IKP20N60T, IKB20N60T

TrenchStop Series IKW20N60T

Low Loss DuoPack : IGBT in Trench and Fieldstop technology

with soft, fast recovery anti-parallel EmCon HE diode
C
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs G
• Designed for : E
- Frequency Converters
- Uninterrupted Power Supply
• Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution P-TO-247-3-1
(TO-220AC)
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI P-TO-220-3-1
(TO-220AB)
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package Ordering Code

IKP20N60T 600V 20A 1.5V 175°C K20T60 TO-220 Q67040S4715
IKB20N60T 600V 20A 1.5V 175°C K20T60 TO-263 Q67040S4713
IKW20N60T 600V 20A 1.5V 175°C K20T60 TO-247 Q67040S4716
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 600 V
DC collector current, limited by Tjmax IC A
TC = 25°C 40
TC = 100°C 20
Pulsed collector current, tp limited by Tjmax ICpuls 60
Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) - 60
Diode forward current, limited by Tjmax IF
TC = 25°C 40
TC = 100°C 20
Diode pulsed current, tp limited by Tjmax IFpuls 60
Gate-emitter voltage VGE ±20 V
1)
Short circuit withstand time tSC 5 µs
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
Power dissipation TC = 25°C Ptot 166 W
Operating junction temperature Tj -40...+175 °C
Storage temperature Tstg -55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260

1)
Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors 1 Rev. 2.2 Dec-04

 IKP20N60T, IKB20N60T
TrenchStop Series IKW20N60T
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance, RthJC TO-220-3-1 0.9 K/W
junction – case TO-247-3-1
TO-263-3-2
Diode thermal resistance, RthJCD TO-220-3-1 1.5
junction – case TO-247-3-1
TO-263-3-2
Thermal resistance, RthJA TO-220-3-1 62
junction – ambient TO-247-3-1 40
TO-263-3-2 (6cm² Cu) 40

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Value
Parameter Symbol Conditions Unit
min. Typ. max.
Static Characteristic
Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V, I C = 0. 2mA 600 - - V
Collector-emitter saturation voltage VCE(sat) V G E = 15V, I C = 20A
T j = 25° C - 1.5 2.05
T j = 17 5° C - 1.9 -
Diode forward voltage VF V G E = 0V, I F = 2 0 A
T j = 25° C - 1.65 2.05
T j = 17 5° C - 1.6 -
Gate-emitter threshold voltage VGE(th) I C = 29 0µ A, V C E =V G E 4.1 4.9 5.7
Zero gate voltage collector current ICES V C E = 600V , µA
V G E = 0V
T j = 25° C - - 40
T j = 17 5° C - - 1000
Gate-emitter leakage current IGES V C E = 0V ,V G E = 2 0V - - 100 nA
Transconductance gfs V C E = 20V, I C = 20A - 11 - S
Integrated gate resistor RGint - Ω

Power Semiconductors 2 Rev. 2.2 Dec-04

 IKP20N60T, IKB20N60T
TrenchStop Series IKW20N60T
Dynamic Characteristic
Input capacitance Ciss V C E = 25V, - 1100 - pF
Output capacitance Coss V G E = 0V, - 71 -
Reverse transfer capacitance Crss f= 1 M Hz - 32 -
Gate charge QGate V C C = 4 80V, I C = 20A - 120 - nC
V G E = 1 5V
Internal emitter inductance LE T O - 2 20-3- 1 - 7 - nH
measured 5mm (0.197 in.) from case T O - 2 47-3- 1
T O - 2 63-3- 2
1)
Short circuit collector current IC(SC) V G E = 1 5V,t S C ≤5µs - 183.3 - A
V C C = 400V,
T j ≤ 150° C

