SiT8008B

Low Power Programmable Oscillator

ow Power, Standard Frequency Oscillator

Features Applications
 Any frequency between 1 MHz and 110 MHz accurate to  Ideal for DSC, DVC, DVR, IP CAM, Tablets, e-Books,
6 decimal places SSD, GPON, EPON, etc.
 100% pin-to-pin drop-in replacement to quartz-based XO  Ideal for high-speed serial protocols such as: USB,
 Excellent total frequency stability as low as ±20 ppm SATA, SAS, Firewire, 100M / 1G / 10G Ethernet, etc.
 Operating temperature from -40°C to 85°C. For 125°C and/
or -55°C options, refer to SiT1618, SiT8918, SiT8920
 Low power consumption of 3.5 mA typical at 1.8V
 Standby mode for longer battery life
 Fast startup time of 5 ms
 LVCMOS/HCMOS compatible output
 Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5,
5.0 x 3.2, 7.0 x 5.0 mm x mm
 Instant samples with Time Machine II and Field
Programmable Oscillators
 RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
 For AEC-Q100 oscillators, refer to SiT8924 and SiT8925

Electrical Characteristics
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise
stated. Typical values are at 25°C and nominal supply voltage.
Table 1. Electrical Characteristics
Parameters Symbol Min. Typ. Max. Unit Condition
Frequency Range
Output Frequency Range f 1 – 110 MHz
Frequency Stability and Aging
Frequency Stability F_stab -20 – +20 ppm Inclusive of initial tolerance at 25°C, 1st year aging at 25°C, and
variations over operating temperature, rated power supply voltage
-25 – +25 ppm
and load.
-50 – +50 ppm
Operating Temperature Range
Operating Temperature Range T_use -20 – +70 °C Extended Commercial
-40 – +85 °C Industrial
Supply Voltage and Current Consumption
Supply Voltage Vdd 1.62 1.8 1.98 V Contact SiTime for 1.5V support
2.25 2.5 2.75 V
2.52 2.8 3.08 V
2.7 3.0 3.3 V
2.97 3.3 3.63 V
2.25 – 3.63 V
Current Consumption Idd – 3.8 4.5 mA No load condition, f = 20 MHz, Vdd = 2.8V to 3.3V
– 3.7 4.2 mA No load condition, f = 20 MHz, Vdd = 2.5V
– 3.5 4.1 mA No load condition, f = 20 MHz, Vdd = 1.8V
OE Disable Current I_OD – – 4.2 mA Vdd = 2.5V to 3.3V, OE = GND, Output in high-Z state
– – 4.0 mA Vdd = 1.8V, OE = GND, Output in high-Z state
Standby Current I_std – 2.1 4.3 A ST
̅ ̅ ̅ = GND, Vdd = 2.8V to 3.3V, Output is weakly pulled down
– 1.1 2.5 A ST
̅ ̅ ̅ = GND, Vdd = 2.5V, Output is weakly pulled down
– 0.2 1.3 A ST
̅ ̅ ̅ = GND, Vdd = 1.8V, Output is weakly pulled down

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SiT8008B Low Power Programmable Oscillator

Table 1. Electrical Characteristics (continued)

