1

Power Electronics & Drives

Unit: 1
POWER SEMICONDUCTOR
DEVICES
THYRISTOR (SCR)

Diploma in Electrical Engineering

5th semester

Prepared by:
Debabrata Pradhan
Lecturer in Electrical Engineering
Baruipur Govt. Polytechnic
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Syllabus as per WBSCTE:

Unit-1: POWER SEMICONDUCTOR DEVICES:
1.1 THYRISTOR (SCR)
1.1.1 Construction, operation & symbol.
1.1.2 V-I characteristics of SCR (Holding current, Latching current, Breakover voltage).
1.1.3 Turn on methods - Voltage triggering, Gate triggering, dv/dt triggering.
1.1.4 Turn off methods – Current reduction, AC line commutation, Forced commutation.
1.1.5 Thyristor specifications – voltage rating, current rating, power rating, dv/dt, di/dt,
Gate current, temperature.
1.1.6 Utility of Snubber circuit , Freewheeling diode.
1.1.7 DIAC, TRIAC, SCS – Principle of operation, characteristics & application.
1.1.8 IGBT - Principle of operation, characteristics & application

POWER SEMICONDUCTOR DEVICES:

 Power semiconductor devices are working on the principle of electronics but rated at
power level rather than signal level.
 Power semiconductor devices are the work-horses of power electronics.
 There are several power semiconductors devices currently involved in several
applications.

The main types of power semiconductor switches are

1. Power Diodes
2. Thyristor devices
a. Silicon controlled rectifier (SCR)
b. Silicon controlled switch (SCS)
c. Triac

3. Power transistors
a. Bipolar junction transistor (BJT)
b. Metal oxide semiconductor field effect transistor (MOSFET)
c. Insulated gate bipolar transistor (IGBT)

THYRISTOR (SCR):
 Bell laboratories first developed a silicon based semiconductor device called thyristor.
 Later on, many other devices having characteristics similar to that thyristor
characteristics were developed. These semiconductor devices are DIAC,SCS, TRIAC,
GTO etc.
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 This whole family of semiconductor devices is called thyristor family.

 The oldest member of the thyristor family is silicon controlled rectifier (SCR).
 SCR is the most widely used device.
 An earlier gas filled tube device called a thyratron provided a similar electronic switching
capability, where a small control voltage could switch a large current.
 The term thyristor is derived from a combination of thyratron and transistor

Construction:
 Thyristor is a 4 – layer, 3 junctions, 3 terminals, PNPN semiconductor switching device.
 These three terminals are anode, cathode and gate.
 A thyristor has 4 layers of alternate p type and n type silicon semiconductors. Forming
three junctions J1, J2 and J3.
 The terminal connected to outer n region is called cathode(K).The terminal connected to
outer p region is called anode(A) and gate is connected to the inner p region.
 An SCR (Silicon controlled rectifier ) is so called because silicon is used for its
construction and its operation as a controlled rectifier ( very low resistance in forward
conduction and very high resistance in reverse direction.) .
 An SCR is an unidirectional device that blocks current flow from cathode to anode

Fig. 1. Schematic diagram Fig.2. Constructional details

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Fig.3. Thyristor

Symbol:

Fig.4. Circuit symbol

V-I characteristics of SCR:

An elementary circuit diagram for obtaining static V-I characteristics is shown in fig.5.
.

Anode and cathode are connected to main source voltage (E) through the load. The gate and
cathode are fed from source 𝐸𝑆.
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Fig.5. Elementary circuit diagram for obtaining static V-I characteristics

A typical V-I characteristic of an SCR is as shown below:

Fig.6. V-I characteristic of an SCR

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Here,

𝑉𝑎 -Anode voltage across the thyristor terminal A and K.

𝐼𝑎-Anode current
𝑉𝐵𝑂-Forward breakover voltage
𝑉𝐵𝑅-Reverse breakover voltage
𝐼𝑔 -Gate current

SCR have 3 modes of operation:

1. Reverse blocking mode
2. Forward blocking mode
3. Forward conduction mode

1.Reverse Blocking Mode

 When cathode of the thyristor is made positive with respect to anode with switch open,
thyristor is in reverse biased.
 Junctions 𝐽1 and 𝐽3 are reverse biased where junction 𝐽2 is forward biased. The device
behaves as two diodes are connected in series and in reverse bias.
  As the thyristor is reverse biased and in blocking mode. A small leakage current of the
order of few mA only flows. It is called reverse blocking mode operation.
 If the reverse voltage is increased, at a critical breakdown level called reverse breakdown
voltage 𝑉𝐵𝑅, an avalanche occurs at 𝐽1 and 𝐽3 and the reverse current increases rapidly.
 As a large current associated with 𝑉𝐵𝑅 and hence more losses to the SCR. This results in
thyristor damage as junction temperature may exceed its maximum temperature rise.

