C 6144 Datasheet
C 6144 Datasheet
SANYO Semiconductors
DATA SHEET
Features
• Adoption of MBIT process
• Large current capacitance (IC=10A)
• Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.))
• High-speed switching (tf=25ns(typ.))
Specifications
Absolute Maximum Ratings at Ta=25°C
6.68
2
15.87
A
15.8
3.23
1
C6144
2.76 SG LOT No.
3
12.98
1.47 MAX
0.8 DETAIL-A
(0.84)
1 2 3
0.5 1 : Base
FRAME
2 : Collector
EMC
3 : Emitter
( 1.0)
http://semicon.sanyo.com/en/network
72110FA TK IM TC-00002381 No. A1800-1/4
2SC6144SG
Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=40V, IE=0A 10 μA
Emitter Cutoff Current IEBO VEB=4V, IC=0A 10 μA
DC Current Gain hFE VCE=2V, IC=270mA 200 560
Gain-Bandwidth Product fT VCE=10V, IC=3A 330 MHz
Output Capacitance Cob VCB=10V, f=1MHz 60 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=6A, IB=300mA 180 360 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=6A, IB=300mA 1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=100μA, IE=0A 60 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞ 50 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=100μA, IC=0A 5 V
Turn-On Time ton See specified Test Circuit. 62 ns
Storage Time tstg See specified Test Circuit. 350 ns
Fall Time tf See specified Test Circuit. 25 ns
INPUT VR RB
RL
50Ω + +
100μF 470μF
IC=20IB1= --20IB2=5A
IC -- VCE IC -- VCE
10 5.0
35mA
A
40mA 35mA
A
mA
18m A 14mA
mA
mA 30mA
100m
9 60 40mA 4.5
25
1 m
6 12mA
80
8
25mA 4.0
Collector Current, IC -- A
Collector Current, IC -- A
10mA
20mA A
7
45mA
3.5 20m
6 3.0 8mA
A
50mA 15mA 30m
5 2.5
6mA
4 10mA 2.0
4mA
3 1.5
2
5mA 1.0 2mA
1 0.5
0
IB=0mA 0
IB=0mA
0 1 2 3 4 5 0 0.5 1.0 1.5 2.0
Collector-to-Emitter Voltage, VCE -- V IT13454 Collector-to-Emitter Voltage, VCE -- V IT13455
IC -- VBE hFE -- IC
25 7
VCE=2V VCE=2V
5
20 Ta=75°C
Collector Current, IC -- A
3
DC Current Gain, hFE
25°C
15 2
--25°C
10 100
7
°C
C
5°
C --25
5
=7
5
Ta
25°
0 3
0 0.5 1.0 1.5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5
Base-to-Emitter Voltage, VBE -- V IT13456 Collector Current, IC -- A IT13457
No. A1800-2/4
2SC6144SG
hFE -- IC fT -- IC
5 7
Ta=25°C VCE=10V
5
V CE
DC Current Gain, hFE
0. 2
2 2V
=2.
0.5
0V
V
100
0.7V
100
5
1.0V
7
3
5
2
3 10
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
Collector Current, IC -- A IT13458 Collector Current, IC -- A IT13459
Cob -- VCB VCE(sat) -- IC
5 1.0
f=1MHz IC / IB=20
7
5
3
2
2
Collector-to-Emitter 0.1
100 7
5 °C
7 =75
°C
3 Ta
25
5
C
2
5°
--2
3 0.01
7
2 5
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5
Collector-to-Base Voltage, VCB -- V IT13460 Collector Current, IC -- A IT13461
VCE(sat) -- IC VBE(sat) -- IC
1.0 3
IC / IB=50 IC / IB=20
7
5 2
Saturation Voltage, VCE(sat) -- V
2
1.0
Collector-to-Emitter
7 25°C
C C
5° 5°
5 =7 --2 5 75°C
Ta
3
°C
25
2 3
0.01 2
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
Collector Current, IC -- A IT13462 Collector Current, IC -- A IT13463
Forward Bias A S O PC -- Tc
3 30
2 ICP=13A
10
IC=10A 25
1m
7
Collector Dissipation, PC -- W
10
5 0m
PT
s
Collector Current, IC -- A
s
=5
3
00
2 20
1s
μs
10
1.0 P
ms
DC
7 T≤
15 1s
5
op
era
3
t ion
2 10
0.1
7
5
5
3
2 Tc=25°C
Single pulse
0.01 0
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 0 20 40 60 80 100 120 140 160
Collector-to-Emitter Voltage, VCE -- V IT15775 Case Temperature, Tc -- °C IT15774
No. A1800-3/4
2SC6144SG
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PS No. A1800-4/4