Parameters Symbol Min. Typ. Max. Unit Condition
LVCMOS Output Characteristics
Duty Cycle DC 45 – 55 % All Vdds. See Duty Cycle definition in Figure 3 and Footnote 6
Rise/Fall Time Tr, Tf – 1 2 ns Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80%
– 1.3 2.5 ns Vdd =1.8V, 20% - 80%
– – 2 ns Vdd = 2.25V - 3.63V, 20% - 80%
Output High Voltage VOH 90% – – Vdd IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOH = -2 mA (Vdd = 1.8V)
Output Low Voltage VOL – – 10% Vdd IOL = 4 mA (Vdd = 3.0V or 3.3V)
IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOL = 2 mA (Vdd = 1.8V)
Input Characteristics
Input High Voltage VIH 70% – – Vdd Pin 1, OE or ST
̅ ̅̅
Input Low Voltage VIL – – 30% Vdd Pin 1, OE or ST
̅ ̅̅
Input Pull-up Impedance Z_in 50 87 150 k Pin 1, OE logic high or logic low, or ST
̅ ̅ ̅ logic high
2 – – M Pin 1, ST
̅ ̅ ̅ logic low
Startup and Resume Timing
Startup Time T_start – – 5 ms Measured from the time Vdd reaches its rated minimum value
Enable/Disable Time T_oe – – 130 ns f = 110 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles
Resume Time T_resume – – 5 ms Measured from the time ST
̅ ̅ ̅ pin crosses 50% threshold
Jitter
RMS Period Jitter T_jitt – 1.8 3 ps f = 75 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
– 1.8 3 ps f = 75 MHz, Vdd = 1.8V
Peak-to-peak Period Jitter T_pk – 12 25 ps f = 75 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
– 14 30 ps f = 75 MHz, Vdd = 1.8V
RMS Phase Jitter (random) T_phj – 0.5 0.9 ps f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz
– 1.3 2 ps f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz

Table 2. Pin Description

Pin Symbol Functionality Top View
[1]
H : specified frequency output
Output Enable
L: output is high impedance. Only output driver is disabled.
OE/ST/NC
H[1]: specified frequency output
1 ̅ ̅ ̅ /NC
OE/ST Standby L: output is low (weak pull down). Device goes to sleep mode. Supply
current reduces to I_std.
Any voltage between 0 and Vdd or Open[1]: Specified frequency
No Connect
output. Pin 1 has no function.
2 GND Power Electrical ground
3 OUT Output Oscillator output Figure 1. Pin Assignments
4 VDD Power Power supply voltage[2]

Notes:
1. In OE or ST
̅ ̅ ̅ mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option.
2. A capacitor of value 0.1 µF or higher between Vdd and GND is required.

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SiT8008B Low Power Programmable Oscillator

Table 3. Absolute Maximum Limits

Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance
of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter Min. Max. Unit
Storage Temperature -65 150 °C
Vdd -0.5 4 V
Electrostatic Discharge – 2000 V
Soldering Temperature
– 260 °C
(follow standard Pb free soldering guidelines)
[3]
Junction Temperature – 150 °C

Note:
3. Exceeding this temperature for extended period of time may damage the device.

Table 4. Thermal Consideration[4]

Package JA, 4 Layer Board JA, 2 Layer Board JC, Bottom
(°C/W) (°C/W) (°C/W)
7050 142 273 30
5032 97 199 24
3225 109 212 27
2520 117 222 26
2016 152 252 36

Note:
4. Refer to JESD51 for JA and JC definitions, and reference layout used to determine the JA and JC values in the above table.

Table 5. Maximum Operating Junction Temperature[5]

Max Operating Temperature (ambient) Maximum Operating Junction Temperature
70°C 80°C
85°C 95°C

Note:
5. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.

Table 6. Environmental Compliance

Parameter Condition/Test Method
Mechanical Shock MIL-STD-883F, Method 2002
Mechanical Vibration MIL-STD-883F, Method 2007
Temperature Cycle JESD22, Method A104
Solderability MIL-STD-883F, Method 2003
Moisture Sensitivity Level MSL1 @ 260°C

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SiT8008B Low Power Programmable Oscillator

Test Circuit and Waveform[6]

Vdd Vout
Test Point
tr tf

4 3
Power 80% Vdd
Supply 0.1 uF 15pF 50%
1 2 (including probe
and fixture 20% Vdd
capacitance) High Pulse
Low Pulse
(TH)
(TL)

Vdd Period
OE/ST Function 1 kΩ

Figure 2. Test Circuit Figure 3. Waveform

Note:
6. Duty Cycle is computed as Duty Cycle = TH/Period.