Fig.7. (a) 𝐽1 and 𝐽3 are reverse biased and 𝐽2 is forward biased

(b) 𝐽1 and 𝐽3 are forward biased and 𝐽2 is reverse biased
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2. Forward Blocking Mode

 When anode is positive with respect to cathode, with gate circuit open, thyristor is
said to be forward biased as shown in fig.7.(b).
 Junction 𝐽1 and 𝐽3 are forward biased and 𝐽2 is reverse biased.
 In this mode a small current, called forward leakage current flows. As the forward
voltage is increases junction 𝐽2 will have an avalanche breakdown at a voltage called
forward breakover voltage (𝑉𝐵𝑂).
 When forward voltage is less then 𝑉𝐵𝑂 thyristor offers high impedance. Thus a
thyristor acts as an open switch in forward blocking mode.

3. Forward Conduction Mode

 A thyristor can be brought from forward blocking mode to forward conducting mode:
1. By exceeding the forward breakover voltage.
2. By applying a gate pulse between gate and cathode.
 Thyristor conducts current from anode to cathode with a very small voltage drop
across it. Voltage drop is of the order of 1 to 2mV. This small voltage drop is due to
ohmic drop across the four layers of the device.
 During forward conduction mode of operation thyristor is in on state and behave like a
close switch..

Holding current: It is the minimum value of anode current below which if it falls, the SCR
will turn OFF.

Latching current: The latching current may be defined as the minimum value of anode
current which at must attain during turn ON process to maintain conduction even if gate signal is
removed.

Turn on methods:
A thyristor can be turned on by any one of the following methods :
1. Forward voltage triggering
2. Gate triggering
3. 𝑑𝑣/𝑑𝑡 triggering
4. Light triggering( not in syllabus)
5. Temperature triggering ( not in syllabus)

Forward Voltage triggering:

 A forward voltage is applied between anode and cathode with gate circuit open.
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 Junction 𝐽1 and 𝐽3 is forward biased and Junction 𝐽2 is reverse biased.

 As the anode to cathode voltage is increased breakdown of the reverse biased junction
𝐽2 occurs. This is known as avalanche breakdown and the voltage at which this
phenomena occurs is called forward breakover voltage.
 The conduction of current continues even if the anode cathode voltage reduces below
forward breakover voltage (𝑉𝐵𝑂) . Now SCR can be turned off only by reducing anode
current below the holding current for the thyristor.

Gate triggering:

 This is the reliable, simplest and efficient method of firing.

 When a SCR is forward biased, a positive gate voltage is applied between gate and
cathode.
 In practice the transition from OFF state to ON state by exceeding 𝑉𝐵𝑂 is never employed
as it may destroy the device. A thyristor with forward breakover voltage (say 800V)
higher than the normal working voltage( say 4ooV). This means thyristor remain forward
blocking state at normal working voltage with gate is open.
 When we require the turning ON of a SCR, a positive gate voltage is applied between
gate and cathode. In a SCR, cathode n layer is heavily doped compared to gate p layer.
So, when gate supply is given between gate and cathode, gate p layer is flooded with
electron from cathode n layer. Now the thyristor is forward biased, so some of these
electron reach junction J2. As a result width of the depletion region around the J2 is
reduced. As a result breaks down J2 occur at a voltage less than 𝑉𝐵𝑂. As 𝐼𝑔 increases 𝑉𝐵𝑂
reduces .

Fig.8. Variation of forward breakover voltage with gate current

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 For gate triggering the duration of applied gate current should be more then turn ON
time. This means that if the gate current is reduced to zero before the anode current
reaches a minimum value known as holding current, SCR can’t turn ON.
 In this process power loss is less and also low applied voltage is required for triggering.

dv/dt triggering:

 When SCR is forward biased, junction J1 and J3 are forward biased and junction J2 is
reversed biased . Junction J2 has the characteristics of a capacitor due to charges existing
across the junction, so it behaves as a capacitor ( an insulator is place between two
conducting plate). J2 is known as junction capacitor. If the entire anode to cathode
farward voltage Va appears across J2 junction and the charge is denoted by Q, then a
charging current i given by eqn. :

As Cj, the capacitance of junction J2 ,is almost constant, the current is given by

 If the rate of rise of forward voltage 𝑑Va/𝑑𝑡 is high , the charging current i will be more.
This charging current plays the role of gate current and turns on the SCR even when gate
signal is zero.
 So if we increase the rate of change of forward voltage instead of increasing the
magnitude of voltage. Junction 𝐽2 breaks and starts conducting.
 A high value of changing current may damage the SCR. So SCR may be protected from
high 𝑑𝑣/𝑑𝑡.

