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Capacitive Effects in The PN Junction: - Depletion Capacitance

The document discusses two types of capacitive effects in a pn junction: 1. Depletion capacitance, which arises from changes in the charge stored in the depletion layer when the voltage across the pn junction changes. It occurs when the junction is reverse biased. 2. Diffusion capacitance, which arises from changes in the minority carrier charge stored in the n and p materials when the voltage changes. It occurs when the junction is forward biased. The document provides mathematical expressions for calculating depletion capacitance and diffusion capacitance based on factors like junction area, permittivity, doping concentrations, and applied voltage. It also discusses equivalent circuit models for the pn junction at low and high frequencies.

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1K views18 pages

Capacitive Effects in The PN Junction: - Depletion Capacitance

The document discusses two types of capacitive effects in a pn junction: 1. Depletion capacitance, which arises from changes in the charge stored in the depletion layer when the voltage across the pn junction changes. It occurs when the junction is reverse biased. 2. Diffusion capacitance, which arises from changes in the minority carrier charge stored in the n and p materials when the voltage changes. It occurs when the junction is forward biased. The document provides mathematical expressions for calculating depletion capacitance and diffusion capacitance based on factors like junction area, permittivity, doping concentrations, and applied voltage. It also discusses equivalent circuit models for the pn junction at low and high frequencies.

Uploaded by

Jsk
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Capacitive Effects in the pn Junction

• Depletion capacitance
 Charge stored in depletion layer changes with the change of voltage across
pn junction gives rise to capacitive effect.
 pn junction is reverse biased

• Diffusion Capacitance
 Minority carrier charge stored in the n and p materials as a result of the
concentration profiles established by carrier injection.
 Charge stored in bulk region changes with the change of voltage across pn
junction gives rise to capacitive effect.
 pn junction is forward biased
Depletion or Junction Capacitance
According to the definition:
C j  dQ
dVR V V
R Q
Actually this capacitance is similar to parallel plate capacitance.

s A s A
Cj  
W 2 s  1 1 
   (V0  VR )
q  N A NB 
C j0

 1  VR 
Where,  
 Vo 

  sq   N A NB   1 
C j0 A    
 2  A
N  N B   V0 
3
Depletion or Junction Capacitance
• A more general formula for depletion capacitance is :
C j0
Cj  m
1  VR 
 V0 

1 1
• Where m is called grading coefficient. m  3 ~ 2
1
• If the concentration changes sharply, m 
2
• Forward-bias condition, C j  2C j 0
• Reverse-bias condition, C j  Cd

4
Diffusion Capacitance
According to the definition:
Cd  dQ
dV Q

The charge stored in bulk region is obtained from below


equations:
Qp   p I p
Similarly for electron charge stored in the p region

Qn   n I n

The expression for diffusion capacitance:

 T 
Cd   I
 VT  5
Low Frequency Model
High Frequency Model
High Frequency Model
Problems

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