Timing Diagrams

Vdd Vdd
90% Vdd
50% Vdd
T_start [7] T_resume
Pin 4 Voltage No Glitch ST Voltage
during start up

CLK Output
CLK Output HZ
HZ

T_start: Time to start from power-off T_resume: Time to resume from ST

Figure 4. Startup Timing (OE/ ST

̅ ̅ ̅ Mode) Figure 5. Standby Resume Timing ( ST
̅ ̅ ̅ Mode Only)

Vdd Vdd
50% Vdd
OE Voltage
T_oe 50% Vdd
OE Voltage

T_oe
CLK Output CLK Output
HZ
HZ

T_oe: Time to re-enable the clock output T_oe: Time to put the output in High Z mode

Figure 6. OE Enable Timing (OE Mode Only) Figure 7. OE Disable Timing (OE Mode Only)

Note:
7. SiT8008 has “no runt” pulses and “no glitch” output during startup or resume.

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SiT8008B Low Power Programmable Oscillator

Performance Plots[8]
DUT1 DUT2 DUT3 DUT4 DUT5
1.8 2.5 2.8 3.0 3.3
DUT6 DUT7 DUT8 DUT9 DUT10
6.0
20

5.5 15

Frequency (ppm)
10
5.0
5
Idd (mA)

4.5 0

-5
4.0
-10

3.5 -15

-20
3.0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80
0 10 20 30 40 50 60 70 80 90 100 110

Frequency (MHz) Temperature (°C)

Figure 8. Idd vs Frequency Figure 9. Frequency vs Temperature

1.8 V 2.5 V 2.8 V 3.0 V 3.3 V 1.8 V 2.5 V 2.8 V 3.0 V 3.3 V

55

54
RMS period jitter (ps)

53

52
(

51
ty cyc

50

49

48

47

46

45
0 10 20 30 40 50 60 70 80 90 100 110
Frequency (MHz) Frequency (MHz)

Figure 10. RMS Period Jitter vs Frequency Figure 11. Duty Cycle vs Frequency

Temperature (°C) Temperature (°C)

Figure 12. 20%-80% Rise Time vs Temperature Figure 13. 20%-80% Fall Time vs Temperature

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SiT8008B Low Power Programmable Oscillator

Performance Plots[8]
1.8 V 2.5 V 2.8 V 3.0 V 3.3 V

0.9

0.8

0.7

IPJ (ps)
0.6

0.5

0.4
10 30 50 70 90 110 10 30 50 70 90 110

Frequency (MHz) Frequency (MHz)

Figure 14. RMS Integrated Phase Jitter Random Figure 15. RMS Integrated Phase Jitter Random
(12 kHz to 20 MHz) vs Frequency[9] (900 kHz to 20 MHz) vs Frequency[9]

Notes:
8. All plots are measured with 15 pF load at room temperature, unless otherwise stated.
9. Phase noise plots are measured with Agilent E5052B signal source analyzer. Integration range is up to 5 MHz for carrier frequencies below 40 MHz.

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SiT8008B Low Power Programmable Oscillator

