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    TOBB ETU Department of ELE ELE 224L Electronic Circuits Experiment 4 - MOSFET Circuits

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    Bugrahan Ustundag
    This document provides instructions for an experiment involving MOSFET circuits. The experiment has two parts: 1) Measuring the I-V characteristics of a MOSFET, determining the threshold voltage VTH and plotting the curves. 2) Constructing a CMOS inverter circuit and measuring the input-output voltage relationship, observing it operates as a logic inverter. Signals will also be applied and observed on an oscilloscope. 3) Increasing the frequency of the input signal to observe any differences in the output. Screenshots of the oscilloscope will be submitted with the report.

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    TOBB ETU Department of ELE ELE 224L Electronic Circuits Experiment 4 - MOSFET Circuits

    Uploaded by

    Bugrahan Ustundag
    50 views5 pages
    This document provides instructions for an experiment involving MOSFET circuits. The experiment has two parts: 1) Measuring the I-V characteristics of a MOSFET, determining the threshold voltage VTH and plotting the curves. 2) Constructing a CMOS inverter circuit and measuring the input-output voltage relationship, observing it operates as a logic inverter. Signals will also be applied and observed on an oscilloscope. 3) Increasing the frequency of the input signal to observe any differences in the output. Screenshots of the oscilloscope will be submitted with the report.

    Original Description:

    EE224 LAB Experiment4 sheet

    Original Title

    Experiment4_TOBB ETÜ_EE224

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    This document provides instructions for an experiment involving MOSFET circuits. The experiment has two parts: 1) Measuring the I-V characteristics of a MOSFET, determining the threshold voltage VTH and plotting the curves. 2) Constructing a CMOS inverter circuit and measuring the input-output voltage relationship, observing it operates as a logic inverter. Signals will also be applied and observed on an oscilloscope. 3) Increasing the frequency of the input signal to observe any differences in the output. Screenshots of the oscilloscope will be submitted with the report.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    50 views5 pages

    TOBB ETU Department of ELE ELE 224L Electronic Circuits Experiment 4 - MOSFET Circuits

    Uploaded by

    Bugrahan Ustundag
    This document provides instructions for an experiment involving MOSFET circuits. The experiment has two parts: 1) Measuring the I-V characteristics of a MOSFET, determining the threshold voltage VTH and plotting the curves. 2) Constructing a CMOS inverter circuit and measuring the input-output voltage relationship, observing it operates as a logic inverter. Signals will also be applied and observed on an oscilloscope. 3) Increasing the frequency of the input signal to observe any differences in the output. Screenshots of the oscilloscope will be submitted with the report.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 5

    Name Surname:

    ID:

    TOBB ETU Department of ELE


    ELE 224L Electronic Circuits
    Experiment 4 – MOSFET Circuits
    PURPOSE:

     The purpose of this experiment is learning the operation principle of MOSFETs and
    understanding DC biasing methods of MOSFET circuits. In addition, you will see an example of
    CMOS logic.
     Do not forget to submit your oscilloscope screenshots to the course assistants with the report.

    EXPERIMENT:
    1. Voltage-Current characteristic of MOSFET: Construct the circuit given in Figure 1 by using
    RG1 = 100kΩ and RG2 = 27kΩ.

    Figure 1: MOSFET circuit

    a) Apply a constant 5V to VDD and apply an adjustable voltage to VGG from the voltage source.

     Make the measurement according to Table 1 and plot IDS – VGS characteristics. Voltage
    source, used for VDD, can be used as an ammeter with 10mA resolution. However, be careful
    not to exceed the maximum continuous drain current that your MOSFET can handle.
     Measure VTH voltage and calculate KN values of the MOSFET.

    Table 1: ID vs. VGS measurements of MOSFET

    IDS (mA) 0 10 20 50 100


    VGS (V) 0 VTH=__ 3 4 5

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    Figure 2: ID - VGS characteristics of MOSFET

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    b) For this time hold the value of VGS - VTH on 0.5V, 1V and 2V constant values, respectively.
     Make the measeruments to complete Table 2 and plot ID – VDS curves onto Figure 3.
     Determine the region that transistor operates on Figure 3.

    Table 2: ID - VDS characteristics of MOSFET for different VGS voltages

    VGS-VTH VDS (V) 0 0.2 0.5 1 2 3 4 5 6 8 10


    0.5V ID (mA)
    1V ID (mA)
    2V ID (mA)

    Figure 3: ID-VDS characteristics of MOSFET for different VGS voltages

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    2. Construct the circuit given in Figure 4.


    a) Apply 5V to VDD to find VI and VO voltage curve.
     Adjust VI voltage from 0V to 5V range and measure the VO voltage to fill Table 3.
     Plot VI-VO curve onto Figure 5 and show the operation regions of MOSFETs for each.
    What logic operation does the circuit do?

    Table 3:VI - VO characteristics

    VI (V) 0 1 1.5 1.75 2 2.25 2.5 2.75 3 4 5


    VO (V)

    Figure 4: A MOSFET circuit

    Figure 5: VI - VO characteristics

    b) Apply 2.5 + 2.5sin(2πft) V sinusoidal voltage at 1KHz frequency by signal generator. Use
    “Offset” property of signal generator and do not forget to check the signals voltage level by
    oscillator.
     Change (increase or decrease) the offset value and observe the changes for output voltage.
     Using display menu of oscilloscope observe VI vs. VO curve and plot on Figure 7.
     Increase the frequency of the signal, observe and note down the difference if any occurs.

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    Figure 6: Time vs. VI and VO signals

    Figure 7: VI-VO characteristics observed by oscillator

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