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Vlsi Important Questions

The document outlines important questions about VLSI (Very Large Scale Integration) across 5 units. Unit 1 covers NMOS and CMOS fabrication processes and comparing the technologies. Unit 2 derives relationships for NMOS transistors and describes inverter operations. Unit 3 focuses on developing layouts and explaining design rules. Unit 4 discusses scaling factors, CMOS logic forms, and a dynamic shift register. Unit 5 is about FPGA and ASIC design flows, clocking mechanisms, and mixed signal design.

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Sowmya Chowdary
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11K views2 pages

Vlsi Important Questions

The document outlines important questions about VLSI (Very Large Scale Integration) across 5 units. Unit 1 covers NMOS and CMOS fabrication processes and comparing the technologies. Unit 2 derives relationships for NMOS transistors and describes inverter operations. Unit 3 focuses on developing layouts and explaining design rules. Unit 4 discusses scaling factors, CMOS logic forms, and a dynamic shift register. Unit 5 is about FPGA and ASIC design flows, clocking mechanisms, and mixed signal design.

Uploaded by

Sowmya Chowdary
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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VLSI IMPORTANT QUESTIONS

UNIT 1:
1. Explain the operation of enhancement type NMOS transistor.
2. Explain the IC production process in detail.
3. Explain the NMOS fabrication process with necessary diagrams.
4. Explain the CMOS n-well fabrication process with necessary diagrams.
5. Compare CMOS and bipolar technologies.
6. Explain about BiCMOS fabrication process.
UNIT 2:
1. Derive the relationship between IDS & VDS for NMOS transistor.
2. Describe the operation and transfer characteristics of NMOS inverter.
3. Describe the operation and transfer characteristics of CMOS inverter.
4. Derive pull up to pull down ratio for a NMOS inverter driven by another NMOS inverter.
5. Derive pull up to pull down ratio for a NMOS inverter driven through two or more pass
transistors.
6. Explain the operation of BiCMOS inverter with necessary circuit diagrams
7. Describe about different forms for pull up.
UNIT 3:
1. Develop stick diagram and layout for given NMOS circuit
2. Develop stick diagram and layout for given CMOS circuit
3. Explain about lambda based design rules
4. Explain about 2μm Double Metal, Double Poly, CMOS/BiCMOS rules
5. Describe about 1.2μmDouble Metal, Double Poly CMOS rules
6. How Sheet Resistance concept applied to MOS transistors and Inverters?
7. Describe about delay unit and calculate inverter delays
8. Explain about wiring capacitance
9. Realize NAND,NOR and inverter using NMOS, PMOS and CMOS technology.
UNIT 4:
1. Derive scaling factors for different device parameters.
2. Explain different forms of CMOS logic.
3. Describe about two phase clocking
4. Describe the operation of 4-bit CMOS dynamic shift register with neat diagram.
5. Explain about switch logic.
6. Illustrate about architectural issues.
UNIT 5:
1. Explain FPGA design flow
2. Explain ASIC design flow
3. Describe about clocking mechanisms
4. Explain VLSI design issues and trends
5. Explain about the basic architecture of FPGA.
6. Explain about mixed signal design.

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