Programmable Drive Strength The SiT8008 can support up to 60 pF or higher in

maximum capacitive loads with drive strength settings.
The SiT8008 includes a programmable drive strength Refer to the Rise/Fall Time Tables (Table 7 to 11) to
feature to provide a simple, flexible tool to optimize the determine the proper drive strength for the desired
clock rise/fall time for specific applications. Benefits from combination of output load vs. rise/fall time.
the programmable drive strength feature are:
SiT8008 Drive Strength Selection
 Improves system radiated electromagnetic interference
(EMI) by slowing down the clock rise/fall time. Tables 7 through 11 define the rise/fall time for a given
capacitive load and supply voltage.
 Improves the downstream clock receiver’s (RX) jitter by
decreasing (speeding up) the clock rise/fall time. 1. Select the table that matches the SiT8008 nominal
supply voltage (1.8V, 2.5V, 2.8V, 3.0V, 3.3V).
 Ability to drive large capacitive loads while maintaining
full swing with sharp edge rates. 2. Select the capacitive load column that matches
the application requirement (5 pF to 60 pF)
For more detailed information about rise/fall time control
and drive strength selection, see the SiTime Application 3. Under the capacitive load column, select the
Notes section. desired rise/fall times.
4. The left-most column represents the part number
EMI Reduction by Slowing Rise/Fall Time code for the corresponding drive strength.
Figure 16 shows the harmonic power reduction as the
5. Add the drive strength code to the part number for
rise/fall times are increased (slowed down). The rise/fall
ordering purposes.
times are expressed as a ratio of the clock period. For the
ratio of 0.05, the signal is very close to a square wave. For
the ratio of 0.45, the rise/fall times are very close to near- Calculating Maximum Frequency
triangular waveform. These results, for example, show that Any given rise/fall time in Table 7 through 11 dictates the
the 11th clock harmonic can be reduced by 35 dB if the maximum frequency under which the oscillator can operate
rise/fall edge is increased from 5% of the period to 45% of with guaranteed full output swing over the entire operating
the period. temperature range. This max frequency can be calculated
trise=0.05 as the following:
trise=0.1
10 trise=0.15

0
trise=0.2
trise=0.25
1
trise=0.3 Max Frequency =
-10 trise=0.35 5 x Trf_20/80
Harmonic amplitude (dB)

trise=0.4
-20 trise=0.45

-30 where Trf_20/80 is the typical value for 20%-80% rise/fall time.
-40

-50 Example 1
-60
Calculate fMAX for the following condition:
-70

-80
 Vdd = 1.8V (Table 7)
1 3 5 7 9 11
Harmonic number  Capacitive Load: 30 pF
Figure 16. Harmonic EMI reduction as a Function  Desired Tr/f time = 3 ns
of Slower Rise/Fall Time (rise/fall time part number code = E)
 fMAX = 66.666660
Jitter Reduction with Faster Rise/Fall Time
Power supply noise can be a source of jitter for the down- Part number for the above example:
stream chipset. One way to reduce this jitter is to speed up
the rise/fall time of the input clock. Some chipsets may also SiT8008IE12-18E-66.666660
require faster rise/fall time in order to reduce their sensitivity
to this type of jitter. Refer to the Rise/Fall Time Tables
(Table 7 to Table 11) to determine the proper drive strength.
Drive strength code is inserted here. Default setting is “-”
High Output Load Capability
The rise/fall time of the input clock varies as a function of
the actual capacitive load the clock drives. At any given
drive strength, the rise/fall time becomes slower as the
output load increases. As an example, for a 3.3V SiT8008
device with default drive strength setting, the typical rise/fall
time is 1 ns for 15 pF output load. The typical rise/fall time
slows down to 2.6 ns when the output load increases to 45 pF.
One can choose to speed up the rise/fall time to 1.83 ns by
then increasing the drive strength setting on the SiT8008.

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SiT8008B Low Power Programmable Oscillator

Rise/Fall Time (20% to 80%) vs CLOAD Tables

Table 7. Vdd = 1.8V Rise/Fall Times Table 8. Vdd = 2.5V Rise/Fall Times
for Specific CLOAD for Specific CLOAD

Rise/Fall Time Typ (ns) Rise/Fall Time Typ (ns)

Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF
L 6.16 11.61 22.00 31.27 39.91 L 4.13 8.25 12.82 21.45 27.79
A 3.19 6.35 11.00 16.01 21.52 A 2.11 4.27 7.64 11.20 14.49
R 2.11 4.31 7.65 10.77 14.47 R 1.45 2.81 5.16 7.65 9.88
B 1.65 3.23 5.79 8.18 11.08 B 1.09 2.20 3.88 5.86 7.57
T 0.93 1.91 3.32 4.66 6.48 T 0.62 1.28 2.27 3.51 4.45
E 0.78 1.66 2.94 4.09 5.74 E or "‐": default 0.54 1.00 2.01 3.10 4.01
U 0.70 1.48 2.64 3.68 5.09 U 0.43 0.96 1.81 2.79 3.65
F or "‐": default 0.65 1.30 2.40 3.35 4.56 F 0.34 0.88 1.64 2.54 3.32

