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Semiconductor Lasers

The document summarizes key aspects of semiconductor lasers: 1. Semiconductor lasers emit coherent light through stimulated emission and have good output power, high modulation speed, and narrow spectral width, making them useful for optical communications. 2. Lasing requires optical gain, provided by stimulated emission, and positive feedback from an optical cavity formed by cleaved facets or distributed feedback gratings. 3. The laser threshold occurs when the total gain equals losses from the cavity, determining the threshold current and carrier density required for lasing.

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0% found this document useful (0 votes)
123 views17 pages

Semiconductor Lasers

The document summarizes key aspects of semiconductor lasers: 1. Semiconductor lasers emit coherent light through stimulated emission and have good output power, high modulation speed, and narrow spectral width, making them useful for optical communications. 2. Lasing requires optical gain, provided by stimulated emission, and positive feedback from an optical cavity formed by cleaved facets or distributed feedback gratings. 3. The laser threshold occurs when the total gain equals losses from the cavity, determining the threshold current and carrier density required for lasing.

Uploaded by

azan
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SEMICONDUCTOR LASERS

• emit light through stimulated emission


N2
hν hν

N1
• coherent light emission
• good output power 10-20 mW
• high modulation speed (to 30 GHz)
• narrow spectral width of emission
• used in most high-capacity optical communication systems

Lasing Principles
The laser is an optical oscillator
Conditions required for lasing:
1. Optical gain - to overcome losses in optical cavity
2. Positive feedback - provided by cavity, so total phase shift in
single round trip is multiple of 2π, so that
feedback input phase matches phase of
original input
Mirror Partially transmitting
mirror

Laser output

Active medium (pumped)


Optical amplifier

Output coupling is achieved by making one of resonator mirrors partially


transmitting.
Optical Gain

Forward bias heavily doped P-N junction

P N

Conduction band

Valence band

Active region

When the injected carrier density in active layer > transparency value, get
population inversion → active region exhibits optical gain.

Optical signal propagating in this region induces stimulated emission, and


amplifies as e gz (where g = gain coefficient)

250

Optical
Gain
(cm-1)

λ (µm)
1.25 1.3 1.35
Feedback

Place the gain medium inside an optical cavity resonator formed by


two mirrors : Fabry-Perot cavity

R1 R2
Gain medium

z=0 z=L
Mirror Mirror

Current injection

L
Cleaved facet Cleaved facet

n − 1
2
Cleaved facet reflectivity R =   n ≈ 3.5 typical semiconductor
 n + 1

Laser threshold current

Optical gain must exceed cavity losses (eg. mirrors etc.) so that the
photon population can build up.

Consider E field plane wave, amp E0, traveling one round trip

Gain e( g / 2 ) 2 L (Note g is intensity gain)

Loss ( R1R2 )1/2 e−α int L


(Note αint = internal loss)

Phase change 2βL


In steady state, the plane wave should remain unchanged after one round
trip

⇒ E0 e gL ( R1 R2 ) e − α int L e j 2βL = E0
1/2

1  1 
Equate amplitude ⇒ g = α int + ln  Threshold Gain
2 L  R1 R2 

c
Equate phase ⇒ 2βL = 2mπ ⇒ υ = υ m = m m integer
2nL

These frequencies correspond to longitudinal modes


(integral number of half wavelength must fit between cavity boundaries)

c
Longitudinal mode spacing ∆υ L =
2nL
∆υ ∆λ λ2
Since = ⇒ ∆λ =
υ λ 2 Ln

Output spectrum

g(λ) Oscill freqs where


Gain > losses &
Cavity is resonant

αcav

λ
Ex An InGaAsP semiconductor laser has a cavity length of 400 µm &
the index n = 3.5. It emits light at a central wavelength of 1.3 µm, and
has a gain spectrum which exceeds cavity losses over 7 nm.

Find (a) the mode spacing in the light output


(b) the number of modes in the output

Laser Structure
I

P
N

Active Cleaved
layer facet
Laser Structures
Double Heterostructure Laser

Junction formed between semiconductors of different Eg and n.