Turn off methods:

 The process of turning OFF SCR is called Commutation.
 Once the SCR is fired, it remains on even when triggering pulse is removed. So SCR
cannot be turned off by simply removing the gate pulse.
 The condition to be satisfied in order to turn OFF an SCR are:

1. Anode current must be less than holding current. (IA < IH )

2. A reverse voltage is applied to SCR for sufficient time enabling it to recover its
blocking state.
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 A thyristor can be turned off by any one of the following methods :

1.Current reduction:

2.AC line commutation/ Natural Commutation

3. Force commutation.

AC line commutation/ Natural Commutation/class F Commutation:

 In AC circuit, the current always passes through zero for every half cycle.
 When the current passes through natural zero, a reverse Voltage will simultaneously
appear across the device.
 This will turn OFF the device immediately.
 This process is called as natural commutation, since no external circuit is required for this
purpose. It is also known as line commutation.
 AC voltage controllers or phase voltage controllers are the example for the natural
commutation.

Fig.9. AC line commutation(a) circuit (b) waveforms

Forced commutation:
 To turn OFF a thyristor, the forward anode current should be brought to zero for
sufficient time to allow the removal of charged carriers.
 In case of DC circuits the forward current should be forced to zero by means of some
external circuits. This process is called as forced commutation.
 This commutating circuit consist of components like inductors and capacitors called as
commutating components. These commutating components cause to apply a reverse
voltage across the SCR that immediately bring the current in the SCR to zero.
 Forced commutation is classified into different types such as class A, B, C, D, and E.
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Thyristor specifications:
 Thyristors rating indicates voltage, current and power and temperature limits within
which they can be used without damage and malfunction .

Thyristor Voltage Rating:

 Some subscripts are associated with voltage are used for identifying them . The
devices are rate with three subscripts.

The first subscript indicates the state of the SCR as

F – Forward Bias
R – Reverse Bias
T – ON state
D – Forward blocking state with Gate open.
The second subscript indicates the operating values as
S – Surge or Non repetitive value
R – Repetitive value
W – Working value
T – Trigger
The third subscript M indicates peak or maximum value.
 Peak Working Forward blocking voltage (V DWM): It specifies the maximum forward (i.e.
anode positive with respect to the cathode) blocking state voltage that a thyristor can
withstand during working.
 Peak working reverse voltage (V RWM): It is the maximum reverse voltage (i.e. anode
negative with respect to cathode) that a thyristor can with stand continuously.
 ON-state Voltage drop (VT) : This is the voltage drop between the anode and cathode
with specified junction temperature and ON-state forward current. Generally, this value
is in the order of 1 to 1.5 Volts.

Fig.10. Anode voltage ratings during blocking state of thyristor

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 Peak repetitive reverse voltage (V RRM): It specifies the peak reverse transient voltage
that may occur repeatedly during reverse bias condition of the thyristor at the
maximum junction temperature.
 Peak non-repetitive reverse voltage (V RSM): It represents the peak value of the reverse
surge voltage that does not repeat.
 Peak repetitive forward blocking voltage (V DRM): It refers to the peak forward
transient voltage that a thyristor can withstand repeatedly in its forward blocking mode.
 Peak non-repetitive forward blocking voltage (V DSM): It refers to the allowable peak
value of the forward transient voltage that does not repeat.

Thyristor Current Rating:

 Average ON-state Current (I TAV): It is the maximum repetitive average forward

current through the SCR. The power loss of SCR is completely dependent on this value.
 Maximum RMS current (I rms): This is the maximum repetitive RMS current specified
at a maximum junction temperature that can flow through the SCR. For a direct current,
both RMS and average currents are same. Rating is required to prevent excessive heating
in leads.
 Maximum Surge current (I SM ): It specifies the maximum non-repetitive or surge
current that the SCR can withstand . It is provided to accommodate the abnormal
conditions of SCR due to short circuits and faults.
 Maximum Squared Current integral (∫i2dt): This rating is a measure of the energy the
device can absorb for a short time (less than one half cycle of power frequency). This
rating is used in the choice of the protective fuse connected in series with the device.
 Latching Current (I L ): After Turn ON the gate pulse must be maintained until the
anode current reaches this level. Otherwise, upon removal of gate pulse, the device will
turn off.
 Holding Current (I H): The minimum anode current to maintain the thyristor in the On–
State.