Table 9. Vdd = 2.8V Rise/Fall Times Table 10. Vdd = 3.0V Rise/Fall Times
for Specific CLOAD for Specific CLOAD
Rise/Fall Time Typ (ns) Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF
L 3.77 7.54 12.28 19.57 25.27 L 3.60 7.21 11.97 18.74 24.30
A 1.94 3.90 7.03 10.24 13.34 A 1.84 3.71 6.72 9.86 12.68
R 1.29 2.57 4.72 7.01 9.06 R 1.22 2.46 4.54 6.76 8.62
B 0.97 2.00 3.54 5.43 6.93 B 0.89 1.92 3.39 5.20 6.64
T 0.55 1.12 2.08 3.22 4.08 T or "‐": default 0.51 1.00 1.97 3.07 3.90
E or "‐": default 0.44 1.00 1.83 2.82 3.67 E 0.38 0.92 1.72 2.71 3.51
U 0.34 0.88 1.64 2.52 3.30 U 0.30 0.83 1.55 2.40 3.13
F 0.29 0.81 1.48 2.29 2.99 F 0.27 0.76 1.39 2.16 2.85

Table 11. Vdd = 3.3V Rise/Fall Times

for Specific CLOAD
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF
L 3.39 6.88 11.63 17.56 23.59
A 1.74 3.50 6.38 8.98 12.19
R 1.16 2.33 4.29 6.04 8.34
B 0.81 1.82 3.22 4.52 6.33
T or "‐": default 0.46 1.00 1.86 2.60 3.84
E 0.33 0.87 1.64 2.30 3.35
U 0.28 0.79 1.46 2.05 2.93
F 0.25 0.72 1.31 1.83 2.61

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SiT8008B Low Power Programmable Oscillator

Pin 1 Configuration Options (OE, ST

̅ ̅ ̅ , or NC)
Pin 1 of the SiT8008 can be factory-programmed to support
three modes: Output Enable (OE), Standby (ST ̅ ̅ ̅ ) or
No Connect (NC). These modes can also be programmed
with the Time Machine using field programmable devices.
Output Enable (OE) Mode
In the OE mode, applying logic Low to the OE pin only
disables the output driver and puts it in Hi-Z mode. The
core of the device continues to operate normally. Power
consumption is reduced due to the inactivity of the output.
When the OE pin is pulled High, the output is typically Figure 18. Startup Waveform vs. Vdd
enabled in <1 µs. (Zoomed-in View of Figure 17)
̅ ̅ ̅ ) Mode
Standby (ST
Instant Samples with Time Machine and
In the ST̅ ̅ ̅ mode, a device enters into the standby mode Field Programmable Oscillators
when Pin 1 pulled Low. All internal circuits of the device are
turned off. The current is reduced to a standby current, SiTime supports a field programmable version of the SiT8008
typically in the range of a few µA. When ST ̅ ̅ ̅ is pulled High, low power oscillator for fast prototyping and real time
the device goes through the “resume” process, which can customization of features. The field programmable devices
take up to 5 ms. (FP devices) are available for all five standard SiT8008
package sizes and can be configured to one’s exact
No Connect (NC) Mode specification using the Time Machine II, an USB powered
In the NC mode, the device always operates in its normal MEMS oscillator programmer.
mode and outputs the specified frequency regardless of the Customizable Features of the SiT8008 FP Devices Include
logic level on pin 1.
Table 12 below summarizes the key relevant parameters  Frequency between 1 MHz to 110 MHz
in the operation of the device in OE, ST
̅ ̅ ̅ , or NC mode.  Three frequency stability options,
±20 ppm, ±25 ppm, ±50 ppm
Table 12. OE vs. ST
̅ ̅ ̅ vs. NC
 Two operating temperatures, -20 to 70°C or
OE ST
̅ ̅̅ NC -40 to 85°C
Active current 20 MHz (max, 1.8V) 4.1 mA 4.1 mA 4.1 mA
 Six supply voltage options, 1.8V, 2.5V, 2.8V, 3.0V,
OE disable current (max. 1.8V) 4 mA N/A N/A 3.3V and 2.25 to 3.63V continuous
Standby current (typical 1.8V) N/A 0.6 µA N/A
 Output drive strength
OE enable time at 77.76 MHz (max) 138 ns N/A N/A
 OE, ST
̅ ̅ ̅ or NC mode
Resume time from standby
(max, all frequency) N/A 5 ms N/A
For more information regarding SiTime’s field programmable
Output driver in OE disable/standby weak solutions, see Time Machine II and Field Programmable
High Z N/A
mode pull-down
Oscillators.
Output on Startup and Resume SiT8008 is typically factory-programmed per customer
The SiT8008 comes with gated output. Its clock output is ordering codes for volume delivery.
accurate to the rated frequency stability within the first pulse
from initial device startup or resume from the standby mode.
In addition, the SiT8008 features “no runt” pulses and “no
glitch” output during startup or resume as shown in the
waveform captures in Figure 17 and Figure 18.