Switching Characteristic, Inductive Load, at Tj=25 °C

Value
Parameter Symbol Conditions Unit
min. Typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j = 25° C, - 18 - ns
Rise time tr V C C = 4 00V, I C = 20A, - 14 -
V G E = 0/ 1 5V ,
Turn-off delay time td(off) RG=12 Ω, - 199 -
Fall time tf L σ 2 ) = 131nH, - 42 -
Turn-on energy Eon C σ 2 ) =31pF - 0.31 - mJ
Energy losses include
Turn-off energy Eoff “tail” and diode - 0.46 -
Total switching energy Ets reverse recovery. - 0.77 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time trr T j = 25° C, - 41 - ns
Diode reverse recovery charge Qrr V R = 4 00V, I F = 2 0A , - 0.31 - µC
Diode peak reverse recovery current Irrm di F / dt = 88 0A / µs - 13.3 - A
Diode peak rate of fall of reverse di r r / d t - 711 - A/µs
recovery current during t b

1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2)
Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E.

Power Semiconductors 3 Rev. 2.2 Dec-04

 IKP20N60T, IKB20N60T
TrenchStop Series IKW20N60T

Switching Characteristic, Inductive Load, at Tj=175 °C

Value
Parameter Symbol Conditions Unit
min. Typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j = 17 5° C, - 18 - ns
Rise time tr V C C = 4 00V, I C = 20A, - 18 -
V G E = 0/ 1 5V ,
Turn-off delay time td(off) R G = 12 Ω - 223 -
Fall time tf L σ 1 ) = 131nH, - 76 -
Turn-on energy Eon C σ 1 ) =31pF - 0.51 - mJ
Energy losses include
Turn-off energy Eoff “tail” and diode - 0.64 -
Total switching energy Ets reverse recovery. - 1.15 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time trr T j = 17 5° C - 176 - ns
Diode reverse recovery charge Qrr V R = 4 00V, I F = 2 0A , - 1.46 - µC
Diode peak reverse recovery current Irrm di F / dt = 88 0A / µs - 18.9 - A
Diode peak rate of fall of reverse di r r / d t - 467 - A/µs
recovery current during t b

1)
Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E.

Power Semiconductors 4 Rev. 2.2 Dec-04

 IKP20N60T, IKB20N60T
TrenchStop Series IKW20N60T
t p=2µs
60A
10µs

50A 10A
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

T C =80°C
40A 50µs

T C =110°C
30A

1A
20A 1ms
Ic
10ms
DC
10A
Ic

0A
0.1A
10H z 100H z 1kH z 10kH z 100kH z
1V 10V 100V 1000V

f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of Figure 2. Safe operating area
switching frequency (D = 0, TC = 25°C, Tj ≤175°C;
(Tj ≤ 175°C, D = 0.5, VCE = 400V, VGE=15V)
VGE = 0/+15V, RG = 12Ω)

160W

30A
140W

25A
IC, COLLECTOR CURRENT
POWER DISSIPATION

120W

100W 20A

80W
15A

60W
10A
Ptot,

40W
5A
20W

0A
0W
25°C 50°C 75°C 100°C 125°C 150°C 25°C 75°C 125°C

TC, CASE TEMPERATURE TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function of Figure 4. Collector current as a function of
case temperature case temperature
(Tj ≤ 175°C) (VGE ≥ 15V, Tj ≤ 175°C)

Power Semiconductors 5 Rev. 2.2 Dec-04

 IKP20N60T, IKB20N60T
TrenchStop Series IKW20N60T

50A 50A
V GE =20V
V GE =20V
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

40A 40A 15V
15V
13V
13V
30A 30A 11V
11V
9V 9V

20A 20A 7V
7V

10A 10A

0A 0A
0V 1V 2V 3V 0V 1V 2V 3V 4V

VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic Figure 6. Typical output characteristic
(Tj = 25°C) (Tj = 175°C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE

35A
2.5V IC =40A
30A
IC, COLLECTOR CURRENT

2.0V
25A

20A 1.5V IC =20A

15A IC =10A
1.0V

10A
T J = 1 7 5 °C
0.5V
5A 2 5 °C

0A 0.0V
0V 2V 4V 6V 8V 0°C 50°C 100°C 150°C

VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter
(VCE=10V) saturation voltage as a function of
junction temperature
(VGE = 15V)

