P1260ATF

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID

600V 0.65Ω @VGS = 10V 12A

TO-220F

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS 600
V
Gate-Source Voltage VGS ±30
TC = 25 °C 12
Continuous Drain Current2 ID
TC = 100 °C 8.5
1, 2
A
Pulsed Drain Current IDM 48
Avalanche Current3 IAS 7.4
3 EAS
Avalanche Energy L = 10mH 277 mJ
TC = 25 °C 50
Power DissipationA PD W
TC = 100 °C 20
Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case RqJC 0.56
°C / W
Junction-to-Ambient RqJA 62.5
1
Pulse width limited by maximum junction temperature.
2
Limited only by maximum temperature allowed.
3
VDD = 60V , Starting TJ = 25°C

Ver 1.0 1 2012/4/16

P1260ATF
N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 600
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 2.5 4.5
Gate-Body Leakage IGSS VDS = 0V, VGS = ±30V ±100 nA
VDS = 600V, VGS = 0V, TC = 25 °C 25
Zero Gate Voltage Drain Current IDSS mA
VDS = 600V, VGS = 0V , TC = 100 °C 250
Drain-Source On-State
RDS(ON) VGS = 10V, ID = 6A 0.475 0.650 Ω
Resistance1
Forward Transconductance1 gfs VDS = 40V, ID = 6A 16 S
DYNAMIC
Input Capacitance Ciss 2290
Output Capacitance Coss VGS = 0V, VDS = 25V, f = 1MHz 281 pF
Reverse Transfer Capacitance Crss 46
2 Qg
Total Gate Charge 46.5
2 Qgs VDS = 300V, VGS = 10V, ID = 6A
Gate-Source Charge 10 nC
2 Qgd
Gate-Drain Charge 16.1
2 td(on)
Turn-On Delay Time 35
2 tr
Rise Time 120
2
VDD = 300V, ID = 6A, RG = 25Ω nS
Turn-Off Delay Time td(off) 115
Fall Time2 tf 90
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3 IS 12 A
1 VSD IF = 8A, VGS = 0V
Forward Voltage 1.4 V
Reverse Recovery Time trr 420 nS
IF = 12A, dlF/dt = 100A / μS, VGS = 0V
Reverse Recovery Charge Qrr 4.7 nC
1
Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
2
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.

Ver 1.0 2 2012/4/16

P1260ATF
N-Channel Enhancement Mode MOSFET

Ver 1.0 3 2012/4/16

P1260ATF
N-Channel Enhancement Mode MOSFET

Ver 1.0 4 2012/4/16

P1260ATF
N-Channel Enhancement Mode MOSFET

Ver 1.0 5 2012/4/16