MCQ of Electronics Devices by Thomas Floyd
MCQ of Electronics Devices by Thomas Floyd
6. The valence shell in a silicon atom has the number 17. The difference between an insulator and a
designationof semiconductoris
A. 1 B. 0 A. a wider energy gap between the valence band and
C. 3 D. 2 the conductionband
B. the number of freeelectrons
7. Valence electronsare C. the atomicstructure
A. in the closet orbit to thenucleus D. answers a, b andc
B. in various orbits around thenucleus
C. in the most distant orbit from thenucleus 18. The process of adding an impurity to an intrinsic
D. not associated with a particularatom semiconductor iscalled
A. atomicmodification B. doping
8. A positive ion is formedwhen C. recombination D. ionization
A. there are more holes than electrons in the outer
orbit 19. A trivalent impurity is added to silicon tocreate
B. two atoms bondtogether A. germanium
C. a valence electron breaks away from theatom B. an n-typesemiconductor
D. an atom gains extra valenceelectron C. a depletionregion
D. a p-typesemiconductor
9. The most widely used semiconductive material in
electronic deviceis 20. The purpose of a pentavalent impurity isto
A. silicon B. carbon A. increase the number of freeelectrons
C. germanium D. copper B. create minoritycarriers
C. reduce the conductivity ofsilicon
10. The energy band in which free electrons exist isthe D. increase the number ofholes
A. firstband B. conduction band
C. secondband D. valenceband 21. The majority carriers in an n-type semiconductorare
A. holes
B. conductionelectrons
11. Electron-holes pairs are producedby C. valenceelectron
A. ionization B. thermalenergy D. protons
C. recombination D.doping
22. Holes in an n-type semiconductorare
12. Recombination iswhen A. minority carriers that are thermallyproduced
A. a crystal isformed B. majority carriers that are thermallyproduced
B. a positive and a negative ion bondtogether C. minority carriers that are produced bydoping
C. an electron falls into ahole D. majority carriers that are produced bydoping
D. a valence electron becomes a conductionelectron
23. A pn junction is formedby
A. ionization
B. the boundary of a p-type and an n-typematerial
C. the recombination of electrons andholes
D. the collision of a proton and aneutron
24. The depletion region is createdby C. recombination D. answer a, b andc
A. ionization B.diffusion
25. The depletion region is consistof CHAPTER 2
A. nothing but minoritycarriers
B. positive and negativeions 35. The average value of a half-wave rectified voltage with a
C. no majoritycarriers peak value of 200 Vis
D. answer b andc A. 127.3V B. 141V
C. 0V D. 63.7V
26. The term biasmeans
A. a dc voltage is applied to control the operation of a 36. When a 60 Hz sinusoidal voltage is applied to the input of
device a half-wave rectifier, the output frequencyis
B. neither a, b nor c A. 60Hz B. 120Hz
C. the ratio of majority carriers to minoritycarriers C. 0Hz D. 30Hz
D. the amount of current across adiode
37. Thepeakvalueoftheinputtoahalf-waverectifieris10
27. To forward-bias adiode V. The approximate peak value of the output is
A. an external voltage is applied that is positive at the A. 10.7V B. 9.3V
anode and negative at thecathode C. 10V D. 3.18V
B. an external voltage applied that is negative at the
anode and positive at thecathode 38. For the circuit in Question in Question 3, the diode must
C. an external voltage is applied that is positive at the p be able to withstand a reverse voltageof
region and negative at the nregion A. 5V B. 10V
D. answer a andc C. 20V D. 3.18V
28. When diode isforward-biased 39. The average value of a full-wave rectified voltage with a
A. the only current is holecurrent peak value of 75 Vis
B. the only current is produced by majoritycarriers A. 37.5V B. 23.9V
C. the current is produced by both holes andelectrons C. 53V D. 47.8V
D. the only current is electroncurrent
40. When a 60 Hz sinusoidal voltage is applied to the input of
29. Although current is blocked in reversebias a full-wave rectifier, the output frequencyis
A. there is some current due to majoritycarriers A. 60Hz B. 120Hz
B. there is very small current due to minoritycarriers C. 240Hz D. 0Hz
C. there is an avalanchecurrent
41. The total secondary voltage in a center-tapped full-wave
30. For a silicon diode, the value of the forward-bias voltage rectifier is 125 rms. Neglecting the diode drop, the rms
typically output voltageis
A. must be greater than 0.3V A. 117V B. 100V
B. depends on the width of the depletionregion C. 62.5V D. 125V
C. depends on the concentration of majoritycarriers
D. must be greater than 0.7V 42. When the peak output voltage is 100 V, the PIV for each
diode in a center-tapped full-wave rectifier is (neglecting
31. When forward-biased, adiode the diodedrop)
A. blockcurrent A. 100V B. 141V
B. has a highresistance C. 200V D. 50V
C. conductscurrent
D. drops a largevoltage 43. When the rms output voltage of a bridge full wave
rectifier is 20 V, the peak inverse voltage across the
32. When a voltmeter is placed across a forward-biased diodes is (neglecting the diodedrop)
diode, it will read a voltage approximately equalto A. 28.3V B. 20V
A. the diode barrierpotential C. 40V D. 56.6V
B. the bias batteryvoltage
C. the total circuitvoltage 44. The ideal dc output voltage of a capacitor-input filter is
D. 0V equalto
A. the average value of the rectifiedvoltage
33. A silicon diode is in series with 1.0 kΩ resistor and a 5 V B. the rms value of the rectifiedvoltage
battery. If the anode is connected to the positive battery C. the peak value of the rectifiedvoltage
terminal, the cathode voltage with respect to the
negative battery terminalis 45. A certain power supply filter produces an output with a