Power Semiconductors 6 Rev. 2.2 Dec-04

 IKP20N60T, IKB20N60T
TrenchStop Series IKW20N60T

t d(off)
t d(off)

100ns
t, SWITCHING TIMES

t, SWITCHING TIMES
tf

t d(on) 100ns tf

10ns

t d(on)

tr

tr
1ns 10ns
0A 5A 10A 15A 20A 25A 30A 35A 10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 9. Typical switching times as a Figure 10. Typical switching times as a
function of collector current function of gate resistor
(inductive load, TJ=175°C, (inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 12Ω, VCE= 400V, VGE = 0/15V, IC = 20A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

7V

6V
VGE(th), GATE-EMITT TRSHOLD VOLTAGE

t d(off) m ax.
typ.
5V
100ns
t, SWITCHING TIMES

4V m in.
tf
3V

2V
t d(on)

1V
tr
10ns 0V
25°C 50°C 75°C 100°C 125°C 150°C -50°C 0°C 50°C 100°C 150°C

TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a Figure 12. Gate-emitter threshold voltage as
function of junction temperature a function of junction temperature
(inductive load, VCE = 400V, (IC = 0.29mA)
VGE = 0/15V, IC = 20A, RG=12Ω,
Dynamic test circuit in Figure E)

Power Semiconductors 7 Rev. 2.2 Dec-04

 IKP20N60T, IKB20N60T
TrenchStop Series IKW20N60T
*) Eon and Ets include losses *) E on a nd E ts include losses
2.4mJ Ets* 2.4m J
due to diode recovery
d ue to diode re co ve ry
E ts *
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

2.0mJ 2.0m J

1.6mJ 1.6m J
E off

1.2mJ 1.2m J

Eoff
0.8mJ 0.8m J

0.4mJ 0.4m J E on *
Eon*
0.0mJ 0.0m J
0A 5A 10A 15A 20A 25A 30A 35A 0Ω 15Ω 30Ω 45Ω 60Ω

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 13. Typical switching energy losses Figure 14. Typical switching energy losses
as a function of collector current as a function of gate resistor
(inductive load, TJ = 175°C, (inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 12Ω, VCE = 400V, VGE = 0/15V, IC = 20A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

*) Eon and Ets include losses 2.0m J

due to diode recovery *) E on and E ts include losses
Ets* 1.8m J
1.0mJ due to diode recovery
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

1.6m J

0.8mJ 1.4m J

1.2m J

0.6mJ 1.0m J E ts *
Eoff
0.8m J E off
0.4mJ
0.6m J
Eon* 0.4m J
0.2mJ E on *

0.2m J

0.0mJ 0.0m J
25°C 50°C 75°C 100°C 125°C 150°C 300V 350V 400V 450V 500V 550V

TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 15. Typical switching energy losses Figure 16. Typical switching energy losses
as a function of junction as a function of collector emitter
temperature voltage
(inductive load, VCE = 400V, (inductive load, TJ = 175°C,
VGE = 0/15V, IC = 20A, RG = 12Ω, VGE = 0/15V, IC = 20A, RG = 12Ω,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

Power Semiconductors 8 Rev. 2.2 Dec-04

 IKP20N60T, IKB20N60T
TrenchStop Series IKW20N60T

1nF
C iss
VGE, GATE-EMITTER VOLTAGE

1 5V

c, CAPACITANCE
1 20V
4 80V
1 0V
100pF
C oss

5V C rss

0V 10pF
0nC 30n C 6 0nC 9 0nC 120 nC 0V 10V 20V 30V 40V

QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge Figure 18. Typical capacitance as a function
(IC=20 A) of collector-emitter voltage
(VGE=0V, f = 1 MHz)

