STS4DNF60L

N-channel 60 V, 0.045 Ω, 4 A, SO-8

STripFET™ Power MOSFET

Features
Type VDSS RDS(on) ID
STS4DNF60L 60V <0.055Ω 4A

■ Standard outline for easy automated surface

mount assembly
■ Low threshold drive
SO-8
Application
■ Switching applications

Description
This Power MOSFET is the latest development of
STMicroelectronics unique “single feature size” Figure 1. Internal schematic diagram
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.

Table 1. Device summary

Order code Marking Package Packaging

STS4DNF60L 4DF60L SO-8 Tape & reel

March 2010 Doc ID 6121 Rev 9 1/12

www.st.com 12
Contents STS4DNF60L

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6

3 Test circuits .............................................. 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

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STS4DNF60L Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage (VGS = 0) 60 V

VGS Gate- source voltage ± 15 V
ID Drain current (continuous) at TC = 25 °C 4 A
ID Drain current (continuous) at TC = 100 °C 2.5 A
(1)
IDM Drain current (pulsed) 16 A
PTOT(2) Total dissipation at TC = 25 °C 2 W
EAS(3) Single pulse avalanche energy 80 mJ
Tj Operating junction temperature
- 55 to 150 °C
Tstg Storage temperature
1. Pulse width limited by safe operating area
2. PTOT=1.6 W for single operation
3. Starting TJ = 25 °C, ID = 4 A, VDD = 30 V

Table 3. Thermal data

Symbol Parameter Value Unit
(1)
Rthj-pcb Thermal resistance junction-pcb D.O. 62.5 °C/W
1. When mounted on inch² FR-4 board, 2 Oz Cu, t < 10sec, dual operation

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Electrical characteristics STS4DNF60L

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source
V(BR)DSS ID = 250 µA, VGS = 0 60 V
breakdown voltage
Zero gate voltage VDS = Max rating 1 µA
IDSS
drain current (VGS = 0) VDS = Max rating, TC=125 °C 10 µA
Gate-body leakage
IGSS VGS = ± 15 V ± 100 nA
current (VDS = 0)
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 1 1.7 2.5 V

Static drain-source on VGS = 10 V, ID = 2 A 0.045 0.055 Ω

RDS(on)
resistance VGS = 4.5 V, ID = 2 A 0.050 0.065 Ω

Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

Forward
gfs VDS =25 V, ID =2 A - 25 - S
transconductance
Input capacitance
Ciss 1030 pF
Output capacitance
Coss VDS = 25 V, f = 1 MHz, VGS = 0 - 140 - pF
Reverse transfer
Crss 40 pF
capacitance
Qg Total gate charge VDD = 48 V, ID = 4 A, 15 nC
Qgs Gate-source charge VGS = 4.5 V - 4 - nC
Qgd Gate-drain charge (see Figure 13) 4 nC

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STS4DNF60L Electrical characteristics

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time 15 ns

VDD = 30 V, ID = 2.2 A, - -
tr Rise time 28 ns
RG = 4.7 Ω, VGS = 10 V
td(off) Turn-off delay time
(see Figure 12)
45 ns
- -
tf Fall time 10 ns

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current 4 A

-
ISDM (1) Source-drain current (pulsed) 16 A
VSD (2) Forward on voltage ISD = 4 A, VGS = 0 - 1.2 V
trr Reverse recovery time ISD = 4 A, di/dt = 100 A/µs 85 ns
Qrr Reverse recovery charge VDD = 20 V - 85 nC
IRRM Reverse recovery current (see Figure 17) 2 A
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

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Electrical characteristics STS4DNF60L

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Source-drain diode forward Figure 7. Static drain-source on resistance

characteristics

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STS4DNF60L Electrical characteristics

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations

Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
vs temperature temperature

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Test circuits STS4DNF60L

3 Test circuits

Figure 12. Switching times test circuit for Figure 13. Gate charge test circuit
resistive load
VDD

12V 47kΩ
1kΩ
100nF
RL 2200 3.3
µF µF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS 2200
RG D.U.T. µF 2.7kΩ VG

PW
47kΩ

PW 1kΩ
AM01468v1 AM01469v1

Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test
switching and diode recovery times circuit

L
A A A
D
FAST L=100µH VD
G D.U.T. DIODE 2200 3.3
µF µF VDD
S B 3.3 1000
B B µF µF
25 Ω VDD ID
D

RG S
Vi D.U.T.

Pw
AM01470v1 AM01471v1

Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform

V(BR)DSS ton toff

tr tdoff tf
VD tdon

90% 90%
IDM
10%
ID 10% VDS
0

VDD VDD 90%

VGS

AM01472v1 0 10% AM01473v1

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STS4DNF60L Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.

Doc ID 6121 Rev 9 9/12

Package mechanical data STS4DNF60L

SO-8 MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 1.75 0.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033
b 0.35 0.48 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.25 0.5 0.010 0.019
c1 45 (typ.)
D 4.8 5.0 0.188 0.196
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 3.81 0.150
F 3.8 4.0 0.14 0.157
L 0.4 1.27 0.015 0.050
M 0.6 0.023
S 8 (max.)

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STS4DNF60L Revision history

5 Revision history

Table 8. Document revision history

Date Revision Changes

30-May-2005 5 Initial electronic version

29-Mar-2006 6 Modified Figure 2 and Figure 3
16-May-2006 7 Modified internal schematic diagram
29-Aug-2007 8 Marking has been updated
30-Mar-2010 9 Inserted EAS value in Table 2: Absolute maximum ratings

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 STS4DNF60L

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12/12 Doc ID 6121 Rev 9