Protecting ADC with TVS

Diode
TI Precision Labs – ADCs

Presented by Alex Smith

Prepared by Dale Li

1
Back-to-Back Zener Diode on ADC Input
ADS8588S Input Stage: 5V 3.3V
I-V Curve for Input Clamp
AVDD DVDD
RFB
Input Clamp
Protection 2.5V
Buffer
Reference

AIN_nP 1MΩ

±10V Linear 3rd-Order ADC

16-Bit
±10V PGA LPF Driver
SAR
Input Range 1MΩ
ADC

AIN_nGND

RFB

AGND DGND

Absolute Maximum Ratings MIN MAX UNIT

Analog input voltage to
-15 +15 V
AGND
Input current -10 +10 mA
2
Solution 1: Protection with Internal Back-to-Back Zener Diode
HV Sinewave Input Signal Clamped:
+18V
Internal diode is turned on. +5V +3.3V

Vin
ADS8588S 2.5V
-18V Vdrop Input Clamp
Reference
Buffer

Vref AVDD DVDD

Protction
+25V-
1M

ADS8588S Abs Maximum Ratings: AINP

+ Vg
Rlit (3k ) RSH
Parameter Min Max Unit ADC
Cflt(1nF) PGA LPF -
+40V Driver
S1 Comp
N-Bit
Register
Vin_Abs -15 +15 V 1M
CSH +

Iin_Abs -10 +10 mA Rlit (3k ) AINM N-Bit

CDAC
AGND DGND
Select Rflt (±40V EOS):

40𝑉 − 15𝑉
𝑅𝑓𝑙𝑡 ≥ ≥ 2.5 kΩ
10𝑚𝐴
Select Rflt = 3kΩ in this example. • A simple resister in series with input limits the current to ADC.
3
Back-to-Back Zener diode Protection on Device – Hardware Performance
(Rflt=3kΩ, Cflt=1nF, ADS8588S at 200ksps maximum sampling rate)
Performance without external diode
Measured on ADS8588SEVM (200ksps):
Parameter Min Typ Max Unit
SNR 91 92 dB
THD -110 -95 dB

Measured with 3kΩ Rfilt:

SNR = 92.2dB
THD = - 109.7dB
(Tested on ADS8588SEVM)

4
THD vs Source Impedance (Rflt+Rg) with ADS8588S
• Nonlinear capacitance associated with
input clamp on device causes the
degradation with external resistors.
• The larger value resistor(Rflt):
 Smaller current to ADC.
 Small package size and less Power
dissipation.
 Less risk for continuous EOS.

But can lead to worse THD:

 3kΩ -> -109.7dB THD
 15kΩ -> -98.9dB THD
 24.9kΩ -> -95.1dB THD
(ADS8588S-200ksps EVM board with 1kHz sinewave input).

Note: Continuously turning on internal diode

Source: ADS8588S Datasheet.
may affect device’s lifetime.
5
Wrong Protection for ADC with SCR-Based Input
+5V +3.3V
EOS signal
will trigger SCR - Based
RFB
4.096V
SCR On ESD Protection
AVDD Reference
Buffer

Rfit (larger value) AIN_nP 1M

+ Vg AVDD 16-Bit
ADC
Cflt PGA LPF SAR
Normal Signal Driver
ADC
1M

Rfit (larger value) AIN_nGND

RFB ADS8688
VB ADS8681

AGND DGND

• Do not use this solution because an EOS signal may trigger a Latch-up.
• An external diode is needed to protect the ADC.
6
Solution 2: External TVS Diode Protection
+5V +3.3V

VC Vin_Abs
2.5V
Vdrop (±15V, or ±20V,) Reference Buffer
(+12V)
Input Clamp Vref AVDD DVDD
+ 28V - Protection
Rp Rflt 1MΩ

AINP
+ Vg
RSH
TVS
±10V PGA
ADC
+40V Cflt LPF Driver - N-Bit
Linear Range S1 Comp
CSH Register
Rflt AINM +
1MΩ

