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Isc N-Channel MOSFET Transistor IRL530NS: Features

This document summarizes the specifications and features of an Isc N-Channel MOSFET transistor model IRL530NS. It includes the maximum ratings for voltage and current, thermal characteristics like thermal resistance, and electrical characteristics such as threshold voltage, on-resistance, and leakage currents. This transistor is intended for switching applications and features a low-profile D2PAK package, low input capacitance, and has been 100% avalanche tested for robust performance.

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97 views2 pages

Isc N-Channel MOSFET Transistor IRL530NS: Features

This document summarizes the specifications and features of an Isc N-Channel MOSFET transistor model IRL530NS. It includes the maximum ratings for voltage and current, thermal characteristics like thermal resistance, and electrical characteristics such as threshold voltage, on-resistance, and leakage currents. This transistor is intended for switching applications and features a low-profile D2PAK package, low input capacitance, and has been 100% avalanche tested for robust performance.

Uploaded by

Paulo Silva
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Isc N-Channel MOSFET Transistor IRL530NS

·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

·APPLICATIONS
·Switching applications

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VDSS Drain-Source Voltage 100 V

VGSS Gate-Source Voltage ±16 V

Drain Current-ContinuousTc=25℃ 17
ID A
Tc=100℃ 12

IDM Drain Current-Single Pulsed 60 A

PD Total Dissipation @TC=25℃ 79 W

Tch Max. Operating Junction Temperature 175 ℃

Tstg Storage Temperature -55~175 ℃

·THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth(ch-c) Channel-to-case thermal resistance 1.9 ℃/W

Rth(ch-a) Channel-to-ambient thermal resistance 40 ℃/W

isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark


Isc N-Channel MOSFET Transistor IRL530NS

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA 100 V

VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.25mA 1.0 2.0 V

RDS(on) Drain-Source On-Resistance VGS= 10V; ID=9A 100 mΩ

IGSS Gate-Source Leakage Current VGS= ±16V;VDS= 0V ±0.1 μA

VDS=100V; VGS= 0V;Tj=25℃ 25


IDSS Drain-Source Leakage Current μA
VDS=80V; VGS= 0V;Tj=125℃ 250

VSDF Diode forward voltage ISD=9.0A, VGS = 0 V 1.3 V

NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.

isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

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