Figure 17. Startup Waveform vs. Vdd

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SiT8008B Low Power Programmable Oscillator

Dimensions and Patterns

[10] [11]
Package Size – Dimensions (Unit: mm) Recommended Land Pattern (Unit: mm)

2.0 x 1.6 x 0.75 mm

2.5 x 2.0 x 0.75 mm

2.5 ± 0.05 1.9

1.00
#4 #3 #3 #4
2.0 ± 0.05
1.1

1.5
YXXXX
0.5

#1 #2 #2 #1

1.0
0.75

1.1
0.75 ± 0.05

3.2 x 2.5 x 0.75 mm

3.2 ± 0.05 2.1 2.2

#4 #3 #3 #4
2.5 ± 0.05
0.9

1.9

YXXXX
0.7

1.2

#1 #2 #2 #1

0.9
1.4
0.75 ± 0.05

5.0 x 3.2 x 0.75 mm

2.54
5.0 ± 0.05 2.39
#4 #3 #3 #4
0.8
3.2 ± 0.05

2.2

YXXXX
1.1

1.6

#1 #2 #2 #1

1.15
0.75 ± 0.05 1.5

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SiT8008B Low Power Programmable Oscillator

Dimensions and Patterns

[10] [11]
Package Size – Dimensions (Unit: mm) Recommended Land Pattern (Unit: mm)

7.0 x 5.0 x 0.90 mm

7.0 ± 0.05 5.08 5.08

5.0 ± 0.05

2.6

3.81
YXXXX

1.1

2.0
1.4
2.2
0.90 ± 0.10

Notes:
10. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the as sembly location of
the device.
11. A capacitor of value 0.1 µF or higher between Vdd and GND is required.

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SiT8008B Low Power Programmable Oscillator

Ordering Information
The Part No. Guide is for reference only. To customize and build an exact part number, use the SiTime
Part Number Generator.