N-Bit
CDAC
AGND DGND

External diodes are turned on

for overdriven EOS signal.
SCR or Back to back Zener
Clamp not turned on!
7
TVS Diode V-I Curve
Set VR ≥ Vin Maximum voltage of normal input signal
Note: leakage current IR is specified at VR
I
Symbol Parameter
VBR Breakdown voltage
Bidirectional VR Stand-off voltage Abs Max Limit
TVS VC Clamping voltage IBR
VF Forward voltage drop VC VBR VR
IBR Breakdown Current @ VBR
IR V
IR Reverse Leakage @ VR
IR
VR VBR
IF Forward Current @ VF IBR
IPP Peak Pulse current @ VC Linear input
range
IPP
8
Set VR and VBR to select TVS diode
Set VR ≥ Vin Maximum voltage of normal input signal.
Set VBR < Vin_Abs Absolute maximum input range of ADC.
ADS8588S Data Sheet
Absolute Maximum Ratings
Parameter MIN TYP MAX UNIT

Analog Input to AGND ( Vin_Abs) -15 +15 V

Normal Input Signal (Range Pin=1, TA = –40°C to +125°C)
AIN_nP Signal ( Vin ) -10 +10 V

TVS Diode Specifications

Reverse Breakdown Clamping Reverse Breakdown Peak pulse Peak Power
Part Number MFG Standoff Voltage (VBR) Voltage Leakage Current Current Dissipation
Voltage(VR) Min Max Max (VC) (IR@VR) (IBR@VBR) (IPP) (PPP)

SMCJ10CA Bourns 10V 11.1 12.3 17V 5uA 1mA 88.3A 1500W
9
Choose Rp to limit power in Rp and TVS
Breakdown Clamping Steady State
Reverse Reverse Breakdown Peak pulse Peak Power
Part Voltage (VBR) Voltage Power
MFG Standoff Leakage Current Current Dissipation
Number Max Dissipation
Voltage(VR) Min Max Max (IR@VR) (IBR@VBR) (IPP) (PPP)
(VC@IPP) (PPP)

SMCJ10CA Bourns 10V 11.1 12.3 17V 5uA 1mA 88.3A 1500W 5.0W

(𝑉𝑖𝑛_𝐴𝑏𝑠𝑀𝑎𝑥 − 𝑉𝐵𝑅𝑚𝑖𝑛 )2 (40𝑉 − 11.1𝑉)2

1 𝑅𝑃 ≥ = = 835Ω (𝒄𝒉𝒐𝒐𝒔𝒆 𝟏𝒌𝜴)
𝑃𝑅𝑃𝑚𝑎𝑥 1𝑊
𝑉𝑖𝑛_𝐴𝑏𝑠𝑀𝑎𝑥 − 𝑉𝐵𝑅𝑚𝑖𝑛 40𝑉 − 11.1𝑉
2 𝐼𝑚𝑎𝑥 = = = 28.9𝑚𝐴
𝑅𝑃 1𝑘Ω

3 𝑃𝑇𝑉𝑆𝑚𝑎𝑥 = 𝐼𝑚𝑎𝑥 ∙ 𝑉𝐶 = 28.9𝑚𝐴 17𝑉 = 491.3𝑚𝑊

10
Selecting Rflt for Abs Ratings to Prevent damage
Parameters known: +5V +3.3V

1 Vin_Abs (ADC) ±15𝑉

VC Vin_Abs ADS8588S 2.5V
Buffer
Reference
2 Iin_Abs (ADC) ±10𝑚𝐴 Iin_Abs
Input Clamp
Protection
Vref AVDD DVDD

Rp Rflt AINP 1MΩ

3 VC_Max (TVS) 17𝑉
+
RSH
Vg D1
10mA PGA
ADC
Cflt LPF Driver - N-Bit
4 IPP (TVS) 88.3A SMAJ10CA
S1
CSH
Comp Register
+
1MΩ
Rflt AINM N-Bit
Select Rflt : CDAC
AGND DGND

17 − 15 𝑉
𝑅𝑓𝑙𝑡 ≥
1 Rflt 10𝑚𝐴
≥ 200Ω

2 Select Rflt =1kΩ

11
External TVS (SMCJ10CA) – Hardware Performance
(TVS - SMCJ10CA, Rp=1kΩ, Rflt=1kΩ, Cflt=1nF, ADS8588S at 200ksps sampling rate)

