VEB [V] JE VCB [V] JC Operating region
d) 0.9 – 0.4 > 0 Forward 0.9 > 0 Forward Saturation
e) 0.6 > 0 Forward 0.6 – 0.4 > 0 Forward Saturation
f) 1.3 – 0.6 > 0 Forward –0.6 < 0 Reverse Forward active
2. For following cases, what is operating region of BJT

SSED – Solved problems For Chapter 7 – page 1/6

Ans.
For npn-BJT NPN with cases a), b), and c), we have:
Case VBE [V] JE VBC [V] JC Operating region
a) 0.7 > 0 Forward 0.7 – 15 = –14.3 < 0 Reverse Forward active
b) –3 < 0 Reverse –3 – 18 = –21 < 0 Reverse Cut-Off
c) 0.7 > 0 Forward 0.7 – 0 > 0 Forward Saturation

For pnp-BJT NPN with cases d), e), and f), we have:
Case VEB [V] JE VCB [V] JC Operating region
d) 0.7 > 0 Forward 0.7 – 0 > 0 Forward Saturation
e) 0.7 > 0 Forward 0.7 – 18 < 0 Reverse Forward active
f) –2 < 0 Reverse –2 – 20 = –22 < 0 Reverse Cut-Off

3. Find IE, VCE and VBC of BJT in the figures 1 and 2.

Fig. 1 Fig. 2
Ans.
· Figure 1
With bias voltages in the circuit, we find both JE and JC under reverse bias
Þ BJT is OFF Þ IE = IC = IB = 0
Since (if the potential at terminal B is selected as ground potential):
VCE = VC – VE = 10V – 15V = –5V
and
VBC = –10V

· Figure 2
With bias voltages in the circuit, we find JE under forward bias and JC under reverse bias
Þ BJT in forward active region Þ IE = (20V – 0.7V)/39KW = 0.495 mA
if the potential at terminal B is selected as ground potential, we have
VE = 0.7V
and
VC = –20V + 20KW x IC » –20V + 20KW x IE = –20V + 20KW x 0.495mA = –10.1V
Therefore:
VEC = VE – VC = 0.7V – (–10.1V) = 10.8V
VCB = VC–VB = VC = –10.1V

4. Find the emitter efficiency ge, the base transport factor B and the common emitter current gain b of npn-
BJT with given parameters: NDE = 1x1018cm–3, NAB = 1x1016cm–3, Dn = Dp, WB = 100nm, và Lp= Ln = 1µm.
Ans.
a) The emiiter efficiency ge
From theory, we have

I EP p D W
g e » 1- = 1 - e0 E B
I EN nb 0 DB LE
where pe0 = ni2/NDE ; nb0 = ni2/NAB
DE = diffusion coefficient of minority carriers at emiiter region = Dp
DB = diffusion coefficient of minority carriers at base region = Dn
LE = diffusion length of minority carriers at emitter region = Lp

SSED – Solved problems For Chapter 7 – page 2/6

 After replacements in ge , we have the following expression of ge as follows:
N AB D p WB
g e » 1-
N DE Dn L p
Since, ge = 1 – (1016/1018)(1)(100/1000) = 1 – 10-3 = 0.999
Thus, ge = 0.999

b) The base transport factor B

From theory, we have
2
1 æW ö
B » 1 - ç Bn ÷
2 è LB ø
where WBn = width of neutral base region » WB
LB = diffusion length of minority carriers at base region = Ln
Since B = 1 – (1/2)(100/1000)2 = 0.995
Thus, B = 0.995

c) The common emitter current gain b

We have: a = Bge = 0.995 x 0.999 = 0.994 Þ b = a/(1–a) = 0.994/(1–0.994) »166
Thus, b = 166

