Vol.5.

ROHM SPICE Models

① A total of 4,883* models have been uploaded covering a wide range of products, from ICs to discretes

Products list* ■ ICs 2,250products

■ Discretes 2,633products (Power Devices, Transistors, Diodes, LEDs, etc...)

*October 2018 ROHM study

② SPICE models are stored in one place, making it possible to download files in 3 easy steps

Cadence's Website : PSpice.com

PSpice, one of the mainstream or CAD products,
is an industry-learning circuit simulation and
validation solution that enables continuous
ROHM page in PSpice
operation throughout Cadence's entire PCD http://www.pspice.com/
design flow. models/rohm

1) The information contained in this document is current as of October 1st, 2018.

2) The information contained herein is subject to change without notice. Before you use our Products, please contact our sales representative (as listed below) and verify the latest specifications.
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure,
please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any
damages arising out of the use of our Products beyond the rating specified by ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products.The peripheral conditions must be taken into account
when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise
intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative: transportation equipment (i.e. cars, ships, trains), primary communication
equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensure the accuracy of the information contained in this document. However, ROHM does not warrant that such information is error-free and ROHM shall have no responsibility for any damages
arising from any inaccuracy or misprint of such information.
11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office as listed below.
ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the
US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act.
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM.

R1098A

Santa Clara +1-408-720-1900 Stuttgart +49-711-7272370 Dalian +86-411-8230-8549 Malaysia +60-3-7931-8155

Atlanta +1-770-754-5972 Nuremberg +49-911-810452-26 Beijing +86-10-8525-2483 India +91-80-4125-0811
Boston +1-781-565-1138 France +33 (0) 1 40 60 87 30 Shanghai +86-21-6072-8612 Kyoto +81-75-365-1077
Chicago +1-847-368-1006 United Kingdom +44-1-908-272400 Shenzhen +86-755-8307-3008 Yokohama +81-45-476-2121
Detroit +1-248-348-9920 Finland +358-400-726 124 Hong Kong +852-2740-6262
San Diego +1-858-625-3600 Spain +34-9375-24320 Taiwan +886-2-2500-6956
Mexico +52-33-3123-2001 Hungary +36-1-950-5859 Singapore +65-6436-5100
Brazil +55-11-3539-6320 Italy +39-039-5783432 Philippines +63-2-807-6872
Germany +49-2154-921-0 Seoul +82-2-8182-700 Thailand +66-2-254-4890
No.61P7165E 11.2018 6500SG
 Table of Contents

SiC. SiC Power Devices P.05 to P.09

A next-generation semiconductor that traveled

Peripheral SiC ICs P.10 to P.12

IPMs
4.6 billion years to get here. (Intelligent Power Modules)
P.13 to P.14

IGBTs
(Insulated Gate Bipolar Transistor) P.15 to P.16
High Withstand Voltage
Discretes P.17 to P.22

Resistors for
Current Detection P.23 to P.24
Vertically Integrated
Production System P.25 to P.26
History of SiC Device
Development P.27 to P.28

ROHM Group Locations P.29

The latent power of SiC is brought to life through our passionate engineers.
Extremely rare in nature, naturally occurring SiC was first discovered in trace amounts in meteorites dating back over 4.6 billion years ago, much
older than our solar system.
Eventually, it became possible to synthesize SiC with superior semiconductor properties. But the process proved to be extremely difficult, with
several obstacles that hampered mass production and baffled even the top researchers in the world.
ROHM began pioneering the mass production of SiC power devices in the 1990s.
At the time, high-quality SiC wafers were quite scarce, and in the absence of a well-equipped research environment, ROHM went on daily
excursions to research facilities through-out the country to conduct experiments.
But ROHM engineers continued to persevere, and even as the state of the global economy worsened they dedicated themselves to im-proving the
production line and creating original testing methodology while increasing processing accuracy, culminating in the world’s first successful mass
production of SiC DMOS in 2010.
This moment was a perfect example of passion coming to fruition for the betterment of society.
ROHM will continue to meet new challenges. As a leader in SiC power devices, we are committed to reaching even higher standards of quality
and expanding research over a broad range of fields.

01 Power Device 02
 Table of Contents

SiC. SiC Power Devices P.05 to P.09

A next-generation semiconductor that traveled

Peripheral SiC ICs P.10 to P.12

IPMs
4.6 billion years to get here. (Intelligent Power Modules)
P.13 to P.14

IGBTs
(Insulated Gate Bipolar Transistor) P.15 to P.16
High Withstand Voltage
Discretes P.17 to P.22

Resistors for
Current Detection P.23 to P.24
Vertically Integrated
Production System P.25 to P.26
History of SiC Device
Development P.27 to P.28

ROHM Group Locations P.29

The latent power of SiC is brought to life through our passionate engineers.
Extremely rare in nature, naturally occurring SiC was first discovered in trace amounts in meteorites dating back over 4.6 billion years ago, much
older than our solar system.
Eventually, it became possible to synthesize SiC with superior semiconductor properties. But the process proved to be extremely difficult, with
several obstacles that hampered mass production and baffled even the top researchers in the world.
ROHM began pioneering the mass production of SiC power devices in the 1990s.
At the time, high-quality SiC wafers were quite scarce, and in the absence of a well-equipped research environment, ROHM went on daily
excursions to research facilities through-out the country to conduct experiments.
But ROHM engineers continued to persevere, and even as the state of the global economy worsened they dedicated themselves to im-proving the
production line and creating original testing methodology while increasing processing accuracy, culminating in the world’s first successful mass
production of SiC DMOS in 2010.
This moment was a perfect example of passion coming to fruition for the betterment of society.
ROHM will continue to meet new challenges. As a leader in SiC power devices, we are committed to reaching even higher standards of quality
and expanding research over a broad range of fields.

01 Power Device 02
 Lower power loss and high temperature ■ Performance Comparison : SiC vs. Si
operation in a smaller form factor
Breakdown Electric Field (MV/cm) Bandgap (eV) Thermal Conductivity (W/cm°C)

3.0 3.2 4.9

In the power device field for power conversion and Si 0.3/SiC Si 1.1/SiC Si 1.5/SiC
control, SiC (Silicon Carbide) is garnering increased
attention as a next-generation semiconductor material High voltage
High temperature High heat
Low ON-resistance
operation (over 250°C) dissipation
due to its superior characteristics compared with silicon, High-speed switching

SiC - the next generation of compact, including lower ON-resistance, faster switching speeds,
and higher temperature operation.
energy-saving Eco Devices ・Higher voltages & currents ・Smaller cooling systems
・Low conduction loss ・Higher power density
The demand for power is increasing on a global scale every year while fossil fuels
・Reduced switching loss ・System miniaturization
continue to be depleted and global warming is growing at an alarming rate. This
requires better solutions and more effective use of power and resources. ROHM
provides Eco Devices designed for lower power consumption and high efficiency
operation. These include highly integrated circuits utilizing sophisticated, low power SiC devices being implemented ■ Power Loss Comparison

ICs, passive components, opto electronics and modules that save energy and in a variety of fields, including Power Loss per Arm
the power supply, automotive, railway,
reduce CO² emissions. Included are next-generation SiC devices that promise even (W)
industrial, and consumer sectors 900
lower power consumption and higher efficiency.
SiC devices allow for smaller products with lower power 800

consumption that make mounting possible even in tight 700 Conduction Power loss reduced by47%,
reducedby 47 %,
Loss Switching loss decreased by 85%
spaces. Additional advantages include high voltage and 600

high temperature operation, enabling stable operation 500

Measurement Conditions
under harsh conditions-impossible with silicon-based 400
Tj =125°C
Turn off
products. In hybrid vehicles and EVs SiC power solutions 300 Loss VDSS＝600V
ID＝100A
contribute to increased fuel economy and a larger cabin 200
area, while in solar power generation applications they 100 Turn on Loss
improve power loss by approximately 50%, contributing 0
to reduced global warming. Si (IGBT＋FRD) SiC (MOSFET＋SBD)

SiC Wafer Full SiC Power Modules Discrete

Industrial Equipment
For users who want to reduce
Servers
power loss and achieve greater
Decreases data center power
miniaturization and performance Consumer Electronics consumption by
Energy-saving air conditioners minimizing power loss EV Charging Stations
Reduce charging time
by increasing output

EV
(i.e. hybrid/electric vehicles)
Reduce cooling system size,
decrease weight,
Photovoltaics and increase fuel economy
Increase power
conditioner efficiency

03 Power Device 04
 Lower power loss and high temperature ■ Performance Comparison : SiC vs. Si
operation in a smaller form factor
Breakdown Electric Field (MV/cm) Bandgap (eV) Thermal Conductivity (W/cm°C)

3.0 3.2 4.9

In the power device field for power conversion and Si 0.3/SiC Si 1.1/SiC Si 1.5/SiC
control, SiC (Silicon Carbide) is garnering increased
attention as a next-generation semiconductor material High voltage
High temperature High heat
Low ON-resistance
operation (over 250°C) dissipation
due to its superior characteristics compared with silicon, High-speed switching

SiC - the next generation of compact, including lower ON-resistance, faster switching speeds,
and higher temperature operation.
energy-saving Eco Devices ・Higher voltages & currents ・Smaller cooling systems
・Low conduction loss ・Higher power density
The demand for power is increasing on a global scale every year while fossil fuels
・Reduced switching loss ・System miniaturization
continue to be depleted and global warming is growing at an alarming rate. This
requires better solutions and more effective use of power and resources. ROHM
provides Eco Devices designed for lower power consumption and high efficiency
operation. These include highly integrated circuits utilizing sophisticated, low power SiC devices being implemented ■ Power Loss Comparison

ICs, passive components, opto electronics and modules that save energy and in a variety of fields, including Power Loss per Arm
the power supply, automotive, railway,
reduce CO² emissions. Included are next-generation SiC devices that promise even (W)
industrial, and consumer sectors 900
lower power consumption and higher efficiency.
SiC devices allow for smaller products with lower power 800

consumption that make mounting possible even in tight 700 Conduction Power loss reduced by47%,
reducedby 47 %,
Loss Switching loss decreased by 85%
spaces. Additional advantages include high voltage and 600

high temperature operation, enabling stable operation 500

Measurement Conditions
under harsh conditions-impossible with silicon-based 400
Tj =125°C
Turn off
products. In hybrid vehicles and EVs SiC power solutions 300 Loss VDSS＝600V
ID＝100A
contribute to increased fuel economy and a larger cabin 200
area, while in solar power generation applications they 100 Turn on Loss
improve power loss by approximately 50%, contributing 0
to reduced global warming. Si (IGBT＋FRD) SiC (MOSFET＋SBD)

SiC Wafer Full SiC Power Modules Discrete

Industrial Equipment
For users who want to reduce
Servers
power loss and achieve greater
Decreases data center power
miniaturization and performance Consumer Electronics consumption by
Energy-saving air conditioners minimizing power loss EV Charging Stations
Reduce charging time
by increasing output

EV
(i.e. hybrid/electric vehicles)
Reduce cooling system size,
decrease weight,
Photovoltaics and increase fuel economy
Increase power
conditioner efficiency

03 Power Device 04
 SiC Power Devices

SiC Power Devices ■ SiC MOSFET Performance Comparison : Planar vs. Trench ■ Internal Circuit Diagrams

Drain
Comparison of the same-size chip SCT series

Reduced

Input Capacitance(pF)
Gate
The industry's 1st mass produced SiC by 50%
ON Resistance
Planar MOSFET

makes the previously impossible "possible" 80mΩ

Reduced by 35%
Source
Input Capacitance MOSFET
Trench MOSFET
SCH series Drain
40mΩ
0 20 40 60 80 100 120 140 160
Gate
ON Resistance at 25°C(mΩ)

2nd-Generation SiC Planar MOSFET

3rd-Generation SiC Trench MOSFET
Source
MOSFET SBD
SiC MOSFETs High speed switching with low ON-resistance
SiC MOSFET enables simultaneous high speed switching with low ON-resistance - normally impossible with SiC MOSFETs

silicone-based products. Additional features include superior electric characteristics at high temperatures and RDS(on) Qg
Automotive
Polarity VDSS ID PD(W) Typ.(mΩ) Typ.(nC)
Part No. Grade Package
significantly lower switching loss, allowing smaller peripheral components to be used. AEC-Q101 (ch) (V) (A) (TC=25°C)
VGS=18V VGS= 18V Drive Voltage(V)
2nd Generation(Planer type)
■ Turn OFF Characteristics ■ ON-Resistance Temperature Characteristics SCT2120AF − N 650 29 165 120 61 18 TO-220AB
(Compared with 1,200V-Class Products) (Compared with 650V-Class Products) SCH2080KE − N 1,200 40 262 80 106 18
SCT2080KE − N 1,200 40 262 80 106 18
25 12 TO-247
SCT2160KE − N 1,200 22 165 160 62 18
VDD=400V (TO-247N)
TO-247 SCT2280KE − N 1,200 14 108 280 35 18
20 Rg=5.6Ω 10
(TO-247N) Si-MOSFET SCT2450KE − N 1,200 10 85 450 27 18
ON-Resistance(Ω)

15 Switching loss 8 Difficult for ON SCT2750NY − N 1,700 5.9 57 750 17 18

TO-268-2L
Current(A)

reduced by 90% (Max.) resistance to SCT2H12NY − N 1,700 4 44 1,150 14 18

10 6 increase even at
SCT2H12NZ − N 1,700 3.7 35 1,150 14 18 TO-3PFM
Si-IGBT high temperatures
5
3rd Generation(Trench type)
4
Si-Super Junction SCT3017AL − N 650 118 427 17 172 18
MOSFET
0 2 SCT3022AL − N 650 93 339 22 133 18
SiC MOSFET SiC MOSFET SCT3030AL − N 650 70 262 30 104 18
–5 SCT3060AL − N 650 39 165 60 58 18
0 50 100 150 200 250 300 350 400 450 0 50 100 150 200
Time(nsec.) Temperature(°C) SCT3080AL − N 650 30 134 80 48 18
SCT3120AL − N 650 21 103 120 38 18 TO-247
TO-3PFM
SCT3022KL − N 1,200 95 427 22 178 18 (TO-247N)
SCT3030KL − N 1,200 72 339 30 131 18
SCT3040KL − N 1,200 55 262 40 107 18
Evolution to the next generation, 3rd-Generation SiC MOSFET SCT3080KL − N 1,200 31 165 80 60 18
SCT3105KL − N 1,200 24 134 105 51 18
ROHM is the first in the world* to develop and mass-produce trench-type SiC MOSFETs. Achieving lower ON SCT3160KL − N 1,200 17 103 160 42 18
resistance makes it possible to reduce power loss in a variety of devices. Packages indicate JEDEC notation. ( ) refer to ROHM package type.
*October 2018 ROHM study

TO-268-2L

[Planar Structure] [Trench Structure]

(2nd-Generation) (3rd-Generation)

Metal Metal

P＋ N＋ N＋
P Enables
the development
TO-220AB P＋
P
of devices featuring lower
conduction loss and
superior switching
SiC N- Drift layer SiC N- Drift layer performance.
Packages indicate JEDEC notation.
( ) refer to ROHM package type. SiC Sub SiC Sub
Metal Metal

05 Power Device 06
 SiC Power Devices

SiC Power Devices ■ SiC MOSFET Performance Comparison : Planar vs. Trench ■ Internal Circuit Diagrams

Drain
Comparison of the same-size chip SCT series

Reduced

Input Capacitance(pF)
Gate
The industry's 1st mass produced SiC by 50%
ON Resistance
Planar MOSFET

makes the previously impossible "possible" 80mΩ

Reduced by 35%
Source
Input Capacitance MOSFET
Trench MOSFET
SCH series Drain
40mΩ
0 20 40 60 80 100 120 140 160
Gate
ON Resistance at 25°C(mΩ)

2nd-Generation SiC Planar MOSFET

3rd-Generation SiC Trench MOSFET
Source
MOSFET SBD
SiC MOSFETs High speed switching with low ON-resistance
SiC MOSFET enables simultaneous high speed switching with low ON-resistance - normally impossible with SiC MOSFETs

silicone-based products. Additional features include superior electric characteristics at high temperatures and RDS(on) Qg
Automotive
Polarity VDSS ID PD(W) Typ.(mΩ) Typ.(nC)
Part No. Grade Package
significantly lower switching loss, allowing smaller peripheral components to be used. AEC-Q101 (ch) (V) (A) (TC=25°C)
VGS=18V VGS= 18V Drive Voltage(V)
2nd Generation(Planer type)
■ Turn OFF Characteristics ■ ON-Resistance Temperature Characteristics SCT2120AF − N 650 29 165 120 61 18 TO-220AB
(Compared with 1,200V-Class Products) (Compared with 650V-Class Products) SCH2080KE − N 1,200 40 262 80 106 18
SCT2080KE − N 1,200 40 262 80 106 18
25 12 TO-247
SCT2160KE − N 1,200 22 165 160 62 18
VDD=400V (TO-247N)
TO-247 SCT2280KE − N 1,200 14 108 280 35 18
20 Rg=5.6Ω 10
(TO-247N) Si-MOSFET SCT2450KE − N 1,200 10 85 450 27 18
ON-Resistance(Ω)

15 Switching loss 8 Difficult for ON SCT2750NY − N 1,700 5.9 57 750 17 18

TO-268-2L
Current(A)

reduced by 90% (Max.) resistance to SCT2H12NY − N 1,700 4 44 1,150 14 18

10 6 increase even at
SCT2H12NZ − N 1,700 3.7 35 1,150 14 18 TO-3PFM
Si-IGBT high temperatures
5
3rd Generation(Trench type)
4
Si-Super Junction SCT3017AL − N 650 118 427 17 172 18
MOSFET
0 2 SCT3022AL − N 650 93 339 22 133 18
SiC MOSFET SiC MOSFET SCT3030AL − N 650 70 262 30 104 18
–5 SCT3060AL − N 650 39 165 60 58 18
0 50 100 150 200 250 300 350 400 450 0 50 100 150 200
Time(nsec.) Temperature(°C) SCT3080AL − N 650 30 134 80 48 18
SCT3120AL − N 650 21 103 120 38 18 TO-247
TO-3PFM
SCT3022KL − N 1,200 95 427 22 178 18 (TO-247N)
SCT3030KL − N 1,200 72 339 30 131 18
SCT3040KL − N 1,200 55 262 40 107 18
Evolution to the next generation, 3rd-Generation SiC MOSFET SCT3080KL − N 1,200 31 165 80 60 18
SCT3105KL − N 1,200 24 134 105 51 18
ROHM is the first in the world* to develop and mass-produce trench-type SiC MOSFETs. Achieving lower ON SCT3160KL − N 1,200 17 103 160 42 18
resistance makes it possible to reduce power loss in a variety of devices. Packages indicate JEDEC notation. ( ) refer to ROHM package type.
*October 2018 ROHM study

TO-268-2L

[Planar Structure] [Trench Structure]

(2nd-Generation) (3rd-Generation)

Metal Metal

P＋ N＋ N＋
P Enables
the development
TO-220AB P＋
P
of devices featuring lower
conduction loss and
superior switching
SiC N- Drift layer SiC N- Drift layer performance.
Packages indicate JEDEC notation.
( ) refer to ROHM package type. SiC Sub SiC Sub
Metal Metal

05 Power Device 06
 SiC Power Devices SiC Power Devices

■ Switching Waveforms(600V/10A)
SiC SBDs Significantly lower switching loss 2nd-Generation SiC Schottky Barrier Diodes
12 Automotive Absolute Maximum Ratings(Ta=25°C) Electrical Characteristics(Ta=25°C)
(Schottky SBDs were developed utilizing SiC, making Equivalent
Part No. Grade VRM VR IF IFSM(A) VF (V) IR (μA) Package Circuit
10 AEC-Q101*2
them ideal for PFC (Power Factor Correction) (V) (V) (A) 50Hz.1 Typ. IF (A) Max. VR (V) Diagram

Barrier Diodes) circuits and inverters. Ultra-small reverse

8
SiC SBD
SCS206AJ − 650 650 6 22 1.35 6 120 600
6 SCS208AJ − 650 650 8 29 1.35 8 160 600
recovery time (impossible to achieve with
Switching loss reduced −

Current(A)
4 SCS210AJ 650 650 10 38 1.35 10 200 600
silicon FRDs (Fast Recovery Diodes) ) enables by 60% SCS212AJ − 650 650 12 42 1.35 12 240 600
2
high-speed switching. This minimizes reverse SCS215AJ − 650 650 15 52 1.35 15 300 600
0
SCS220AJ − 650 650 20 67 1.35 20 400 600 TO-263AB
recovery charge (Qrr), reducing switching loss ー2
TO-220ACP Si-FRD SCS206AJHR YES 650 650 6 22 1.35 6 120 600 （LPTL）
VR=400V
considerably and contributes to end-product ー4 di/dt=350A/μsec. SCS208AJHR YES 650 650 8 29 1.35 8 160 600
miniaturization. ー6 SCS210AJHR YES 650 650 10 38 1.35 10 200 600
100 200 SCS212AJHR YES 650 650 12 42 1.35 12 240 600
Time(nsec.) SCS215AJHR YES 650 650 15 52 1.35 15 300 600
SCS220AJHR YES 650 650 20 67 1.35 20 400 600
SCS206AG − 650 650 6 22 1.35 6 120 600
TO-220FM
SCS208AG − 650 650 8 29 1.35 8 160 600
SCS210AG − 650 650 10 38 1.35 10 200 600
SCS212AG − 650 650 12 42 1.35 12 240 600
ROHM continues to improve its device processes and implement low VF in line
SCS215AG − 650 650 15 52 1.35 15 300 600
with generational changes SCS220AG − 650 650 20 67 1.35 20 400 600
TO-220AC
SCS206AGHR YES 650 650 6 22 1.35 6 120 600
TO-263AB ■ Achieves Lower VF Along with Generational Evolution ■ Low VF and High Surge Resistance SCS208AGHR YES 650 650 8 29 1.35 8 160 600
(LPTL) 10 130 SCS210AGHR YES 650 650 10 38 1.35 10 200 600
120 ROHM 3G SCS212AGHR YES 650 650 12 42 1.35 12 240 600
8 3rd gen. 110 Low VF and High IFSM SCS215AGHR YES 650 650 15 52 1.35 15 300 600
Characteristics
SCS310AP 2nd gen. 100
SCS220AGHR YES 650 650 20 67 1.35 20 400 600
IFSM@10msec.(A)

of Competitor
6 90 Devices
SCS206AM − 650 650 6 22 1.35 6 120 600
80
1 gen.
st
I F( A )