Performance without external diode

Measured on ADS8588SEVM (200ksps):
Parameter Min Typ Max Unit
SNR 91 92 dB
THD -110 -95 dB

Measured with TVS:

SNR = 92.3dB
THD = - 69.6dB

12
 Capacitance Variation Causes Worse THD
• Capacitor(CT) is viewed as a capacitor(frequency) controlled resistor with a 1/Zc variation
in impedance as capacitor(frequency) value variation.
+10V
SMCJ10CA from Bourns
Vg 0V +5V +3.3V

-10V
CT
ADS8588S 2.5V
Buffer
10nF Reference
Input Clamp Vref AVDD DVDD
Protection
1MΩ
2.3nF
Rflt AINP
t + Vg Rp RSH
ADC
Cflt PGA LPF Driver -
S1 N-Bit
D1 Comp
ZCT Rflt 1MΩ
CSH +
Register
CT
(2.3~10nF) AINM N-Bit
CDAC
AGND DGND
1 1
ZC_𝑚𝑖𝑛 = = = 15.9kΩ
2π · fin · CT_max 2π · 1kHz · 10nF

1 1
ZC_𝑚𝑎𝑥 = = =69.2kΩ
2π · fin · CT_m𝑖𝑛 2π · 1kHz · 2.3nF
13
TVS Diodes
TVS Diodes: Electrical Characteristics and Performance Measurement Result

Reverse Breakdown Reverse Breakdo Peak

Voltage (VBR) Clamping Capacitance Measured Peak Power
Standoff Leakage wn pulse
Part Numbers MFG Voltage Variation THD Dissipation
Voltage Max Current Current
Min Max Max (VC) (CT) ** (dB) (PPP)
(VR) (IR@VR) (IBR@VBR) (IPP)

SMCJ10CA Bourns 10V 11.1 12.3 17V 2.3nF - >10nF* 5uA 1mA 88.3A - 69.6 1500W

SMA6J10A TSM 10V 11.1 12.3 15.7V 200~400pF 5uA 1mA 38.2A - 79.5 600W

PGSMAJ10C
TSM 10V 11.1 12.3 17V 80~160pF 5uA 1mA 23.5A - 81.8 400W
A

* The datasheet does not directly show the capacitance at 0V, it is much larger than 10nF regarding the trend.
** These are estimated value from the capacitance curve in the datasheet.
Note: the ADS8588S specified typical THD = -110dB

14
Thanks for your time!
Please try the quiz.

15
Questions: Protecting ADC with TVS Diode
1. For the circuit below, what is the power dissipated in RP for a continuous 53V
overstress input voltage?
a. 0.4W +5V +3.3V

b. 0.6W
c. 0.8W VD1 2.5V
Buffer
Reference
d. 1.0W 13V Input Clamp Vref AVDD DVDD
Rp Protection
2k Rflt AINP 1MΩ

+
Vg RSH
53V D1
PGA
ADC
Cflt LPF Driver - N-Bit
S1 Comp
CSH Register
Rflt +
1MΩ

AINM N-Bit
Breakdown CDAC
AGND DGND
15V

16
Questions: Protecting ADC with TVS Diode
2. (T/F) A current limiting resistor can be used as input protection in devices with
an internal Back-to-Back Zener ESD cell.
a. True
b. False

3. (T/F) A current limiting resistor can be used as input protection in devices with
an internal SCR type ESD cell.
a. True
b. False

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Questions: Protecting ADC with TVS Diode
4. What is the main performance limitation caused by using a series resistor with
a TVS diode?
a. The nonlinear diode capacitance and series resistance create distortion
b. Noise caused by the series resistance reduces SNR.
c. Temperature drift from the input resistance effects gain error
d. The circuit is more susceptible to RF noise

5. (T/F) A low capacitance TVS diode can be used to reduce THD.

a. True
b. False

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Questions: Protecting ADC with TVS Diode
6. A ±12V input range should be protected with what kind of TVS diode?
a. Bidirectional, with Breakdown = 12V
b. Unidirectional, with Breakdown = 12V
c. Bidirectional, with Stand-off = 12V
d. Unidirectional, with Stand-off = 12V

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Thanks for your time!

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