Synchronous Buck PWM DC-DC Controller: Fitipower Integrated Technology LNC
Synchronous Buck PWM DC-DC Controller: Fitipower Integrated Technology LNC
FP6326/A
Description Features
The FP6326/A is designed to drive two N-channel ● Operates from +5V or +12V
MOSFETs in a synchronous rectified buck topology. ● High Output Current
It provides the output adjustment, internal soft-start, ● Drives Two Low Cost N-Channel MOSFETs
frequency compensation networks, monitoring and ● Fast Transient Response
protection functions into a single package. ● Simple Single-Loop Control Design
( Voltage-Mode PWM Control)
The IC operating at fixed 300kHz or 600kHz
● Internal Soft-Start
frequency provides simple, single feedback loop,
● Over-Current Fault Monitor
voltage mode control with fast transient response.
● Over-Voltage Protection
The resulting PWM duty ratio ranges from 0-100%.
● Under-Voltage Protection
The FP6326/A features over current protection. The ● SOP-8 Package
output current is monitored by sensing the voltage ● RoHS Compliant
drop across the RDS-ON of the low side MOSFET
which eliminates the need for a current sensing
resistor. Applications
This device is available in SOP-8 package. ● Motherboard
● Graphic Card
● Telecomm Equipments
● High Power DC-DC Regulators
● Servers
G: Green
Package Type
SO: SOP-8
Switching Frequency
Blank: 300kHz
Figure 1. Pin Assignment of FP6326/A A: 600kHz
FP6326/A-1.1-JUL-2009 1
This pin provides bias voltage to the high side MOSFET Driver. A bootstrap circuit may be to create a BOOT
BOOT
voltage suitable to drive a standard N-Channel MOSFET.
Connect UGATE to the high side MOSFET gate. This pin is monitored by the adaptive shoot-through protection
UGATE
circuitry to determine when the high side MOSFET has turned off.
GND Ground.
Connect LGATE to the low side MOSFET gate. This pin is monitored by the adaptive shoot-through protection
LGATE
circuitry to determine when the high side MOSFET has turned off.
VCC Power Pin.
OCSET Shutdown Control and connect a resistance (ROCSET) for over current setting.
PHASE Connect the PHASE pin to the high side MOSFET source.
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Block Diagram
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Electrical Characteristics
(VCC=12V, TA=25°C, unless otherwise specified)
Parameter Symbol Conditions Min Typ Max Unit
INPUT
VCC Under Voltage Lockout VUVLO VCC rising 3.7 4.1 4.5 V
ERROR AMPLIFIER
GATE DRIVERS
PROTECTION
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0.84 340
0.83 330
Reference Voltage (V)
0.82 320
Frequency (KHz)
0.81 310
0.80 300
0.79 290
0.78 280
0.77 270
0.76 260
0.75 250
-40 -20 0 20 40 60 80 -40 -20 0 20 40 60 80
o
Junction Temperature ( C)
o Junction Temperature ( C)
Figure 4. Reference Voltage vs. Junction Temperature Figure 5. Frequency vs. Junction Temperature
94
VCC=12V
44
92 VIN=5V
VOUT=1.8V
90
OC Current Source (uA)
42 FP6326
Efficiency (%)
88
40
86
FP6326A
84
38
82
36
80
-40 -20 0 20 40 60 80 0 2 4 6 8 10 12 14
Junction Temperature ( C)
o Output Current (A)
Figure 6. OC Current Source vs. Junction Temperature Figure 7. Efficiency vs. Output Current
VOUT
VOUT
IL IL
VPHASE VPHASE
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VOUT VOUT
IL IL
VPHASE VPHASE
Figure 10. Power On at 15A Loading Figure 11. Power OFF at 15A Loading
VUGATE
VUGATE
VPHASE VPHASE
VLGATE
VLGATE
Figure 12. Switching waveform (UGATE rising) IOUT=0A Figure 13. Switching waveform (UGATE rising) IOUT=15A
VUGATE
VUGATE
VPHASE VPHASE
VLGATE VLGATE
Figure 14. Switching waveform (UGATE Falling) IOUT=0A Figure 15. Switching waveform (UGATE Falling) IOUT=15A
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VUGATE
VPHASE
VPHASE
VLGATE
VLGATE
Figure 16. Switching waveform (UGATE rising) IOUT=0A Figure 17. Switching waveform (UGATE rising) IOUT=15A
VUGATE VUGATE
VPHASE VPHASE
VLGATE VLGATE
