SMD General Purpose
Transistor (PNP)
MMBTA55/MMBTA56
SMD General Purpose Transistor (PNP)
Features
• PNP Silicon Epitaxial Planar Transistor for
Switching and Amplifier Applications
• RoHS compliance
SOT-23
Mechanical Data
Case: SOT-23, Plastic Package
Terminals: Solderable per MIL-STD-202G, Method 208
Weight: 0.008 gram
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol Description MMBTA55 MMBTA56 Unit
Marking Code 2H/B55 2GM/B56
VCEO Collector-Emitter Voltage -60 -80 V
VCBO Collector-Base Voltage -60 -80 V
VEBO Emitter-Base Voltage -4.0 V
IC Collector Current-Continuous -500 mA
Thermal Characteristics
Symbol Description MMBTA55 MMBTA56 Unit
Total Device Dissipation FR-5 Board, (Note 1)
225 mW
TA= 25°C
Ptot
Derate above 25°C 1.8 mW/° C
RθJA Thermal Resistance from Junction to Ambient 556 ° C/W
Total Device Dissipation Alumina Substrate, (Note 2)
300 mW
Ptot TA= 25°C,
Derate above 25°C 2.4 mW/° C
RθJA Thermal Resistance from Junction to Ambient 417 ° C/W
TJ, TSTG Junction and Storage Temperature Range -55 to +150 °C
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Rev. D/AH
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SMD General Purpose Transistor (PNP)
MMBTA55/MMBTA56
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Off Characteristics
MMBTA55 MMBTA56
Symbol Description Unit Conditions
Min. Max. Min. Max.
Collector-Emitter Breakdown Voltage
V(BR)CEO (Note 3)
-60 - -80 - V IC=-1mA, IB=0
V(BR)CBO Collector-Base Breakdown Voltage -60 - -80 - V IC=-100µA, IE=0
V(BR)EBO Emitter-Base Breakdown Voltage -4.0 - -4.0 - V IE=-100µA, IC=0
ICES Collector-Emitter Cut-off Current - -0.1 - -0.1 μA VCE=-60V, IB=0
- -0.1 - -0.1
ICBO Collector-Base Cut-off Current μA
VCB=-60V, IE=0 VCB=-80V, IE=0
On Characteristics
MMBTA55 MMBTA56
Symbol Description Unit Conditions
Min. Max. Min. Max.
-100 - -100 - VCE=-1V, IC=-10mA
hFE D.C. Current Gain
-100 - -100 - VCE=-1V, IC=-100mA
VCE(sat) Collector-Emitter Saturation Voltage - -0.25 - -0.25 V IC=-100mA, IB=-10mA
VBE(on) Base-Emitter On Voltage - -1.2 - -1.2 V IC=-100mA, VCE=-1V
Small − Signal Characteristics
MMBTA55 MMBTA56
Symbol Description Unit Conditions
Min. Max. Min. Max.
VCE=-1V, IC=-100mA,
fT Current Gain-Bandwidth Product 50 - 50 - MHz
f=100MHz
Note: 1. FR-5=1.0x0.75x0.062 in.
2. Alumina=0.4x0.3x0.024 in, 99.5% alumina.
3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%.
4. fT is defined as the frequency at which hfee x trapolates to unity.
Rev. D/AH
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SMD General Purpose Transistor (PNP)
MMBTA55/MMBTA56
Typical Characteristics Curves
Fig.1-Switching Time Test Circuits
Fig.2- Current-Gain- Bandwidth Product Fig.3- Capacitance
fT, Current-Gain- Bandwidth Product (MHz)
C, Capacitance (pF)
IC, Collector Current (mA) VR, Reverse Voltage (V)
Rev. D/AH
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SMD General Purpose Transistor (PNP)
MMBTA55/MMBTA56
Fig.4- Switching Time Fig.5- DC Current Gain
hFE, DC Current Gain
t, Time (ns)
IC, Collector Current (mA) IC, Collector Current (mA)
Fig.6- “ON” Voltages Fig.7- Collector Saturation Region
VCE, Collector-Emitter Voltage (V)
V, Voltage (V)
IC, Collector Current (mA) IB, Base Current (mA)
Rev. D/AH
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SMD General Purpose Transistor (PNP)
MMBTA55/MMBTA56
Fig.8- Base–Emitter Temperature Coefficient
RθVB, Temperature Coefficient (mV/ ° C)
IC, Collector Current (mA)
Dimensions in mm
SOT-23
Rev. D/AH
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SMD General Purpose Transistor (PNP)
MMBTA55/MMBTA56
How to contact us:
US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162
Tel: (800) TAITRON (800) 824-8766 (661) 257-6060
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Email: [email protected]
Http://www.taitroncomponents.com
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