MITSUBISHI RF POWER MOS FET

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS
RD70HVF1
Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W

DESCRIPTION OUTLINE DRAWING

RD70HVF1 is a MOS FET type transistor specifically 25.0+/-0.3
designed for VHF/UHF High power amplifiers 7.0+/-0.5 11.0+/-0.3
applications.
4-C2
1
FEATURES
•High power and High Gain:

24.0+/-0.6

10.0+/-0.3
Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHz

9.6+/-0.3
Pout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHz
•High Efficiency: 60%typ.on VHF Band 2
+0.05
•High Efficiency: 55%typ.on UHF Band 0.1 -0.01
R1.6+/-0.15
3
4.5+/-0.7
5.0+/-0.3
APPLICATION 6.2+/-0.7
18.5+/-0.3
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
PIN

3.3+/-0.2
1.DRAIN
2.SOURCE
3.GATE
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED) UNIT:mm
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V 30 V
VGSS Gate to source voltage Vds=0V +/-20 V
Pch Channel dissipation Tc=25°C 150 W
Pin Input power Zg=Zl=50Ω 10(Note2) W
ID Drain current - 20 A
Tch Channel temperature - 175 °C
Tstg Storage temperature - -40 to +175 °C
Rth j-c Thermal resistance junction to case 1.0 °C/W
Note 1: Above parameters are guaranteed independently.
Note 2: Over 300MHz use spec is 20W

ELECTRICAL CHARACTERISTICS (Tc=25°C , UNLESS OTHERWISE NOTED)

LIMITS UNIT
SYMBOL PARAMETER CONDITIONS
MIN TYP MAX.
IDSS Zerogate voltage drain current VDS=17V, VGS=0V - - 300 uA
IGSS Gate to source leak current VGS=10V, VDS=0V - - 5 uA
VTH Gate threshold voltage VDS=12V, IDS=1mA 1.3 1.8 2.3 V
Pout Output power f=175MHz ,VDD=12.5V 70 75 - W
ηD Drain efficiency Pin=6W, Idq=2.0A 55 60 - %
Pout Output power f=520MHz ,VDD=12.5V 50 55 - W
ηD Drain efficiency Pin=10W, Idq=2.0A 50 55 - %
Load VSWR tolerance VDD=15.2V,Po=70W(PinControl) No destroy -
f=175MHz,Idq=2.0A,Zg=50Ω
LoadVSWR=20:1(All phase)
Load VSWR tolerance VDD=15.2V,Po=50W(PinControl) No destroy -
f=520MHz,Idq=2.0A,Zg=50Ω
Load VSWR=20:1(All phase)
Note : Above parameters , ratings , limits and conditions are subject to change.
RD70HVF1 MITSUBISHI ELECTRIC REV.3 7 Apr. 2004

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 MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HVF1
Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W

TYPICAL CHARACTERISTICS

CHANNNEL DISSIPATION VS. Vgs-Ids CHARACTERISTICS

AMBIENT TEMPERATURE 10
160
Ta=+25°C
140 Vds=10V
CHANNEL DISSIPATION

8
120
100 6
Pch(W)

Ids(A)
80
60 4

40
2
20
0 0
0 40 80 120 160 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
AMBIENT TEMPERATURE Ta(°C) Vgs(V)

Vds-Ids CHARACTERISTICS Vds VS. Ciss CHARACTERISTICS

10 350
Ta=+25°C
Vgs=3.7V 300
8
250 Ta=+25°C
f=1MHz
6
Ciss(pF)

Vgs=3.4V 200
Ids(A)

150
4 Vgs=3.1V
100
2 Vgs=2.8V
50
Vgs=2.5V
0 0
Vgs=2.2V
0 2 4 6 8 10 0 5 10 15 20
Vds(V) Vds(V)

Vds VS. Coss CHARACTERISTICS Vds VS. Crss CHARACTERISTICS

300 30
Ta=+25°C Ta=+25°C
25 f=1MHz
250 f=1MHz

200 20
Coss(pF)