4 70
SCS208AM − 650 650 8 29 1.35 8 160 600
60 ROHM SCS210AM − 650 650 10 38 1.35 10 200 600
2G SBD TO-220FM
2 50 SCS210A
ROHM SCS212AM − 650 650 12 42 1.35 12 240 600
TO-247 1G SBD
40 Low VF
SCS110A SCS215AM − 650 650 15 52 1.35 15 300 600
[Dual-Chip] 30
1.2 1.3 1.4 1.5 1.6 SCS220AM − 650 650 20 67 1.35 20 400 600
0 0.5 1 1.5 2
V F (V) (Ta =150 °C) VF@10A(V) (650V/10A) SCS215AE − 650 650 15 52 1.35 15 300 600
SCS220AE − 650 650 20 67 1.35 20 400 600
SCS220AE2 − 650 650 10/20*1 38/76*1 1.35 10 200 600
SCS230AE2 − 650 650 15/30*1 52/104*1 1.35 15 300 600
3rd-Generation SiC Schottky Barrier Diodes TO-247
SCS240AE2 − 650 650 20/40*1 67/135*1 1.35 20 400 600
Automotive Absolute Maximum Ratings(Ta=25°C) Electrical Characteristics(Ta=25°C) Equivalent SCS220AE2HR YES 650 650 10/20* 1
38/76* 1
1.35 10 200 600
TO-220AC
Par t No. Grade VRM VR IF IFSM (A) VF (V) IR (μA) Package Circuit SCS230AE2HR YES 650 650 15/30*1 52/104*1 1.35 15 300 600
AEC-Q101* (V) (V) (A) 50Hz.1 Typ. IF(A) Max. VR (V) Diagram SCS240AE2HR YES 650 650 20/40*1 67/135*1 1.35 20 400 600

SCS302AJ − 650 650 2 19 1.35 2 10 650 SCS205KG − 1,200 1,200 5 22 1.4 5 100 1,200
Packages indicate JEDEC notation. SCS210KG − 1,200 1,200 10 42 1.4 10 200 1,200
( ) refer to ROHM package type. SCS304AJ − 650 650 4 27 1.35 4 20 650
SCS215KG − 1,200 1,200 15 62 1.4 15 300 1,200
SCS306AJ − 650 650 6 47 1.35 6 30 650
SCS220KG − 1,200 1,200 20 78 1.4 20 400 1,200
SCS308AJ − 650 650 8 67 1.35 8 40 650 TO-263AB YES 1,200 100 1,200
TO-220AC
SCS205KGHR 1,200 5 22 1.4 5
SCS310AJ − 650 650 10 82 1.35 10 50 650 (LPTL) SCS210KGHR YES 1,200 1,200 10 42 1.4 10 200 1,200
SCS312AJ − 650 650 12 96 1.35 12 60 650 SCS215KGHR YES 1,200 1,200 15 62 1.4 15 300 1,200
SCS315AJ − 650 650 15 112 1.35 15 75 650 SCS220KGHR YES 1,200 1,200 20 78 1.4 20 400 1,200
SCS320AJ − 650 650 20 123 1.35 20 100 650 SCS210KE2 − 1,200 1,200 5/10*1 22/45*1 1.4 5 100 1,200
SCS302AHG − 650 650 2 19 1 2 10 650 SCS220KE2 − 1,200 1,200 10/20*1 42/84*1 1.4 10 200 1,200
SCS230KE2 − 1,200 1,200 15/30*1 62/124*1 1.4 15 300 1,200
SCS304AHG − 650 650 4 27 1 4 20 650
SCS240KE2 − 1,200 1,200 20/40*1 78/157*1 1.4 20 400 1,200
SCS306AHG − 650 650 6 47 1 6 30 650 TO-247
SCS210KE2HR YES 1,200 1,200 5/10*1 22/45*1 1.4 5 100 1,200
SCS308AHG − 650 650 8 67 1 8 40 650
TO-220ACP SCS220KE2HR YES 1,200 1,200 10/20* 1
42/84* 1
1.4 10 200 1,200
SCS310AHG − 650 650 10 82 1 10 50 650 SCS230KE2AHR YES 1,200 1,200 15/30*1 62/124*1 1.4 15 300 1,200
SCS312AHG − 650 650 12 96 1 12 60 650 SCS240KE2AHR YES 1,200 1,200 20/40*1 78/157*1 1.4 20 400 1,200
SCS315AHG − 650 650 15 112 1 15 75 650
Packages indicate JEDEC notation. ( ) refer to ROHM package type. *1 : (Per Leg/Device) *2 : Rev.C
SCS320AHG − 650 650 20 123 1 20 100 650
SCS304AM − 650 650 4 27 1 4 20 650
SCS306AM − 650 650 6 47 1 6 30 650
SCS308AM − 650 650 8 67 1 8 40 650 ROHM offers automotive-grade(AEC-Q101 qualified) products
SCS310AM − 650 650 10 82 1 10 50 650 TO-220FM
ROHM SiC SBD have been ■ Example :
SCS312AM − 650 650 12 96 1 12 60 650
adopted in a variety of charging Automotive PFC Boost Diode
SCS315AM − 650 650 15 112 1 15 75 650 SiC SBD 650V
Charging
SCS320AM − 650 650 20 123 1 20 100 650 circuits in electric/hybrid vehicles.
Circuit Secondary Side
Rectification
Packages indicate JEDEC notation. ( ) refer to ROHM package type. * Rev.C
SiC SBD 1,200V

07 Power Device 08
 SiC Power Devices SiC Power Devices

■ Switching Waveforms(600V/10A)
SiC SBDs Significantly lower switching loss 2nd-Generation SiC Schottky Barrier Diodes
12 Automotive Absolute Maximum Ratings(Ta=25°C) Electrical Characteristics(Ta=25°C)
(Schottky SBDs were developed utilizing SiC, making Equivalent
Part No. Grade VRM VR IF IFSM(A) VF (V) IR (μA) Package Circuit
10 AEC-Q101*2
them ideal for PFC (Power Factor Correction) (V) (V) (A) 50Hz.1 Typ. IF (A) Max. VR (V) Diagram

Barrier Diodes) circuits and inverters. Ultra-small reverse

8
SiC SBD
SCS206AJ − 650 650 6 22 1.35 6 120 600
6 SCS208AJ − 650 650 8 29 1.35 8 160 600
recovery time (impossible to achieve with
Switching loss reduced −

Current(A)
4 SCS210AJ 650 650 10 38 1.35 10 200 600
silicon FRDs (Fast Recovery Diodes) ) enables by 60% SCS212AJ − 650 650 12 42 1.35 12 240 600
2
high-speed switching. This minimizes reverse SCS215AJ − 650 650 15 52 1.35 15 300 600
0
SCS220AJ − 650 650 20 67 1.35 20 400 600 TO-263AB
recovery charge (Qrr), reducing switching loss ー2
TO-220ACP Si-FRD SCS206AJHR YES 650 650 6 22 1.35 6 120 600 （LPTL）
VR=400V
considerably and contributes to end-product ー4 di/dt=350A/μsec. SCS208AJHR YES 650 650 8 29 1.35 8 160 600
miniaturization. ー6 SCS210AJHR YES 650 650 10 38 1.35 10 200 600
100 200 SCS212AJHR YES 650 650 12 42 1.35 12 240 600
Time(nsec.) SCS215AJHR YES 650 650 15 52 1.35 15 300 600
SCS220AJHR YES 650 650 20 67 1.35 20 400 600
SCS206AG − 650 650 6 22 1.35 6 120 600
TO-220FM
SCS208AG − 650 650 8 29 1.35 8 160 600
SCS210AG − 650 650 10 38 1.35 10 200 600
SCS212AG − 650 650 12 42 1.35 12 240 600
ROHM continues to improve its device processes and implement low VF in line
SCS215AG − 650 650 15 52 1.35 15 300 600
with generational changes SCS220AG − 650 650 20 67 1.35 20 400 600
TO-220AC
SCS206AGHR YES 650 650 6 22 1.35 6 120 600
TO-263AB ■ Achieves Lower VF Along with Generational Evolution ■ Low VF and High Surge Resistance SCS208AGHR YES 650 650 8 29 1.35 8 160 600
(LPTL) 10 130 SCS210AGHR YES 650 650 10 38 1.35 10 200 600
120 ROHM 3G SCS212AGHR YES 650 650 12 42 1.35 12 240 600
8 3rd gen. 110 Low VF and High IFSM SCS215AGHR YES 650 650 15 52 1.35 15 300 600
Characteristics
SCS310AP 2nd gen. 100
SCS220AGHR YES 650 650 20 67 1.35 20 400 600
IFSM@10msec.(A)

of Competitor
6 90 Devices
SCS206AM − 650 650 6 22 1.35 6 120 600
80
1 gen.
st
I F( A )

4 70
SCS208AM − 650 650 8 29 1.35 8 160 600
60 ROHM SCS210AM − 650 650 10 38 1.35 10 200 600
2G SBD TO-220FM
2 50 SCS210A
ROHM SCS212AM − 650 650 12 42 1.35 12 240 600
TO-247 1G SBD
40 Low VF
SCS110A SCS215AM − 650 650 15 52 1.35 15 300 600
[Dual-Chip] 30
1.2 1.3 1.4 1.5 1.6 SCS220AM − 650 650 20 67 1.35 20 400 600
0 0.5 1 1.5 2
V F (V) (Ta =150 °C) VF@10A(V) (650V/10A) SCS215AE − 650 650 15 52 1.35 15 300 600
SCS220AE − 650 650 20 67 1.35 20 400 600
SCS220AE2 − 650 650 10/20*1 38/76*1 1.35 10 200 600
SCS230AE2 − 650 650 15/30*1 52/104*1 1.35 15 300 600
3rd-Generation SiC Schottky Barrier Diodes TO-247
SCS240AE2 − 650 650 20/40*1 67/135*1 1.35 20 400 600
Automotive Absolute Maximum Ratings(Ta=25°C) Electrical Characteristics(Ta=25°C) Equivalent SCS220AE2HR YES 650 650 10/20* 1
38/76* 1
1.35 10 200 600
TO-220AC
Par t No. Grade VRM VR IF IFSM (A) VF (V) IR (μA) Package Circuit SCS230AE2HR YES 650 650 15/30*1 52/104*1 1.35 15 300 600
AEC-Q101* (V) (V) (A) 50Hz.1 Typ. IF(A) Max. VR (V) Diagram SCS240AE2HR YES 650 650 20/40*1 67/135*1 1.35 20 400 600

SCS302AJ − 650 650 2 19 1.35 2 10 650 SCS205KG − 1,200 1,200 5 22 1.4 5 100 1,200
Packages indicate JEDEC notation. SCS210KG − 1,200 1,200 10 42 1.4 10 200 1,200
( ) refer to ROHM package type. SCS304AJ − 650 650 4 27 1.35 4 20 650
SCS215KG − 1,200 1,200 15 62 1.4 15 300 1,200
SCS306AJ − 650 650 6 47 1.35 6 30 650
SCS220KG − 1,200 1,200 20 78 1.4 20 400 1,200
SCS308AJ − 650 650 8 67 1.35 8 40 650 TO-263AB YES 1,200 100 1,200
TO-220AC
SCS205KGHR 1,200 5 22 1.4 5
SCS310AJ − 650 650 10 82 1.35 10 50 650 (LPTL) SCS210KGHR YES 1,200 1,200 10 42 1.4 10 200 1,200
SCS312AJ − 650 650 12 96 1.35 12 60 650 SCS215KGHR YES 1,200 1,200 15 62 1.4 15 300 1,200
SCS315AJ − 650 650 15 112 1.35 15 75 650 SCS220KGHR YES 1,200 1,200 20 78 1.4 20 400 1,200
SCS320AJ − 650 650 20 123 1.35 20 100 650 SCS210KE2 − 1,200 1,200 5/10*1 22/45*1 1.4 5 100 1,200
SCS302AHG − 650 650 2 19 1 2 10 650 SCS220KE2 − 1,200 1,200 10/20*1 42/84*1 1.4 10 200 1,200
SCS230KE2 − 1,200 1,200 15/30*1 62/124*1 1.4 15 300 1,200
SCS304AHG − 650 650 4 27 1 4 20 650
SCS240KE2 − 1,200 1,200 20/40*1 78/157*1 1.4 20 400 1,200
SCS306AHG − 650 650 6 47 1 6 30 650 TO-247
SCS210KE2HR YES 1,200 1,200 5/10*1 22/45*1 1.4 5 100 1,200
SCS308AHG − 650 650 8 67 1 8 40 650
TO-220ACP SCS220KE2HR YES 1,200 1,200 10/20* 1
42/84* 1
1.4 10 200 1,200
SCS310AHG − 650 650 10 82 1 10 50 650 SCS230KE2AHR YES 1,200 1,200 15/30*1 62/124*1 1.4 15 300 1,200
SCS312AHG − 650 650 12 96 1 12 60 650 SCS240KE2AHR YES 1,200 1,200 20/40*1 78/157*1 1.4 20 400 1,200
SCS315AHG − 650 650 15 112 1 15 75 650
Packages indicate JEDEC notation. ( ) refer to ROHM package type. *1 : (Per Leg/Device) *2 : Rev.C
SCS320AHG − 650 650 20 123 1 20 100 650
SCS304AM − 650 650 4 27 1 4 20 650
SCS306AM − 650 650 6 47 1 6 30 650
SCS308AM − 650 650 8 67 1 8 40 650 ROHM offers automotive-grade(AEC-Q101 qualified) products
SCS310AM − 650 650 10 82 1 10 50 650 TO-220FM
ROHM SiC SBD have been ■ Example :
SCS312AM − 650 650 12 96 1 12 60 650
adopted in a variety of charging Automotive PFC Boost Diode
SCS315AM − 650 650 15 112 1 15 75 650 SiC SBD 650V
Charging
SCS320AM − 650 650 20 123 1 20 100 650 circuits in electric/hybrid vehicles.
Circuit Secondary Side
Rectification
Packages indicate JEDEC notation. ( ) refer to ROHM package type. * Rev.C
SiC SBD 1,200V

07 Power Device 08
 SiC Power Devices

Full SiC Switching loss reduced by 85%(Max.)

Peripheral SiC ICs
Power Modules ROHM has developed low-surge-noise power modules integrating SiC devices produced in-house,
maximizing high-speed performance. The result is significantly reduced switching loss compared with
conventional Si IGBTs. Supports SiC power semiconductors and
contributes to increased adoption

■ Switching Loss Comparison ■ Internal Circuit Diagram(Half Bridge Circuit)

Carrier Frequency=20kHz
SiC MOSFET
C type 200 D1 SiC SBD

Compared to Si IGBT,
Dissipation per Arm(W)

150
Switching loss reduced
by 80% G1
100 Switching
Loss SS1
■ Recommended Operating Range(BM6101FV-C)
50
S1D2
Thermistor for Isolated High-speed operation supports SiC
temperature Parameter Symbol Min. Max. Unit
Gate Driver Features
Conduction
monitoring
Loss G2 ● High-speed operation with a Max. I/O
0 (BSM300D12P2E001 Input Supply Voltage VCC1 ＋4.5 ＋5.5 V
IGBT 1,200V 100A Full SiC 1,200V 100A only)
E type SS2
delay time of 60ns
● Core-less transformer utilized for 2,500Vrms
Output Supply Voltage VCC 2 ＋14 ＋24 V
S2

SiC MOSFET SiC SBD

 or 3,750Vrms isolation Output VEE Voltage VEE2 −12 ±0 V
● Original noise cancelling technology results  
Operating
in high CMR (Common Mode Rejection) Temperature Range Ta −40 ＋125 °C
● Supports high VGS /negative voltage   

power supplies* *BM6101FV-C, BM6104FV-C

Full SiC Power Modules ● Compact package

Absolute Maximum Ratings(Tj=25°C) (SSOP-B20W : 6.5×8.1×2.01mm)

SSOP-B20W
Part No. Internal Circuit (SSOP-B10W : 3.5×10.2×1.9mm)
VDSS ID Tj Tstg Visol(V)
G type Package
(V) (A) (°C) (°C) AC 1min.

2nd-Generation

BSM080D12P2C008 1,200 80 −40 to ＋175 −40 to ＋125 2,500 ■ IPM Operating Waveforms(BM6101FV-C)

<Conditions> ROHM SiC IPM  VCC1＝5.0V VCC2＝18V VEE２＝–5V VPN＝800V Ta=25°C 

BSM120D12P2C005 1,200 120 −40 to ＋175 −40 to ＋125 2,500
2μs/div.
C type
SSOP-B10W P 800V Stable operation
BSM120C12P2C201 1,200 120 −40 to ＋175 −40 to ＋125 2,500 SiC MOSFET
ensured up to
800V/400A output
d IN(10V/div.)
Gate g
IN
Driver SiC FET Gate
BSM180D12P2C101 1,200 180 −40 to ＋175 −40 to ＋125 2,500
5V s (20V/div.)
18V
SiC FET Drain
BSM180C12P2E202 1,200 180 −40 to ＋175 −40 to ＋125 2,500 5V (500V/div.) V
SiC SBD Id(500A/div.) A
BSM180D12P2E002 1,200 180 −40 to ＋175 −40 to ＋125 2,500 E type
N

BSM300D12P2E001 1,200 300 −40 to ＋175 −40 to ＋125 2,500

BSM400D12P2G003 1,200 400 −40 to ＋175 −40 to ＋175 2,500 G type Isolated Gate Drivers(Automotive Grade)
Input-side Output-side Output-side Isolation I/O Delay Minimum Maximum Operating
3rd-Generation Part No. Supply Positive Supply Negative Supply Voltage Time Input Pulse Output Temperature Function Package
Voltage(V) Voltage(V) Voltage(V) (Vrms) (ns) Width(ns) Current(A) (°C)
BSM180D12P3C007 1,200 180 −40 to ＋175 −40 to ＋125 2,500
C type Miller Clamp/Fail Output/
BM6101FV-C 4.5 to 5.5 14 to 24 –12 to 0 2,500 350 180 3 −40 to ＋125 Built-in under voltage lock out
BSM180C12P3C202 1,200 180 −40 to ＋175 −40 to ＋125 2,500 circuit/Thermal protection/
Short current protection/DESAT/
Soft turn-off function for short
BSM300C12P3E201 1,200 300 −40 to ＋175 −40 to ＋125 2,500 E type BM6102FV-C 4.5 to 5.5 14 to 20 − 2,500 200 100 3 −40 to ＋125 SSOP-B20W
current protection

Miller Clamp/Fail Output/

BSM400C12P3G202 1,200 400 −40 to ＋175 −40 to ＋125 2,500 Built-in under voltage lock out circuit/
BM6104FV-C 4.5 to 5.5 10 to 24 –12 to 0 2,500 150 90 3 −40 to ＋125 Short current protection/DESAT/Soft turn-off
function for short current protection
BSM400D12P3G002 1,200 400 −40 to ＋175 −40 to ＋125 2,500
Miller Clamp/
G type Overvoltage Protection Circuit/
BM61S40RFV-C 4.5 to 5.5 16 to 20 − 3,750 60 60 4 −40 to ＋125 Built-in under
SSOP-B10W
BSM600C12P3G201 1,200 600 −40 to ＋175 −40 to ＋125 2,500 voltage lock out circuit

BSM600D12P3G001 1,200 600 −40 to ＋175 −40 to ＋125 2,500

09 Power Device 10
 SiC Power Devices

Full SiC Switching loss reduced by 85%(Max.)

Peripheral SiC ICs
Power Modules ROHM has developed low-surge-noise power modules integrating SiC devices produced in-house,
maximizing high-speed performance. The result is significantly reduced switching loss compared with
conventional Si IGBTs. Supports SiC power semiconductors and
contributes to increased adoption

■ Switching Loss Comparison ■ Internal Circuit Diagram(Half Bridge Circuit)

Carrier Frequency=20kHz
SiC MOSFET
C type 200 D1 SiC SBD

Compared to Si IGBT,
Dissipation per Arm(W)

150
Switching loss reduced
by 80% G1
100 Switching
Loss SS1
■ Recommended Operating Range(BM6101FV-C)
50
S1D2
Thermistor for Isolated High-speed operation supports SiC
temperature Parameter Symbol Min. Max. Unit
Gate Driver Features
Conduction
monitoring
Loss G2 ● High-speed operation with a Max. I/O
0 (BSM300D12P2E001 Input Supply Voltage VCC1 ＋4.5 ＋5.5 V
IGBT 1,200V 100A Full SiC 1,200V 100A only)
E type SS2
delay time of 60ns
● Core-less transformer utilized for 2,500Vrms
Output Supply Voltage VCC 2 ＋14 ＋24 V
S2

SiC MOSFET SiC SBD

 or 3,750Vrms isolation Output VEE Voltage VEE2 −12 ±0 V
● Original noise cancelling technology results  
Operating
in high CMR (Common Mode Rejection) Temperature Range Ta −40 ＋125 °C
● Supports high VGS /negative voltage   

power supplies* *BM6101FV-C, BM6104FV-C

Full SiC Power Modules ● Compact package

Absolute Maximum Ratings(Tj=25°C) (SSOP-B20W : 6.5×8.1×2.01mm)

SSOP-B20W
Part No. Internal Circuit (SSOP-B10W : 3.5×10.2×1.9mm)
VDSS ID Tj Tstg Visol(V)
G type Package
(V) (A) (°C) (°C) AC 1min.

