Module 5

Transistors- Device Perspective

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 Operation of the npn transistor in the active mode

Figure 5.3 Current flow in an npn transistor biased to operate in the active mode. (Reverse
current components due to drift of thermally generated minority carriers are not shown.)2
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 Operation of the npn transistor in the active mode

Figure 5.4 Profiles of minority-carrier concentrations in the base and in the emitter of an npn
transistor operating in the active mode: VBE>0 and VCB ≥ 0. 3
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 Operation of the npn transistor in the active mode

Eqn. 1

np0 – thermal equilibrium value of the minority carrier (electron) concentration in the
base region

The electron diffusion current,

Eqn. 2

AE – cross sectional area of the base emitter region

q - Magnitude of the electron charge
Dn – electron diffusivity in the base
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Operation of the npn transistor in the active mode

The Collector current,

Eqn. 3

Eqn. 4

Sub

Eqn. 5

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 Operation of the npn transistor in the active mode

The Base current,

Eqn. 6

DP – Hole diffusivity in the emitter

Lp – Hole diffusion length in the emitter
ND – Doping concentration in the emitter

Eqn. 7

τb - Minority carrier life time

Qn – Minority carrier charge in the base region

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 Operation of the npn transistor in the active mode

The Base current,

Qn represented by the area of the triangle under the straight line distribution

Eqn. 8

Sub. Eqn .1 , and replace the value of np0

Eqn. 9

Sub. Eqn .9 ,in eqn 7

Eqn. 10

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 Operation of the npn transistor in the active mode

The Base current, add eqn 10 and Eqn 6

Eqn. 11

Comparing Eqn 3 and Eqn 11

Eqn. 12

Eqn. 13

Eqn. 14
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 Operation of the npn transistor in the active mode

The Collector Current

Eqn. 15

Use of Eqns 12 and 15

Eqn. 16

Eqn. 17

Alternatively, we can express Eqn. 16

Eqn. 18
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 Operation of the npn transistor in the active mode
The Collector Current

Eqn. 19

The emitter current equation in Eqn. 17 can be written

Eqn. 20

Finally, we can express β in terms of α, use Eqn. 19

Eqn. 21
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Structure of actual Transistor

Eqn. 22

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Structure of actual Transistor

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The Ebers – Moll (EM) Model

Eqn. 23
Eqn. 24

Eqn. 25

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 The Ebers – Moll (EM) Model

Eqn. 26

Eqn. 27

Sub. Eqn 26 and Eqn 27 in Eqns 23, 24 and 25

Eqn. 28

Eqn. 29

Eqn. 30
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 The Ebers – Moll (EM) Model

WKT

Eqn. 31

Eqn. 32

Eqn. 33

Eqn. 34

Eqn. 35
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The Ebers – Moll (EM) Model

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The pnp transistor

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The pnp transistor

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 Current – Voltage Characteristics
Circuit symbols and Conventions

Figure 5.13 Circuit symbols for BJTs.

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 Current – Voltage Characteristics
Circuit symbols and Conventions

Figure 5.14 Voltage polarities and current flow in transistors biased in the active mode.

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Graphical Representation of Transistor Characteristics

Figure 5.17 Effect of temperature on the iC–vBE characteristic. At a constant emitter current (broken line), vBE changes by –2 mV/C.

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Graphical Representation of Transistor Characteristics
The Common – Base Characteristics

Figure 5.18 The iC–vCB characteristics of an npn transistor.

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Graphical Representation of Transistor Characteristics
In Saturation region, Eber’s Moll equations can be used to obtain the following
expression

Eqn. 36

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Graphical Representation of Transistor Characteristics
Dependence of ic on the collector voltage – The Early Effect

Figure 5.19 (a) Conceptual circuit for measuring the iC –vCE characteristics of the BJT. (b) The iC –vCE characteristics of a practical BJT.
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Graphical Representation of Transistor Characteristics
Dependence of ic on the collector voltage – The Early Effect

Eqn. 37

Eqn. 38

Afrer, sub. ic

Eqn. 39

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Graphical Representation of Transistor Characteristics
Dependence of ic on the collector voltage – The Early Effect

Alternatively,

Eqn. 40

Eqn. 41

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Graphical Representation of Transistor Characteristics
Dependence of ic on the collector voltage – The Early Effect

Figure 5.20 Large-signal equivalent-circuit models of an npn BJT operating in the active mode in the common-emitter configuration.

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Graphical Representation of Transistor Characteristics
The Common – Emitter characteristics

Figure 5.21 Common-emitter characteristics. Note that the horizontal scale is expanded around the origin to show the saturation region in some
detail.