Fig. 3 Fig. 4 Fig. 5

5. Given a LED circuit in Fig. 3, BJT has b of 100. LED has the conduction voltage VLED(on) of 1.5V and
the driving current ILED of 20mA. LED is ON when control voltge VI = 0V, otherwise LED is OFF when
VI = 5V. Find:
a) The value of RC for BJT in saturation mode (LED is ON) when RB = 1 KW.
b) The value range of RC for BJT in saturation mode (LED is ON) when RB = 1 KW.
c) The value range of RC for BJT in forward active mode (LED is ON) when RB = 1 KW.
d) The value range of RB for BJT in saturation mode (LED is ON) when RC in the value range of b).
e) What is b of BJT for BJT in saturation mode with LED is ON when RB = 1 KW and RC =170 W.
Ans.
a) The value of RC for BJT in saturation mode (LED is ON) when RB = 1 KW.
When BJT in saturation mode, we have
VCC = 5V = RCIC + VLED + VCEsat where IC = ILED =20mA
Therefore RC = (VCC–VLED– VCEsat)/ILED = ( 5V–1.5V–0.2V)/20mA = 3.3V/20mA = 165W.
Thus, RC =165W

b) The value range of RC for BJT in saturation mode (LED is ON) when RB = 1 KW.
· First method: Consider 0 £ VCE £ VCEsat = 0.2V
We have: VCE = VCC – RCILED – VLED or 0 £ VCC – RCILED – VLED £ VCEsat = 0.2V
Therefore (VCC –VLED –VCEsat)/ILED £ RC £ (VCC –VLED)/ILED
(5V –1.5 –0.2)/20mA £ RC £ (5V –1.5V)/20mA
165 W £ RC £ 175 W

SSED – Solved problems For Chapter 7 – page 3/6

· Second method: JC in forward bias, i.e. VBC > 0 or VB > VC
We have: VB = VBEsat = 0.8V and VC = VCC – RCIC – VLED = VCC – RCILED – VLED
Therefore 0.8V > VCC–RCILED–VLED = 5V –RCx20mA–1.5V
RC > (5V–1.5V–0.8V)/20mA = 135 W
RC > 135 W
Furthermore, in saturation mode: VCE ³ 0 Þ VCC–RCILED–VLED ³ 0 Þ RC £ (VCC –VLED)/ILED= 175W
Thus, 135 W < RC £ 175 W

v Remarks:
· Second method give more exact solutions because VCEsat of 0.2V is the typical value
but in practice VCEsat has various values with specific BJTs.
· In practice, JC in forward bias with VBC of 0.7V.

c) The value range of RC for BJT in forward active mode (LED is ON) when RB = 1 KW
In forward active mode, JC in reverse bias, i.e.VBC < 0 or VB < VC
We have: VB = VBE = 0.7V and VC = VCC – RCIC – VLED = VCC – RCILED – VLED
Therefore 0.7V < VCC – RCILED – VLED = 5V – RC x 20mA – 1.5V
RC < (5V – 1.5V – 0.7V)/20mA = 140 W
RC < 140 W (If we use the condition VCE > VCEsat = 0.2 V Þ RC < 165 W)
Note: In practice VCB > 0.4V

d) The value range of RB for BJT in saturation mode (LED is ON) when RC in the value range of b)
In saturation mode: bIBsat > ICsat
where IBsat = (VI – VBEsat)/RB and ICsat = ILED
Therefore RB < b(VI – VBEsat)/ ILED = 100(5V – 0.8)/20mA = 21KW
Thus, 0 £ RB < 21 KW

e) What is b of BJT for BJT in saturation mode with LED is ON when RB = 1 KW and RC =170 W
In saturation mode: bIBsat > ICsat
where IBsat = (VI – VBEsat)/RB and ICsat = ILED
Therefore b > ICsat / IBsat = RB ILED/(VI – VBEsat) = 1KW x 20mA/(5V – 0.8V) = 4.76
Thus: b > 4.76 (typical value of b : 70 – 120 Þ almost BJTs sastify this condition)

6. Design of a battery charging circuit with Fig. 4, tunable charging current in the range 10mA to 100mA.
It means that we have to find values of VCC, R1, R2 (variable resistor) for Q1 (b = 100) acting as tunable
constant current source with IC = 10mA to 100mA.
Ans.
Assume that BJT in forward active mode and large signal model with VBE = 0.7V.
Therefore IC = b IB where IB=(VCC–VBE)/(R1+R2)
and with the condition IC: 10mA £ IC £ 100mA , we havve
æ V - VBE ö
10mA £ b ç CC ÷ £ 100mA
è R1 + R2 ø
Potentiometer R2 can be adjusted from từ 0 đến full R2, and IC is max when R2 = 0. Since we can
select R1 as follows:
VCC - VBE
100mA = b or R1 = 10 b (VCC - VBE ) [W]
R1
Let VCC = 12V (a value > voltge rating of charging battery), we get R1 = 11.3 KW
In practice, we have to use standard resistors, therefore we select R1 = 12 KW (i.e. IC max s slightly
less than 100mA).
Value of R2
VCC - VBE
R2 = b - R1
10mA
After replacements, we get R2 = 101.7 KW
Nếu dùng điện trở chuẩn thì chọn biến trở 100K cho R2, khi đó IC min hơi lớn hơn 10mA!
Chú ý: Thực tế thì các pin NiCd như loại 9V được làm từ 8 pin nhỏ 1.2V, nghĩa là điện áp danh
định của nó là 9.6V. Khi pin được nạp đầy thì mỗi pin nhỏ có điện áp là 1.3V, dẫn đến điện áp nạp
đầy là 10.4V. Như vậy chỉ cần chọn VCC > 10.4V + VCEsat thì đạt yêu cầu!

