TPCP8501
TOSHIBA Transistor Silicon NPN Epitaxial Type
TPCP8501
Switching Applications
Unit: mm
DC-DC Converter Applications 0.33±0.05
0.05 M A
8 5
• High DC current gain : hFE = 100 to 300 (IC = 0.3 A)
• Low collector-emitter saturation : VCE (sat) = 0.2 V (max)
2.4±0.1
2.8±0.1
• High-speed switching : tf = 100 ns (typ.)
0.475 1 4
B
0.05 M B
Absolute Maximum Ratings (Ta = 25°C) 0.65
2.9±0.1 A
0.8±0.05
Characteristics Symbol Rating Unit
0.025 S
S
0.17±0.02 0.28 +0.1
Collector-base voltage VCBO 180 V -0.11
VCEX 150 1.12 -0.12
+0.13
Collector-emitter voltage V
VCEO 100
1.12 +0.13
-0.12
Emitter-base voltage VEBO 7 V
0.28 +0.1
DC (Note 1) IC 2.0 1.Collector 5.Emitter -0.11
Collector current A 2.Collector 6.Collector
Pulse (Note 1 ) ICP 4.0 3.Collector 7.Collector
4.Base 8.Collector
Base current IB 0.2 A
JEDEC ―
Collector power t = 10s 3.3
PC (Note 2) W JEITA ―
dissipation (t = 10s) DC 1.3
TOSHIBA 2-3V1A
Junction temperature Tj 150 °C
Weight: 0.017 g (typ.)
Storage temperature range Tstg −55 to 150 °C
Note 1: Please use devices on condition that the junction temperature is below 150°C.
Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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TPCP8501
Figure 1. Circuit configuration (top view) Figure 2. Marking (Note 4)
8 7 6 5 8 7 6 5
8501 Type
1 2 3 4 1 2 3 4
Lot No.
(Weekly code)
Note 4: ● on lower left on the marking indicates Pin 1.
※ Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = 180 V, IE = 0 ⎯ ⎯ 100 nA
Emitter cut-off current IEBO VEB = 7 V, IC = 0 ⎯ ⎯ 100 nA
Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IB = 0 180 ⎯ ⎯ V
Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 100 ⎯ ⎯ V
hFE (1) VCE = 2 V, IC = 0.3 A 100 ⎯ 300
DC current gain
hFE (2) VCE = 2 V, IC = 1.0 A 80 ⎯ ⎯
Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 33 mA ⎯ ⎯ 0.2 V
Base-emitter saturation voltage VBE (sat) IC = 1 A, IB = 33 mA ⎯ ⎯ 1.1 V
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1MHz ⎯ 23 ⎯ pF
Rise time tr ⎯ 65 ⎯ ns
See Figure 3 circuit diagram
Switching time Storage time tstg VCC ∼− 50 V, RL = 50 Ω ⎯ 1.4 ⎯ μs
IB1 = −IB2 = 33 mA
Fall time tf ⎯ 100 ⎯ ns
Figure 3. Switching Time Test Circuit & Timing Chart
20μs VCC
RL
IB1
IB1 Output
IB2
Input
Duty cycle ＜1%
IB2
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TPCP8501
IC – VCE hFE – IC
2.0 1000
20 16
14
1.6 10
(A)
Ta = 100°C
hFE
8
IC
1.2 25
DC current gain
6
Collector current
100 −55
0.8 4
0.4
Common emitter Common emitter
IB = 2 mA
Ta = 25°C VCE = 2 V
Single nonrepetitive pulse Single nonrepetitive pulse
0 10
0 1 2 3 4 5 6 0.001 0.01 0.1 1 10
Collector−emitter voltage VCE (V) Collector current IC (A)
VCE (sat) – IC VBE (sat) – IC
1 10
Common emitter Common emitter
Collector−emitter saturation voltage
β = 30 β = 30
Base-emitter saturation voltage
Single nonrepetitive pulse Single nonrepetitive pulse
VCE (sat) (V)
VBE (sat) (V)
0.1 1 Ta = −55°C
Ta = 100°C
−55°C
100°C
25°C
25°C
0.01 0.1
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
Collector current IC (A) Collector current IC (A)
IC – VBE Pc – Ta
2.0 1.4
Common emitter Mounted on an FR4 board glass epoxy,
2
VCE = 2 V 1.6 mm thick, Cu area: 645 mm )
(W)
Single nonrepetitive pulse 1.2
1.6
(A)
PC
1.0
IC
Collector power dissipation
1.2
0.8
Collector current
Ta = 100°C −55 0.6
0.8
0.4
0.4 25
0.2
0 0
0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80 100 120 140 160
Base−emitter voltage VBE (V) Ambient temperature Ta (°C)
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TPCP8501
rth – tw
1000
Transient thermal resistance
100
rth(j-a) (°C/W)
10
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
0.1
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse width tw (s)
Safe operating area
10
IC max (Pulsed)*
100 μs*
1 ms*
(A)
1
10 ms*
IC
100 ms*
IC max (Continuous)*
Collector current
DC operation 10 s*
0.1 Ta = 25°C
*: Single nonrepetitive pulse
Ta = 25°C
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
0.01 mounted on an FR4 board (glass
VCEO max
epoxy, 1.6 mm thick, Cu area:
645 mm2).
These characteristic curves must
be derated linearly with increase
in temperature.
0.001
0.1 1 10 100 1000
Collector−emitter voltage VCE (V)
4 2006-11-13
TPCP8501
RESTRICTIONS ON PRODUCT USE 20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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