2nd-Generation

BSM080D12P2C008 1,200 80 −40 to ＋175 −40 to ＋125 2,500 ■ IPM Operating Waveforms(BM6101FV-C)

<Conditions> ROHM SiC IPM  VCC1＝5.0V VCC2＝18V VEE２＝–5V VPN＝800V Ta=25°C 

BSM120D12P2C005 1,200 120 −40 to ＋175 −40 to ＋125 2,500
2μs/div.
C type
SSOP-B10W P 800V Stable operation
BSM120C12P2C201 1,200 120 −40 to ＋175 −40 to ＋125 2,500 SiC MOSFET
ensured up to
800V/400A output
d IN(10V/div.)
Gate g
IN
Driver SiC FET Gate
BSM180D12P2C101 1,200 180 −40 to ＋175 −40 to ＋125 2,500
5V s (20V/div.)
18V
SiC FET Drain
BSM180C12P2E202 1,200 180 −40 to ＋175 −40 to ＋125 2,500 5V (500V/div.) V
SiC SBD Id(500A/div.) A
BSM180D12P2E002 1,200 180 −40 to ＋175 −40 to ＋125 2,500 E type
N

BSM300D12P2E001 1,200 300 −40 to ＋175 −40 to ＋125 2,500

BSM400D12P2G003 1,200 400 −40 to ＋175 −40 to ＋175 2,500 G type Isolated Gate Drivers(Automotive Grade)
Input-side Output-side Output-side Isolation I/O Delay Minimum Maximum Operating
3rd-Generation Part No. Supply Positive Supply Negative Supply Voltage Time Input Pulse Output Temperature Function Package
Voltage(V) Voltage(V) Voltage(V) (Vrms) (ns) Width(ns) Current(A) (°C)
BSM180D12P3C007 1,200 180 −40 to ＋175 −40 to ＋125 2,500
C type Miller Clamp/Fail Output/
BM6101FV-C 4.5 to 5.5 14 to 24 –12 to 0 2,500 350 180 3 −40 to ＋125 Built-in under voltage lock out
BSM180C12P3C202 1,200 180 −40 to ＋175 −40 to ＋125 2,500 circuit/Thermal protection/
Short current protection/DESAT/
Soft turn-off function for short
BSM300C12P3E201 1,200 300 −40 to ＋175 −40 to ＋125 2,500 E type BM6102FV-C 4.5 to 5.5 14 to 20 − 2,500 200 100 3 −40 to ＋125 SSOP-B20W
current protection

Miller Clamp/Fail Output/

BSM400C12P3G202 1,200 400 −40 to ＋175 −40 to ＋125 2,500 Built-in under voltage lock out circuit/
BM6104FV-C 4.5 to 5.5 10 to 24 –12 to 0 2,500 150 90 3 −40 to ＋125 Short current protection/DESAT/Soft turn-off
function for short current protection
BSM400D12P3G002 1,200 400 −40 to ＋175 −40 to ＋125 2,500
Miller Clamp/
G type Overvoltage Protection Circuit/
BM61S40RFV-C 4.5 to 5.5 16 to 20 − 3,750 60 60 4 −40 to ＋125 Built-in under
SSOP-B10W
BSM600C12P3G201 1,200 600 −40 to ＋175 −40 to ＋125 2,500 voltage lock out circuit

BSM600D12P3G001 1,200 600 −40 to ＋175 −40 to ＋125 2,500

09 Power Device 10
 Peripheral SiC ICs Peripheral SiC ICs

AC/DC World’s first* AC/DC converter control Features ● Maximizes SiC MOSFET performance
SiC Evaluation boards for Features ● Loss simulator available (online) allows
ICs for SiC drive and contributes to dramatically
ROHM SiC products are offered users to simulate the loss of full SiC
Converter reduced power consumption Evaluation modules. (Please use the QR code below
These ICs make it easy to configure an AC/DC
Boards
● Enabling SiC MOSFET drive allows to access the support page.)
ROHM offers a variety of tools ideal for evaluating
converter with built-in SiC MOSFET that up to now for greater miniaturization
SiC power devices and SiC peripheral ICs, including
has only been possible using discrete configurations. ● Multiple protection functions support
boards that integrate components such as a gate
The increased proliferation of SiC power devices is high voltage operation up to 690V AC
driver with built-in power supply or AC/DC converter
expected to provide added value to the AC/DC
control IC for SiC MOSFET drive that make it
converter market, which demands increased power
possible to easily evaluate ROHM SiC power
savings and miniaturization.
devices.
*October 2018 ROHM study

SOP-J8

■ AC/DC Converter Efficiency Comparison : Si vs SiC

90
Switching from Si to SiC makes it SiC MOSFET
possible to improve conversion
Si-MOSFET
efficiency by up to  %6 ■ Power Supply Board for Evaluation Offered
Power Conversion Efficiency(%)

85
SiC MOSFET
Easily verify the performance of ROHM's SCT2H12NZ SiC MOSFET.

80 6% Max. Front Back

BD7682FJ-LB-EVK-402
Si-MOSFET
● AC/DC evaluation board for SiC
75
MOSFET drive (flyback converter)
*Assuming equivalent control IC performance ● Onboard 1,700V SiC MOSFET (SCT2H12NZ)
For SiC MOSFET Drive ● Onboard DC/DC converter control
70 1700V SiC MOSFET
0 10 20 30 40 50 60 70 80 DC/DC Converter Control IC
(ROHM SCT2H12NZ)
(ROHM BD7682FJ-LB) IC (BD7682FJ-LB)
Output Power(W)
● 3-phase 400 to 690V AC input, 24V/1A output

AC/DC Converter ICs(For SiC MOSFET Driving)

Supply Maximum
Part No. Voltage Control MOSFET Frequency VCC OVP Package
MOSFET FBOLP Brown Out
Method Performance
(V) (kHz)
BD7682FJ-LB 15 to 27.5 QR External − 120 Self-restart (adjustable) Latch SOP-J8
■ 2ch Gate Driver Reference Board with Built-in Flyback Power Supply
BD7683FJ-LB 15 to 27.5 QR External − 120 Latch (adjustable) Latch SOP-J8

BD7684FJ-LB 15 to 27.5 QR External − 120 Self-restart (adjustable) Self-restart SOP-J8 2ch board supports direct mounting of ROHM's BSM300D12P2E001 300A/1,200V full SiC power module.
BD7685FJ-LB 15 to 27.5 QR External − 120 Latch (adjustable) Self-restart SOP-J8 Integrated isolated DC/DC converter provides the necessary gate voltage.

BM60052FV-EVK-001
● Capable of directly driving ROHM's
BSM300D12P2E001 300A/1,200V SiC power module
● Multiple protection functions (short-circuit detection,
soft turn OFF, FLT output, UVLO, gate monitoring output, Miller clamp)

*For details and information on other evaluation boards,

please refer to our SiC support page. Boards can be
purchased through online distributors.
https://www.rohm.com/power-device-support

11 Power Device 12
 Peripheral SiC ICs Peripheral SiC ICs

AC/DC World’s first* AC/DC converter control Features ● Maximizes SiC MOSFET performance
SiC Evaluation boards for Features ● Loss simulator available (online) allows
ICs for SiC drive and contributes to dramatically
ROHM SiC products are offered users to simulate the loss of full SiC
Converter reduced power consumption Evaluation modules. (Please use the QR code below
These ICs make it easy to configure an AC/DC
Boards
● Enabling SiC MOSFET drive allows to access the support page.)
ROHM offers a variety of tools ideal for evaluating
converter with built-in SiC MOSFET that up to now for greater miniaturization
SiC power devices and SiC peripheral ICs, including
has only been possible using discrete configurations. ● Multiple protection functions support
boards that integrate components such as a gate
The increased proliferation of SiC power devices is high voltage operation up to 690V AC
driver with built-in power supply or AC/DC converter
expected to provide added value to the AC/DC
control IC for SiC MOSFET drive that make it
converter market, which demands increased power
possible to easily evaluate ROHM SiC power
savings and miniaturization.
devices.
*October 2018 ROHM study

SOP-J8

■ AC/DC Converter Efficiency Comparison : Si vs SiC

90
Switching from Si to SiC makes it SiC MOSFET
possible to improve conversion
Si-MOSFET
efficiency by up to  %6 ■ Power Supply Board for Evaluation Offered
Power Conversion Efficiency(%)

85
SiC MOSFET
Easily verify the performance of ROHM's SCT2H12NZ SiC MOSFET.

80 6% Max. Front Back

BD7682FJ-LB-EVK-402
Si-MOSFET
● AC/DC evaluation board for SiC
75
MOSFET drive (flyback converter)
*Assuming equivalent control IC performance ● Onboard 1,700V SiC MOSFET (SCT2H12NZ)
For SiC MOSFET Drive ● Onboard DC/DC converter control
70 1700V SiC MOSFET
0 10 20 30 40 50 60 70 80 DC/DC Converter Control IC
(ROHM SCT2H12NZ)
(ROHM BD7682FJ-LB) IC (BD7682FJ-LB)
Output Power(W)
● 3-phase 400 to 690V AC input, 24V/1A output

AC/DC Converter ICs(For SiC MOSFET Driving)

Supply Maximum
Part No. Voltage Control MOSFET Frequency VCC OVP Package
MOSFET FBOLP Brown Out
Method Performance
(V) (kHz)
BD7682FJ-LB 15 to 27.5 QR External − 120 Self-restart (adjustable) Latch SOP-J8
■ 2ch Gate Driver Reference Board with Built-in Flyback Power Supply
BD7683FJ-LB 15 to 27.5 QR External − 120 Latch (adjustable) Latch SOP-J8

BD7684FJ-LB 15 to 27.5 QR External − 120 Self-restart (adjustable) Self-restart SOP-J8 2ch board supports direct mounting of ROHM's BSM300D12P2E001 300A/1,200V full SiC power module.
BD7685FJ-LB 15 to 27.5 QR External − 120 Latch (adjustable) Self-restart SOP-J8 Integrated isolated DC/DC converter provides the necessary gate voltage.

BM60052FV-EVK-001
● Capable of directly driving ROHM's
BSM300D12P2E001 300A/1,200V SiC power module
● Multiple protection functions (short-circuit detection,
soft turn OFF, FLT output, UVLO, gate monitoring output, Miller clamp)

*For details and information on other evaluation boards,

please refer to our SiC support page. Boards can be
purchased through online distributors.
https://www.rohm.com/power-device-support

11 Power Device 12
 IPMｓ (Intelligent Power Modules)

In te llige n t Pow er Module

IPMs ( Intelligent Power Modules) MOS IPMs Contributes to higher efficiency in

motor drive devices
Features
● 600V/15A IPM with Built-in PrestoMOSTM
● Utilizesa MOSFET device to improve efficiency
High-efficiency IPM products utilizing ROHM’s during steady state operation
PrestoMOSTM. Compared to IGBT IPM, loss during ● Integrates a bootstrap diode, Presto MOSTM and gate driver

ROHM offers intelligent products ideal normal AC operation is reduced significantly.

● Multiple protection circuits (short-circuit current protection,

power supply UVLO and thermal shutdown circuits) along

for motor control with a FAULT signal output function that activates during
protection operation
*"PrestoMOSTM" is a pending trademark of ROHM Co., Ltd.

■ VDS-ID Features ■ Power Loss Comparison with IGBT-IPM

14 Condition
Diode recovery loss
Switching loss(OFF)
Tj=25°C
HSDIP25 12 Reduced Switching loss(ON)
APF : Annual Performance Factor
approx. Diode conduction loss
IPLV : Integrated Part Value Load
10 SEER : Seasonal Energy Efficiency Ratio
43% MOS_IGBT conduction loss
IGBT-IPM
IGBT-IPMs Motor control integrated into a Features 8 BM65364S-VA

Loss(w)
Reduced

ID(A)
single package ● The lineup consists of two series (low-speed/highspeed
6
approx.
76% Reduces loss during Condition
steady-state operation Ta=25°C
switching) featuring an IGBT-optimized design that
Improves AC energy- P=400V, Vcc=15V
All components required for motor control, supports a variety or requirements 4 fc=5kHz, 2Arms
saving indexes
cos φ=0.8
including the power device control IC and ● An IGBT, FWD (Free Wheeling Diode), bootstrap diode,
2
(i.e. APF, IPLV and SEER).
modulation ratio=1
peripheral circuitry, are incorporated into a single and gate driver are integrated into a single package 3-phase modulation
● Multiple protection circuits (short-circuit current protection,
package. ROHM utilizes an IGBT-optimized 0 0.5 1 1.5 2 IGBT-IPM BM65364S-VA
HSDIP25VC
power supply UVLO and thermal shutdown circuits) along VDS(V)
design customized for a range of applications. with a FAULT signal output function that activates during
protection operation
■ Circuit Diagram
HSDIP25
■ Adopting an Application-specific IGBT ■ Circuit Diagram VBU 2 24 P HVIC
Results in High-efficiency Drive Operation Bootstrap Diodes (High-side Gate Driver)
VBV 3 23 U
High Side
24 P
VBU 2

VBV 3 High HVIC ( High-side Gate Driver ) ･Fast Recovery VBW 4 ･Bootstrap diode current
Bootstrap Diode
23 U

・Bootstrap diode current

• Low speed switching type
(fc up to 6kHz)
VBW 4 Side
limiting function Diodes Gate Driver limiting function
・Fast Recovery Diode Gate 22 V
・Floating power supply UVLO ･Floating power supply UVLO
Switching Loss Eoff(μJ)

★
22 V
• Emphasis on conduction loss HINU 5 Driver HINU 5 (HVIC)
HINV 6
(HVIC) HINV 6
Inverter Part(IGBT and FWD)
HINW 7
LVIC( Low-side Gate Driver) HVCC 8
21 W
HINW 7
GND 9 21 W
・Low loss field stop trench IGBT HVCC 8
・UVLO, SCP, TSD, VOT
• High-speed switching type ・Fault signal output
LINU 10
LINV 11 Low 20 NU ・Ultra-low VF fast recovery diode LVIC GND 9 Inverter Part
Side (Low-side Gate Driver) (PrestoMOS™)
LINW 12

(fc up to 20kHz) LVCC 13

LINU 10

★
Gate Protection Circuit LINV 11
Higher
• Emphasis on switching loss ・Built-in temperature output type:VOT FO 14

Driver
19 NV

UVLO : Under Voltage Lock Out LINW 12 Low Side 20 NU

HSDIP25VC (BM6356xS, BM6396xS)
･UVLO, SCP, TSD ･High-speed trr super
CIN 15

Efficiency (LVIC) SCP : Short Circuit Protection LVCC 13

・Built-in TSD type:NC (No Connection)
GND 16

Gen.2 : 2nd Generation

(BM6336xS, BM6376xS)
VOT 17 18 NW

TSD : Thermal Shut Down ･Fault signal output Gate Driver junction MOSFET
fc : Carrier Frequency(PWM frequency) VOT : Analog Temperature Output FO 14 19 NV
CIN 15 (LVIC) ･Ultra-low VF body diode
Saturation Voltage VCE(sat) (V) GND 16
TEST 17
18 NW

IGBT-IPMs(IGBT)
Power VCES IC VCE(sat) PWM Input Isolation Voltage*1 Thermal Protection
Part No. Frequency(kHz) (Vrms) Function*2 Package Protection Circuits UVLO : Under Voltage Lock Out
Device (V) (A) (V)
SCP : Short Circuit Protection TSD : Thermal Shut Down
BM63363S-VA IGBT 600 10 1.5 less than 6 1,500 TSD HSDIP25
BM63363S-VC IGBT 600 10 1.5 less than 6 1,500 TSD HSDIP25VC
BM63563S-VA IGBT 600 10 1.5 less than 6 1,500 VOT HSDIP25
BM63563S-VC IGBT 600 10 1.5 less than 6 1,500 VOT HSDIP25VC
MOS IPMs
BM63763S-VA IGBT 600 10 1.7 less than 20 1,500 TSD HSDIP25
BM63763S-VC IGBT 1.7 less than 20 1,500 TSD HSDIP25VC VDSS ID Ron Recomended Isolation Thermal
600 10 Switching Voltage*1
Part No. Power Device (V) (A) (mΩ) Protection Package
BM63963S-VA IGBT 600 10 1.7 less than 20 1,500 VOT HSDIP25 Frequency(kHz) (Vrms) Function*2
BM63963S-VC IGBT 600 10 1.7 less than 20 1,500 VOT HSDIP25VC
BM63364S-VA IGBT 600 15 1.5 less than 6 1,500 TSD HSDIP25 BM65364S-VA MOSFET 600 15 120 less than 20 1,500 TSD HSDIP25
BM63364S-VC IGBT 600 15 1.5 less than 6 1,500 TSD HSDIP25VC
BM65364S-VC MOSFET 600 15 120 less than 20 1,500 TSD HSDIP25VC
BM63564S-VA IGBT 600 15 1.5 less than 6 1,500 VOT HSDIP25
BM63564S-VC IGBT 600 15 1.5 less than 6 1,500 VOT HSDIP25VC *1 AC 60Hz, 1min., corresponds to 2,500Vrms isolation in the case of a convex-shaped heat sink.
BM63764S-VA IGBT 600 15 1.7 less than 20 1,500 TSD HSDIP25 *2 TSD：Thermal Shut Down, VOT：Analog Temperature Output
BM63764S-VC IGBT 600 15 1.7 less than 20 1,500 TSD HSDIP25VC
BM63964S-VA IGBT 600 15 1.7 less than 20 1,500 VOT HSDIP25
BM63964S-VC IGBT 600 15 1.7 less than 20 1,500 VOT HSDIP25VC
BM63767S-VA IGBT 600 30 1.7 less than 20 1,500 TSD HSDIP25
BM63767S-VC IGBT 600 30 1.7 less than 20 1,500 TSD HSDIP25VC
BM63967S-VA IGBT 600 30 1.7 less than 20 1,500 VOT HSDIP25
BM63967S-VC IGBT 600 30 1.7 less than 20 1,500 VOT HSDIP25VC
*1 AC 60Hz, 1min., corresponds to 2,500Vrms isolation in the case of a convex-shaped heat sink.
*2 TSD：Thermal Shut Down, VOT：Analog Temperature Output

13 Power Device 14
 IPMｓ (Intelligent Power Modules)

In te llige n t Pow er Module

IPMs ( Intelligent Power Modules) MOS IPMs Contributes to higher efficiency in

motor drive devices
Features
● 600V/15A IPM with Built-in PrestoMOSTM
● Utilizesa MOSFET device to improve efficiency
High-efficiency IPM products utilizing ROHM’s during steady state operation
PrestoMOSTM. Compared to IGBT IPM, loss during ● Integrates a bootstrap diode, Presto MOSTM and gate driver

ROHM offers intelligent products ideal normal AC operation is reduced significantly.

● Multiple protection circuits (short-circuit current protection,

power supply UVLO and thermal shutdown circuits) along

for motor control with a FAULT signal output function that activates during
protection operation
*"PrestoMOSTM" is a pending trademark of ROHM Co., Ltd.

■ VDS-ID Features ■ Power Loss Comparison with IGBT-IPM

14 Condition
Diode recovery loss
Switching loss(OFF)
Tj=25°C
HSDIP25 12 Reduced Switching loss(ON)
APF : Annual Performance Factor
approx. Diode conduction loss
IPLV : Integrated Part Value Load
10 SEER : Seasonal Energy Efficiency Ratio
43% MOS_IGBT conduction loss
IGBT-IPM
IGBT-IPMs Motor control integrated into a Features 8 BM65364S-VA

Loss(w)
Reduced

ID(A)
single package ● The lineup consists of two series (low-speed/highspeed
6
approx.
76% Reduces loss during Condition
steady-state operation Ta=25°C
switching) featuring an IGBT-optimized design that
Improves AC energy- P=400V, Vcc=15V
All components required for motor control, supports a variety or requirements 4 fc=5kHz, 2Arms
saving indexes
cos φ=0.8
including the power device control IC and ● An IGBT, FWD (Free Wheeling Diode), bootstrap diode,
2
(i.e. APF, IPLV and SEER).
modulation ratio=1
peripheral circuitry, are incorporated into a single and gate driver are integrated into a single package 3-phase modulation
● Multiple protection circuits (short-circuit current protection,
package. ROHM utilizes an IGBT-optimized 0 0.5 1 1.5 2 IGBT-IPM BM65364S-VA
HSDIP25VC
power supply UVLO and thermal shutdown circuits) along VDS(V)
design customized for a range of applications. with a FAULT signal output function that activates during
protection operation
■ Circuit Diagram
HSDIP25
■ Adopting an Application-specific IGBT ■ Circuit Diagram VBU 2 24 P HVIC
Results in High-efficiency Drive Operation Bootstrap Diodes (High-side Gate Driver)
VBV 3 23 U
High Side
24 P
VBU 2

VBV 3 High HVIC ( High-side Gate Driver ) ･Fast Recovery VBW 4 ･Bootstrap diode current
Bootstrap Diode
23 U

・Bootstrap diode current

• Low speed switching type
(fc up to 6kHz)
VBW 4 Side
limiting function Diodes Gate Driver limiting function
・Fast Recovery Diode Gate 22 V
・Floating power supply UVLO ･Floating power supply UVLO
Switching Loss Eoff(μJ)

★
22 V
• Emphasis on conduction loss HINU 5 Driver HINU 5 (HVIC)
HINV 6
(HVIC) HINV 6
Inverter Part(IGBT and FWD)
HINW 7
LVIC( Low-side Gate Driver) HVCC 8
21 W
HINW 7
GND 9 21 W
・Low loss field stop trench IGBT HVCC 8
・UVLO, SCP, TSD, VOT
• High-speed switching type ・Fault signal output
LINU 10
LINV 11 Low 20 NU ・Ultra-low VF fast recovery diode LVIC GND 9 Inverter Part
Side (Low-side Gate Driver) (PrestoMOS™)
LINW 12

(fc up to 20kHz) LVCC 13

LINU 10

★
Gate Protection Circuit LINV 11
Higher
• Emphasis on switching loss ・Built-in temperature output type:VOT FO 14

Driver
19 NV

UVLO : Under Voltage Lock Out LINW 12 Low Side 20 NU

HSDIP25VC (BM6356xS, BM6396xS)
･UVLO, SCP, TSD ･High-speed trr super
CIN 15

Efficiency (LVIC) SCP : Short Circuit Protection LVCC 13

・Built-in TSD type:NC (No Connection)
GND 16

Gen.2 : 2nd Generation

(BM6336xS, BM6376xS)
VOT 17 18 NW

TSD : Thermal Shut Down ･Fault signal output Gate Driver junction MOSFET
fc : Carrier Frequency(PWM frequency) VOT : Analog Temperature Output FO 14 19 NV
CIN 15 (LVIC) ･Ultra-low VF body diode
Saturation Voltage VCE(sat) (V) GND 16
TEST 17
18 NW

