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2N3553 Silicon NPN Transistor RF Power Driver: Absolute Maximum Ratings

The 2N3553 is a silicon NPN transistor designed for use as an output, driver, or predriver stage in VHF equipment operating at up to 175MHz. It is specified to deliver a minimum of 2.5W of output power with a gain of at least 10dB and 50% efficiency. The transistor has absolute maximum ratings of 40V for collector-emitter voltage, 65V for collector-base voltage, and 4V for emitter-base voltage.

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104 views2 pages

2N3553 Silicon NPN Transistor RF Power Driver: Absolute Maximum Ratings

The 2N3553 is a silicon NPN transistor designed for use as an output, driver, or predriver stage in VHF equipment operating at up to 175MHz. It is specified to deliver a minimum of 2.5W of output power with a gain of at least 10dB and 50% efficiency. The transistor has absolute maximum ratings of 40V for collector-emitter voltage, 65V for collector-base voltage, and 4V for emitter-base voltage.

Uploaded by

Ahmad Aftal
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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2N3553

2N3553
Silicon NPN Transistor
RF Power Driver
Description:
The 2N3553 is a silicon NPN transistor in a TO39 type
package designed for amplifier and oscillator
applications in military and industrial equipment.
Suitable for use as an output, driver, or in predriver
stages in VHF equipment.

WINTransceiver C B E

Features:

● Specified 175MHz, 28V Characteristics:


Output Power: 2.5W
Minimum Gain: 10dB
Efficiency: 50%

Absolute Maximum Ratings:


Collector-Emitter Voltage, VCEO 40V
Collector-Base Voltage, VCB, VDG2 65V
Emitter-Base Voltage, VEB, VDG2 4V
Collector Current, IC 1A
Total Device Dissipation (TC = +25°C), PD 7W
Derate above 25°C 40mW/°C
Operating Junction Temperature Range, TJ -65° to +200°C
Storage Temperature Range, Tstg -65° to +200°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)

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2N3553

Parameter Symbol Test Conditions Min Typ Max Unit


OFF Characteristics
Collector-Emitter Sustaining Voltage VCEO(sus) IC = 200mA, IB = 0, Note 1 40 - - V
Voltage
Emitter-Base Breakdown Voltage V(BR)EBO IE = 0.1mA, IC = 0 4 - - V
Collector Cutoff Current ICEO VCE = 30V, IB = 0 - - 0.1 mA
ICEX VCE = 30V, VBE(off) = 1.5V, TC = - - 5.0 mA
+200°C
VCE = 65V, VBE(off) = 1.5V - - 1.0 mA
Emitter Cutoff Current IEBO VBE = 4V, IC = 0 - - 0.1 mA
ON Characteristics
DC Current Gain hFE VCE = 5V, IC = 5V 10 - -
Collector-Emitter Saturation Voltage VCE(sat) IC = 250mA, IB = 50mA - - 1.0 V
Dynamic Characteristics
Current Gain-Bandwidth Product fT VCE = 28V, IC = 100mA, f = 100MHz - 500 - MHz
Output Capacitance Cob VCB = 30V, IE = 0, f = 100kHz - 8 10 pF
Functional Tests
Power Input Pin VCE = 28V, Pout = 2.5W, f = 175MHz - - 0.25 W
Common-Emitter Amplifier Power Gain Gpe 10 - - dB
Collector Efficiency 50 - - %

Note 1. Pulsed through a 25mH inductor.

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