Average Power Dissipation (P av): The product of average anode current and forward voltage
drop across the SCR. It is the major source of junction heating for normal duty cycle. Device
may get damaged if rating is exceeded.

dv/dt rating: This rating of thyristor indicates the maximum rate of rise of anode voltage that
will not trigger the device without gate signal.

di/dt rating: This rating of thyristor indicates the maximum rate of rise in current from anode
to cathode with out harm to the device. Typical value of di/dt are 20-500A/µ sec

Peak forward gate current (IGRM): The forward gate current should not exceed this limit even
on instantaneous basis.
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Gate current to trigger (IGT): Minimum value of the gate current below which reliable turn on
of the thyristor can not be guaranteed. Usually specified at a given forward break over voltage.

Thyristor protection:
Reliable operation of a thyristor requires that its specified ratings are not exceeded. In practice, a
thyristor may be subjected to overcurrents and overvoltages. During thyristor turn on di/dt may
be large. The high value of dv/dt may false trigger the SCR.

Various Protection Techniques are used for SCR

 di/dt Protection
 dv/dt Protection
 Over voltage Protection
 Over Current Protection
 Thermal protection.

di/dt Protection of SCR:

 When a SCR is turned ON with application of gate signal conduction of anode current
starts flowing in the immediate neighborhood of the gate-cathode junction.
 It takes some time to spread across the whole area of the the junctions.
 Thyristor design allows the spread of conduction to the whole junction area as rapidly as
possible.
 If (di/dt) i.e. rate of rise of anode current is high, current spreads in a non-uniform
manner which leads to formation of local hot spots near gate-cathode junction, that
might damage the device by overheating.
 A inductor is connected in series with the thyristor in order to restrict this high (di/dt).

Dv/dt Protection of SCR:

 When a SCR is forward biased, J1 and J3 junctions are also forward biased and J2 is
reverse biased. This J2 acts as a capacitor.
 If rate of rise forward voltage applied across SCR is high, charging current starts
flowing through J2 and it is sufficiently high to turn ON the SCR even without the gate
signal.
 This is called as dv/dt triggering of SCR and it is not preferred as it may lead to false
triggering.
 For reliable operation of the thyristor , the rate of rise of forward anode to cathode
voltage dv/dt must be kept below the specified rate limit.
 A snubber circuit across the SCR is used to prevent false turn on of a thyristor .
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Snubber circuit
 A snubber circuit consists of a series combination of capacitor and resistor connected

across the SCR.

Fig.11. Snubber circuit

 If switch is closed at t = 0, the rate of rise of voltage across the thyristor is limited by the
capacitor. With the switch closed, the voltage that appears across the SCR is bypassed to
the RC network as the capacitor acts as a short circuit, thus reduce the voltage to zero.
 When thyristor is turned on, the discharge current of the capacitor is limited by the
resistor (Rs) as shown in fig.11.
 The value of the resistor is few hundred ohms.
 With passage of time, the capacitor gets charged up at a slow rate which is significantly
small and unable to turn on the SCR.
 Thus the dv/dt rating is always way lesser than the maximum dv/dt ratings.

Freewheeling diode:
 It is a diode connected across the inductive load terminals to prevent the development of
high voltage across the switch.
 When the inductive circuit is switched off, this diode gives a short circuit path for the
flow of inductor decay current and hence dissipation of stored energy in the inductor.

Necessity of Freewheeling Diode:

 Purpose of freewheeling diode is to free wheel the stored energy in inductor by
providing a short circuit path.

For better understanding, let us consider the fig.12.

 When switch S is closed, the steady state current I through the circuit is (V/R) and hence
the inductor stored energy (LI2)/2.
 When this switch S is opened, the current will suddenly decay to zero from steady value I
= (V/R). Due to this sudden decay of current, a high reverse voltage equal to L(di/dt) will
appear across the inductor terminals and hence across the diode and switch.
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 This will lead to sparking across the switch contacts.

Fig.12. Circuit without freewheeling diode

 To avoid such occurrences freewheeling diode is connected across the inductive load
RL as shown in Fig.13. (a).