IGBT-IPMs(IGBT)
Power VCES IC VCE(sat) PWM Input Isolation Voltage*1 Thermal Protection
Part No. Frequency(kHz) (Vrms) Function*2 Package Protection Circuits UVLO : Under Voltage Lock Out
Device (V) (A) (V)
SCP : Short Circuit Protection TSD : Thermal Shut Down
BM63363S-VA IGBT 600 10 1.5 less than 6 1,500 TSD HSDIP25
BM63363S-VC IGBT 600 10 1.5 less than 6 1,500 TSD HSDIP25VC
BM63563S-VA IGBT 600 10 1.5 less than 6 1,500 VOT HSDIP25
BM63563S-VC IGBT 600 10 1.5 less than 6 1,500 VOT HSDIP25VC
MOS IPMs
BM63763S-VA IGBT 600 10 1.7 less than 20 1,500 TSD HSDIP25
BM63763S-VC IGBT 1.7 less than 20 1,500 TSD HSDIP25VC VDSS ID Ron Recomended Isolation Thermal
600 10 Switching Voltage*1
Part No. Power Device (V) (A) (mΩ) Protection Package
BM63963S-VA IGBT 600 10 1.7 less than 20 1,500 VOT HSDIP25 Frequency(kHz) (Vrms) Function*2
BM63963S-VC IGBT 600 10 1.7 less than 20 1,500 VOT HSDIP25VC
BM63364S-VA IGBT 600 15 1.5 less than 6 1,500 TSD HSDIP25 BM65364S-VA MOSFET 600 15 120 less than 20 1,500 TSD HSDIP25
BM63364S-VC IGBT 600 15 1.5 less than 6 1,500 TSD HSDIP25VC
BM65364S-VC MOSFET 600 15 120 less than 20 1,500 TSD HSDIP25VC
BM63564S-VA IGBT 600 15 1.5 less than 6 1,500 VOT HSDIP25
BM63564S-VC IGBT 600 15 1.5 less than 6 1,500 VOT HSDIP25VC *1 AC 60Hz, 1min., corresponds to 2,500Vrms isolation in the case of a convex-shaped heat sink.
BM63764S-VA IGBT 600 15 1.7 less than 20 1,500 TSD HSDIP25 *2 TSD：Thermal Shut Down, VOT：Analog Temperature Output
BM63764S-VC IGBT 600 15 1.7 less than 20 1,500 TSD HSDIP25VC
BM63964S-VA IGBT 600 15 1.7 less than 20 1,500 VOT HSDIP25
BM63964S-VC IGBT 600 15 1.7 less than 20 1,500 VOT HSDIP25VC
BM63767S-VA IGBT 600 30 1.7 less than 20 1,500 TSD HSDIP25
BM63767S-VC IGBT 600 30 1.7 less than 20 1,500 TSD HSDIP25VC
BM63967S-VA IGBT 600 30 1.7 less than 20 1,500 VOT HSDIP25
BM63967S-VC IGBT 600 30 1.7 less than 20 1,500 VOT HSDIP25VC
*1 AC 60Hz, 1min., corresponds to 2,500Vrms isolation in the case of a convex-shaped heat sink.
*2 TSD：Thermal Shut Down, VOT：Analog Temperature Output

13 Power Device 14
 IGBTs (Insulated Gate Bipolar Transistor)

IGBTs ( Insulated Gate Bipolar Transistor ) Field Stop ROHM utilizes original trench gate and thin wafer technologies
to achieve low VCE(sat) and reduced switching loss.
Features
● Low VCE(sat) & switching loss
Trench IGBTs ● A broad lineup is offered that makes it possible to select
the ideal solution based on set requirements
● Automotive-grade (AEC-Q101 qualified) RGS series

Contributes to greater efficiency and energy savings Portfolio of ROHMs' Field Stop Trench IGBTs
Automotive Grade SC

in a variety of high voltage, large current applications

Part No. VCE(sat) SW Lineup
Available (AEC-Q101) SOA
3rd-Generation
High speed switching RGW series − ◎ ◎ − ☆650V 30 to 50A@100°C
SCSOA 2μs guaranteed RGTV series − ◎ ◎ 2μs ☆650V 30 to 80A@100°C
2nd-Generation
Low VCE(sat) RGCL series − ◎ − − 600V 30 to 40A@100°C
High speed switching RGTH series − ○ ○ − 650V 20 to 50A@100°C
TO-247N
SCSOA 5μs guaranteed RGT series − ○ − ◎ 650V 4 to 50A@100°C
5μs

○ − ◎ 650V 30 to 50A@100°C
8μs
SCSOA 8 to 10μs guaranteed RGS series YES
○ − ◎  650V 30 to 50A@100°C
10μs ☆1,200V 25 to 40A@100°C

☆ : Under Development

Field Stop Trench IGBTs

Ignition IGBTs High reliability products optimized for automotive Features

● Class-leading efficiency achieved through an optimized
Part No.
Automotive
Grade
VCES
(V) TC =
IC(A)
TC =
PD
(W)
VCE(sat)
Typ. IC
tsc
Min.
IF(Diode)(A)
TC = TC =
VF(Diode)
Typ. IF Package
ignition applications featuring both low VCE(sat) and (AEC-Q101) 25°C 100°C (V) (A) (μsec) 25°C 100°C (V) (A)
tradeoff between VCE(sat) and avalanche tolerance TO-3PFM RGTH40TS65 − 650 40 20 144 1.6 20 − − − − −
high avalanche tolerance. RGTH50TS65 − 650 50 25 174 1.6 25 − − − − −
● Built-in Gate protection diode
RGTH60TS65 − 650 58 30 194 1.6 30 − − − − −
● Gate resistance/Gate-emitter resistance (optional) RGTH80TS65 − 650 70 40 234 1.6 40 − − − − −
RGTH00TS65 − 650 85 50 277 1.6 50 − − − − −
TO-247N
● Automotive-grade (AEC-Q101 qualified) RGTH40TS65D − 650 40 20 144 1.6 20 − 35 20 1.45 20
RGTH50TS65D − 650 50 25 174 1.6 25 − 35 20 1.45 20
*October 2018 ROHM study RGTH60TS65D − 650 58 30 194 1.6 30 − 40 20 1.35 20
RGTH80TS65D − 650 70 40 234 1.6 40 − 40 20 1.35 20
■ Internal Circuit Diagram RGTH00TS65D − 650 85 50 277 1.6 50 − 50 30 1.45 30
RGTH40TK65 − 650 23 14 56 1.6 20 − − − − −
TO-252 RGTH50TK65 − 650 26 16 59 1.6 25 − − − − −
Ex. Automotive Ignition Coil Drive Boost coil
RGTH60TK65 − 650 28 17 61 1.6 30 − − − − −
TO-263S RGTH80TK65 − 650 31 19 66 1.6 40 − − − − −
(LPDS) RGTH00TK65 − 650 35 21 72 1.6 50 − − − − −
TO-3PFM
RGTH40TK65D − 650 23 14 56 1.6 20 − 26 15 1.45 20
RGTH50TK65D − 650 26 16 59 1.6 25 − 26 15 1.45 20
RGTH60TK65D − 650 28 17 61 1.6 30 − 28 16 1.35 20
RGTH80TK65D − 650 31 19 66 1.6 40 − 28 16 1.35 20
RGTH00TK65D − 650 35 21 72 1.6 50 − 34 19 1.45 30
Battery RGW60TS65 − 650 60 30 178 1.5 30 − − − − −
RGW80TS65 − 650 78 40 214 1.5 40 − − − − −
Spark plug RGW00TS65 − 650 96 50 254 1.5 50 − − − − −
TO-247N
TO-263S RGW80TS65D − 650 78 40 214 1.5 40 − 40 20 1.45 20
RGW60TS65D − 650 60 30 178 1.5 30 − 40 20 1.45 20
(LPDS) RGW00TS65D − 650 96 50 254 1.5 50 − 56 30 1.45 30
RGW60TK65 − 650 33 20 72 1.5 30 − − − − −
TO-262 RGW80TK65 − 650 39 23 81 1.5 40 − − − − −
Ignition timing signal RGW80TK65E − 650 39 23 81 1.5 40 − 46 26 1.45 50
RGW00TK65 − 650 45 26 89 1.5 50 − − − − − TO-3PFM
Packages indicate JEDEC notation. RGW60TK65D − 650 33 20 72 1.5 30 − 27 16 1.45 20
( ) refer to ROHM package type. IGBT
RGW80TK65D − 650 39 23 81 1.5 40 − 27 16 1.45 20
RGW00TK65D − 650 45 26 89 1.5 50 − 34 19 1.45 30
ECU RGCL60TS60 − 600 48 30 111 1.4 30 − − − − −
RGCL80TS60 − 600 65 40 148 1.4 40 − − − − −
TO-247N
RGCL60TS60D − 600 48 30 111 1.4 30 − 35 20 1.45 20
RGCL80TS60D − 600 65 40 148 1.4 40 − 35 20 1.45 20
RGCL60TK60 − 600 30 18 54 1.4 30 − − − − −
RGCL80TK60 − 600 35 21 57 1.4 40 − − − − −
TO-3PFM
TO-252 RGCL60TK60D − 600 30 18 54 1.4 30 − 26 15 1.45 20
Ignition IGBTs RGCL80TK60D − 600 35 21 57 1.4 40 − 26 15 1.45 20
RGC80TSX8R − 1,800 80 40 535 2.2 40 − 80 40 1.8 40 TO-247N
RGT8BM65D − 650 8 4 62 1.65 4 5 7 4 1.45 4
Automotive VCE(sat) RGT16BM65D − 650 16 8 94 1.65 8 5 16 8 1.4 8
TO-252
VCES VGES IC PD Eas Equivalent
Part No. Grade Typ. Package RGT8NS65D − 650 8 4 65 1.65 4 5 7 4 1.45 4
(V) (V) (A) (W) (mJ) Circuit Diagram
(AEC-Q101) (V) RGT16NS65D − 650 16 8 94 1.65 8 5 16 8 1.4 8
TO-263S(LPDS)/
RGT30NS65D − 650 30 15 133 1.65 15 5 26 15 1.5 15
TO-262
RGT40NS65D − 650 40 20 161 1.65 20 5 35 20 1.45 20
RGPZ10BM40FH YES 430±30 ±10 20 107 250 1.6 RGT50NS65D − 650 48 25 194 1.65 25 5 35 20 1.45 20
RGT8NL65D − 650 8 4 65 1.65 4 5 7 4 1.45 4
TO-263L RGT16NL65D − 650 16 8 94 1.65 8 5 16 8 1.4 8

☆ RGPZ30BM56HR YES 560±30 ±10 30 166 300 1.4 (LPDL) RGT30NL65D − 650 30 15 133 1.65 15 5 26 15 1.5 15 TO-263L(LPDL)
RGT40NL65D − 650 40 20 161 1.65 20 5 35 20 1.45 20
TO-252 RGT50NL65D − 650 48 25 194 1.65 25 5 35 20 1.45 20
RGT16TM65D − 650 9 5 22 1.65 8 5 13 7 1.4 8
RGPR10BM40FH YES 430±30 ±10 20 107 250 1.6 RGT30TM65D − 650 14 8 32 1.65 15 5 17 9 1.5 15
TO-220NFM
RGT40TM65D − 650 17 10 39 1.65 20 5 22 13 1.45 20
RGT50TM65D − 650 21 13 47 1.65 25 5 22 13 1.45 20
☆ RGPR20BM36HR YES 360±30 ±10 20 107 250 1.6 RGTV60TS65 − 650 60 30 194 1.5 30 2 − − − −
RGTV00TS65 − 650 95 50 276 1.5 50 2 − − − −
RGTVX6TS65 − 650 144 80 404 1.5 80 2 − − − −
TO-263S
RGPR20NS43HR YES 430±30 ±10 20 107 250 1.6 (LPDS) TO-220NFM
RGTV60TS65D − 650 60 30 194 1.5 30 2 56 30 1.45 30
RGTV00TS65D − 650 95 50 276 1.5 50 2 84 50 1.45 50
TO-247N
RGT40TS65D − 650 40 20 144 1.65 20 5 35 20 1.45 20
☆ RGPR30BM56HR YES 560±30 ±10 30 166 300 1.4 RGT50TS65D − 650 48 25 174 1.65 25 5 35 20 1.45 20
RGT60TS65D − 650 55 30 194 1.65 30 5 40 20 1.35 20
TO-252 RGT80TS65D − 650 70 40 234 1.65 40 5 40 20 1.35 20
Packages indicate JEDEC notation. RGT00TS65D − 650 85 50 277 1.65 50 5 50 30 1.45 30
RGPR30BM40HR YES 400±30 ±10 30 125 300 1.6 ( ) refer to ROHM package type. RGTV60TK65 − 650 33 20 76 1.5 30 2 − − − −
RGTV00TK65 − 650 45 26 94 1.5 50 2 − − − −
TO-3PFM
RGTV60TK65D − 650 33 20 76 1.5 30 2 34 19 1.45 30
RGPR30NS40HR YES 400±30 ±10 30 125 300 1.6 RGTV00TK65D − 650 45 26 94 1.5 50 2 46 26 1.45 50
TO-263S RGS60TS65DHR YES 650 56 30 223 1.65 30 8 56 30 1.45 30
(LPDS) RGS80TS65DHR YES 650 73 40 272 1.65 40 8 56 30 1.45 30
TO-247N
☆ RGPR50NS45HR YES 450±30 ±10 50 187 500 1.6 RGS00TS65DHR YES 650 88 50 326 1.65 50 8 56 30 1.45 30
RGS00TS65EHR YES 650 88 50 326 1.65 50 8 84 50 1.45 50

Packages indicate JEDEC notation. ( ) refer to ROHM package type. ☆ : Under Development Packages indicate JEDEC notation. ( ) refer to ROHM package type.

15 Power Device 16
 IGBTs (Insulated Gate Bipolar Transistor)

IGBTs ( Insulated Gate Bipolar Transistor ) Field Stop ROHM utilizes original trench gate and thin wafer technologies
to achieve low VCE(sat) and reduced switching loss.
Features
● Low VCE(sat) & switching loss
Trench IGBTs ● A broad lineup is offered that makes it possible to select
the ideal solution based on set requirements
● Automotive-grade (AEC-Q101 qualified) RGS series

Contributes to greater efficiency and energy savings Portfolio of ROHMs' Field Stop Trench IGBTs
Automotive Grade SC

in a variety of high voltage, large current applications

Part No. VCE(sat) SW Lineup
Available (AEC-Q101) SOA
3rd-Generation
High speed switching RGW series − ◎ ◎ − ☆650V 30 to 50A@100°C
SCSOA 2μs guaranteed RGTV series − ◎ ◎ 2μs ☆650V 30 to 80A@100°C
2nd-Generation
Low VCE(sat) RGCL series − ◎ − − 600V 30 to 40A@100°C
High speed switching RGTH series − ○ ○ − 650V 20 to 50A@100°C
TO-247N
SCSOA 5μs guaranteed RGT series − ○ − ◎ 650V 4 to 50A@100°C
5μs

○ − ◎ 650V 30 to 50A@100°C
8μs
SCSOA 8 to 10μs guaranteed RGS series YES
○ − ◎  650V 30 to 50A@100°C
10μs ☆1,200V 25 to 40A@100°C

☆ : Under Development

Field Stop Trench IGBTs

Ignition IGBTs High reliability products optimized for automotive Features

● Class-leading efficiency achieved through an optimized
Part No.
Automotive
Grade
VCES
(V) TC =
IC(A)
TC =
PD
(W)
VCE(sat)
Typ. IC
tsc
Min.
IF(Diode)(A)
TC = TC =
VF(Diode)
Typ. IF Package
ignition applications featuring both low VCE(sat) and (AEC-Q101) 25°C 100°C (V) (A) (μsec) 25°C 100°C (V) (A)
tradeoff between VCE(sat) and avalanche tolerance TO-3PFM RGTH40TS65 − 650 40 20 144 1.6 20 − − − − −
high avalanche tolerance. RGTH50TS65 − 650 50 25 174 1.6 25 − − − − −
● Built-in Gate protection diode
RGTH60TS65 − 650 58 30 194 1.6 30 − − − − −
● Gate resistance/Gate-emitter resistance (optional) RGTH80TS65 − 650 70 40 234 1.6 40 − − − − −
RGTH00TS65 − 650 85 50 277 1.6 50 − − − − −
TO-247N
● Automotive-grade (AEC-Q101 qualified) RGTH40TS65D − 650 40 20 144 1.6 20 − 35 20 1.45 20
RGTH50TS65D − 650 50 25 174 1.6 25 − 35 20 1.45 20
*October 2018 ROHM study RGTH60TS65D − 650 58 30 194 1.6 30 − 40 20 1.35 20
RGTH80TS65D − 650 70 40 234 1.6 40 − 40 20 1.35 20
■ Internal Circuit Diagram RGTH00TS65D − 650 85 50 277 1.6 50 − 50 30 1.45 30
RGTH40TK65 − 650 23 14 56 1.6 20 − − − − −
TO-252 RGTH50TK65 − 650 26 16 59 1.6 25 − − − − −
Ex. Automotive Ignition Coil Drive Boost coil
RGTH60TK65 − 650 28 17 61 1.6 30 − − − − −
TO-263S RGTH80TK65 − 650 31 19 66 1.6 40 − − − − −
(LPDS) RGTH00TK65 − 650 35 21 72 1.6 50 − − − − −
TO-3PFM
RGTH40TK65D − 650 23 14 56 1.6 20 − 26 15 1.45 20
RGTH50TK65D − 650 26 16 59 1.6 25 − 26 15 1.45 20
RGTH60TK65D − 650 28 17 61 1.6 30 − 28 16 1.35 20
RGTH80TK65D − 650 31 19 66 1.6 40 − 28 16 1.35 20
RGTH00TK65D − 650 35 21 72 1.6 50 − 34 19 1.45 30
Battery RGW60TS65 − 650 60 30 178 1.5 30 − − − − −
RGW80TS65 − 650 78 40 214 1.5 40 − − − − −
Spark plug RGW00TS65 − 650 96 50 254 1.5 50 − − − − −
TO-247N
TO-263S RGW80TS65D − 650 78 40 214 1.5 40 − 40 20 1.45 20
RGW60TS65D − 650 60 30 178 1.5 30 − 40 20 1.45 20
(LPDS) RGW00TS65D − 650 96 50 254 1.5 50 − 56 30 1.45 30
RGW60TK65 − 650 33 20 72 1.5 30 − − − − −
TO-262 RGW80TK65 − 650 39 23 81 1.5 40 − − − − −
Ignition timing signal RGW80TK65E − 650 39 23 81 1.5 40 − 46 26 1.45 50
RGW00TK65 − 650 45 26 89 1.5 50 − − − − − TO-3PFM
Packages indicate JEDEC notation. RGW60TK65D − 650 33 20 72 1.5 30 − 27 16 1.45 20
( ) refer to ROHM package type. IGBT
RGW80TK65D − 650 39 23 81 1.5 40 − 27 16 1.45 20
RGW00TK65D − 650 45 26 89 1.5 50 − 34 19 1.45 30
ECU RGCL60TS60 − 600 48 30 111 1.4 30 − − − − −
RGCL80TS60 − 600 65 40 148 1.4 40 − − − − −
TO-247N
RGCL60TS60D − 600 48 30 111 1.4 30 − 35 20 1.45 20
RGCL80TS60D − 600 65 40 148 1.4 40 − 35 20 1.45 20
RGCL60TK60 − 600 30 18 54 1.4 30 − − − − −
RGCL80TK60 − 600 35 21 57 1.4 40 − − − − −
TO-3PFM
TO-252 RGCL60TK60D − 600 30 18 54 1.4 30 − 26 15 1.45 20
Ignition IGBTs RGCL80TK60D − 600 35 21 57 1.4 40 − 26 15 1.45 20
RGC80TSX8R − 1,800 80 40 535 2.2 40 − 80 40 1.8 40 TO-247N
RGT8BM65D − 650 8 4 62 1.65 4 5 7 4 1.45 4
Automotive VCE(sat) RGT16BM65D − 650 16 8 94 1.65 8 5 16 8 1.4 8
TO-252
VCES VGES IC PD Eas Equivalent
Part No. Grade Typ. Package RGT8NS65D − 650 8 4 65 1.65 4 5 7 4 1.45 4
(V) (V) (A) (W) (mJ) Circuit Diagram
(AEC-Q101) (V) RGT16NS65D − 650 16 8 94 1.65 8 5 16 8 1.4 8
TO-263S(LPDS)/
RGT30NS65D − 650 30 15 133 1.65 15 5 26 15 1.5 15
TO-262
RGT40NS65D − 650 40 20 161 1.65 20 5 35 20 1.45 20
RGPZ10BM40FH YES 430±30 ±10 20 107 250 1.6 RGT50NS65D − 650 48 25 194 1.65 25 5 35 20 1.45 20
RGT8NL65D − 650 8 4 65 1.65 4 5 7 4 1.45 4
TO-263L RGT16NL65D − 650 16 8 94 1.65 8 5 16 8 1.4 8

☆ RGPZ30BM56HR YES 560±30 ±10 30 166 300 1.4 (LPDL) RGT30NL65D − 650 30 15 133 1.65 15 5 26 15 1.5 15 TO-263L(LPDL)
RGT40NL65D − 650 40 20 161 1.65 20 5 35 20 1.45 20
TO-252 RGT50NL65D − 650 48 25 194 1.65 25 5 35 20 1.45 20
RGT16TM65D − 650 9 5 22 1.65 8 5 13 7 1.4 8
RGPR10BM40FH YES 430±30 ±10 20 107 250 1.6 RGT30TM65D − 650 14 8 32 1.65 15 5 17 9 1.5 15
TO-220NFM
RGT40TM65D − 650 17 10 39 1.65 20 5 22 13 1.45 20
RGT50TM65D − 650 21 13 47 1.65 25 5 22 13 1.45 20
☆ RGPR20BM36HR YES 360±30 ±10 20 107 250 1.6 RGTV60TS65 − 650 60 30 194 1.5 30 2 − − − −
RGTV00TS65 − 650 95 50 276 1.5 50 2 − − − −
RGTVX6TS65 − 650 144 80 404 1.5 80 2 − − − −
TO-263S
RGPR20NS43HR YES 430±30 ±10 20 107 250 1.6 (LPDS) TO-220NFM
RGTV60TS65D − 650 60 30 194 1.5 30 2 56 30 1.45 30
RGTV00TS65D − 650 95 50 276 1.5 50 2 84 50 1.45 50
TO-247N
RGT40TS65D − 650 40 20 144 1.65 20 5 35 20 1.45 20
☆ RGPR30BM56HR YES 560±30 ±10 30 166 300 1.4 RGT50TS65D − 650 48 25 174 1.65 25 5 35 20 1.45 20
RGT60TS65D − 650 55 30 194 1.65 30 5 40 20 1.35 20
TO-252 RGT80TS65D − 650 70 40 234 1.65 40 5 40 20 1.35 20
Packages indicate JEDEC notation. RGT00TS65D − 650 85 50 277 1.65 50 5 50 30 1.45 30
RGPR30BM40HR YES 400±30 ±10 30 125 300 1.6 ( ) refer to ROHM package type. RGTV60TK65 − 650 33 20 76 1.5 30 2 − − − −
RGTV00TK65 − 650 45 26 94 1.5 50 2 − − − −
TO-3PFM
RGTV60TK65D − 650 33 20 76 1.5 30 2 34 19 1.45 30
RGPR30NS40HR YES 400±30 ±10 30 125 300 1.6 RGTV00TK65D − 650 45 26 94 1.5 50 2 46 26 1.45 50
TO-263S RGS60TS65DHR YES 650 56 30 223 1.65 30 8 56 30 1.45 30
(LPDS) RGS80TS65DHR YES 650 73 40 272 1.65 40 8 56 30 1.45 30
TO-247N
☆ RGPR50NS45HR YES 450±30 ±10 50 187 500 1.6 RGS00TS65DHR YES 650 88 50 326 1.65 50 8 56 30 1.45 30
RGS00TS65EHR YES 650 88 50 326 1.65 50 8 84 50 1.45 50

Packages indicate JEDEC notation. ( ) refer to ROHM package type. ☆ : Under Development Packages indicate JEDEC notation. ( ) refer to ROHM package type.