A. 0.7V B. 5.7V ripple of 100 mV peak-to-peak and a dc value of 20 V.
C. 0.3V D. 4.3V The ripple factoris
A. 0.005 B.0.05
34. The positive lead of an ohmmeter is connected to the C. 0.02 D.0.00005
anode of a diode and the negative lead is connected to
the cathode. The diodeis 46. A 60 V peak full-wave rectified voltage is applied to a
capacitor-input filter. If f = 120 Hz. R L= 10 k Ω and C = 10
μF, the ripple voltageis
A. 0.6V B. 5.0V
C. 6mV D. 2.88V
A. reverse-biased B. forward-biased
C. open D. faulty
E. answers b and d
47. If the load resistance of a capacitor-filtered full-wave A. isnotaffected B.increases
rectifier is reduced, the ripplevoltage C. decreases D. has a differentfrequency
58. A no-load condition meansthat
48. Line regulation is determinedby A. the load has infiniteresistance
A. zener current and load current B. the load has zeroresistance
B. changes in load resistance and outputvoltage C. answer a andc
C. loadcurrent D. the output terminal areopen
D. changes in output voltage and inputvoltage
59. A varactor diodeexhibits
49. Load regulations is determinedby A. a variable capacitance that depends on forward
A. changes in zener current and loadcurrent current
B. changes in load current and outputvoltage B. a variable capacitance that depends on reverse
C. changes in load current and inputvoltage voltage
D. changes in load resistance and inputvoltage C. a constant capacitance over a range of reverse
voltages
50. A 10 V peak-to-peak sinusoidal voltage is applied across a D. a variable resistance that depends on reverse
silicon diode and series resistor. The maximum voltage voltage
across the diodeis
A. 0.7V B. 10V 60. AnLED
C. 9.3V D. 5V A. emits light whenforward-biased
E. 4.3V B. emits light whenreverse-biased
C. acts as a variableresistance
51. If the input voltage to a voltage tripler has an rms value D. senses light whenreverse-biased
of 12 V, the dc output voltage isapproximately
A. 36V B. 33.9V 61. Compared to a visible red LED, an infraredLED
C. 32.4V D. 50.9 V A. produces light with longerwavelength
B. produces light whenreverse-biased
52. If one of the diode in a bridge full-wave rectifier opens, C. produces light with shorterwavelengths
the outputis D. produces only one color oflight
A. one-fourth the amplitude of the inputvoltage
B. 0V 62. The internal resistance of aphotodiode
C. 120 Hzvoltage A. increase with light intensity whenforward-biased
D. a half-wave rectifiedvoltage B. decrease with light intensity whenforward-biased
C. increases with light intensity whenreverse-biased
53. If you are checking a 60 Hz full-wave bridge rectifier and D. decrease with light intensity whenforward-biased
observe that the output has a 60 Hzripple
A. the filter capacitor isleaky 63. A diode that has a negative resistance characteristics is
B. the transformer secondary isshorted the
C. there is an opendiode A. tunneldiode B. laserdiode
D. the circuit is workingproperly C. schottkydiode D. hot-carrierdiode
81. The maximum value of collector current in a biased 91. Collector-feedback biasis
transistoris A. based on the principle of negativefeedback
A. βDCIB B. IC(sat) B. based on betamultiplication
C. greaterthanIE D. IE-IB C. based on the principle of positivefeedback
D. not verystable
96. The parameter hfecorrespondsto 107.A CE amplifier is driving a 10 kΩ load. If RC= 2.2 kΩ and
A. βAC B. βDC r’e= 10 Ω, the voltage gain isapproximately
C. r’c D.r’e A. 180 B. 220
C. 10 D.1000
97. If the dc emitter current in a certain transistor amplifier is
3 mA, the approximate value of r’eis 108.The overall gain found in Question 14 can be expressed
A. 3Ω B. 3kΩ in decibelsas
C. 0.33kΩ D. 8.33Ω A. 47.0dB B. 35.6dB
C. 94.1dB D. 69.8dB
98. A certain common-emitter amplifier has a voltage gainof
100. If the emitter bypass capacitor isremoved, CHAPTER 7