12µs
IC(sc), short circuit COLLECTOR CURRENT

300A
SHORT CIRCUIT WITHSTAND TIME

10µs
250A
8µs
200A
6µs
150A
4µs
100A

2µs
tSC,

50A

0µs
0A 10V 11V 12V 13V 14V
12V 14V 16V 18V

VGE, GATE-EMITTETR VOLTAGE VGE, GATE-EMITETR VOLTAGE

Figure 19. Typical short circuit collector Figure 20. Short circuit withstand time as a
current as a function of gate- function of gate-emitter voltage
emitter voltage (VCE=600V, start at TJ=25°C,
(VCE ≤ 400V, Tj ≤ 150°C) TJmax<150°C)

Power Semiconductors 9 Rev. 2.2 Dec-04

 IKP20N60T, IKB20N60T
TrenchStop Series IKW20N60T

D=0.5 0
10 K/W D=0.5
ZthJC, TRANSIENT THERMAL RESISTANCE

ZthJC, TRANSIENT THERMAL RESISTANCE

0.2
0.2
R,(K/W) τ, (s)
-1 0.1 0.13483 9.207*10
-2
6
10 K/W -2
R,(K/W) τ, (s) 0.1 0.58146 1.821*10
0.05 0.18715 6.925*10
-2
0.44456 1.47*10
-3

-2 -4
0.31990 1.085*10 -1
0.33997 1.254*10
0.30709 6.791*10
-4 10 K/W R1 R2
-5
0.05
0.07041 9.59*10
0.02 R1 R2
0.02
C1= τ1/R1 C2=τ2/R2
-2 0.01 0.01
10 K/W
C1= τ1/R1 C2=τ2/R2 single pulse
single pulse

-2
10 K/W
1µs 10µs 100µs 1ms 10ms 100ms 1µs 10µs 100µs 1ms 10ms 100ms
tP, PULSE WIDTH tP, PULSE WIDTH
Figure 21. IGBT transient thermal resistance Figure 22. Diode transient thermal
(D = tp / T) impedance as a function of pulse
width
(D=tP/T)

1.8µC

1.6µC T J =175°C
250ns
Qrr, REVERSE RECOVERY CHARGE

1.4µC
trr, REVERSE RECOVERY TIME

200ns 1.2µC

1.0µC
150ns TJ=175°C
0.8µC T J =25°C

100ns
0.6µC

0.4µC
50ns
TJ=25°C
0.2µC

0ns 600A/µs 900A/µs 1200A/µs

600A/µs 900A/µs 1200A/µs
diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as Figure 24. Typical reverse recovery charge
a function of diode current slope as a function of diode current
(VR=400V, IF=20A, slope
Dynamic test circuit in Figure E) (VR = 400V, IF = 20A,
Dynamic test circuit in Figure E)

Power Semiconductors 10 Rev. 2.2 Dec-04

 IKP20N60T, IKB20N60T
TrenchStop Series IKW20N60T

T J =175°C
24A -750A/µs
T J=25°C

OF REVERSE RECOVERY CURRENT

REVERSE RECOVERY CURRENT

dirr/dt, DIODE PEAK RATE OF FALL

20A
-600A/µs

16A
T J =25°C -450A/µs

12A T J=175°C

-300A/µs
8A

-150A/µs
4A
Irr,

0A 0A/µs
600A/µs 900A/µs 1200A/µs 600A/µs 900A/µs 1200A/µs

diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current Figure 26. Typical diode peak rate of fall of
as a function of diode current reverse recovery current as a
slope function of diode current slope
(VR = 400V, IF = 20A, (VR=400V, IF=20A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

50A T J =25°C I F =40A

2.0V
175°C
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT

40A
1.5V 20A

30A
10A
1.0V
20A

0.5V
10A

0A 0.0V
0V 1V 2V 0°C 50°C 100°C 150°C

VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATURE

Figure 27. Typical diode forward current as Figure 28. Typical diode forward voltage as a
a function of forward voltage function of junction temperature

