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    B1375

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    gordomonaye
    The NTE152 and NTE153 are silicon complementary transistors in a standard TO220 package designed for medium power switching and audio amplifier applications. They have good linearity, can withstand collector-base voltages up to 90V, collector currents up to 4A, and collector power dissipation up to 40W. They are well-suited for general purpose switching and audio power amplification.

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    B1375

    Uploaded by

    gordomonaye
    94 views2 pages
    The NTE152 and NTE153 are silicon complementary transistors in a standard TO220 package designed for medium power switching and audio amplifier applications. They have good linearity, can withstand collector-base voltages up to 90V, collector currents up to 4A, and collector power dissipation up to 40W. They are well-suited for general purpose switching and audio power amplification.

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    The NTE152 and NTE153 are silicon complementary transistors in a standard TO220 package designed for medium power switching and audio amplifier applications. They have good linearity, can withstand collector-base voltages up to 90V, collector currents up to 4A, and collector power dissipation up to 40W. They are well-suited for general purpose switching and audio power amplification.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    94 views2 pages

    B1375

    Uploaded by

    gordomonaye
    The NTE152 and NTE153 are silicon complementary transistors in a standard TO220 package designed for medium power switching and audio amplifier applications. They have good linearity, can withstand collector-base voltages up to 90V, collector currents up to 4A, and collector power dissipation up to 40W. They are well-suited for general purpose switching and audio power amplification.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    NTE152 (NPN) & NTE153 (PNP)

    Silicon Complementary Transistors


    Audio Power Amplifier, Switch
    Description:
    The NTE152 (NPN) and NTE153 (PNP) are silicon complementary transistors in a standard TO220
    type package designed for general purpose medium power switching and amplifier applications.

    Features:
    D Good Linearity of hFE

    Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


    Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
    Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
    Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
    Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
    Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –4A
    Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
    Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
    Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
    Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
    Note 1. NTE152MP is a matched pair of NTE152 with their DC Current Gain (hFE) matched to within
    10% of each other.
    Note 2. Matched complementary pairs are available upon request (NTE55MCP). Matched comple-
    mentary pairs have their gain specification (hFE) matched to within 10% of each other.

    Electrical Characteristics: (TA = +25°C unless otherwise specified)


    Parameter Symbol Test Conditions Min Typ Max Unit
    Collector–Emitter Breakdown Voltage V(BR)CEO IC = 50mA, IB = 0 90 – – V
    Collector Cutoff Current ICBO VCB = 90V, IE = 0 – – 20 µA
    Emitter Cutoff Current IEBO VEB = 5V, IC = 0 – – 10 µA
    DC Current Gain hFE1 VCE = 5V, IC = 0.5A 40 – 200
    hFE2 VCE = 5V, IC = 3A 15 – –
    Collector–Emitter Saturation Voltage VCE(sat) IC = 3A, IB = 0.3A – – 1.5 V
    Base–Emitter Voltage VBE VCE = 5V, IC = 3A – – 1.5 V
    Transition Frequency fT VCE = 5V, IC = 0.5A 3 8 – MHz
    Collector Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz – 85 – pF
    .420 (10.67)
    Max

    .110 (2.79)

    .147 (3.75) .500


    Dia Max (12.7)
    Max

    .250 (6.35)
    Max

    .500
    (12.7)
    Min
    .070 (1.78) Max

    Base Emitter

    .100 (2.54) Collector/Tab

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