SSED – Solved problems For Chapter 7 – page 4/6

In practice, we have to use standard resistors, therefore we select 100K potentiometer for R2 (i.e.
IC min is slightly larger than 10mA)
Note: In fact, the NICD batteries such as 9V types are made of 8 small 1.2V batteries, meaning its
nominal voltage is 9.6V. When the battery is filled, each small battery has a 1.3V voltage, leading
to a filling voltage of 10.4V. So just choose VCC > 10.4V + VCEsat is required!

7. Find the Q point (DC oprerating point) of BJT in Fig. 5. Given parameters: R1 = 100 KW; R2 = 50 KW;
RC = 5 KW; RE = 3 KW; VCC = 15 V; VBE(on) = 0.7 V, and β = 100.
Ans.
For convenience of calculations, we will transform the base circuit into the Thévenin equivalent
as follows:

whre VBB=VCCR2/(R1+R2) and RB = R1R2/(R1+R2).

Giả sử BJT ở miền tích cực thuận, nếu tính ra không đúng thì ta phải đổi lại giả thiết BJT ở miền
bão hòa và tính lại! Tại mạch nền-phát ta có phương trình sau:
Asuume BJT in forward active mode, if calculating incorrectly, we have to change the BJT
hypothesis in saturation mode and recalculate! At the base circuit, we have the following
equation:
VBB = IBRB + VBE + IERE = [RB + (β + 1)RE ]IB + VBE
Therefore the base current
VBB - VBE
IB =
RB + ( b + 1) RE
We get IC = βIB
At the collector circuit, we have:
VCC = ICRC + VCE + IERE = ICRC + VCE + (β + 1)ICRE/β
Therefore:
æ b +1 ö
VCE = VCC - I C ç RC + RE ÷
è b ø
If β >> 1 we have VCE = VCC - I C ( RC + RE )
Putting the values into the above equations, we get
VBB = 5V; RB = 33.3 KW; IB = 12.8 μA; IC = 1.28 mA; VCE = 4.78 V > VCEsat = 0.2V (sastifying the
assumption: BJT in forward active mode)
Thus, Q point of BJT:
VCEQ = 4.78 V ICQ = 1.28 mA and IBQ = 12.8 μA

8. Given a BJT circuit with VCC = 12V and b = 100, BJT is

operating with VBEQ = 0.7V, VCEQ = 6V, and ICQ=2mA.
a) What are values of RB and RC?
b) Using the value of RB from the above question, find the
value range of RC for BJT still in forward active mode?

SSED – Solved problems For Chapter 7 – page 5/6

Ans.
a) Find RB and RC:
From problem statement, we have
VBEQ = 0.7V > 0 Þ JE in forward bias, and
VBCQ = VBEQ – VCEQ = 0.7 – 6 < 0 Þ JC in reverse bias.
Thus BJT in forward active mode, we get:
IBQ = ICQ/b = (VCC – VBEQ)/RB
Þ RB = b(VCC – VBEQ)/ICQ = 100x(12–0.7)V/2mA = 565kW
And
RC = (VCC – VCEQ)/ICQ = (12 – 6) V/ 2mA = 3 kW

b)
Using the value of RB from a) and BJT still in forward active mode, we have
IC = 2mA and VCE > VCESAT = 0.2V.
Therefore:
VCC = RCIC + VCE
Þ VCE = VCC – RCIC > VCESAT = 0.2V
Þ RC < (VCC – VCESAT)/IC = (12 – 0.2)V/2mA = 5.9 kW
Thus, 0 £ RC < 5.9 kW

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