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CG2027 - Assign - 2 - Solution

This document contains the solutions to an assignment on transistor-level digital circuits. It examines the capacitance, resistance, propagation delay, and output voltages of basic circuit components like wires and inverters. For a wire segment between points A and B, it calculates a capacitance of 25.16fF and resistance of 40ohms. It then finds the IR drop and propagation delay for this wire. It also determines the output voltages for an NMOS inverter with pull-up resistor and a CMOS inverter under different input voltages.

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Peng Fei
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244 views2 pages

CG2027 - Assign - 2 - Solution

This document contains the solutions to an assignment on transistor-level digital circuits. It examines the capacitance, resistance, propagation delay, and output voltages of basic circuit components like wires and inverters. For a wire segment between points A and B, it calculates a capacitance of 25.16fF and resistance of 40ohms. It then finds the IR drop and propagation delay for this wire. It also determines the output voltages for an NMOS inverter with pull-up resistor and a CMOS inverter under different input voltages.

Uploaded by

Peng Fei
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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National University of Singapore

Electrical and Computer Engineering

CG2027 (Transistor-Level Digital Circuits)


Assignment #2 Solution
AY21/22 Semester 1
Issued: Aug. 17, 2021 Due: Aug. 22, 2021 (18:00)

Problem 1: Load Estimate (Capacitance and Resistance)

We assume a wire length of 200um, and width of 0.2um.

A B
Metal 0.2um
200um

a) Calculate the value of Cwire for the wire segment A to B of the metal. Assume area capacitance is 19
aF/um2, and fringe capacitance is 61 aF/um.

➔ Area Capacitance = ( 19 aF/um2 ) * 200 um * 0.2 um = 0.76 fF

Fringe Capacitance= ( 61 aF/um ) * 200 um * 2 = 24.4 fF

CTotal = CArea +CFringe = 0.76 fF + 24.4 fF = 25.16 fF.

b) Calculate the value of Rwire for the segment A to B. Assume the sheet resistance of the metal is given as
0.04/ㅁ.

➔ Wire Resistance = ( 0.04 ohm/ㅁ) *200 um / 0.2um = 40 ohm

Problem 2: Propagation Delay and IR Drop

a) For the wire given in Problem 1, assuming 4mA of current is flowing through the segment, what is the IR
drop?

➔ IR drop = 4mA * 40 ohm = 160 (mV)

b) If a voltage source with 50 output impedance is driving this wire segment, what is the propagation delay
tp?

➔ tp = 0.69RC = 0.69 * (50+40) ohm * 25.16*10-15 = 1.562 (ps) (5% difference allowed)
Problem 3: Inverter Output Voltage

We assume two inverters: (a) an NMOS inverter with pull-up resistor, and (b) a CMOS inverter, as shown
below. Assume the on resistance of all the transistors (M1-M3) is 10kΩ.

VDD=1V VDD=1V
Ron,M1 Ron,M2
=10kΩ =Ron,M3
RD=90kΩ M3 =10kΩ
Vout
Vin Vout
Vin
M1 CL
M2 CL

(a) NMOS inverter (b) CMOS inverter


with pull-up resistor

a) For the NMOS inverter shown in the figure 3 (a), what is the steady-state Vout value when Vin=0V and 1V,
respectively?

➔ When Vin =0V, M1 is turned off, and Vout is charged to VDD=1(V) through RD. Therefore, Vout=1(V).

➔ When Vin =1V, M1 is turned on, and a voltage divider is formed between RD (90kΩ) and Ron,M1 (10kΩ).
Therefore, Vout=1*(10k)/(10k+90k) = 0.1(V).

b) For the CMOS inverter shown in Fig. 3(b), what is the steady-state Vout value when Vin=0V and 1V,
respectively?

➔ Vin =0V, M2 is turned off, and Vout is charged to VDD=1(V) through M3. Therefore, Vout=1(V).

➔ Vin =1V, M3 is turned off, and Vout is discharged to GND through M2. Therefore, Vout=0 (V).

Note the output voltage of the CMOS inverter is independent of the on resistance of M2 and M3.

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