15 Power Device 16
 High Withstand Voltage Discretes

High Withstand
Voltage Discretes 4th Generation
Fast Recovery
Supports high surge circuitry and increases withstand voltage while
significantly reduces switching noise
Features
● Higher guaranteed withstand voltage Application
Diodes        600V ⇒ 650V  ● PFC Circuit  ・Large household appliances such as AC
Supports high withstand voltage, ● Significantly reduced recovery noise
       ・Onboard Chargers                
● Achieves tighter guaranteed VF and
        ・Industrial equipment such as charging stands
high surge circuits        IR values ● Rectifier Circuit ・LLC converter/full bridge
● AEC-Q101 compliance (planned)

trr(ns)
■ Evolution to the
  4th Generation 80
3rd-Generation High-speed trr series : RFUH⇒RFS
RFNL series Low VF series : RFN⇒RFL
(Super Low VF type)
70 Both series achieve equivalent trr performance
TO-220ACFP with lower noise and tighter VF/IR values
RFN series
60 (Low VF type)
4th Generation
RFUH series
RFL (High-Speed trr Soft Recovery type)
50 series

Fast Recovery Provides optimized charac- Features ● Ideal for PFC (Power Factor Correction) ● Improved characteristics
Low VF type
fic
ien
cy

teristics for each application ● Broad lineup ● Ultra-low VF units/High-speed trr models 40 Ef
gh
Diodes 30
Hi High-speed trr type
RFS
Lower VF contributes to greater New processes utilized to series
■ High efficiency/low VF energy savings ■ High-speed trr characteristics achieve ultra-high-speed trr
RFV series
100
VF - IF CHARACTERISTICS TO-247-2L 20 (High-Speed trr Hard Recovery type)
Current
RFNL series
Reverse recovery 1.3 1.5 1.8 2.0 2.2 2.4 2.8 3.0 VF(V)
RFV series RFUH series
10 time reduced
RFUH series RFV series by 40% ■ Significantly Reduced
Significantly reduced
  recovery noise
RFNL series VR
  Recovery Noise
I F (A)

1
TO-220ACFP
RFN series 16 % lower V F IF
(Compared with the
0.1 conventional RFN series) RFUH series
5A RFS30TZ6S(4th Generation)
Tj=25°C Tj=25°C
50ns
0.01
RFUH30TS6S(3rd-Generation)
0 500 1,000 1,500 2,000 2,500 3,000 3,500 4,000 4,500 TO-247-3L
VF(mV)
Fast Recovery Diodes
Example) R F N L 5 B M 6 S F H T L
TO-220AC Part No. Grade Code Taping Code

RFNL series : Super Low VF type

Grade Code Automotive Absolute Maximum Ratings(TC=25°C) Electrical Characteristics(Tj=25°C)*1 Equivalent

Taping Grade 10A
100V
Part No.
Code (AEC- VRM VR IO IFSM (A) VF (V) IR (μA) trr(ns) Package Circuit
General Automotive* 60Hz. Diagram 50ns
Q101) (V) (V) (A) 1   Max. IF (A) Max. VR(V) Max. IF (A) IR (A) IF=30A, VR=400V, dIF/dt=-500A/μs, Tj =125°C

RFNL5BM6S − FH TL YES 600 600 5 50 1.3 5 10 600 60 0.5 1 TO-252

TO-252 Fast Recovery Diodes
〔DPAK〕
〔DPAK〕 R F S 2 0 T J 6 S F H G C 9
＊ − −
Example)
RFNL5BGE6S TL 600 600 5 50 1.3 5 10 600 60 0.5 1
Grade Code Taping Code
RFNL5TJ6S G FHG C9 YES 600 600 5 50 1.3 5 10 600 60 0.5 1 Part No.

Packages indicate JEDEC notation. 4th Generation RFS series High-Speed trr type
1.25 8
〔 〕refer to GENERAL code. RFNL10TJ6S G FHG C9 YES 600 600 10 120 10 600 65 0.5 1
1.3 10 TO-220ACFP Grade Code Automotive Absolute Maximum Ratings(TC=25°C) Electrical Characteristics( Tj=25°C)*1 Equivalent
Taping Grade
RFNL15TJ6S G FHG C9 YES 600 600 15 160 1.3 15 10 600 65 0.5 1 Part No. VRM VR IO I FSM (A)
VF (V) IR (μA) trr(ns) Package Circuit
Code (AEC- 60Hz.
General Automotive* Q101) (V) (V) (A) 1   Max. IF (A) Max. VR(V) Max. IF (A) IR (A) Diagram
RFNL20TJ6S G FHG C9 YES 600 600 20 200 1.3 20 10 600 70 0.5 1
☆ RFS20TJ6S G FHG C9 YES 650 650 20 120 2.3 20 3 650 35 0.5 1 TO-220ACFP
RFV series : Super High-Speed trr Hard Recovery type ☆ RFS30TSG6D ＊ − − − 650 650 30 80 2.3 15 3 650 35 0.5 1 TO-247-3L
Automotive Absolute Maximum Ratings(TC=25°C) Electrical Characteristics(Tj=25°C)*1 Equivalent ☆ RFS30TZG6S ＊ − − − 650 650 30 160 2.3 30 5 650 45 0.5 1 TO-247-2L
Grade Code
Taping Grade
Part No. V V I I FSM (A)
V (V) IR (μA) trr(ns) Package Circuit ☆ RFS30TZ6S G FHG C11 YES 650 650 30 160 2.3 30 5 650 45 0.5 1 TO-247N-2L
Code (AEC- RM R O
60Hz.
F
General Automotive* Q101) (V) (V) (A) 1   Max. IF (A) Max. VR(V) Max. IF (A) IR (A) Diagram
☆ RFS60TZG6S ＊ − − − 650 650 60 180 2.3 60 10 650 65 0.5 1 TO-247-2L
RFV5BM6S ＊ FH TL YES 600 600 5 60 2.8 5 10 600 20 0.5 1 TO-252 ☆ RFS60TZ6S G FHG C11 YES 650 650 60 180 2.3 60 10 650 65 0.5 1 TO-247N-2L
RFV8BM6S ＊ FH TL YES 600 600 8 100 2.8 8 10 600 25 0.5 1 〔DPAK〕

RFVS8TJ6S G − C9 − 600 600 8 60 3.0 8 10 600 20 0.5 1 4th Generation RFL series Low VF type
RFV8TJ6S G − C9 − 600 600 8 100 2.8 8 10 600 25 0.5 1 Grade Code Automotive Absolute Maximum Ratings(TC=25°C) Electrical Characteristics ( Tj=25°C)*1 Equivalent
TO-220ACFP Taping Grade
RFV12TJ6S G − C9 − 600 600 12 120 2.8 12 10 600 25 0.5 1 Part No.
Code (AEC- VRM VR IO IFSM (A) VF (V) IR (μA) trr(ns) Package Circuit
General Automotive* 60Hz. Diagram
Q101) (V) (V) (A) 1   Max. IF (A) Max. VR(V) Max. IF (A) IR (A)
RFV15TJ6S G − C9 − 600 600 15 150 2.8 15 10 600 30 0.5 1
☆ RFL30TZG6S ＊ − − − 650 650 30 180 1.5 30 5 650 60 0.5 1 TO-247-2L
RFVS8TG6S G − C9 − 600 600 8 60 3.0 8 10 600 20 0.5 1
☆ RFL30TZ6S G FHG C11 YES 650 650 30 180 1.5 30 5 650 60 0.5 1 TO-247N-2L
RFV8TG6S G − C9 − 600 600 8 100 2.8 8 10 600 25 0.5 1
☆ RFL60TZG6S ＊ − − − 650 650 60 200 1.5 60 10 650 80 0.5 1 TO-247-2L
RFV12TG6S G − C9 − 600 600 12 120 2.8 12 10 600 25 0.5 1 TO-220AC
☆ RFL60TZ6S G FHG C11 YES 650 650 60 200 1.5 60 10 650 80 0.5 1 TO-247N-2L
RFV15TG6S G − C9 − 600 600 15 150 2.8 15 10 600 30 0.5 1
Please note that 4th generation fast recovery diodes are currently under development, and specifications are subject to change
RFV30TG6S G − C9 − 600 600 30 200 2.8 30 10 600 40 0.5 1
without notice. ＊General part no. have no grade code. *1: Value/Chip ☆ : Under Development
Packages indicate JEDEC notation.〔 〕refer to GENERAL code. ＊General part no. have no grade code. *1: Value/Chip
17 Power Device 18
 High Withstand Voltage Discretes

High Withstand
Voltage Discretes 4th Generation
Fast Recovery
Supports high surge circuitry and increases withstand voltage while
significantly reduces switching noise
Features
● Higher guaranteed withstand voltage Application
Diodes        600V ⇒ 650V  ● PFC Circuit  ・Large household appliances such as AC
Supports high withstand voltage, ● Significantly reduced recovery noise
       ・Onboard Chargers                
● Achieves tighter guaranteed VF and
        ・Industrial equipment such as charging stands
high surge circuits        IR values ● Rectifier Circuit ・LLC converter/full bridge
● AEC-Q101 compliance (planned)

trr(ns)
■ Evolution to the
  4th Generation 80
3rd-Generation High-speed trr series : RFUH⇒RFS
RFNL series Low VF series : RFN⇒RFL
(Super Low VF type)
70 Both series achieve equivalent trr performance
TO-220ACFP with lower noise and tighter VF/IR values
RFN series
60 (Low VF type)
4th Generation
RFUH series
RFL (High-Speed trr Soft Recovery type)
50 series

Fast Recovery Provides optimized charac- Features ● Ideal for PFC (Power Factor Correction) ● Improved characteristics
Low VF type
fic
ien
cy

teristics for each application ● Broad lineup ● Ultra-low VF units/High-speed trr models 40 Ef
gh
Diodes 30
Hi High-speed trr type
RFS
Lower VF contributes to greater New processes utilized to series
■ High efficiency/low VF energy savings ■ High-speed trr characteristics achieve ultra-high-speed trr
RFV series
100
VF - IF CHARACTERISTICS TO-247-2L 20 (High-Speed trr Hard Recovery type)
Current
RFNL series
Reverse recovery 1.3 1.5 1.8 2.0 2.2 2.4 2.8 3.0 VF(V)
RFV series RFUH series
10 time reduced
RFUH series RFV series by 40% ■ Significantly Reduced
Significantly reduced
  recovery noise
RFNL series VR
  Recovery Noise
I F (A)

1
TO-220ACFP
RFN series 16 % lower V F IF
(Compared with the
0.1 conventional RFN series) RFUH series
5A RFS30TZ6S(4th Generation)
Tj=25°C Tj=25°C
50ns
0.01
RFUH30TS6S(3rd-Generation)
0 500 1,000 1,500 2,000 2,500 3,000 3,500 4,000 4,500 TO-247-3L
VF(mV)
Fast Recovery Diodes
Example) R F N L 5 B M 6 S F H T L
TO-220AC Part No. Grade Code Taping Code

RFNL series : Super Low VF type

Grade Code Automotive Absolute Maximum Ratings(TC=25°C) Electrical Characteristics(Tj=25°C)*1 Equivalent

Taping Grade 10A
100V
Part No.
Code (AEC- VRM VR IO IFSM (A) VF (V) IR (μA) trr(ns) Package Circuit
General Automotive* 60Hz. Diagram 50ns
Q101) (V) (V) (A) 1   Max. IF (A) Max. VR(V) Max. IF (A) IR (A) IF=30A, VR=400V, dIF/dt=-500A/μs, Tj =125°C

RFNL5BM6S − FH TL YES 600 600 5 50 1.3 5 10 600 60 0.5 1 TO-252

TO-252 Fast Recovery Diodes
〔DPAK〕
〔DPAK〕 R F S 2 0 T J 6 S F H G C 9
＊ − −
Example)
RFNL5BGE6S TL 600 600 5 50 1.3 5 10 600 60 0.5 1
Grade Code Taping Code
RFNL5TJ6S G FHG C9 YES 600 600 5 50 1.3 5 10 600 60 0.5 1 Part No.

Packages indicate JEDEC notation. 4th Generation RFS series High-Speed trr type
1.25 8
〔 〕refer to GENERAL code. RFNL10TJ6S G FHG C9 YES 600 600 10 120 10 600 65 0.5 1
1.3 10 TO-220ACFP Grade Code Automotive Absolute Maximum Ratings(TC=25°C) Electrical Characteristics( Tj=25°C)*1 Equivalent
Taping Grade
RFNL15TJ6S G FHG C9 YES 600 600 15 160 1.3 15 10 600 65 0.5 1 Part No. VRM VR IO I FSM (A)
VF (V) IR (μA) trr(ns) Package Circuit
Code (AEC- 60Hz.
General Automotive* Q101) (V) (V) (A) 1   Max. IF (A) Max. VR(V) Max. IF (A) IR (A) Diagram
RFNL20TJ6S G FHG C9 YES 600 600 20 200 1.3 20 10 600 70 0.5 1
☆ RFS20TJ6S G FHG C9 YES 650 650 20 120 2.3 20 3 650 35 0.5 1 TO-220ACFP
RFV series : Super High-Speed trr Hard Recovery type ☆ RFS30TSG6D ＊ − − − 650 650 30 80 2.3 15 3 650 35 0.5 1 TO-247-3L
Automotive Absolute Maximum Ratings(TC=25°C) Electrical Characteristics(Tj=25°C)*1 Equivalent ☆ RFS30TZG6S ＊ − − − 650 650 30 160 2.3 30 5 650 45 0.5 1 TO-247-2L
Grade Code
Taping Grade
Part No. V V I I FSM (A)
V (V) IR (μA) trr(ns) Package Circuit ☆ RFS30TZ6S G FHG C11 YES 650 650 30 160 2.3 30 5 650 45 0.5 1 TO-247N-2L
Code (AEC- RM R O
60Hz.
F
General Automotive* Q101) (V) (V) (A) 1   Max. IF (A) Max. VR(V) Max. IF (A) IR (A) Diagram
☆ RFS60TZG6S ＊ − − − 650 650 60 180 2.3 60 10 650 65 0.5 1 TO-247-2L
RFV5BM6S ＊ FH TL YES 600 600 5 60 2.8 5 10 600 20 0.5 1 TO-252 ☆ RFS60TZ6S G FHG C11 YES 650 650 60 180 2.3 60 10 650 65 0.5 1 TO-247N-2L
RFV8BM6S ＊ FH TL YES 600 600 8 100 2.8 8 10 600 25 0.5 1 〔DPAK〕

RFVS8TJ6S G − C9 − 600 600 8 60 3.0 8 10 600 20 0.5 1 4th Generation RFL series Low VF type
RFV8TJ6S G − C9 − 600 600 8 100 2.8 8 10 600 25 0.5 1 Grade Code Automotive Absolute Maximum Ratings(TC=25°C) Electrical Characteristics ( Tj=25°C)*1 Equivalent
TO-220ACFP Taping Grade
RFV12TJ6S G − C9 − 600 600 12 120 2.8 12 10 600 25 0.5 1 Part No.
Code (AEC- VRM VR IO IFSM (A) VF (V) IR (μA) trr(ns) Package Circuit
General Automotive* 60Hz. Diagram
Q101) (V) (V) (A) 1   Max. IF (A) Max. VR(V) Max. IF (A) IR (A)
RFV15TJ6S G − C9 − 600 600 15 150 2.8 15 10 600 30 0.5 1
☆ RFL30TZG6S ＊ − − − 650 650 30 180 1.5 30 5 650 60 0.5 1 TO-247-2L
RFVS8TG6S G − C9 − 600 600 8 60 3.0 8 10 600 20 0.5 1
☆ RFL30TZ6S G FHG C11 YES 650 650 30 180 1.5 30 5 650 60 0.5 1 TO-247N-2L
RFV8TG6S G − C9 − 600 600 8 100 2.8 8 10 600 25 0.5 1
☆ RFL60TZG6S ＊ − − − 650 650 60 200 1.5 60 10 650 80 0.5 1 TO-247-2L
RFV12TG6S G − C9 − 600 600 12 120 2.8 12 10 600 25 0.5 1 TO-220AC
☆ RFL60TZ6S G FHG C11 YES 650 650 60 200 1.5 60 10 650 80 0.5 1 TO-247N-2L
RFV15TG6S G − C9 − 600 600 15 150 2.8 15 10 600 30 0.5 1
Please note that 4th generation fast recovery diodes are currently under development, and specifications are subject to change
RFV30TG6S G − C9 − 600 600 30 200 2.8 30 10 600 40 0.5 1
without notice. ＊General part no. have no grade code. *1: Value/Chip ☆ : Under Development
Packages indicate JEDEC notation.〔 〕refer to GENERAL code. ＊General part no. have no grade code. *1: Value/Chip
17 Power Device 18
 High Withstand Voltage Discretes

Super Junction Achieves low noise Features

Low Noise type
and low ON ● Superior A・Ron characteristics (40% lower than conventional products) Product No. RDS(on)(Ω) Qg Typ.
MOSFETs Polarity VDSS ID PD(W) (nC)
Drive
● Select from among 3 different series based on application needs Taping (TC= VGS=15V Voltage Package
resistance Part No. Code
(ch) (V) (A)
25°C) Typ. Max.
VGS=
15V
(V)
( low noise, fast switching, fast reverse recovery time) R6011END3 TL1 600 11 124 0.340 0.390 32 10
● Broad package lineup, from TO-247 to TO-252 R6009END3 TL1 600 9 94 0.500 0.535 23 10
● Exceedingly low noise makes them ideal for power supply circuits requiring R6007END3 TL1 600 7 78 0.570 0.620 20 10
R6004END3 TL1 600 4 59 0.900 0.980 15 10
noise countermeasures; suitable replacements for planar types
R6002END3 TL1 600 1.7 26 2.800 3.400 6.5 10 TO-252
N
☆ R6511END3 TL1 650 11 124 0.360 0.400 32 10 〔DPAK〕
TO-252 ☆ R6509END3 TL1 650 9 94 0.530 0.585 24 10
〔DPAK〕 ■ Noise Evaluation ☆ R6507END3 TL1 650 7 78 0.605 0.665 20 10
☆ R6504END3 TL1 650 4 59 0.955 1.050 15 10
Horizontally polarized radiant noise (dB μV/m), 146W input
☆ R6502END3 TL1 650 1.7 24 3.000 3.300 6.5 10
R6024ENJ TL 600 24 245 0.150 0.165 70 10
60
R6020ENJ TL 600 20 231 0.170 0.196 60 10
TO-263S Maximum Amount
R6020ENx series(Low Noise type) R6015ENJ TL 600 15 184 0.260 0.290 40 10
（LPTS） 50
［SC-83］ R6020KNx seires(High Efficiency type) R6011ENJ TL 600 11 124 0.340 0.390 32 10
〔D2PAK〕 Competition A R6009ENJ TL 600 9 94 0.500 0.535 23 10
40 R6007ENJ TL 600 7 78 0.570 0.620 20 10 TO-263S
R6004ENJ TL 600 4 58 0.900 0.980 15 10 （LPTS）
dB μV/m

N
30 R6524ENJ TL 650 24 245 0.160 0.185 70 10 ［SC-83］
The R6xxxENx series, featuring R6520ENJ TL 650 20 231 0.185 0.205 61 10 〔D2PAK〕
20 exceedingly low noise, is recommended R6515ENJ TL 650 15 184 0.280 0.315 40 10
for power supply circuits requiring noise R6511ENJ TL 650 11 124 0.360 0.400 32 10
TO-220FM
10 countermeasures R6509ENJ TL 650 9 94 0.530 0.585 24 10
R6507ENJ TL 650 7 78 0.605 0.665 20 10

0 R6504ENJ TL 650 4 58 0.955 1.050 15 10

30 300 R6030ENX ー* 600 30 86 0.115 0.130 85 10
Frequency(MHz)
R6024ENX ー* 600 24 74 0.150 0.165 70 10
R6020ENX ー* 600 20 68 0.170 0.196 60 10
R6015ENX ー* 600 15 60 0.260 0.290 40 10
TO-3PF ■ Efficiency Evaluation R6011ENX ー* 600 11 53 0.340 0.390 32 10
Switching Loss Conduction Loss R6009ENX ー* 600 9 48 0.500 0.535 23 10
The fast-switching R6xxxKNx series are R6007ENX ー* 600 7 46 0.570 0.620 20 10

recommended for power supply circuits

1.60 1.50 R6004ENX ー* 600 4 35 0.900 0.980 15 10
N TO-220FM
R6530ENX ー* 650 30 86 0.125 0.140 90 10
demanding lower loss and greater 1.40
R6524ENX ー* 650 24 74 0.160 0.185 70 10
efficiency
1.20
1.20 R6520ENX ー* 650 20 68 0.185 0.205 61 10
TO-247
1.02 R6515ENX ー* 650 15 60 0.280 0.315 40 10
Evaluation Circuit : PFC Circuit
1.00
Critical Mode 1.14 R6511ENX ー* 650 11 53 0.360 0.400 32 10
Loss(W)