Figure 18. Switching waveform (UGATE Falling) IOUT=0A Figure 19. Switching waveform (UGATE Falling) IOUT=15A
VOUT IL
VOUT
IL
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VOUT VOUT
IL IL
Figure 22. Transient test:1kHz, Slew rate:2.5A/us Figure 23. Transient test:1kHz, Slew rate:2.5A/us
VCC=12V, VIN=5V
FP6326A VCC=12V, VIN=12V
VCC
VOUT
VOUT
IL
IL
VPHASE
Figure 24. Transient test :1kHz, Slew rate: 2.5A/us Figure 25. OCP Using DC Loading
VCC=12V, VIN=12V
VCC
VOUT
IL
VPHASE
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Functional Description
Initialization Shutdown
The Power-On Reset (POR) function continually Connecting a small transistor to OCSET pin, and
monitors the input supply voltage and the enable pulling the OCSET voltage less than 0.15V can
function. The POR monitors the bias voltage at the shutdown the FP6326/A. At this condition, the
VCC pin FP6326/A is shutdown and high side and low side
MOSFETS are turned off. The output is floating.
When VCC power is ready, the FP6326/A starts to
ramp up the output voltage up to the target voltage. Under-Voltage Protection
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Application Information
Introduction The ESR can be calculated from the following
formula.
The FP6326/A integrated circuit is a synchronous
PWM controller, it operates over a wide input voltage ⎛V ⎞
ESR = ⎜ RIPPLE ⎟
range. Being low cost, it is a very popular choice of ⎝ ΔIL ⎠
PWM controller. This section will describe the
FP6326/A application suggestion. The operation and An aluminum electrolytic capacitor's ESR value
the design of this application will also be discussed is related to the capacitance and its voltage
in detail. rating. In most case, higher voltage electrolytic
capacitors have lower ESR values. Most of the
Design Procedures time, capacitors with much higher voltage ratings
may be needed to provide the low ESR values
This section will describe the steps to design required for low output ripple voltage.
synchronous buck system, and explains how to
construct basic power conversion circuits including b. The capacitor voltage rating should be at least
the design of the control chip functions and the basic 1.5 times greater than the output voltage, and
loop. often much higher voltage ratings are needed to
satisfy the low ESR requirements needed for low
(1) Synchronous Buck Converter output ripple voltage.
Since this is a buck output system, the first quantity (3) Output N-channel MOSFET Selection
to be determined is the duty cycle value. The
formula calculated the PWM duty ratio, apply to the a. The current ability of the output N-channel
system which we propose to design: MOSFETs must be at least more than the peak
switching current IPK. The voltage rating VDS of
the N-channel MOSFETs should be at least 1.25
times the maximum input voltage. Choose the
low RDS-ON MOSFETs for reducing the
conduction power loss. Choose the low CISS
(2) Inductor Selection
MOSFETs for reducing the switching loss. But
To find the inductor value it is necessary to consider most of time, the two factors are trade-off.
the inductor ripple current. Choose an inductor Consider the system requirement and define the
which operated in continuous mode down to 10 MOSFETs rating.
percent of the rated output load:
b. The MOSFETs must be fast (switch time) and
ΔIL = 2 x 10% x IO must be located close to the FP6326/A using
short leads and short printed circuit traces. In
The inductor “L” value for this system is connected case of a large output current, we must layout a
to be: copper to reduce the temperature of these two
MOSFETs.
(VIN - VDS(sat) – VO) x DMIN
L ≧
ΔIL x fS (4) Input Capacitor Selection
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Board Layout
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Outline Information
SOP- 8 Package (Unit: mm)
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