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Graphical Representation of Transistor Characteristics
The Common – Emitter characteristics

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Graphical Representation of Transistor Characteristics
The saturation voltage VCEsat and Saturation resistance RCEsat

Figure 5.22 Typical dependence of b on IC and on temperature in a modern integrated-circuit npn silicon transistor intended for operation
around 1 mA.

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Graphical Representation of Transistor Characteristics
The saturation voltage VCEsat and Saturation resistance RCEsat

Figure 5.23 An expanded view of the common-emitter characteristics in the saturation region.

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Graphical Representation of Transistor Characteristics
The saturation voltage VCEsat and Saturation resistance RCEsat

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Graphical Representation of Transistor Characteristics
The saturation voltage VCEsat and Saturation resistance RCEsat

Figure 5.24 (a) An npn transistor operated in saturation mode with a constant base current IB. (b) The iC–vCE characteristic curve corresponding to
iB = IB. The curve can be approximated by a straight line of slope 1/RCEsat. (c) Equivalent-circuit representation of the saturated transistor. (d) A
simplified equivalent-circuit model of the saturated transistor.

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MOSFET

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MOSFET

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 MOSFET

Figure The drain current iD versus the drain-to-source voltage vDS for an enhancement-type NMOS transistor operated with vGS > Vt.

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 MOSFET

Figure Increasing vDS causes the channel to acquire a tapered shape. Eventually, as vDS reaches vGS – Vt’ the channel is pinched off at the drain end.
Increasing vDS above vGS – Vt has little effect (theoretically, no effect) on the channel’s shape.

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MOSFET

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 MOSFET
Derivation of the iD – VDS relationship

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 MOSFET
Derivation of the iD – VDS relationship

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 MOSFET
Derivation of the iD – VDS relationship

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 MOSFET
Derivation of the iD – VDS relationship

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 MOSFET
Prob.

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 MOSFET
Prob.

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 MOSFET
Prob.

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 P-channel MOSFET

Figure Cross-section of a CMOS integrated circuit. Note that the PMOS transistor is formed in a separate n-type region, known as an n well.
Another arrangement is also possible in which an n-type body is used and the n device is formed in a p well. Not shown are the connections
made to the p-type body and to the n well; the latter functions as the body terminal for the p-channel device.

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 Circuit symbol

Figure (a) Circuit symbol for the n-channel enhancement-type MOSFET. (b) Modified circuit symbol with an arrowhead on the source
terminal to distinguish it from the drain and to indicate device polarity (i.e., n channel). (c) Simplified circuit symbol to be used when
the source is connected to the body or when the effect of the body on device operation is unimportant.

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The ID – VDS characteristics

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 The ID – VDS characteristics

Figure (a) An n-channel enhancement-type MOSFET with vGS and vDS applied and with the normal directions of
current flow indicated. (b) The iD–vDS characteristics for a device with k’n (W/L) = 1.0 mA/V2.
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The ID – VDS characteristics

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The ID – VDS characteristics

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The ID – VDS characteristics

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 The ID – VDS characteristics

Figure The iD–vGS characteristic for an enhancement-type NMOS transistor in saturation (Vt = 1 V, k’n W/L = 1.0 mA/V2).

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 ID – VDS characteristics

Figure Large-signal equivalent-circuit model of an n-channel MOSFET operating in the saturation

region.
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Figure The relative levels of the terminal voltages of the enhancement NMOS transistor for operation in the triode
region and in the saturation region.
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 Finite output resistance in saturation

Figure Increasing vDS beyond vDSsat causes the channel pinch-off point to move slightly away from the drain, thus
reducing the effective channel length (by DL).
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Finite output resistance in saturation

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Finite output resistance in saturation

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 Finite output resistance in saturation

Figure Effect of vDS on iD in the saturation region. The MOSFET parameter VA depends on the process technology and, for a given
process, is proportional to the channel length L.

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 Finite output resistance in saturation

Figure Large-signal equivalent circuit model of the n-channel MOSFET in saturation, incorporating the output resistance ro. The
output resistance models the linear dependence of iD on vDS and is given by Eq. (4.22).

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Finite output resistance in saturation
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-

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Finite output resistance in saturation

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 Characteristics of p - channel MOSFET

Figure (a) Circuit symbol for the p-channel enhancement-type MOSFET. (b) Modified symbol with an arrowhead on the source lead. (c)
Simplified circuit symbol for the case where the source is connected to the body. (d) The MOSFET with voltages applied and the
directions of current flow indicated. Note that vGS and vDS are negative and iD flows out of the drain terminal.

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Characteristics of p - channel MOSFET

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 Characteristics of p - channel MOSFET

Figure The relative levels of the terminal voltages of the enhancement-type PMOS transistor for operation in the triode region and in the
saturation region.

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