Crss(pF)

150 15

100 10

50 5

0 0
0 5 10 15 20 0 5 10 15 20
Vds(V) Vds(V)

RD70HVF1 MITSUBISHI ELECTRIC REV.3 7 Apr. 2004

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 MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HVF1
Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W

TYPICAL CHARACTERISTICS

Pin-Po CHARACTERISTICS @f=175MHz Pin-Po CHARACTERISTICS @f=175MHz

100 100
Ta=+25°C Po
50 f=175MHz Po 100
Vdd=12.5V
80 80
Po(dBm) , Gp(dB) , Idd(A)

Idq=2A
40 80
ηd

Pout(W) , Idd(A)
ηｄ 60 60
30 60

ηd(%)
ηd(%)
Gp
40 Ta=25°C 40
20 40 f=175MHz
Vdd=12.5V
Idq=2A
10 20 20 Idd
20
Ｉｄｄ

0 0 0 0
10 20 30 40 0 2 4 6 8 10
Pin(dBm) Pin(W)

Pin-Po CHARACTERISTICS @f=520MHz Pin-Po CHARACTERISTICS @f=520MHz

50 100 70 70
Ta=+25°C Po
f=520MHz Po
Vdd=12.5V
60 60
40 80
Po(dBm) , Gp(dB) , Idd(A)

Idq=2A
50 ηd
50
Pout(W) , Idd(A)

ηｄ
30 60 40 40

ηd(%)
ηd(%)

30 Ta=25°C 30
20 40
f=520MHz
Gp
20 Vdd=12.5V 20
Ｉｄｄ Idq=2A
10 20 Idd
10 10

0 0 0 0
10 20 30 40 0 5 10 15 20
Pin(dBm) Pin(W)

Vdd-Po CHARACTERISTICS @f=175MHz Vdd-Po CHARACTERISTICS @f=520MHz

100 20 70 12
Ta=25°C 18 Ta=25°C
f=175MHz Po 60 f=520MHz Po 10
80 Pin=6W 16 Pin=10W
Idq=2A Idq=2A
14
Zg=ZI=50 ohm 50 Zg=ZI=50 ohm 8
60 12 Idd
Idd(A)

Idd(A)
Po(W)

Po(W)

Idd 10 40 6
40 8
30 4
6
20 4
20 2
2
0 0 10 0
4 6 8 10 12 14 4 6 8 10 12 14
Vdd(V) Vdd(V)

RD70HVF1 MITSUBISHI ELECTRIC REV.3 7 Apr. 2004

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 MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HVF1
Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W

TYPICAL CHARACTERISTICS

Vgs-Ids CHARACTERISTICS 2 +25°C

10
Vds=10V
8 Tc=-25~+75°C

6
Ids(A)

4
+75°C

2
-25°C
0
2 2.5 3 3.5 4
Vgs(V)

TEST CIRCUIT(f=175MHz)
Vgg Vdd

C1
9.1kOHM
L2 C3

8.2kOHM
100pF C2
72pF
56pF 175MHz
100OHM RD70HVF1
RF-IN L1 0-20pF 56pF
RF-OUT
56pF 0-20pF
18pF 20pF 0-20pF
35pF

100pF 37pF 8pF

10 10

21 20.5
43 41
138.5 150.5
165 190

Note:Board material-Teflon substrate

C1:2200pF 10uF in parallel
micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm
C2:2200pF*2 in parallel
C3:2200pF,330uF in parallel Dimensions:mm

L1:5Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire

L2:4Turns,I.D6mm,D1.6mm P=2 silver plateted copper wire

RD70HVF1 MITSUBISHI ELECTRIC REV.3 7 Apr. 2004

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 MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HVF1
Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W

TEST CIRCUIT(f=520MHz)