(i) Active region bandgap Eg1 < Eg2, Eg3 surrounding wider bandgap
materials

- carrier confinement in narrow bandgap region (potential well)


- small well defined recombination region

(ii) Active region n1 > n2, n3

- active layer forms optical dielectric slab waveguide in well


confined to amplifying medium
Single Mode Laser
Optical fibre transmission characteristics are best if a single mode (ie
spectrally pure) laser is used, rather than lasers which oscillate in several
longitudinal modes simultaneously.

Principle:

Make cavity loss small for one longitudinal mode, while keeping
losses high for other modes.

Loss profile
Gain
profile

Longitudinal
modes Lasing
mode

Longitudinal mode with smallest cavity loss reaches threshold first and
becomes dominant mode.
Other neighbouring modes are discriminated by their higher losses which
prevent their build-up.

Distributed Feedback DFB Lasers

• Feedback distributed throughout cavity length by using an internal built


in Bragg grating, that causes a periodic perturbation of the refractive
index
• Bragg diffraction couples waves propagating in the forward and
backward directions.

Bragg condition: coupling only occurs for λ satisfying

1 λ
Λ =  
2  n
where Λ = grating period
λ
= internal wavelength
n

eg. For DFB laser at 1.55 µm and with n = 3.3, require grating with
pitch of 0.235 µm.

Grating P
Λ

Light
Active
region N

Frequency selective feedback inside cavity

Cavity losses are minimum only for l wavelength which satisfies Bragg
condition and losses are high for all other modes
Periodic variation of thickness
translates into a periodic variation of n

Note DFB lasers are the most commonly used lasers for optical
communications

eg. 10 Mb/s - 20 Gb/s


National terrestrial and submarine international communications.
Light-current characteristics

Rate equations

dP P
Photons = G⋅P + Rsp − (1)
dt τp

Increase Fraction of Photon loss


Due to photons produced due to cavity
Stimulated by spontaneous losses
emission emission that add
to lasing mode

dN I N
Carriers = − − G⋅P (2)
dt q τc

Increase Lost due to e-h recomb.


due to spontaneous & through
current nonradiative stimulated
recombination emission

where G = GN ( N − N 0 ) (3)
Net rate of stimulated emission (N0 transparency)

τp = cavity or photon lifetime


τc = carrier lifetime

d
For CW operation →0
dt

Assume Rsp → 0
dP 1
(i) Below threshold (1) → >0 only if G − ≥0
dt τp
Below this gain P=0

(ii) Threshold is reached at the current where Gτ p = 1


1
(3) → threshold carrier population N th = N 0 +
GN τ p
qN th q  1 
Threshold current (2) → I th = =  N0 + 
τc τc  GN τ p 

(iii) Above threshold


τc
N = N th = I th
q
I I th
(2) → 0= − − GP
q q
1 τp
(1) → G= ⇒ P = ( I − I th )
τp q

10

Light
Output/facet
(mW)

0 I (mA)
Ith
Threshold
(≈20 mA)
Direct Modulation of Semiconductor Lasers

Optical
Power

time

I1 Ith I2 Drive Current


I

Modulating signal

time

Current modulating signal will modulate optical output

- but speed of response: risetime, falltime, waveform changes, need


to be considered also.
Pulse Modulation
- dynamic behaviour of laser
Rate eqs.
dN I N
Electrons = − − G⋅ P
dt q τc

dP P
Photons = G⋅P − (neglecting small effect
dt τp of spont. emission)

Step current I1 < I th to I 2 > I th

(i) Below threshold N = N1 < N th


and P = 0

dN I N
⇒Rate eqs
= −
dt q τc
( I 2 − I1 ) τ
Soln. N − N1 =
q
c [1 − e ] −t / τc
provided N < N th

Delay time for N to reach N th

I −I 
→ td = τ c ln  2 1 
 I 2 − I th 
(ii) Above threshold
After N reaches N th , P will start to increase from 0 and N will
continue to increase.
Express N & P in terms of their steady state values for I 2
N = N th + ∆N

P = Ps + ∆P
We expect ∆N and ∆P, the departures from the steady state values of N
& P to decay to 0, according to the solution of the D.E.