Power Semiconductors 11 Rev. 2.2 Dec-04

 IKP20N60T, IKB20N60T
TrenchStop Series IKW20N60T
TO-220AB Dimensions
symbol [mm] [inch]
min max min Max
A 9.70 10.30 0.3819 0.4055
B 14.88 15.95 0.5858 0.6280
C 0.65 0.86 0.0256 0.0339
D 3.55 3.7 0.1398 0.1457
E 2.60 3.00 0.1024 0.1181
F 6.00 6.80 0.2362 0.2677
G 13.00 14.00 0.5118 0.5512
H 4.35 4.75 0.1713 0.1870
K 0.38 0.65 0.0150 0.0256
L 0.95 1.32 0.0374 0.0520
M 2.54 typ. 0.1 typ.
N 4.30 4.50 0.1693 0.1772
P 1.17 1.40 0.0461 0.0551
T 2.30 2.72 0.0906 0.1071

TO-263AB (D2Pak) dimensions

symbol [mm] [inch]
min max min max
A 9.80 10.20 0.3858 0.4016
B 0.70 1.30 0.0276 0.0512
C 1.00 1.60 0.0394 0.0630
D 1.03 1.07 0.0406 0.0421
E 2.54 typ. 0.1 typ.
F 0.65 0.85 0.0256 0.0335
G 5.08 typ. 0.2 typ.
H 4.30 4.50 0.1693 0.1772
K 1.17 1.37 0.0461 0.0539
L 9.05 9.45 0.3563 0.3720
M 2.30 2.50 0.0906 0.0984
N 15 typ. 0.5906 typ.
P 0.00 0.20 0.0000 0.0079
Q 4.20 5.20 0.1654 0.2047
R 8° max 8° max
S 2.40 3.00 0.0945 0.1181
T 0.40 0.60 0.0157 0.0236
U 10.80 0.4252
V 1.15 0.0453
W 6.23 0.2453
X 4.60 0.1811
Y 9.40 0.3701
Z 16.15 0.6358

Power Semiconductors 12 Rev. 2.2 Dec-04

 IKP20N60T, IKB20N60T
TrenchStop Series IKW20N60T

TO-247AC dimensions
symbol [mm] [inch]
min max min max
A 4.78 5.28 0.1882 0.2079
B 2.29 2.51 0.0902 0.0988
C 1.78 2.29 0.0701 0.0902
D 1.09 1.32 0.0429 0.0520
E 1.73 2.06 0.0681 0.0811
F 2.67 3.18 0.1051 0.1252
G 0.76 max 0.0299 max
H 20.80 21.16 0.8189 0.8331
K 15.65 16.15 0.6161 0.6358
L 5.21 5.72 0.2051 0.2252
M 19.81 20.68 0.7799 0.8142
N 3.560 4.930 0.1402 0.1941
∅P 3.61 0.1421
Q 6.12 6.22 0.2409 0.2449

Power Semiconductors 13 Rev. 2.2 Dec-04

 IKP20N60T, IKB20N60T
TrenchStop Series IKW20N60T
i,v

diF /dt tr r =tS +tF

Qr r =QS +QF

tr r
IF tS tF

QS QF 10% Ir r m t
Ir r m
dir r /dt VR
90% Ir r m

Figure C. Definition of diodes

switching characteristics

τ1 τ2 τn
r1 r2 rn
Tj (t)

p(t)
r1 r2 rn

Figure A. Definition of switching times

TC

Figure D. Thermal equivalent

circuit

Figure B. Definition of switching losses Figure E. Dynamic test circuit

Power Semiconductors 14 Rev. 2.2 Dec-04

 IKP20N60T, IKB20N60T
TrenchStop Series IKW20N60T
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2004
All Rights Reserved.

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or
systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Power Semiconductors 15 Rev. 2.2 Dec-04