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Problems

The document discusses semiconductor physics and materials. It provides problems related to semiconductor crystal structures, band structures, doping, carrier concentrations, p-n junctions, and current flow mechanisms. The problems cover topics such as lattice structures, effective masses, Fermi levels, densities of states, diffusion, drift, built-in potentials, and current-voltage characteristics.

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56 views3 pages

Problems

The document discusses semiconductor physics and materials. It provides problems related to semiconductor crystal structures, band structures, doping, carrier concentrations, p-n junctions, and current flow mechanisms. The problems cover topics such as lattice structures, effective masses, Fermi levels, densities of states, diffusion, drift, built-in potentials, and current-voltage characteristics.

Uploaded by

Varsha
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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EE520

1. Find the primitive basis vectors of FCC and BCC lattice. Show that the reciprocal
lattice of FCC is BCC and that of BCC is FCC (Find out how to define reciprocal
lattice, or the lattice in k space).
2. A semiconductor material has the following E-k relations for the conduction and
valence bands: E – EC = 2(h/2)2k2/2m0 and E – EV = –3(h/2)2k2/2m0, m0 is the free
electron mass (10–28g). Find the effective masses of electrons and holes.

3. Consider an intrinsic semiconductor having the band structure of problem 2, with


EG=1eV, at T=300 OK. Calculate the (1) Fermi level position from midgap, (2)
effective density of states in the conduction and valence bands (NC, NV) and (3)
intrinsic carrier concentration. (Refer to Pierret, if necessary)

4. Consider problem 2, calculate the Fermi level position if the semiconductor if it is


doped with 1016 /cm3 donor atoms.

5. Consider the following e-k diagram, show that effective mass is less than 0 near the
top of conduction band and more than 0 at the base of conduction band. Is it possible
for effective mass to be negative, justify.

6. Sketch the following for a cubic crystal


a) (1 1̅ 1), (1 1 2̅), [1 1 0].
b) write all the members of a family of planes {111} and {110}.
c) Determine the angle between [111] and [110]

7. A silicon semiconductor crystal is uniformly doped with 1016/cm3 of phosphorus


atoms. Using law of mass action and taking ni= 1x 1010/cm3, determine the
concentration of electrons and holes in the sample. What happens, if instead of
phosphorus, boron atoms of the same concentration are used.

8. What are the charge states of donor atoms and acceptor atoms when they are empty
and occupied?
9. The surface of a Si wafer is a (100) plane.
(a) Sketch the placement of Si atoms on the surface of the surface.
(b) Determine the number of atoms per cm2 at the surface of the wafer.

10. Find out the planar atomic density for a plane (1 1 1) of FCC which has lattice
parameter ‘a’.

11. Find out the planar atomic density for a plane (1 1 0) of BCC which has lattice
parameter ‘a’.

12. Two semiconductor materials have exactly the same properties except that material A
has a band gap energy of 1.0 eV and material B has a band-gap energy of 1.2 eV.
Determine the ratio of ni of material A to that of material B.

13: Consider a semiconductor that is uniformly doped with Nd = 1014 cm-3 and Na = 0,
with an applied electric field of E = 100 V/cm. Assume that µn = 1000 cm2/V-s and
µp = 0. Also assume the following parameters:
Nc = 2 x l019 (T/300)3/2 cm-3
Nv = 1 x 1019 (T/300)3/2 cm-3
Eg = 1.10eV
(a) Calculate the electric-current density at T = 300 K. (b) At what temperature will
this current increase by 5 percent? (Assume the mobilities are independent of
temperature.)

14: An n-type semiconductor has excess carrier holes 10 14 cm-3, and a bulk minority carrier
lifetime 10-6 s in the bulk material, and a minority carrier lifetime 10 -7 s at the surface.
Assume zero applied electric field and let Dp = 10 cm2/s. Determine the steady state excess
carrier concentration as a function of distance from the surface (x = 0) of the semiconductor.

15: Assume that the donor concentration in an n-type semiconductor at T = 300 K is given by
Nd (x) = 1016 – 1019 x (cm-3)
Where x is given in cm and ranges between 0 ≤ x ≤ 1 µm.
Determine the induced electric field in a semiconductor in thermal equilibrium, given a linear
variation in doping concentration.

16: A sample of Ge at T = 300 K has a uniform donor concentration of 2 x 10 13 cm-3. The


excess carrier lifetime is found to be τ p0 = 24 µs. Determine the ambipolar diffusion
coefficient and the ambipolar mobility. What are the electron and hole lifetimes? (n i = 2.4 x
1013 cm-3)
17: The total current in a semiconductor is constant and is composed of electron drift current
and hole diffusion current. The electron concentration is constant and is equal to 10 16/cm3.
x
The hole concentration is given by, p(x) = 1015 x exp ( - ), x>0, where L = 12 micron. The
L
hole diffusion coefficient is Dh = 12 cm2/s and the electron mobility is µn = I000 cm2/V-s. The
total current density is J = 4.8 A/cm2. Calculate
a. the hole diffusion current density versus x,
b. the electron current density versus x, and
c. the electric field versus x.
18: Suppose a silicon diode is symmetrically doped at N d=Na=1015 cm-3. Answer the following
questions assuming room temperature, equilibrium conditions, and depletion approximation.
a) Compute Vbi.
b) Compute Xn ,Xp and W.
c) Compute V(x=0) and E(x=0).
d) Sketch ρ ( x ) vs x .

19: Determine the n-type doping concentration to meet the following specifications for a Si p-
n junction where NA = 1018 cm-3, Ɛmax = 4 x 105 V/cm at VR = 30 V, T = 300 K.

20: Consider a uniformly doped silicon p-n junction with doping concentration N A = 5 x 1017
cm-3 and ND = 1017 cm-3. (a) Calculate Vbi at T = 300 K. (b) Determine the temperature at
which Vbi decreases by 1 percent. (ni = 1.5 x 1010 cm-3, Nc = 2.8 x 1019 cm-3, Nv = 1.04 x 1019
cm-3).

21: Two p+n junctions are ideal and identical except that ND1=1015 cm-3 and
ND2=1016 cm-3. Compare IV characteristics of two diodes and plot on same set of axes.

22: Following drift-diffusion model, what is the dominant current flow mechanism in,
1. A region of high electric field with minimal concentration gradient
2. A region of high concentration gradient with minimal electric field

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