Substitute into rate eqs, and simplify → gives two DE's for

d ( ∆P ) d ( ∆N )
and
dt dt

This pair of eqs can be reduced to a single eq in one variable ∆N, by


d ( ∆N ) d ( ∆P )
differentiating the eq for and substituting for to eliminate
dt dt
the term involving ∆P

d 2 ( ∆N ) d ( ∆N )
→ 2
+ 2 α + ω 20 ∆N = 0
dt dt

where α and ω0 are constants.

Solution of DE

( N th Ps )
∆N = e −α t sin ωt
1/2
(4 )
∆P = − Ps e −α t cosωt (5 )

Ps 1
where α is the damping constant α= +
2 N th τ p τ c

Ps 1
and ω0 is the oscillation frequency ω0 =
N th τ p

Eq's (4) and (5) describe damped oscillation in both N and P


I2
I
I1 t

Nth
N
t
td

Ps
P

The rate eqs coupled by the common term GP describe a relationship


between N and P that has potential for oscillation

As N ↑ , gain & therefore P ↑


As P ↑ , population inversion depleted & N ↓
The decrease in N leads to a decrease in P which allows N to
increase
This resonant-type relation, with a time lag between cause and
effect can be expected to oscillate.
In diode laser the oscillation is damped & ultimately decays to 0.

Note Optical pulses have finite leading & trailing edges


eg. risetimes & falltimes ~100-300 ps
Also there is overshoot & damped oscillations.
Nevertheless the optical waveform deviations relative to the
applied electrical pulse are small enough to enable
semiconductor lasers to be used for data transmission to
10 Gbit/s.
Laser Bandwidth & Small Signal Response
For sinusoidal small signals driving the laser, the finite rate of laser
response has the effect of a limited bandwidth.
The general solution of the rate equations is

P (t ) =
Pb + Pm sin (ωmt + θ m )
N (t ) =
Nb + Nm sin (ωmt + ϕ m )
for I (t ) = Ib + Im sin(ωmt )

bias modul modul


amp freq
A 2nd order DE results
The solution gives the transfer function.
Ib
=3
6 I th
Response 4.5
(dB) 0

-6

-12
5 10 15
Frequency (GHz)

The peaking in the response is a result of the same resonant interaction


between N & P that causes self-oscillation in the transient response to
pulse modulation.
Note Bandwidth increases with bias Ib above threshold
Laser bandwidth to 30 GHz has been observed, but it is often
limited to around 10 GHz due to electrical parasitics.
Optical Transmitters

Optical transmitter must provide for coupling laser light into a fibre,
and an electrical driving circuit for biasing and modulating the laser.

Coupling
Tapered lensed fibre

Laser

Coupling efficiency improved by tapering the fibre end and forming


a lens at the fibre tip
Coupling efficiency ≈ 50%

Laser Driving Circuitry

Provide electrical power to the laser


Modulate the light output via the signal

Biasing
Laser is a threshold device
- for digital transmission, bias near but below threshold
ie. prebias in the off state
- reduces switch on delay & minimises relaxation oscillations
- allows easy compensation for changes in ambient temperature &
device aging

Automatic output level control for laser - laser drive circuit with
optical feedback to keep average optical power constant
Vref

Set Op
Pmean amp
Ibias Imod
Monitor
photodiode
Laser Fibre

Monitor photodiode is a photodetector positioned at rear facet of the


laser. The detected signal is integrated & compared with a reference by
the op amp, which is used to feedback control the dc bias to laser
- thus the mean optical power is maintained constant.

Note Bias level control is essential, since laser threshold is sensitive


to temperature, & also increases with aging.

Note Even if the bias level is adjusted dynamically, the laser slope
efficiency for modulation can still change with temperature (&
aging) - a thermoelectric cooler is included in the laser
package to stabilise the laser temperature.

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