Vgg Vdd

C1
9.1kOHM C3
L3
15pF
8.2kOHM 100OHM
15pF C2
L1 520MHz L2
RD70HVF1
RF-IN
RF-OUT
56pF 56pF

0-10pF
22pF

15pF 5pF 0-10pF 5pF 15pF 15pF 5pF

12 8

40 18
45 38
70 88
80
100
100

Note:Board material-Teflon substrate

C1:2200pF 10uF in parallel
micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm
C2:2200pF*2 in parallel
C3:2200pF,330uF in parallel Dimensions:mm

L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire

L2:2Turns,I.D6mm,D1.6mm P=2 silver plateted copper wire
L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire

RD70HVF1 MITSUBISHI ELECTRIC REV.3 7 Apr. 2004

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 MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HVF1
Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W

INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS

Zo=10Ω
f=135MHz Zout*

f=175MHz Zout*

f=175MHz Zin*

f=135MHz Zin*

Zin, Zout
f Zin Zout
(MHz) (ohm) (ohm) Conditions
135 0.43-j3.19 0.70+j0.25 Po=90W, Vdd=12.5V,Pin=6W
175 0.55-j2.53 0.72-j0.36 Po=80W, Vdd=12.5V,Pin=6W

f=520MHz Zout*

Zo=10Ω
f=520MHz Zin*

f=440MHz Zout*

f=440MHz Zin*

Zin, Zout
f Zin Zout
(MHz) (ohm) (ohm) Conditions
440 0.74-j0.34 0.71-j0.18 Po=60W, Vdd=12.5V,Pin=10W
520 1.04+j0.63 0.93+j1.62 Po=55W, Vdd=12.5V,Pin=10W

RD70HVF1 MITSUBISHI ELECTRIC REV.3 7 Apr. 2004

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 MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HVF1
Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W

RD70HVF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA)

Freq. S11 S21 S12 S22
[MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
50 0.885 -174.0 8.441 72.4 0.013 -16.2 0.745 -170.3
100 0.906 -176.8 3.713 55.3 0.011 -30.9 0.805 -170.5
150 0.930 -179.0 2.095 41.2 0.008 -39.5 0.860 -173.3
175 0.939 179.8 1.647 35.9 0.007 -44.3 0.874 -174.6
200 0.946 178.7 1.337 32.3 0.006 -46.6 0.897 -175.6
250 0.957 176.7 0.908 24.8 0.004 -46.5 0.933 -178.1
300 0.967 174.7 0.661 19.4 0.002 -40.8 0.935 179.4
350 0.969 173.0 0.495 13.6 0.001 -23.4 0.952 177.2
400 0.976 171.0 0.378 12.2 0.002 38.2 0.965 175.0
450 0.974 169.6 0.316 5.4 0.003 73.6 0.965 172.9
500 0.980 168.0 0.276 2.3 0.003 75.6 0.973 171.4
520 0.978 167.2 0.247 0.9 0.003 75.3 0.974 170.6
550 0.980 166.2 0.216 -0.2 0.004 69.2 0.975 169.5
600 0.980 164.6 0.176 -1.5 0.005 74.3 0.974 167.8
650 0.982 163.3 0.156 -1.4 0.007 79.3 0.979 166.3
700 0.985 162.0 0.126 -3.3 0.007 75.4 0.983 164.9
750 0.982 160.7 0.108 -2.0 0.007 76.7 0.982 163.6
800 0.982 159.4 0.106 -1.1 0.009 77.1 0.984 162.0
850 0.984 158.1 0.107 -9.0 0.009 72.6 0.989 160.9
900 0.983 157.0 0.078 -13.4 0.010 72.1 0.983 159.6
950 0.984 155.9 0.079 -4.5 0.011 74.4 0.987 158.2
1000 0.985 154.6 0.067 -5.3 0.011 72.7 0.993 157.3

RD70HVF1 MITSUBISHI ELECTRIC REV.3 7 Apr. 2004

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 MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HVF1
Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W

Keep safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable
material or (iii) prevention against any malfunction or mishap.

RD70HVF1 MITSUBISHI ELECTRIC REV.3 7 Apr. 2004

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