Working of freewheeling diode:

Fig.13. (a) Circuit without freewheeling diode.(b) mode-1(c) mode-2

Mode-1: In fig.13.(b), inductive load RL is connected to the DC source through switch S and
diode D. When this switch S is closed at t = 0 sec, current starts to flow through the load. This
current builds up in the inductor and reaches its steady value after some time. The current in the
circuit is i.

Mode-2: When the switch S is opened at t = 0 (say), current in the circuit tends to decay through
the load. This decay of current through inductor results in development of a reverse voltage equal
to L(di/dt) across the inductor terminals. This reverse voltage across inductor terminal makes
freewheeling diode forward biased. Thus freewheeling diode behaves like a closed switch as
shown in fig.13. (c).
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Thus, the main circuit current is transferred to the circuit consisting of freewheeling diode FD, R
and L as shown in fig.13.(c). In this new circuit, the current will exponentially decay to zero.
This decaying current in the circuit is given as below.

Thus we see that, freewheeling diode dissipates the stored energy in inductor by providing a
short circuit path. It also provides a shorted path for exponentially decay of circuit current. Thus
high voltage is not induced. Therefore, the switches and diode is protected from the high voltage.

Fig.14. Current variation in the circuit

DIAC:
 The term DIAC stands for the diode that can work on ac.
 It is a bidirectional semiconductor switch that can be turned ON in both forward and
reverse direction.
 The device is a member of the thyristor family.
 A DIAC is sometimes is called gateless TRIAC.

Symbol:

 DIAC is given by the symbol of two Diode connected in antiparallel ( opposite to one
another ).
 It has two terminals. Since the DIAC is bidirectional, we can’t name those terminals as
anode and cathode, the terminals of DIAC are called MT1 and MT2 where MT stands
for Main terminals.
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Fig.15. (a) cross sectional view (b) circuit symbol

Principle of operation:
If voltage V12 with terminal 1 positive w.r.t terminal 2 , exceeds breakover voltage V BO1,
then structure pn pn conducts . Incase terminal 2 is positive w.r.t terminal 1 and when
V21 exceeds breakover voltage VBO2 ,structure pn pn´ conducts.

Characteristics:

Fig.16. V-I Characteristics of DIAC

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DIAC has symmetrical breakdown characteristics as its leads are interchangeable. when
not conducting , it acts like an open switch. When conducting, it acts like a low resistance
with about 3 V drop across it.

Application: It is mostly used in triggering TRIAC and other Thyristor based circuits.

TRIAC:
 SCR is a unidirectional device. But TRIAC is a bidirectional device. So, TRIAC
conducts in both direction.
 TRIAC=TRIode + AC
 It is a three terminal device(Triode).
 TRIAC means triode that works on ac
 It is a controlled device. Its use is control of power in ac circuit.

Symbol:

 It is considered to be two SCRS connected in anti parallel.

 As it conducts in both direction so its terminal are named as MT1,MT2 and gate G

Fig.17. Circuit symbol of TRIAC Fig.18. Cross sectional view of TRIAC

Principle of operation:
 With no signal to gate, TRIAC will block both half cycles of ac applied voltage
incase peak value of this voltage is less than the breakover voltage of V BO1 or
VBO2 of the TRIAC.
 However, TRIAC can be turned on in each half cycle of the applied voltage by
applying a positive or negative gate voltage w.r.t terminal MT1.

Characteristics:
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Fig.19. V-I Characteristics of TRIAC

Application:
TRIACs are widely used in residential lamp dimmers, heat control and for the speed control of
single phase series and induction motor.

SCS (Silicon control switch):

 SCS is a tetrode i.e. four electrode thyristor.
 SCS is a 4 layer, 4 terminal pnpn device.
 Its four terminals are anode (A), cathode (K), anode gate (AG) and cathode gate(KG).
 It has two gates, anode gate (AG) like a PUT and cathode gate(KG) like an SCR.
 SCS can be turned on by either gate.
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Principle of operation:
When a negative pulse is applied to gate AG, junction J1 is forward biased and SCS is
turned on. A positive pulse at AG will reverse bias junction J1 and turns off the SCS.

When a positive pulse at gate KG turns on the device (just like an SCR) and a negative
pulse at KG turns it off (just like a GTO).

Fig.20. (a) schematic diagram (b) circuit symbol

Application:
Its application includes
 Timing ,logic and triggering circuits.
 Pulse generator
 Voltage sensor
 Oscillators etc
Characteristics:

Fig.21. V-I Characteristics of SCS

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INSULATED GATE BIPOLAR TRANSISTOR(IGBT):

 IGBT combines into advantages of BJT and MOSFET. So IGBT has high input
impedance like MOFFSET and low on state power lose as in BJT.
 IGBT is free from second breakdown problem present in BJT.

