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Assignment-Module 1

This document contains 11 questions about semiconductor devices and circuits: 1. It asks to explain intrinsic and extrinsic semiconductors and the V-I characteristics of a p-n junction diode. 2. It asks to discuss avalanche and Zener breakdown mechanisms and their differences. 3. It asks to design a Zener regulator circuit to provide 5V output from a 25V input. The remaining questions ask to determine output waveforms for clipper and clamper circuits, explain a full-wave rectifier circuit, and calculate values for rectifier circuits and carrier concentrations in semiconductors.

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الجيش اليمنى الالكترونى Yemen
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29 views

Assignment-Module 1

This document contains 11 questions about semiconductor devices and circuits: 1. It asks to explain intrinsic and extrinsic semiconductors and the V-I characteristics of a p-n junction diode. 2. It asks to discuss avalanche and Zener breakdown mechanisms and their differences. 3. It asks to design a Zener regulator circuit to provide 5V output from a 25V input. The remaining questions ask to determine output waveforms for clipper and clamper circuits, explain a full-wave rectifier circuit, and calculate values for rectifier circuits and carrier concentrations in semiconductors.

Uploaded by

الجيش اليمنى الالكترونى Yemen
Copyright
© © All Rights Reserved
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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Assignment-Module 1

1. What do you mean by a semiconductor? Explain in brief about intrinsic and


extrinsic semiconductor.

2. With the help of the diode equation, explain the V-I characteristics of p-n
junction.
3. Discuss avalanche and Zener Breakdown mechanism along with the major
differences between them
4. Design the Zener regulator for the following specifications - Output voltage =
5V, Load current = 20ma, Zener wattage = 500mW, Input voltage = 25V.
5. For the following clipper circuit, determine Vo and sketch output waveform if Si
diode is used

6. Draw the output waveform for the following clamper circuit.

7. Draw and explain the working of bridge type F.W.R with necessary
waveforms. Derive the expression for Idc and η.
8. A crystal diode having internal resistance rf = 20Ω is used for half-wave
rectification. If the applied voltage v = 50 sin ω t and load resistance RL= 800 Ω,
find
(i) Im, Idc, Irms (ii) a.c. power input and d.c. power output (iii) d.c. output voltage (iv)
efficiency of rectification.
9. An a.c. supply of 230 V is applied to a half-wave rectifier circuit through a
transformer of turn ratio 10 : 1. Find (i) the output d.c. voltage and (ii) the peak
inverse voltage. Assume the diode to be ideal.
10. Determine the concentration of free electrons and holes in a sample of Ge at
3000K which has a concentration of donor atoms equal to 2 X 1014 atoms/cm3 and a
concentration of acceptor atoms = 3 X 10 14 atom/cm3. Is this p-type or n-type
Germanium?
11. In an intrinsic semiconductor, the number of conduction electrons is 7×
19 3
10 m . Find the total number of current carriers in the same semiconductor of
size 1 cm × 1 cm × 1 mm.

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