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    'Jzis - Su: Silicon PNP Darlington Power Transistor

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    Pușcă Martin
    The document describes a silicon PNP Darlington power transistor. It provides key electrical characteristics and ratings including a collector-emitter sustaining voltage of -80V minimum, a DC current gain of 750 minimum at -3A collector current, and a collector saturation voltage of 2.5V maximum at -3A collector current.

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    © All Rights Reserved
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    'Jzis - Su: Silicon PNP Darlington Power Transistor

    Uploaded by

    Pușcă Martin
    38 views2 pages
    The document describes a silicon PNP Darlington power transistor. It provides key electrical characteristics and ratings including a collector-emitter sustaining voltage of -80V minimum, a DC current gain of 750 minimum at -3A collector current, and a collector saturation voltage of 2.5V maximum at -3A collector current.

    Original Title

    BDX34B Datasheet

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    The document describes a silicon PNP Darlington power transistor. It provides key electrical characteristics and ratings including a collector-emitter sustaining voltage of -80V minimum, a DC current gain of 750 minimum at -3A collector current, and a collector saturation voltage of 2.5V maximum at -3A collector current.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    38 views2 pages

    'Jzis - Su: Silicon PNP Darlington Power Transistor

    Uploaded by

    Pușcă Martin
    The document describes a silicon PNP Darlington power transistor. It provides key electrical characteristics and ratings including a collector-emitter sustaining voltage of -80V minimum, a DC current gain of 750 minimum at -3A collector current, and a collector saturation voltage of 2.5V maximum at -3A collector current.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    'Jzis.

    su , One,
    20 STERN AVE. TELEPHONE: (973) 376-2922
    SPRINGFIELD, NEW JERSEY 07081 (212)227-6005
    U.S.A. FAX: (973) 376-8960

    Silicon PNP Darlington Power Transistor BDX34B

    DESCRIPTION
    • Collector-Emitter Sustaining Voltage-
    : VCEO(sus)= -80V(Min)
    • High DC Current Gain ;

    : hFE= 750(Min) @lc= -3A


    • Low Collector Saturation Voltage
    1 ./«">.
    r
    : VCE(sa.r -2.5V(Max.)@ lc= -3A ~* 4
    • Complement to Type BDX33B
    ™
    APPLICATIONS i1 'i PIN 1.BASE
    2. COLLECTOR
    • Designed for general purpose amplifier and low speed 1 2 2
    3. EMITTER

    switching applications. TO-220C package

    ABSOLUTE MAXIMUM RATINGS(Ta=25C) , B "


    , •* V >-j_x-- c ~*
    SYMBOL PARAMETER VALUE UNIT
    *JPj
    T-Oc
    >

    A"*"
    VCBO Collector-Base Voltage -80 V
    t>

    VCEO Collector-Emitter Voltage -80 V » 1


    * . r j "ll*~ L
    Sod'' •
    \» t

    VESO Emitter-Base Voltage -5 V K

    Collector Current-Continuous -10 A T i


    Ic
    H G •*--

    Collector Current-Peak -15 A I


    ICM
    c ( 1
    1
    IB Base Current-Continuous -0.25 A
    mm
    DIW WIN MAX
    Collector Power Dissipation A 15.70 15.90
    PC 70 W
    @ TC=25°C B 9.90 10.10
    C 4.20 4.40
    Tj Junction Temperature 150 'C D 0.70 0.90
    F 3.40 3.60
    G 4.98 5.18
    Tstg Storage Temperature Range -65-150 •c H 2.70 2.90
    J 0.44 0.46
    K 13.20 13.40
    L 1.10 1.30
    THERMAL CHARACTERISTICS 2.90
    Q 2.70
    R 2.50 2.70
    SYMBOL PARAMETER MAX UNIT
    S 1.29 1.31
    u 6.45 6.65
    Rth j-c Thermal Resistance, Junction to Case 1.78 •c/w V 8.66 8.86

    Quality Semi-Conductors
    Silicon PNP Darlington Power Transistor BDX34B

    ELECTRICAL CHARACTERISTICS
    TC=25°C unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP, MAX UNIT

    VcEO(SUS) Collector-Emitter Sustaining Voltage lc=-100mA;l B =0 -80 V

    VcE(sat) Collector-Emitter Saturation Voltage |c= -3A; |B= -6mA -2.5 V

    VsE(on) Base-Emitter On Voltage |c= -3A; VCE= -3V -2.5 V

    ICBO Collector Cutoff Current VGB= -80V; IE= 0 -0.2 mA

    ICEO Collector Cutoff Current VCE= -40V; IB= 0 -0.5 mA

    IEBO Emitter Cutoff Current VEB= -5V; lc= 0 -10 mA

    PFE DC Current Gain lc= -3A; VCE= -3V 750

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