Basic construction and working :

Fig.22. Basic structure of IGBT

 IGBT has major difference with MOSFET in the substrate. The n+ layer substrate at the
drain in the power MOSFET is substituted in IGBT by p+ layer substrate called collector.
 When gate to is positive w.r.t emitter, and with gate-emitter voltage more than the
threshold voltage of an IGBT , an n- channel is formed in the p- region like in a power
MOSFET.

Fig.23. (a) basic structure (b) equivalent circuit (c) circuit symbol
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 This n- channel short circuit the n- region and n+ emitter region and an electron
movement in the n channel causes hole injection from p+ substrate layer to n- layer and a
forward current is established as shown in the fig.22.
 The three layers p+,n- and p constitute a pnp transistor with p+ as emitter, n- as base
And p as collector
 Also n- ,p and n+ constitute a npn transistor with n- as collector.
 n- serves as base for pnp transistor and also as collector for npn transistor.
 p serves as collector for pnp transistor and also as base for npn transistor.
 Two pnp and npn transistors can be connected as shown in fig.23.(b).
 Fig.23. (C) is the symbol of IGBT with gate, emitter and collector as its three terminals.

Characteristics:

Fig.24. (a) circuit diagram (b) Static V-I or output characteristics (c) transfer characteristics

Static V-I or output characteristics :

 Static V-I or output characteristics of an IGBT (n-channel type) show the plot of
collector current (Ic) vs collector-emitter voltage(VCE) for various values of gate-
emitter voltages.
 Fig.24. (b) shows Static V-I or output characteristics of an IGBT. The shape of
the output characteristics in the forward direction is similar to that of BJT.
 In IGBT controlling parameter is gate- emitter voltages so IGBT is a voltage
controlled device.
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Transfer characteristics :

 Fig.24.(c) shows the transfer characteristics of an IGBT .The transfer

characteristics of an IGBT is a plot of collector current (Ic) vs gate-emitter
voltage(VGE).
 This characteristics is similar to that of power MOSFET. When VGE is less than
the threshold voltage (VGET.) IGBT is in off state.
 When IGBT off , junction J2 blocks forward voltage and in case reverse voltage
appears across collector and emitter , junction J1 blocks it.

Application:

IGBTs are widely used in medium power applications such as UPS systems, dc and ac motor
drives, power supplies and drives for solenoids, contactors and relays.

References:
1. Dr. P.S. Bimbhra, “Power Electronics” Khanna Publishers

2. Dr. P.C. Sen, “Power Electronics”, Tata McGrow Hill Publishing Company Limited;
New Delhi.

3. Power Semiconductor Devices, Version 2, IIT – Kharagpur, NPTEL.

4. https://electricalbaba.com

Exercise :
1) Fill in the blank(s) with the appropriate word(s)
i. A thyristor is a ________________ terminal device.

ii. A thyristor can conduct current in ________________ direction and block voltage in
________________ direction.

iii. A Triac behaves like two ________________ connected thyristors.

iv. To avoid unwanted turn on of a SCR due to large dv /dt ________________ are used
across triacs.

v. A thyristor may turn ON due to large forward ________________.

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vi. Forward break over voltage of a thyristor decreases with increase in the
________________ current.

vii. Reverse ________________ voltage of a thyristor is ________________ of the gate current.

viii. In the pulsed gate current triggering of a thyristor the gate current pulse width should be
larger than the ________________ time of the device.

ix. A thyristor is turned on by applying a ________________ gate current pulse when it is

________________ biased.
.

x. A thyristor can be turned off by bringing its anode current below ________________
current and applying a reverse voltage across the device for duration larger than the
________________ time of the device.

xi. A Triac is a ________________ device

xii. A thyristor can be turned ON by applying a forward voltage greater than forward
________________ voltage or by injecting a positive ________________ current pulse
under forward bias condition.

xiii. A Triac operates either in the ________________ or the ________________ quadrant of

the i-v characteristics.

Answers:
(i) three (ii) one, both; (iii) anti parallel;
(iv) R-C shubbers; (v) dv/ dt ; (vi) gate;
(vii) breakover, independent; (viii) Turn ON; (ix) positive, forward;
(x) holding, turn off; (xi) bidirectional;
(xii) break over, gate; (xiii) first, third;