Input 100V/60Hz
Output 120W 0.80 Switching 0.82 R6509ENX ー* 650 9 48 0.530 0.585 24 10
loss reduced 0.68 R6507ENX ー* 650 7 46 0.605 0.665 20 10
0.60 40% R6504ENX ー* 650 4 35 0.955 1.050 15 10
R6035ENZ C8 600 35 102 0.095 0.102 110 10
0.40
R6030ENZ C8 600 30 86 0.115 0.130 85 10
TO-220AB
0.20 0.36 0.34 0.38 R6024ENZ C8 600 24 74 0.150 0.165 70 10
R6020ENZ C8 600 20 68 0.170 0.196 60 10
0.00
R6015ENZ C8 600 15 60 0.260 0.290 40 10
Packages indicate JEDEC notation. R6020ENx series R6020KNx series Competition N TO-3PF
IC (Low Noise) (High Efficiency) (High Efficiency) R6535ENZ C8 650 35 102 0.098 0.115 113 10
( ) refer to ROHM package type.
[ ] refer to JEITA code. R6530ENZ C8 650 30 86 0.125 0.140 90 10
〔 〕refer to GENERAL code. R6524ENZ C8 650 24 74 0.160 0.185 70 10
R6520ENZ C8 650 20 68 0.185 0.205 61 10
R6515ENZ C8 650 15 60 0.280 0.315 40 10
■ Fast Reverse Recovery Time
R6076ENZ4 C13 600 76 735 0.038 0.042 260 10
R6047ENZ4 C13 600 47 481 0.066 0.072 145 10
Improved body diode characteristics increase energy savings
☆ R6035ENZ4 C13 600 35 379 0.095 0.102 110 10
☆ R6030ENZ4 C13 600 30 305 0.115 0.130 85 10
trr
Super Junction MOSFETs(Normal trr type)
Conventional Circuit PrestoMOSTM ☆ R6024ENZ4 C13 600 24 245 0.150 0.165 70 10
☆ R6020ENZ4
IF
C13 600 20 231 0.170 0.196 60 10
N TO-247
t R6576ENZ4 C13 650 76 735 0.040 0.046 260 10
Built-in ☆ R6547ENZ4 C13 650 47 481 0.070 0.080 145 10
FRD
Fewer ☆ R6535ENZ4 C13 650 35 379 0.098 0.115 110 10
parts ☆ R6530ENZ4 C13 650 30 305 0.125 0.140 85 10
IF
lower ☆ R6524ENZ4 C13 650 24 245 0.160 0.185 70 10
t ☆ R6520ENZ4 C13 650 20 231 0.185 0.205 60 10
PrestoMOSTM Packages indicate JEDEC notation. ( ) refer to ROHM package type. [ ] refer to JEITA code.〔 〕refer to GENERAL code.
* Packing code : C7 G(The tube package) is possible, too  ☆：Under Development

19 Power Device 20
 High Withstand Voltage Discretes

Super Junction Achieves low noise Features

Low Noise type
and low ON ● Superior A・Ron characteristics (40% lower than conventional products) Product No. RDS(on)(Ω) Qg Typ.
MOSFETs Polarity VDSS ID PD(W) (nC)
Drive
● Select from among 3 different series based on application needs Taping (TC= VGS=15V Voltage Package
resistance Part No. Code
(ch) (V) (A)
25°C) Typ. Max.
VGS=
15V
(V)
( low noise, fast switching, fast reverse recovery time) R6011END3 TL1 600 11 124 0.340 0.390 32 10
● Broad package lineup, from TO-247 to TO-252 R6009END3 TL1 600 9 94 0.500 0.535 23 10
● Exceedingly low noise makes them ideal for power supply circuits requiring R6007END3 TL1 600 7 78 0.570 0.620 20 10
R6004END3 TL1 600 4 59 0.900 0.980 15 10
noise countermeasures; suitable replacements for planar types
R6002END3 TL1 600 1.7 26 2.800 3.400 6.5 10 TO-252
N
☆ R6511END3 TL1 650 11 124 0.360 0.400 32 10 〔DPAK〕
TO-252 ☆ R6509END3 TL1 650 9 94 0.530 0.585 24 10
〔DPAK〕 ■ Noise Evaluation ☆ R6507END3 TL1 650 7 78 0.605 0.665 20 10
☆ R6504END3 TL1 650 4 59 0.955 1.050 15 10
Horizontally polarized radiant noise (dB μV/m), 146W input
☆ R6502END3 TL1 650 1.7 24 3.000 3.300 6.5 10
R6024ENJ TL 600 24 245 0.150 0.165 70 10
60
R6020ENJ TL 600 20 231 0.170 0.196 60 10
TO-263S Maximum Amount
R6020ENx series(Low Noise type) R6015ENJ TL 600 15 184 0.260 0.290 40 10
（LPTS） 50
［SC-83］ R6020KNx seires(High Efficiency type) R6011ENJ TL 600 11 124 0.340 0.390 32 10
〔D2PAK〕 Competition A R6009ENJ TL 600 9 94 0.500 0.535 23 10
40 R6007ENJ TL 600 7 78 0.570 0.620 20 10 TO-263S
R6004ENJ TL 600 4 58 0.900 0.980 15 10 （LPTS）
dB μV/m

N
30 R6524ENJ TL 650 24 245 0.160 0.185 70 10 ［SC-83］
The R6xxxENx series, featuring R6520ENJ TL 650 20 231 0.185 0.205 61 10 〔D2PAK〕
20 exceedingly low noise, is recommended R6515ENJ TL 650 15 184 0.280 0.315 40 10
for power supply circuits requiring noise R6511ENJ TL 650 11 124 0.360 0.400 32 10
TO-220FM
10 countermeasures R6509ENJ TL 650 9 94 0.530 0.585 24 10
R6507ENJ TL 650 7 78 0.605 0.665 20 10

0 R6504ENJ TL 650 4 58 0.955 1.050 15 10

30 300 R6030ENX ー* 600 30 86 0.115 0.130 85 10
Frequency(MHz)
R6024ENX ー* 600 24 74 0.150 0.165 70 10
R6020ENX ー* 600 20 68 0.170 0.196 60 10
R6015ENX ー* 600 15 60 0.260 0.290 40 10
TO-3PF ■ Efficiency Evaluation R6011ENX ー* 600 11 53 0.340 0.390 32 10
Switching Loss Conduction Loss R6009ENX ー* 600 9 48 0.500 0.535 23 10
The fast-switching R6xxxKNx series are R6007ENX ー* 600 7 46 0.570 0.620 20 10

recommended for power supply circuits

1.60 1.50 R6004ENX ー* 600 4 35 0.900 0.980 15 10
N TO-220FM
R6530ENX ー* 650 30 86 0.125 0.140 90 10
demanding lower loss and greater 1.40
R6524ENX ー* 650 24 74 0.160 0.185 70 10
efficiency
1.20
1.20 R6520ENX ー* 650 20 68 0.185 0.205 61 10
TO-247
1.02 R6515ENX ー* 650 15 60 0.280 0.315 40 10
Evaluation Circuit : PFC Circuit
1.00
Critical Mode 1.14 R6511ENX ー* 650 11 53 0.360 0.400 32 10
Loss(W)

Input 100V/60Hz
Output 120W 0.80 Switching 0.82 R6509ENX ー* 650 9 48 0.530 0.585 24 10
loss reduced 0.68 R6507ENX ー* 650 7 46 0.605 0.665 20 10
0.60 40% R6504ENX ー* 650 4 35 0.955 1.050 15 10
R6035ENZ C8 600 35 102 0.095 0.102 110 10
0.40
R6030ENZ C8 600 30 86 0.115 0.130 85 10
TO-220AB
0.20 0.36 0.34 0.38 R6024ENZ C8 600 24 74 0.150 0.165 70 10
R6020ENZ C8 600 20 68 0.170 0.196 60 10
0.00
R6015ENZ C8 600 15 60 0.260 0.290 40 10
Packages indicate JEDEC notation. R6020ENx series R6020KNx series Competition N TO-3PF
IC (Low Noise) (High Efficiency) (High Efficiency) R6535ENZ C8 650 35 102 0.098 0.115 113 10
( ) refer to ROHM package type.
[ ] refer to JEITA code. R6530ENZ C8 650 30 86 0.125 0.140 90 10
〔 〕refer to GENERAL code. R6524ENZ C8 650 24 74 0.160 0.185 70 10
R6520ENZ C8 650 20 68 0.185 0.205 61 10
R6515ENZ C8 650 15 60 0.280 0.315 40 10
■ Fast Reverse Recovery Time
R6076ENZ4 C13 600 76 735 0.038 0.042 260 10
R6047ENZ4 C13 600 47 481 0.066 0.072 145 10
Improved body diode characteristics increase energy savings
☆ R6035ENZ4 C13 600 35 379 0.095 0.102 110 10
☆ R6030ENZ4 C13 600 30 305 0.115 0.130 85 10
trr
Super Junction MOSFETs(Normal trr type)
Conventional Circuit PrestoMOSTM ☆ R6024ENZ4 C13 600 24 245 0.150 0.165 70 10
☆ R6020ENZ4
IF
C13 600 20 231 0.170 0.196 60 10
N TO-247
t R6576ENZ4 C13 650 76 735 0.040 0.046 260 10
Built-in ☆ R6547ENZ4 C13 650 47 481 0.070 0.080 145 10
FRD
Fewer ☆ R6535ENZ4 C13 650 35 379 0.098 0.115 110 10
parts ☆ R6530ENZ4 C13 650 30 305 0.125 0.140 85 10
IF
lower ☆ R6524ENZ4 C13 650 24 245 0.160 0.185 70 10
t ☆ R6520ENZ4 C13 650 20 231 0.185 0.205 60 10
PrestoMOSTM Packages indicate JEDEC notation. ( ) refer to ROHM package type. [ ] refer to JEITA code.〔 〕refer to GENERAL code.
* Packing code : C7 G(The tube package) is possible, too  ☆：Under Development

19 Power Device 20
 High Withstand Voltage Discretes

Super Junction 高速スイッチングタイプ

High-speed Switching type High-speed trr type <PrestoMOSTM>
Qg Typ.
Qg Typ. Product No. PD(W) RDS(on)(Ω) Drive
Product No. RDS(on)(Ω) Polarity VDSS ID trr
MOSFETs PD(W) Drive (nC)
Polarity VDSS ID (nC) Taping (TC= VGS=15V (Typ.) Voltage Package
(TC= VGS=10V Voltage Package Part No. (ch) (V) (A) VGS=
(ns) (V)
Taping (ch) (V) (A) VGS= Code 25°C) Typ. Max. 15V
Part No. 25°C) (V)
Code Typ. Max. 10V R6009JND3 TL1 15
600 9 125 0.450 0.585 22 65
R6011KND3 TL1 600 11 124 0.340 0.390 22 10 R6007JND3 TL1 600 7 96 0.600 0.780 17.5 60 15 TO-252
N
R6009KND3 TL1 600 9 94 0.500 0.535 16.5 10 R6006JND3 TL1 600 6 86 0.720 0.936 15.5 58 15 〔DPAK〕
R6007KND3 TL1 600 7 78 0.570 0.620 15 10 R6004JND3 TL1 600 4 60 1.100 1.430 10.5 45 15
R6006KND3 TL1 600 6 70 0.720 0.830 12 10 R6020JNJ TL 600 20 252 0.200 0.260 50 85 15
TO-252
R6003KND3 TL1 N 600 3 44 1.300 1.500 8 10
〔DPAK〕 R6018JNJ TL 600 18 220 0.220 0.286 42 80 15
☆ R6511KND3 TL1 650 11 124 0.360 0.400 22 10 TO-263S
TO-252 R6012JNJ TL 600 12 160 0.300 0.390 28 70 15
☆ R6509KND3 TL1 650 9 94 0.530 0.585 16.5 10 （LPTS）
〔DPAK〕 R6009JNJ TL N 600 9 125 0.450 0.585 22 65 15
☆ R6507KND3 TL1 650 7 78 0.605 0.665 15 10 ［SC-83］
R6007JNJ TL 600 7 96 0.600 0.780 17.5 60 15
☆ R6504KND3 TL1 650 4 58 0.955 1.050 10 10 〔D2PAK〕
R6006JNJ TL 600 6 86 0.720 0.936 15.5 58 15
R6024KNJ TL 600 24 245 0.150 0.165 46 10
R6004JNJ TL 600 4 60 1.100 1.430 10.5 45 15
R6020KNJ TL 600 20 231 0.170 0.196 40 10
R6025JNX C7 G 600 25 85 0.140 0.182 57 90 15
R6015KNJ TL 600 15 184 0.260 0.290 30 10
TO-263S R6020JNX C7 G 600 20 76 0.200 0.260 45 85 15
R6011KNJ TL 600 11 124 0.340 0.390 22 10
（LPTS） R6018JNX C7 G 600 18 72 0.220 0.286 42 80 15
R6009KNJ TL 600 9 94 0.500 0.535 16.5 10
［SC-83］
R6007KNJ TL 600 7 78 0.570 0.620 15 10 TO-263S R6012JNX C7 G 600 12 60 0.300 0.390 28 70 15
〔D2PAK〕 N TO-220FM
R6004KNJ TL 600 4 58 0.900 0.980 10 10 （LPTS） R6009JNX C7 G 600 9 53 0.450 0.585 22 65 15
N
R6524KNJ TL 650 24 245 0.160 0.185 46 10 [SC-83] R6007JNX C7 G 600 7 46 0.600 0.780 17.5 60 15
R6520KNJ TL 650 20 231 0.185 0.205 40 10 〔D2PAK〕 R6006JNX C7 G 600 6 43 0.720 0.936 15.5 58 15
R6515KNJ TL 650 15 184 0.280 0.315 30 10 R6004JNX C7 G 600 4 35 1.100 1.430 10.5 45 15
R6511KNJ TL 650 11 124 0.360 0.400 22 10 ☆ R6050JNZ C8 600 50 120 0.064 0.083 120 120 15
R6509KNJ TL 650 9 94 0.530 0.585 16.5 10 R6030JNZ C8 600 30 93 0.110 0.143 75 100 15
N TO-3PF
TO-220FM R6507KNJ TL 650 7 78 0.605 0.665 15 10 R6025JNZ C8 600 25 85 0.140 0.182 65 90 15
R6504KNJ TL 650 4 58 0.955 1.050 10 10 R6020JNZ C8 600 20 76 0.180 0.234 50 85 15
R6030KNX ー* 600 30 86 0.115 0.130 56 10 ☆ R6070JNZ4 C13 600 70 770 0.045 0.058 160 135 15
R6024KNX ー* 600 24 74 0.150 0.165 46 10
☆ R6050JNZ4 C13 N 600 50 615 0.064 0.083 120 120 15
R6020KNX ー* 600 20 68 0.170 0.196 40 10
☆ R6042JNZ4 C13 600 42 495 0.080 0.104 100 110 15
R6015KNX ー* 600 15 60 0.260 0.290 30 10 TO-247
☆ R6030JNZ4 C13 600 30 370 0.110 0.143 74 100 15
R6011KNX ー* 600 11 53 0.340 0.390 22 10
☆ R6025JNZ4 C13 N 600 25 306 0.150 0.195 65 90 15
R6009KNX ー* 600 9 48 0.500 0.535 16.5 10
☆ R6020JNZ4 C13 600 20 252 0.180 0.234 45 85 15
TO-3PF R6007KNX ー* 600 7 46 0.570 0.620 15 10
Packages indicate JEDEC notation. ( ) refer to ROHM package type. [ ] refer to JEITA code.〔 〕refer to GENERAL code.
R6006KNX ー* 600 6 40 0.720 0.830 12 10
☆：Under Development
R6004KNX ー* N 600 4 35 0.900 0.980 10 10 TO-220FM
R6530KNX ー* 650 30 86 0.125 0.140 56 10
R6524KNX ー* 650 24 74 0.160 0.185 46 10
R6520KNX ー* 650 20 68 0.185 0.205 40 10
R6515KNX ー* 650 15 60 0.280 0.315 30 10

TO-247
R6511KNX ー* 650 11 53 0.360 0.400 22 10
R6509KNX ー* 650 9 48 0.530 0.585 16.5 10
R6507KNX ー* 650 7 46 0.605 0.665 15 10
R6504KNX ー* 650 4 35 0.955 1.050 10 10
R6035KNZ C8 600 35 102 0.095 0.102 72 10
R6030KNZ C8 600 30 86 0.115 0.130 56 10
R6024KNZ C8 600 24 74 0.150 0.165 46 10
TO-220AB R6020KNZ C8 600 20 68 0.170 0.196 40 10
R6015KNZ C8 600 15 60 0.260 0.290 30 10
N TO-3PF
R6535KNZ C8 650 35 102 0.098 0.115 72 10
Packages indicate JEDEC notation. R6530KNZ C8 650 30 86 0.125 0.140 56 10
( ) refer to ROHM package type. R6524KNZ C8 650 24 74 0.160 0.185 46 10
[ ] refer to JEITA code.
R6520KNZ C8 650 20 68 0.185 0.205 40 10
〔 〕refer to GENERAL code.
R6515KNZ C8 650 15 60 0.280 0.315 30 10
R6076KNZ4 C13 600 76 735 0.040 0.042 165 10
R6047KNZ4 C13 600 47 481 0.070 0.072 100 10
☆ R6035KNZ4 C13 600 35 379 0.095 0.102 72 10
☆ R6030KNZ4 C13 600 30 305 0.115 0.130 56 10
☆ R6024KNZ4 C13 600 24 245 0.150 0.165 46 10
☆ R6020KNZ4 C13 600 20 231 0.170 0.196 40 10
N TO-247
☆ R6576KNZ4 C13 650 76 735 0.040 0.046 165 10
R6547KNZ4 C13 650 47 481 0.070 0.080 100 10
☆ R6535KNZ4 C13 650 35 379 0.098 0.115 72 10
☆ R6530KNZ4 C13 650 30 305 0.125 0.140 56 10
☆ R6524KNZ4 C13 650 24 245 0.160 0.185 45 10
R6520KNZ4 C13 650 20 231 0.185 0.205 40 10
R6535KNX1 C10 650 35 102 0.098 0.115 72 10
R6530KNX1 C10 650 30 86 0.125 0.140 56 10
R6524KNX1 C10 N 650 24 74 0.160 0.185 45 10 TO-220AB
R6520KNX1 C10 650 20 68 0.185 0.205 40 10
R6515KNX1 C10 650 15 60 0.280 0.315 27.5 10
Packages indicate JEDEC notation. ( ) refer to ROHM package type. [ ] refer to JEITA code.〔 〕refer to GENERAL code.
21 * Packing code : C7 G(The tube package) is possible, too  ☆：Under Development Power Device 22
 High Withstand Voltage Discretes

Super Junction 高速スイッチングタイプ

High-speed Switching type High-speed trr type <PrestoMOSTM>
Qg Typ.
Qg Typ. Product No. PD(W) RDS(on)(Ω) Drive
Product No. RDS(on)(Ω) Polarity VDSS ID trr
MOSFETs PD(W) Drive (nC)
Polarity VDSS ID (nC) Taping (TC= VGS=15V (Typ.) Voltage Package
(TC= VGS=10V Voltage Package Part No. (ch) (V) (A) VGS=
(ns) (V)
Taping (ch) (V) (A) VGS= Code 25°C) Typ. Max. 15V
Part No. 25°C) (V)
Code Typ. Max. 10V R6009JND3 TL1 15
600 9 125 0.450 0.585 22 65
R6011KND3 TL1 600 11 124 0.340 0.390 22 10 R6007JND3 TL1 600 7 96 0.600 0.780 17.5 60 15 TO-252
N
R6009KND3 TL1 600 9 94 0.500 0.535 16.5 10 R6006JND3 TL1 600 6 86 0.720 0.936 15.5 58 15 〔DPAK〕
R6007KND3 TL1 600 7 78 0.570 0.620 15 10 R6004JND3 TL1 600 4 60 1.100 1.430 10.5 45 15
R6006KND3 TL1 600 6 70 0.720 0.830 12 10 R6020JNJ TL 600 20 252 0.200 0.260 50 85 15
TO-252
R6003KND3 TL1 N 600 3 44 1.300 1.500 8 10
〔DPAK〕 R6018JNJ TL 600 18 220 0.220 0.286 42 80 15
☆ R6511KND3 TL1 650 11 124 0.360 0.400 22 10 TO-263S
TO-252 R6012JNJ TL 600 12 160 0.300 0.390 28 70 15
☆ R6509KND3 TL1 650 9 94 0.530 0.585 16.5 10 （LPTS）
〔DPAK〕 R6009JNJ TL N 600 9 125 0.450 0.585 22 65 15
☆ R6507KND3 TL1 650 7 78 0.605 0.665 15 10 ［SC-83］
R6007JNJ TL 600 7 96 0.600 0.780 17.5 60 15
☆ R6504KND3 TL1 650 4 58 0.955 1.050 10 10 〔D2PAK〕
R6006JNJ TL 600 6 86 0.720 0.936 15.5 58 15
R6024KNJ TL 600 24 245 0.150 0.165 46 10
R6004JNJ TL 600 4 60 1.100 1.430 10.5 45 15
R6020KNJ TL 600 20 231 0.170 0.196 40 10
R6025JNX C7 G 600 25 85 0.140 0.182 57 90 15
R6015KNJ TL 600 15 184 0.260 0.290 30 10
TO-263S R6020JNX C7 G 600 20 76 0.200 0.260 45 85 15
R6011KNJ TL 600 11 124 0.340 0.390 22 10
（LPTS） R6018JNX C7 G 600 18 72 0.220 0.286 42 80 15
R6009KNJ TL 600 9 94 0.500 0.535 16.5 10
［SC-83］
R6007KNJ TL 600 7 78 0.570 0.620 15 10 TO-263S R6012JNX C7 G 600 12 60 0.300 0.390 28 70 15
〔D2PAK〕 N TO-220FM
R6004KNJ TL 600 4 58 0.900 0.980 10 10 （LPTS） R6009JNX C7 G 600 9 53 0.450 0.585 22 65 15
N
R6524KNJ TL 650 24 245 0.160 0.185 46 10 [SC-83] R6007JNX C7 G 600 7 46 0.600 0.780 17.5 60 15
R6520KNJ TL 650 20 231 0.185 0.205 40 10 〔D2PAK〕 R6006JNX C7 G 600 6 43 0.720 0.936 15.5 58 15
R6515KNJ TL 650 15 184 0.280 0.315 30 10 R6004JNX C7 G 600 4 35 1.100 1.430 10.5 45 15
R6511KNJ TL 650 11 124 0.360 0.400 22 10 ☆ R6050JNZ C8 600 50 120 0.064 0.083 120 120 15
R6509KNJ TL 650 9 94 0.530 0.585 16.5 10 R6030JNZ C8 600 30 93 0.110 0.143 75 100 15
N TO-3PF
TO-220FM R6507KNJ TL 650 7 78 0.605 0.665 15 10 R6025JNZ C8 600 25 85 0.140 0.182 65 90 15
R6504KNJ TL 650 4 58 0.955 1.050 10 10 R6020JNZ C8 600 20 76 0.180 0.234 50 85 15
R6030KNX ー* 600 30 86 0.115 0.130 56 10 ☆ R6070JNZ4 C13 600 70 770 0.045 0.058 160 135 15
R6024KNX ー* 600 24 74 0.150 0.165 46 10
☆ R6050JNZ4 C13 N 600 50 615 0.064 0.083 120 120 15
R6020KNX ー* 600 20 68 0.170 0.196 40 10
☆ R6042JNZ4 C13 600 42 495 0.080 0.104 100 110 15
R6015KNX ー* 600 15 60 0.260 0.290 30 10 TO-247
☆ R6030JNZ4 C13 600 30 370 0.110 0.143 74 100 15
R6011KNX ー* 600 11 53 0.340 0.390 22 10
☆ R6025JNZ4 C13 N 600 25 306 0.150 0.195 65 90 15
R6009KNX ー* 600 9 48 0.500 0.535 16.5 10
☆ R6020JNZ4 C13 600 20 252 0.180 0.234 45 85 15
TO-3PF R6007KNX ー* 600 7 46 0.570 0.620 15 10
Packages indicate JEDEC notation. ( ) refer to ROHM package type. [ ] refer to JEITA code.〔 〕refer to GENERAL code.
R6006KNX ー* 600 6 40 0.720 0.830 12 10
☆：Under Development
R6004KNX ー* N 600 4 35 0.900 0.980 10 10 TO-220FM
R6530KNX ー* 650 30 86 0.125 0.140 56 10
R6524KNX ー* 650 24 74 0.160 0.185 46 10
R6520KNX ー* 650 20 68 0.185 0.205 40 10
R6515KNX ー* 650 15 60 0.280 0.315 30 10