SiT8008BC-12-18E- 66.666660D
Packing Method

Revision Letter

Temperature Range
al, -20ºC to

Supply Voltage

Package Size

Frequency Stability

Table 13. Ordering Codes for Supported Tape & Reel Packing Method
Device Size 16 mm T&R (3ku) 16 mm T&R (1ku) 12 mm T&R (3ku) 12 mm T&R (1ku) 8 mm T&R (3ku) 8 mm T&R (1ku)
(mm x mm)
2.0 x 1.6 – – – – D E
2.5 x 2.0 – – – – D E
3.2 x 2.5 – – – – D E
5.0 x 3.2 – – T Y – –
7.0 x 5.0 T Y – – – –

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SiT8008B Low Power Programmable Oscillator

Table 14. Additional Information

Document Description Download Link
Time Machine II MEMS oscillator programmer http://www.sitime.com/support/time-machine-oscillator-programmer
Field Programmable Devices that can be programmable in the field by
http://www.sitime.com/products/field-programmable-oscillators
Oscillators Time Machine II
Tape & Reel dimension, reflow profile and other
Manufacturing Notes http://www.sitime.com/manufacturing-notes
manufacturing related info
Qualification Reports RoHS report, reliability reports, composition reports http://www.sitime.com/support/quality-and-reliability
Additional performance data such as phase noise,
Performance Reports http://www.sitime.com/support/performance-measurement-report
current consumption and jitter for selected frequencies
Termination Techniques Termination design recommendations http://www.sitime.com/support/application-notes

Layout Techniques Layout recommendations http://www.sitime.com/support/application-notes

Table 15. Revision History

Revision Release Date Change Summary
1.0 06/10/2014 First Production Release
1.01 05/07/2015 Revised the Electrical Characteristics, Timing Diagrams and Performance Plots
Revised 2016 package diagram
1.02 06/18/2015 Added 16 mm T&R information to Table 13
Revised 12 mm T&R information to Table 13
1.03 08/30/2016 Revised part number example in the ordering information
1.04 01/30/2018 Updated logo and company address, other page layout changes
Revised 2520 package land pattern

SiTime Corporation, 5451 Patrick Henry Drive, Santa Clara, CA 95054, USA | Phone: +1-408-328-4400 | Fax: +1-408-328-4439

© SiTime Corporation 2014-2018. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability f or any loss, damage
or defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect
or accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or
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Silicon MEMS Outperforms Quartz

Supplemental Information

The Supplemental Information section is not part of the datasheet and is for informational purposes only.

Rev 1.04 Page 14 of 17 www.sitime.com

Silicon MEMS Outperforms Quartz

Best Reliability Best Electro Magnetic Susceptibility (EMS)

Silicon is inherently more reliable than quartz. Unlike SiTime’s oscillators in plastic packages are up to 54 times
quartz suppliers, SiTime has in-house MEMS and analog more immune to external electromagnetic fields than
CMOS expertise, which allows SiTime to develop the quartz oscillators as shown in Figure 3.
most reliable products. Figure 1 shows a comparison
with quartz technology. Why is SiTime Best in Class:
 Internal differential architecture for best common
Why is SiTime Best in Class: mode noise rejection
 SiTime’s MEMS resonators are vacuum sealed
using an advanced EpiSeal™ process, which  Electrostatically driven MEMS resonator is more
eliminates foreign particles and improves long immune to EMS
term aging and reliability
 World-class MEMS and CMOS design expertise

Reliability (Million Hours)

SiTime 1,140

IDT 38

KYCA EPSN TXC CW SLAB SiTime

EPSN 28
[3]
Figure 3. Electro Magnetic Susceptibility (EMS)

[1] Best Power Supply Noise Rejection

Figure 1. Reliability Comparison
SiTime’s MEMS oscillators are more resilient against noise
Best Aging on the power supply. A comparison is shown in Figure 4.