TO-247
R6511KNX ー* 650 11 53 0.360 0.400 22 10
R6509KNX ー* 650 9 48 0.530 0.585 16.5 10
R6507KNX ー* 650 7 46 0.605 0.665 15 10
R6504KNX ー* 650 4 35 0.955 1.050 10 10
R6035KNZ C8 600 35 102 0.095 0.102 72 10
R6030KNZ C8 600 30 86 0.115 0.130 56 10
R6024KNZ C8 600 24 74 0.150 0.165 46 10
TO-220AB R6020KNZ C8 600 20 68 0.170 0.196 40 10
R6015KNZ C8 600 15 60 0.260 0.290 30 10
N TO-3PF
R6535KNZ C8 650 35 102 0.098 0.115 72 10
Packages indicate JEDEC notation. R6530KNZ C8 650 30 86 0.125 0.140 56 10
( ) refer to ROHM package type. R6524KNZ C8 650 24 74 0.160 0.185 46 10
[ ] refer to JEITA code.
R6520KNZ C8 650 20 68 0.185 0.205 40 10
〔 〕refer to GENERAL code.
R6515KNZ C8 650 15 60 0.280 0.315 30 10
R6076KNZ4 C13 600 76 735 0.040 0.042 165 10
R6047KNZ4 C13 600 47 481 0.070 0.072 100 10
☆ R6035KNZ4 C13 600 35 379 0.095 0.102 72 10
☆ R6030KNZ4 C13 600 30 305 0.115 0.130 56 10
☆ R6024KNZ4 C13 600 24 245 0.150 0.165 46 10
☆ R6020KNZ4 C13 600 20 231 0.170 0.196 40 10
N TO-247
☆ R6576KNZ4 C13 650 76 735 0.040 0.046 165 10
R6547KNZ4 C13 650 47 481 0.070 0.080 100 10
☆ R6535KNZ4 C13 650 35 379 0.098 0.115 72 10
☆ R6530KNZ4 C13 650 30 305 0.125 0.140 56 10
☆ R6524KNZ4 C13 650 24 245 0.160 0.185 45 10
R6520KNZ4 C13 650 20 231 0.185 0.205 40 10
R6535KNX1 C10 650 35 102 0.098 0.115 72 10
R6530KNX1 C10 650 30 86 0.125 0.140 56 10
R6524KNX1 C10 N 650 24 74 0.160 0.185 45 10 TO-220AB
R6520KNX1 C10 650 20 68 0.185 0.205 40 10
R6515KNX1 C10 650 15 60 0.280 0.315 27.5 10
Packages indicate JEDEC notation. ( ) refer to ROHM package type. [ ] refer to JEITA code.〔 〕refer to GENERAL code.
21 * Packing code : C7 G(The tube package) is possible, too  ☆：Under Development Power Device 22
 Resistors for Current Detection

Resistors for
Current Detection Quick Resistance Range Reference
(Extract 1W or more) ( Part No./mm[inch] )
Power
Rating
(W)
Resistance(Ω)
0.1m 1m
PSR GMR PML PMR

10m
Metal Strip

100m
UCR LHR LTR MCR Thick Film

1 10
5 0.1m PSR500 / 15×7.75[5931] 2m 5m ☆GMR320 / 7142[2817] 100m

4 0.2m PSR400 / 10×5.2[3921] 3m

Ideal for current detection 3 0.3m PSR100 / 6.35×3.05[2512] 3m 5m GMR100 / 6432[2512] 220m

0.5m PML100 / 3264[1225] 2.2m 5m ☆GMR50 / 5025[2010] 200m

in large-current applications 2
1m PMR100 / 6432[2512] / 10m 100m LTR100 / 3264[1225] 910m
0.5m 2.2m PML50 / 2550[1020]

10m ☆LTR50 / 2550[1020]P.D14 910m

1.25 33m LHR18 / 1632[0612]P.D14 1

1m PMR50 / 5025[2010] 10m

PMR25 / 3225[1210] 1m 5m
1
1m PMR18 / 3216[1206] 10m 10m LTR18 / 1632[0612] 1

0.5m 2.5m PML18 / 1632[0612]

☆ : Under Development

Shunt Resistors This series features high rated power and ultra-low resistances ideal for current detection in high power sets. Metal Plate Ultra-Low-Ohmic/High Power type(PSR series)
Adopting a high performance alloy material as the resistive element ensures superior temperature coefficient Size Code Rated Power Tolerance Temperature* Resistance Operating Automotive Grade
Part No. mm(inch) (70°C) Coefficient(ppm/°C) Range(mΩ) Temperature(°C) AEC-Q200
of resistance (TCR), even in the ultra-low-ohmic region. ±150 0.3
6432 ±115 0.5
■ Metal Plate Ultra-Low-Ohmic/High Power type(PSR series) PSR100 3W （±1％）
F YES
PSR series （2512） ±100 1.0
±50 2.0, 3.0
● High power (3W to 5W class)  ● Ultra-low resistances from 0.2mΩ    125±50 ☆0.2
   ● Special alloy used for low TCR
10×5.2
● Convex structure    PSR400 4W （±1％）
F ±175 0.3, 0.5 −55 to ＋170 YES
（3921）
±75 1.0, 2.0, 3.0

Temperature Coefficient of
Precision welding Resistive Alloy Superior temperature ＋20ºC to ＋125ºC 200±50 ☆0.1
(Ni-Cr/Cu-Mn-based 250
technology and high-performance alloy)
coefficient of resistance 200 Ave. 15×7.75
（±1％）
±225 0.2

Resistance(ppm/°C)
150 PSR500 5W F YES
high-performance ensured even in the 100 Max. （5931） ±150 0.3, 0.4, 0.5
PSR100 PSR400 PSR500 50 Min.
alloy reduces ultra-low-ohmic region 0 ±75 1.0, 2.0
power consumption
–50
–100
*(＋20°C to ＋125°C) ☆ : Under Development
–150
–200
Electrode(Cu) Precision Electrode(Cu) –250 Metal Plate Low Ohmic/High Power type(GMR series)
Welds
GMR series PSR500 PSR400 PSR500 PSR400 Part No. Size Code Rated Power Tolerance Temperature*1
Resistance Range(mΩ)
Operating Automotive Grade
mm(inch) (70°C) Coefficient(ppm/°C) Temperature(°C) AEC-Q200
5025 0 to ＋50 5mΩ
☆ GMR50 2W （±1%）
F Preparing
（2010）
■ Metal Plate Low Ohmic/High Power type(GMR series) ±25 10mΩ to 200mΩ(E6 series*2*3)
6432 0 to ＋50 ☆5mΩ
GMR100 3W （±1%）
F −55 to ＋170 YES
（2512） ±20 10mΩ to 220mΩ(E6 series*2)
● High power : 5W Max.   ● Low TCR using a special metal alloy   
7142 0 to ＋100 5mΩ
☆ GMR320 5W （±1%）
F Preparing
● Original construction enables high heat dissipation and excellent temperature cycling characteristics （2817） ±25 10mΩ to 100mΩ(E6 series*2*3)
☆ : Under Development (The development schedule may vary depending on resistance value. Please Contacts us.)
Surface Competitor Products/10mΩ GMR100/10mΩ *1 (＋20°C to ＋60°C)
☆GMR50 GMR100 ☆GMR320 *2 Please contact us for resistance values outside the nominal range.
Temperature *3 The development schedule may vary depending on resistance value.
☆: Under Development Comparison
Metal Plate Ultra-Low-Ohmic type(PMR series)
PMR series Size Code Rated Power Temperature Resistance Range Operating Automotive Grade
Part No. mm(inch) (70°C) Tolerance Coefficient(ppm/°C) (mΩ) Temperature(°C) AEC-Q200
+ 140 °C + 107 °C PMR18 3216(1206) 1W （ （±1％）
J ±5％）F ±100
1, 2, 3, 4, 5,
YES
6, 7, 8, 9, 10
PMR25 3225(1210) 1W （ （±1％）
J ±5％）F ±100 1, 2, 3, 4, 5 YES
■ Metal Plate Ultra-Low-Ohmic type(PMR series) 1, 2, 3, 4, 5, −55 to ＋155
PMR18 PMR25 PMR50 5025(2010) 1W （ （±1％）
J ±5％）F ±100
6, 7, 8, 9, 10 YES
● High power (2W class)   ● Original trimless structure   ● Multiple package types ±150 1, 2
2W （ （±1％）
J ±5％）F
PMR100 6432(2512) ±100 3, 4, 5, 6, 7, 8, 9, 10 YES
Trimless Structure Improves Current Detection Accuracy ☆3W （ （±1％）
J ±5％）F ±150 1, 2
☆ : Under Development
Conventional Structure (With Laser Trimming) PMR series (Trimless Structure)
PMR50 PMR100 Voltage Thick Film Low-Ohmic/Wide Terminal type(LTR/LHR series)
dl Voltage
L Size Code Rated Power Temperature Operating Automotive Grade
dt Part No. (70°C) Tolerance Coefficient(ppm/°C) Resistance Range
Larger inductance Small inductance mm(inch) Temperature(°C) AEC-Q200
（
J ±5%) 0 to 125 33mΩ to 39mΩ(E24 series)
makes current component reduces 1632
LTR series LHR18 (0612) 1.25W 0 to 100 43mΩ to 270mΩ(E24 series) YES
detection detection error, （±1%)
F 0 to 75 300mΩ to 1Ω(E24 series)
Current Current
more difficult improving accuracy 0 to 300 10mΩ to 18mΩ(E24 series)
（
J ±5%)
1632 0 to 200 20mΩ to 47mΩ(E24 series)
LTR18 1W YES
(0612) 0 to 150 51mΩ to 470mΩ(E24 series)
（±1%)
F
■ Thick Film Low-Ohmic/Wide Terminal type(LTR/LHR series) ±100 510mΩ to 1Ω(E24 series)
LTR18 LTR50 Thick Film Low-Ohmic / Wide Terminal Type (LTR Series) 0 to 300 10mΩ to 18mΩ(E24 series)
（
J ±5%) −55 to ＋155
Superior Heat Dissipation Characteristics Reduced Temperature Coefficient of Resistance LTR50 2550 2W
0 to 200 20mΩ to 47mΩ(E24 series)
YES
(1020) 0 to 150 51mΩ to 91mΩ(E24 series)
800
*Compare it under conditions of 47mΩ （±1%)
F
MCR50 LTR50 ±100 100mΩ to 910mΩ(E24 series)
(5025 size Standard Product) (2550 size) 750 （
J ±5%) ±200
TCR≦100ppm/°C 2W 100mΩ to 910mΩ(E24 series)
Short Terminal type Wide Terminal type （±1%)
TCR（ppm/°C）

F 0 to 150
achieved！ 3264
LTR100 (1225) （
J ±5%) 0 to 300 10mΩ to 18mΩ(E24 series) YES
LTR100 LHR18 ☆3W 0 to 200 20mΩ to 47mΩ(E24 series)
Surface temperature 100 （±1%)
F 0 to 150 51mΩ to 91mΩ(E24 series)
rise reduced by 23%
50 ☆ : Under Development
0 −55°C +125°C −55°C +125°C −55°C +125°C
112.7°C at 2W 92.2°C at 2W MCR18 LTR18 LHR18 Power Device 24
23
 Resistors for Current Detection

Resistors for
Current Detection Quick Resistance Range Reference
(Extract 1W or more) ( Part No./mm[inch] )
Power
Rating
(W)
Resistance(Ω)
0.1m 1m
PSR GMR PML PMR

10m
Metal Strip

100m
UCR LHR LTR MCR Thick Film

1 10
5 0.1m PSR500 / 15×7.75[5931] 2m 5m ☆GMR320 / 7142[2817] 100m

4 0.2m PSR400 / 10×5.2[3921] 3m

Ideal for current detection 3 0.3m PSR100 / 6.35×3.05[2512] 3m 5m GMR100 / 6432[2512] 220m

0.5m PML100 / 3264[1225] 2.2m 5m ☆GMR50 / 5025[2010] 200m

in large-current applications 2
1m PMR100 / 6432[2512] / 10m 100m LTR100 / 3264[1225] 910m
0.5m 2.2m PML50 / 2550[1020]

10m ☆LTR50 / 2550[1020]P.D14 910m

1.25 33m LHR18 / 1632[0612]P.D14 1

1m PMR50 / 5025[2010] 10m

PMR25 / 3225[1210] 1m 5m
1
1m PMR18 / 3216[1206] 10m 10m LTR18 / 1632[0612] 1

0.5m 2.5m PML18 / 1632[0612]

☆ : Under Development

Shunt Resistors This series features high rated power and ultra-low resistances ideal for current detection in high power sets. Metal Plate Ultra-Low-Ohmic/High Power type(PSR series)
Adopting a high performance alloy material as the resistive element ensures superior temperature coefficient Size Code Rated Power Tolerance Temperature* Resistance Operating Automotive Grade
Part No. mm(inch) (70°C) Coefficient(ppm/°C) Range(mΩ) Temperature(°C) AEC-Q200
of resistance (TCR), even in the ultra-low-ohmic region. ±150 0.3
6432 ±115 0.5
■ Metal Plate Ultra-Low-Ohmic/High Power type(PSR series) PSR100 3W （±1％）
F YES
PSR series （2512） ±100 1.0
±50 2.0, 3.0
● High power (3W to 5W class)  ● Ultra-low resistances from 0.2mΩ    125±50 ☆0.2
   ● Special alloy used for low TCR
10×5.2
● Convex structure    PSR400 4W （±1％）
F ±175 0.3, 0.5 −55 to ＋170 YES
（3921）
±75 1.0, 2.0, 3.0

Temperature Coefficient of
Precision welding Resistive Alloy Superior temperature ＋20ºC to ＋125ºC 200±50 ☆0.1
(Ni-Cr/Cu-Mn-based 250
technology and high-performance alloy)
coefficient of resistance 200 Ave. 15×7.75
（±1％）
±225 0.2

Resistance(ppm/°C)
150 PSR500 5W F YES
high-performance ensured even in the 100 Max. （5931） ±150 0.3, 0.4, 0.5
PSR100 PSR400 PSR500 50 Min.
alloy reduces ultra-low-ohmic region 0 ±75 1.0, 2.0
power consumption
–50
–100
*(＋20°C to ＋125°C) ☆ : Under Development
–150
–200
Electrode(Cu) Precision Electrode(Cu) –250 Metal Plate Low Ohmic/High Power type(GMR series)
Welds
GMR series PSR500 PSR400 PSR500 PSR400 Part No. Size Code Rated Power Tolerance Temperature*1
Resistance Range(mΩ)
Operating Automotive Grade
mm(inch) (70°C) Coefficient(ppm/°C) Temperature(°C) AEC-Q200
5025 0 to ＋50 5mΩ
☆ GMR50 2W （±1%）
F Preparing
（2010）
■ Metal Plate Low Ohmic/High Power type(GMR series) ±25 10mΩ to 200mΩ(E6 series*2*3)
6432 0 to ＋50 ☆5mΩ
GMR100 3W （±1%）
F −55 to ＋170 YES
（2512） ±20 10mΩ to 220mΩ(E6 series*2)
● High power : 5W Max.   ● Low TCR using a special metal alloy   
7142 0 to ＋100 5mΩ
☆ GMR320 5W （±1%）
F Preparing
● Original construction enables high heat dissipation and excellent temperature cycling characteristics （2817） ±25 10mΩ to 100mΩ(E6 series*2*3)
☆ : Under Development (The development schedule may vary depending on resistance value. Please Contacts us.)
Surface Competitor Products/10mΩ GMR100/10mΩ *1 (＋20°C to ＋60°C)
☆GMR50 GMR100 ☆GMR320 *2 Please contact us for resistance values outside the nominal range.
Temperature *3 The development schedule may vary depending on resistance value.
☆: Under Development Comparison
Metal Plate Ultra-Low-Ohmic type(PMR series)
PMR series Size Code Rated Power Temperature Resistance Range Operating Automotive Grade
Part No. mm(inch) (70°C) Tolerance Coefficient(ppm/°C) (mΩ) Temperature(°C) AEC-Q200
+ 140 °C + 107 °C PMR18 3216(1206) 1W （ （±1％）
J ±5％）F ±100
1, 2, 3, 4, 5,
YES
6, 7, 8, 9, 10
PMR25 3225(1210) 1W （ （±1％）
J ±5％）F ±100 1, 2, 3, 4, 5 YES
■ Metal Plate Ultra-Low-Ohmic type(PMR series) 1, 2, 3, 4, 5, −55 to ＋155
PMR18 PMR25 PMR50 5025(2010) 1W （ （±1％）
J ±5％）F ±100
6, 7, 8, 9, 10 YES
● High power (2W class)   ● Original trimless structure   ● Multiple package types ±150 1, 2
2W （ （±1％）
J ±5％）F
PMR100 6432(2512) ±100 3, 4, 5, 6, 7, 8, 9, 10 YES
Trimless Structure Improves Current Detection Accuracy ☆3W （ （±1％）
J ±5％）F ±150 1, 2
☆ : Under Development
Conventional Structure (With Laser Trimming) PMR series (Trimless Structure)
PMR50 PMR100 Voltage Thick Film Low-Ohmic/Wide Terminal type(LTR/LHR series)
dl Voltage
L Size Code Rated Power Temperature Operating Automotive Grade
dt Part No. (70°C) Tolerance Coefficient(ppm/°C) Resistance Range
Larger inductance Small inductance mm(inch) Temperature(°C) AEC-Q200
（
J ±5%) 0 to 125 33mΩ to 39mΩ(E24 series)
makes current component reduces 1632
LTR series LHR18 (0612) 1.25W 0 to 100 43mΩ to 270mΩ(E24 series) YES
detection detection error, （±1%)
F 0 to 75 300mΩ to 1Ω(E24 series)
Current Current
more difficult improving accuracy 0 to 300 10mΩ to 18mΩ(E24 series)
（
J ±5%)
1632 0 to 200 20mΩ to 47mΩ(E24 series)
LTR18 1W YES
(0612) 0 to 150 51mΩ to 470mΩ(E24 series)
（±1%)
F
■ Thick Film Low-Ohmic/Wide Terminal type(LTR/LHR series) ±100 510mΩ to 1Ω(E24 series)
LTR18 LTR50 Thick Film Low-Ohmic / Wide Terminal Type (LTR Series) 0 to 300 10mΩ to 18mΩ(E24 series)
（
J ±5%) −55 to ＋155
Superior Heat Dissipation Characteristics Reduced Temperature Coefficient of Resistance LTR50 2550 2W
0 to 200 20mΩ to 47mΩ(E24 series)
YES
(1020) 0 to 150 51mΩ to 91mΩ(E24 series)
800
*Compare it under conditions of 47mΩ （±1%)
F
MCR50 LTR50 ±100 100mΩ to 910mΩ(E24 series)
(5025 size Standard Product) (2550 size) 750 （
J ±5%) ±200
TCR≦100ppm/°C 2W 100mΩ to 910mΩ(E24 series)
Short Terminal type Wide Terminal type （±1%)
TCR（ppm/°C）

F 0 to 150
achieved！ 3264
LTR100 (1225) （
J ±5%) 0 to 300 10mΩ to 18mΩ(E24 series) YES
LTR100 LHR18 ☆3W 0 to 200 20mΩ to 47mΩ(E24 series)
Surface temperature 100 （±1%)
F 0 to 150 51mΩ to 91mΩ(E24 series)
rise reduced by 23%
50 ☆ : Under Development
0 −55°C +125°C −55°C +125°C −55°C +125°C
112.7°C at 2W 92.2°C at 2W MCR18 LTR18 LHR18 Power Device 24
23
 A vertically integrated production system Nuremberg

ensures high quality and stable supply SiCrystal AG, the largest SiC monocrystal wafer manufacturer in Europe,
became a member of the ROHM Group in 2009.
SiCrystal was established in 1997 in Germany based on a SiC
A ‘Quality First’ objective allows ROHM to establish a vertically integrated manufacturing system monocrystal growth technology development project launched in 1994.
for SiC production. In addition to acquiring SiCrystal, a German wafer fabrication company in Mass production and supply of SiC wafers began in 2001.
2009, the ROHM Group continues to implement activities to improve quality throughout the In 2012, SiCrystal relocated to a new plant in Nuremberg to increase production capacity.
entire manufacturing process, from wafers to packages. World-class manufacturing With the corporate philosophy "Stable Quality", SiCrystal has adopted
technologies and stable production capacity provide increased cost competitiveness and an integrated wafer production system from raw SiC material to crystal growth,
ensures a stable, long-term supply of new products. wafer processing, and inspection, and in 1999 was granted ISO 9001 certification.
State-of-the-art package

■ Manufactured Product : SiC Wafers

ROHM provides the latest assembling
technologies such as CSP, BGA, COF
and stacked package

In-house manufactured dies and lead frames

To enhance quality,
ROHM manufactures 150mm
dies to punch lead 100mm （6inch）
frames and molding 3inch （4inch）
2inch
dies within the company

Acquired ISO 9001 Certication

■ SiC Wafer Process Flow

Stringent material requirements
State-of-the-art Crystal Growth Technology
Complete wafer
SiC boules are produced through a crystal growth process utilizing a modified Rayleigh method that sublimates SiC powder at high
production, from temperatures and crystallizes it into a low-temperature seed crystal.
silicon ingot pulling Whereas conventional silicon ingots are liquid phase growth crystals created from melt, the sublimation method involves a slower growth rate
Packaging
Silicon ore which may result in crystal defects, so delicate technology is required for crystal control.
Assembly Line
At SiCrystal, advanced crystal technology is achieved by leveraging numerical analysis.