Unlike quartz, MEMS oscillators have excellent long Why is SiTime Best in Class:
term aging performance which is why every new SiTime  On-chip regulators and internal differential
product specifies 10-year aging. A comparison is shown architecture for common mode noise rejection
in Figure 2.
 MEMS resonator is paired with advanced analog
Why is SiTime Best in Class:
CMOS IC
 SiTime’s MEMS resonators are vacuum sealed
using an advanced EpiSeal™ process, which
SiTime EPSN KYCA
eliminates foreign particles and improves long
term aging and reliability
 Inherently better immunity of electrostatically
driven MEMS resonator

MEMS vs. Quartz Aging

SiTimeMEMS
EpiSeal Oscillator
Oscillator QuartzOscillator
Quartz Oscillator
10

8
8
Aging (
PPM)

4 3.5 [4]
3 Figure 4. Power Supply Noise Rejection
2 1.5

0
1-Year 10-Year

[2]
Figure 2. Aging Comparison

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Silicon MEMS Outperforms Quartz

Best Vibration Robustness Best Shock Robustness

High-vibration environments are all around us. All electronics, SiTime’s oscillators can withstand at least 50,000 g shock.
from handheld devices to enterprise servers and storage They all maintain their electrical performance in operation
systems are subject to vibration. Figure 5 shows a during shock events. A comparison with quartz devices is
comparison of vibration robustness. shown in Figure 6.
Why is SiTime Best in Class: Why is SiTime Best in Class:
 The moving mass of SiTime’s MEMS resonators  The moving mass of SiTime’s MEMS resonators
is up to 3000 times smaller than quartz is up to 3000 times smaller than quartz
 Center-anchored MEMS resonator is the most  Center-anchored MEMS resonator is the most
robust design robust design

TXC
TXC EPS CW KYCA
KYCA SLAB EpiSeal
SiTime MEMS
100.0
Vibration Sensitivity (ppb/g)

10.0

1.0

0.1

0.0
10 100 1000
Vibration Frequency (Hz) KYCA EPSN TXC CW SLAB SiTime

[5] [6]
Figure 5. Vibration Robustness Figure 6. Shock Robustness

Figure labels:
 TXC = TXC
 Epson = EPSN
 Connor Winfield = CW
 Kyocera = KYCA
 SiLabs = SLAB
 SiTime = EpiSeal MEMS

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Silicon MEMS Outperforms Quartz

Notes:
1. Data source: Reliability documents of named companies.
2. Data source: SiTime and quartz oscillator devices datasheets.
3. Test conditions for Electro Magnetic Susceptibility (EMS):
 According to IEC EN61000-4.3 (Electromagnetic compatibility standard)
 Field strength: 3V/m
 Radiated signal modulation: AM 1 kHz at 80% depth
 Carrier frequency scan: 80 MHz – 1 GHz in 1% steps
 Antenna polarization: Vertical
 DUT position: Center aligned to antenna
Devices used in this test:

Label Manufacturer Part Number Technology

EpiSeal MEMS SiTime SiT9120AC-1D2-33E156.250000 MEMS + PLL
EPSN Epson EG-2102CA156.2500M-PHPAL3 Quartz, SAW
rd
TXC TXC BB-156.250MBE-T Quartz, 3 Overtone
CW Conner Winfield P123-156.25M Quartz, 3rd Overtone
KYCA AVX Kyocera KC7050T156.250P30E00 Quartz, SAW
SLAB SiLab 590AB-BDG Quartz, 3rd Overtone + PLL

4. 50 mV pk-pk Sinusoidal voltage.

Devices used in this test:

Label Manufacturer Part Number Technology

EpiSeal MEMS SiTime SiT8208AI-33-33E-25.000000 MEMS + PLL
NDK NDK NZ2523SB-25.6M Quartz
KYCA AVX Kyocera KC2016B25M0C1GE00 Quartz
EPSN Epson SG-310SCF-25M0-MB3 Quartz
5. Devices used in this test:
same as EMS test stated in Note 3.
6. Test conditions for shock test:
 MIL-STD-883F Method 2002
 Condition A: half sine wave shock pulse, 500-g, 1ms
 Continuous frequency measurement in 100 μs gate time for 10 seconds
Devices used in this test:
same as EMS test stated in Note 3.
7. Additional data, including setup and detailed results, is available upon request to qualified customer. Please contact [email protected].

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