Thermal Water-Cooled
Insulation Quartz-Tubes
Frame & Dies
Low inductance modules A
For SiC For Si
Photo Mask Seed
CAD
Temperature range : 2,000 to 2,500°C Temperature : 1,415 to 1,450°C
A low inductance modules utilizing SiC’s
high-speed characteristics was developed
Principle : Sublimation growth by evaporation Principle : Liquid phase growth by
Silicon Ingot
of SiC powder and subsequent solidification of the melt on the
SiC-
Wafer Process
Source atomic layer growth on the seed seed crystal. The method has a
crystal. Process control is more comparatively high growth rate.
complex and growth rate is slower
In-house production equipment Water-Cooled
than liquid phase growth.
Silicon High quality, high volume, and stable Induction-Coil
Crucible
Si Wafer manufacturing are guaranteed utilizing
in-house production equipment

Silicon
carbide

SiC In-house manufactured photomask

Pursuing high quality through SiC processes
consistent quality control from IC
chip design layout to photo mask
High quality lines integrating SiC’s 1. As-grown Crystal 2. Diameter Grinding 3. Flat Grinding 4. Wire-Sawing 5. Edge Grinding/
Polishing/
SiC Wafer
unique processes are utilized
production Cleaning

SiCrystal is a German SiC single

crystal wafer manufacturer who joined
the ROHM Group in 2009.

All production equipment are developed in-house

25 Power Device 26
 A vertically integrated production system Nuremberg

ensures high quality and stable supply SiCrystal AG, the largest SiC monocrystal wafer manufacturer in Europe,
became a member of the ROHM Group in 2009.
SiCrystal was established in 1997 in Germany based on a SiC
A ‘Quality First’ objective allows ROHM to establish a vertically integrated manufacturing system monocrystal growth technology development project launched in 1994.
for SiC production. In addition to acquiring SiCrystal, a German wafer fabrication company in Mass production and supply of SiC wafers began in 2001.
2009, the ROHM Group continues to implement activities to improve quality throughout the In 2012, SiCrystal relocated to a new plant in Nuremberg to increase production capacity.
entire manufacturing process, from wafers to packages. World-class manufacturing With the corporate philosophy "Stable Quality", SiCrystal has adopted
technologies and stable production capacity provide increased cost competitiveness and an integrated wafer production system from raw SiC material to crystal growth,
ensures a stable, long-term supply of new products. wafer processing, and inspection, and in 1999 was granted ISO 9001 certification.
State-of-the-art package

■ Manufactured Product : SiC Wafers

ROHM provides the latest assembling
technologies such as CSP, BGA, COF
and stacked package

In-house manufactured dies and lead frames

To enhance quality,
ROHM manufactures 150mm
dies to punch lead 100mm （6inch）
frames and molding 3inch （4inch）
2inch
dies within the company

Acquired ISO 9001 Certication

■ SiC Wafer Process Flow

Stringent material requirements
State-of-the-art Crystal Growth Technology
Complete wafer
SiC boules are produced through a crystal growth process utilizing a modified Rayleigh method that sublimates SiC powder at high
production, from temperatures and crystallizes it into a low-temperature seed crystal.
silicon ingot pulling Whereas conventional silicon ingots are liquid phase growth crystals created from melt, the sublimation method involves a slower growth rate
Packaging
Silicon ore which may result in crystal defects, so delicate technology is required for crystal control.
Assembly Line
At SiCrystal, advanced crystal technology is achieved by leveraging numerical analysis.

Thermal Water-Cooled
Insulation Quartz-Tubes
Frame & Dies
Low inductance modules A
For SiC For Si
Photo Mask Seed
CAD
Temperature range : 2,000 to 2,500°C Temperature : 1,415 to 1,450°C
A low inductance modules utilizing SiC’s
high-speed characteristics was developed
Principle : Sublimation growth by evaporation Principle : Liquid phase growth by
Silicon Ingot
of SiC powder and subsequent solidification of the melt on the
SiC-
Wafer Process
Source atomic layer growth on the seed seed crystal. The method has a
crystal. Process control is more comparatively high growth rate.
complex and growth rate is slower
In-house production equipment Water-Cooled
than liquid phase growth.
Silicon High quality, high volume, and stable Induction-Coil
Crucible
Si Wafer manufacturing are guaranteed utilizing
in-house production equipment

Silicon
carbide

SiC In-house manufactured photomask

Pursuing high quality through SiC processes
consistent quality control from IC
chip design layout to photo mask
High quality lines integrating SiC’s 1. As-grown Crystal 2. Diameter Grinding 3. Flat Grinding 4. Wire-Sawing 5. Edge Grinding/
Polishing/
SiC Wafer
unique processes are utilized
production Cleaning

SiCrystal is a German SiC single

crystal wafer manufacturer who joined
the ROHM Group in 2009.

All production equipment are developed in-house

25 Power Device 26
 ROHM has been focused on developing SiC for use as a material for next-generation power

Focusing on cutting-edge SiC technology and devices for years, collaborating with universities and end-users in order to cultivate technological
know-how and expertise. This culminated in Japan's first mass-produced Schottky barrier diodes

leading the industry through innovative R&D in April 2010 and the industry’s first commercially available SiC transistors (MOSFET) in December.
And in March 2012 ROHM unveiled the industry's first mass production of Full SiC Power Modules.

History
Max. Temp. = 250.8ºC

80% Duty Cycle

SiC Technology
Breakthrough

20% Duty Cycle

❶ ❷

2002 2005 2007 2008 2009

Began preliminary experiments with Shipped SiC MOSFET samples ROHM, along with Kyoto University and Tokyo Developed a new type of SiC diode with Nissan Honda R&D Co., Ltd. and ROHM tested The ROHM Group acquired SiCrystal,
SiC MOSFETs (Nov. 2005) Electron, announced the development of SiC epi Motors (Apr. 2008) prototype SiC power modules for hybrid an SiC wafer manufacturer ❸
(Jun. 2002) film mass-production technology vehicles ❶ (Sep. 2008) (Jul. 2009)
Announced the development of SiC (Jun. 2007) Released trench-type MOSFETs featuring the
Developed SiC MOSFET prototypes MOSFETs with the industry’s industry’s smallest ON-resistance : 1.7mΩcm2 ROHM tested prototype high temperature Developed the industry’s first high current
(Dec. 2004) smallest ON resistance (3.1mΩ/cm2) Trial manufacture of large current (300A) SiC (Sep. 2008) operation power modules that utilize SiC low resistance SiC trench MOSFET
(Mar. 2006) MOSFETs and SBDs (Schottky Barrier Diodes) elements and introduced a demo capable (Oct. 2009)
Nissan Motors conducted a driving experiment
(Dec. 2007) of operation at 250 ºC ❷
of a fuel-cell vehicle equipped with an inverter
(Oct. 2008)
using ROHM's SiC diode (Sep. 2008)

❸ ❹ ❺ ❻ ❼

2010 2011 2012 2013 2015 2016

Established an integrated SiC device Successfully developed the industry's Developed the industry's first transfer mold SiC Launched the industry's first mass production Performed a trial production of Integrated into the main drive inverter of
production system. Begin mass first SiC power modules containing power modules capable of high temperature of ''Full SiC'' power modules with SiC SBDs uninterruptible power supply equipment vehicles in Formula E, the world's premier
production of SiC SBDs ❹ trench MOSFETs and SBDs that can C) ❺
operation (up to 225° and SiC MOSFETs ❻ (Mar. 2012) using full SiC power modules in racing class for electric cars. For Season
(Apr. 2010) be integrated into motors (Oct. 2011) cooperation with Enegate and Kansai 3, which began on October 9, 2016, we
(Oct. 2010) Began mass production of SiC MOS Modules Electric Power (Jun. 2013) offer cutting-edge power semiconductors
APEI Inc. (Arkansas Power Electronics International) (Dec. 2012) History and SiC power devices for the inverter
Began mass production of SiC and ROHM developed high-speed, high-current block that comprises the core of the drive
MOSFETs (1000A-class) SiC trench MOS modules Started mass production of automotive SiC system, contributing to smaller, lighter,
(Dec. 2010) (Oct. 2011) SBD products (Sep. 2012) more efficient vehicles. ❼ (Oct. 2016)

27 Power Device 28
 ROHM has been focused on developing SiC for use as a material for next-generation power

Focusing on cutting-edge SiC technology and devices for years, collaborating with universities and end-users in order to cultivate technological
know-how and expertise. This culminated in Japan's first mass-produced Schottky barrier diodes

leading the industry through innovative R&D in April 2010 and the industry’s first commercially available SiC transistors (MOSFET) in December.
And in March 2012 ROHM unveiled the industry's first mass production of Full SiC Power Modules.

History
Max. Temp. = 250.8ºC

80% Duty Cycle

SiC Technology
Breakthrough

20% Duty Cycle

❶ ❷

2002 2005 2007 2008 2009

Began preliminary experiments with Shipped SiC MOSFET samples ROHM, along with Kyoto University and Tokyo Developed a new type of SiC diode with Nissan Honda R&D Co., Ltd. and ROHM tested The ROHM Group acquired SiCrystal,
SiC MOSFETs (Nov. 2005) Electron, announced the development of SiC epi Motors (Apr. 2008) prototype SiC power modules for hybrid an SiC wafer manufacturer ❸
(Jun. 2002) film mass-production technology vehicles ❶ (Sep. 2008) (Jul. 2009)
Announced the development of SiC (Jun. 2007) Released trench-type MOSFETs featuring the
Developed SiC MOSFET prototypes MOSFETs with the industry’s industry’s smallest ON-resistance : 1.7mΩcm2 ROHM tested prototype high temperature Developed the industry’s first high current
(Dec. 2004) smallest ON resistance (3.1mΩ/cm2) Trial manufacture of large current (300A) SiC (Sep. 2008) operation power modules that utilize SiC low resistance SiC trench MOSFET
(Mar. 2006) MOSFETs and SBDs (Schottky Barrier Diodes) elements and introduced a demo capable (Oct. 2009)
Nissan Motors conducted a driving experiment
(Dec. 2007) of operation at 250 ºC ❷
of a fuel-cell vehicle equipped with an inverter
(Oct. 2008)
using ROHM's SiC diode (Sep. 2008)

❸ ❹ ❺ ❻ ❼

2010 2011 2012 2013 2015 2016

Established an integrated SiC device Successfully developed the industry's Developed the industry's first transfer mold SiC Launched the industry's first mass production Performed a trial production of Integrated into the main drive inverter of
production system. Begin mass first SiC power modules containing power modules capable of high temperature of ''Full SiC'' power modules with SiC SBDs uninterruptible power supply equipment vehicles in Formula E, the world's premier
production of SiC SBDs ❹ trench MOSFETs and SBDs that can C) ❺
operation (up to 225° and SiC MOSFETs ❻ (Mar. 2012) using full SiC power modules in racing class for electric cars. For Season
(Apr. 2010) be integrated into motors (Oct. 2011) cooperation with Enegate and Kansai 3, which began on October 9, 2016, we
(Oct. 2010) Began mass production of SiC MOS Modules Electric Power (Jun. 2013) offer cutting-edge power semiconductors
APEI Inc. (Arkansas Power Electronics International) (Dec. 2012) History and SiC power devices for the inverter
Began mass production of SiC and ROHM developed high-speed, high-current block that comprises the core of the drive
MOSFETs (1000A-class) SiC trench MOS modules Started mass production of automotive SiC system, contributing to smaller, lighter,
(Dec. 2010) (Oct. 2011) SBD products (Sep. 2012) more efficient vehicles. ❼ (Oct. 2016)

27 Power Device 28
 ROHM Group Locations

ROHM Group ● Sales Offices ● Distribution Centers

Locations (Japan) Kyoto Nagoya Mito Takasaki ROHM Logistec Co., Ltd.
Tokyo Fukuoka Nishi-Tokyo Utsunomiya
Yokohama Matsumoto Sendai
● QA Centers
● Manufacturing Facilities Kyoto QA Center

ROHM Shiga Co., Ltd. LAPIS Semiconductor Miyagi Co., Ltd.

ROHM Hamamatsu Co., Ltd. LAPIS Semiconductor Miyazaki Co., Ltd.
ROHM Wako Co., Ltd.
ROHM Apollo Co., Ltd.
ROHM Mechatech Co., Ltd.

● Design Centers
Kyoto Technology Center (Head Office)
Kyoto Technology Center (Kyoto Ekimae)
Yokohama Technology Center
LAPIS Semiconductor Co., Ltd. (Shin-Yokohama)
ROHM Mechatech Co., Ltd.
LAPIS Semiconductor Miyazaki Design Center (Kyoto)
ROHM (Headquarters) LAPIS Semiconductor Miyagi Co., Ltd.
ROHM Logistec Co., Ltd. Kyoto (Miyagi)
(Okayama) Takasaki
ROHM Wako Co., Ltd. Matsumoto Sendai
Sales Offices (Okayama) Utsunomiya
Manufacturing Facilities Fukuoka Nishi-Tokyo Mito

Design Centers ROHM Apollo Co., Ltd.

Distribution Centers
QA Centers
(Fukuoka)

LAPIS Semiconductor
ROHM Shiga Co., Ltd.
(Shiga)
Nagoya
Tokyo
LAPIS Semiconductor (Headquarters)
Yokohama
ROHM Hamamatsu Co., Ltd.
(Shizuoka)
SiC for Eco
Miyazaki Co., Ltd.
(Miyazaki)
LAPIS Semiconductor
Miyazaki Design Center
(Miyazaki) Devices
ROHM Group ● Sales Offices ● Manufacturing Facilities Reducing environmental load
ASIA ROHM Semiconductor Korea Corporation ASIA ROHM Korea Corporation
Locations (Global) ROHM Electronics Philippines, Inc.
ROHM Semiconductor Trading (Dalian) Co., Ltd.
ROHM Semiconductor (Shanghai) Co., Ltd. ROHM Integrated Systems (Thailand) Co., Ltd. SiC power devices deliver superior energy savings.
ROHM Semiconductor (Shenzhen) Co., Ltd. ROHM Semiconductor (China) Co., Ltd.
ROHM Semiconductor Hong Kong Co., Ltd. ROHM Electronics Dalian Co., Ltd. ROHM is expanding its lineup of SiC power devices
ROHM Semiconductor Taiwan Co., Ltd. ROHM-Wako Electronics (Malaysia) Sdn. Bhd.
ROHM Semiconductor Singapore Pte. Ltd. ROHM Mechatech Philippines, Inc. with innovative new products that minimize power
ROHM Semiconductor Philippines Corporation ROHM Mechatech (Thailand) Co., Ltd.
ROHM Semiconductor (Thailand) Co., Ltd. consumption in order to reduce greenhouse gas
AMERICA Kionix, Inc.
ROHM Semiconductor Malaysia Sdn. Bhd.
EUROPE SiCrystal GmbH
ROHM Semiconductor India Pvt. Ltd.
emissions and lessen environmental impact.
AMERICA ROHM Semiconductor U.S.A., LLC
ROHM Semiconductor do Brasil Ltda.
EUROPE ROHM Semiconductor GmbH

● Design Centers ● QA Centers

ASIA Korea Design Center ASIA Korea QA Center
Shanghai Design Center Shanghai QA Center
Shenzhen Design Center Shenzhen QA Center
Taiwan Design Center Taiwan QA Center
India Design Center Thailand QA Center
AMERICA America Design Center (Santa Clara) AMERICA USA QA Center
EUROPE Europe Design Center EUROPE Europe QA Center
Finland Software Development Center
ROHM POWERVATION Ltd. Sales Offices
Manufacturing Facilities
Design Centers
Finland QA Centers
Ireland
Germany ROHM Semiconductor (China) Dalian
SiCrystal ROHM Electronics Dalian
Detroit Kionix
ROHM Integrated Systems (Thailand) U.S.A.
Shenzhen Korea Santa Clara
ROHM Mechatech (Thailand)
Hong Kong ROHM Korea
Thailand
Shanghai
India
Taiwan
Philippines
ROHM-Wako Electronics (Malaysia) ROHM Electronics Philippines
Malaysia ROHM Mechatech Philippines
Singapore
Brasil

29 Power Device 30
 ROHM Group Locations

ROHM Group ● Sales Offices ● Distribution Centers

Locations (Japan) Kyoto Nagoya Mito Takasaki ROHM Logistec Co., Ltd.
Tokyo Fukuoka Nishi-Tokyo Utsunomiya
Yokohama Matsumoto Sendai
● QA Centers
● Manufacturing Facilities Kyoto QA Center

ROHM Shiga Co., Ltd. LAPIS Semiconductor Miyagi Co., Ltd.

ROHM Hamamatsu Co., Ltd. LAPIS Semiconductor Miyazaki Co., Ltd.
ROHM Wako Co., Ltd.
ROHM Apollo Co., Ltd.
ROHM Mechatech Co., Ltd.

● Design Centers
Kyoto Technology Center (Head Office)
Kyoto Technology Center (Kyoto Ekimae)
Yokohama Technology Center
LAPIS Semiconductor Co., Ltd. (Shin-Yokohama)
ROHM Mechatech Co., Ltd.
LAPIS Semiconductor Miyazaki Design Center (Kyoto)
ROHM (Headquarters) LAPIS Semiconductor Miyagi Co., Ltd.
ROHM Logistec Co., Ltd. Kyoto (Miyagi)
(Okayama) Takasaki
ROHM Wako Co., Ltd. Matsumoto Sendai
Sales Offices (Okayama) Utsunomiya
Manufacturing Facilities Fukuoka Nishi-Tokyo Mito

Design Centers ROHM Apollo Co., Ltd.

Distribution Centers
QA Centers
(Fukuoka)

LAPIS Semiconductor
ROHM Shiga Co., Ltd.
(Shiga)
Nagoya
Tokyo
LAPIS Semiconductor (Headquarters)
Yokohama
ROHM Hamamatsu Co., Ltd.
(Shizuoka)
SiC for Eco
Miyazaki Co., Ltd.
(Miyazaki)
LAPIS Semiconductor
Miyazaki Design Center
(Miyazaki) Devices
ROHM Group ● Sales Offices ● Manufacturing Facilities Reducing environmental load
ASIA ROHM Semiconductor Korea Corporation ASIA ROHM Korea Corporation
Locations (Global) ROHM Electronics Philippines, Inc.
ROHM Semiconductor Trading (Dalian) Co., Ltd.
ROHM Semiconductor (Shanghai) Co., Ltd. ROHM Integrated Systems (Thailand) Co., Ltd. SiC power devices deliver superior energy savings.
ROHM Semiconductor (Shenzhen) Co., Ltd. ROHM Semiconductor (China) Co., Ltd.
ROHM Semiconductor Hong Kong Co., Ltd. ROHM Electronics Dalian Co., Ltd. ROHM is expanding its lineup of SiC power devices
ROHM Semiconductor Taiwan Co., Ltd. ROHM-Wako Electronics (Malaysia) Sdn. Bhd.
ROHM Semiconductor Singapore Pte. Ltd. ROHM Mechatech Philippines, Inc. with innovative new products that minimize power
ROHM Semiconductor Philippines Corporation ROHM Mechatech (Thailand) Co., Ltd.
ROHM Semiconductor (Thailand) Co., Ltd. consumption in order to reduce greenhouse gas
AMERICA Kionix, Inc.
ROHM Semiconductor Malaysia Sdn. Bhd.
EUROPE SiCrystal GmbH
ROHM Semiconductor India Pvt. Ltd.
emissions and lessen environmental impact.
AMERICA ROHM Semiconductor U.S.A., LLC
ROHM Semiconductor do Brasil Ltda.
EUROPE ROHM Semiconductor GmbH

● Design Centers ● QA Centers

ASIA Korea Design Center ASIA Korea QA Center
Shanghai Design Center Shanghai QA Center
Shenzhen Design Center Shenzhen QA Center
Taiwan Design Center Taiwan QA Center
India Design Center Thailand QA Center
AMERICA America Design Center (Santa Clara) AMERICA USA QA Center
EUROPE Europe Design Center EUROPE Europe QA Center
Finland Software Development Center
ROHM POWERVATION Ltd. Sales Offices
Manufacturing Facilities
Design Centers
Finland QA Centers
Ireland
Germany ROHM Semiconductor (China) Dalian
SiCrystal ROHM Electronics Dalian
Detroit Kionix
ROHM Integrated Systems (Thailand) U.S.A.
Shenzhen Korea Santa Clara
ROHM Mechatech (Thailand)
Hong Kong ROHM Korea
Thailand
Shanghai
India
Taiwan
Philippines
ROHM-Wako Electronics (Malaysia) ROHM Electronics Philippines
Malaysia ROHM Mechatech Philippines
Singapore
Brasil

29 Power Device 30
 Vol.5.3

ROHM SPICE Models

① A total of 4,883* models have been uploaded covering a wide range of products, from ICs to discretes

Products list* ■ ICs 2,250products

■ Discretes 2,633products (Power Devices, Transistors, Diodes, LEDs, etc...)

*October 2018 ROHM study

② SPICE models are stored in one place, making it possible to download files in 3 easy steps

Cadence's Website : PSpice.com

PSpice, one of the mainstream or CAD products,
is an industry-learning circuit simulation and
validation solution that enables continuous
ROHM page in PSpice
operation throughout Cadence's entire PCD http://www.pspice.com/
design flow. models/rohm

1) The information contained in this document is current as of October 1st, 2018.

2) The information contained herein is subject to change without notice. Before you use our Products, please contact our sales representative (as listed below) and verify the latest specifications.
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure,
please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any
damages arising out of the use of our Products beyond the rating specified by ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products.The peripheral conditions must be taken into account
when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise
intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative: transportation equipment (i.e. cars, ships, trains), primary communication
equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensure the accuracy of the information contained in this document. However, ROHM does not warrant that such information is error-free and ROHM shall have no responsibility for any damages
arising from any inaccuracy or misprint of such information.
11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office as listed below.
ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the
US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act.
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM.

R1098A

Santa Clara +1-408-720-1900 Stuttgart +49-711-7272370 Dalian +86-411-8230-8549 Malaysia +60-3-7931-8155

Atlanta +1-770-754-5972 Nuremberg +49-911-810452-26 Beijing +86-10-8525-2483 India +91-80-4125-0811
Boston +1-781-565-1138 France +33 (0) 1 40 60 87 30 Shanghai +86-21-6072-8612 Kyoto +81-75-365-1077
Chicago +1-847-368-1006 United Kingdom +44-1-908-272400 Shenzhen +86-755-8307-3008 Yokohama +81-45-476-2121
Detroit +1-248-348-9920 Finland +358-400-726 124 Hong Kong +852-2740-6262
San Diego +1-858-625-3600 Spain +34-9375-24320 Taiwan +886-2-2500-6956
Mexico +52-33-3123-2001 Hungary +36-1-950-5859 Singapore +65-6436-5100
Brazil +55-11-3539-6320 Italy +39-039-5783432 Philippines +63-2-807-6872
Germany +49-2154-921-0 Seoul +82-2-8182-700 Thailand +66-2-254-4890
No.61P7165E 11.2018 PDF