A. the voltage gain willdecrease
B. the voltage gain willincrease 109.The JFETis
C. the circuit will becomeunstable A. a unipolardevice
D. the Q-point willshift B. a voltage-controlleddevice
C. a current-controlleddevice
99. For a common-collector amplifier, R E= 100 Ω, r’e= 10 Ω, D. answer a andc
and βAC= 150. The ac input resistance at the baseis E. answer a and b
A. 16.5Ω B. 15kΩ
C. 110Ω D. 1500Ω 110.The channel of a JFET is betweenthe
A. drainandsource B. gate anddrain
100.If a 10 mV signal is applied to the base of the emitter- C. inputandoutput D. gate andsource
follower circuit in Question 5, the output signal is
approximately 111.A JFET always operateswith
A. 1.5mV B. 10mV A. the gate connected to thesource
C. 100mV D. 150mV B. the gate-to-source pn junctionforward-biased
C. the gate-to-source pn junctionreverse-biased
101.For a common-emitter amplifier, R C= 1.0 kΩ, RE= 390 Ω, D. the drain connected toground
and βac= 75. Assuming the REis completely bypassed at
the operating frequency, the voltage gainis 112.For VGS= 0 V, the drain current becomes constant when
A. 2.56 B.66.7 VDSexceeds
C. 2.47 D.75 A. 0V B.Vp
C. VDD D.cutoff
102.In the circuit of Question 7, if the frequency is reduced to
the point where XC(bypass)= RE, the voltagegain 113.The constant-current area of a FET liesbetween
A. remainsthesame B. isless A. pinch-offandbreakdown B. 0 andIDSS
C. isgreater D. C. cutoffand saturation D. cutoff andpinch-off
123.A certain D-MOSFET is biased at VGS= 0 V. Its data sheet 133.A CS amplifier has a load resistance of 10 kΩ and R D= 820
specifies IDSS= 20 mA and VGS(off)= - 5 V. The value of the Ω, If gm= 5 mS and Vin= 500 mV, the output signal
draincurrent voltageis
A. is0A B. cannot bedetermined A. 1.89 V B. 2.05 V
C. is20mA D. C. 25V D. 0.5 V
124.An n-channel D-MOSFET with positive VGSis operating in 134.If the load resistance in Question 7 is removed, the
A. thedepletionmode B. cutoff output voltage will
C. theenhancementmode D.saturation A. staythesame B. decrease
C. increase D. bezero
125.A certain p-channel E-MOSFET has a V GS(th)= - 2 V. If V GS= 0
V, the drain currentis 135.A certain common-drain (CD) amplifier with R S= 1.0 kΩ
A. 0A B.maximum has a transconductance of 6000 μS. The voltage gain is
C. IDSS D.ID(on) A. 1 B. 0.86
C. 0.98 D.6
126.A TMOSFET is a special typeof
A. JFET B. D-MOSFET 136.The data sheet for the transistor used in a CD amplifier
C. answer aandc D. E-MOSFET specifies IGSS= 5 nA at V GS= 10 V. If the resistor from ate to
ground, RG, is 50 MΩ, the total input resistance is
CHAPTER8 approximately.
A. 50MΩ B. 200MΩ
127.In a common-source amplifier, the output voltage is 180˚ C. 40MΩ D. 20.5MΩ
out of phase with theinput
A. in phase with theinput 137.The common-gate (CG) amplifier differs from both the CS
B. taken at thesource and CD configuration in that it hasa
C. taken at thedrain A. much higher voltagegain
D. answer a andc B. much lower voltagegain
E. answer a andd C. much higher inputresistance
D. much lower inputresistance
128.In a certain common-source (CS) amplifier, V DS= 3.2 V rms
and VGS= 280 mV rms. The voltage gainis 138.If you are looking for both good voltage gain and high
A. 1 B. 11.4 input resistance, you must use a
C. 8.75 D.3.2 A. CSamplifier B. CDamplifier
C. CGamplifier D.
143.A certain class A power amplifier delivers 5 W to a load 153.The maximum efficiency of a class B push-pull amplifieris
with an input signal power of 100 mW. The power gain is A. 25% B.50%
A. 100 B.50 C. 79% D. 98%
C. 250 D.5
154.The output of a certain two-supply class B push pull
144.The peak current a class A power amplifier can deliver to amplifier has a VCCof 20 V. If the load resistance is 50 Ω,
a load depends onthe the value of IC(sat)is
A. maximum rating of the powersupply A. 5mA B. 0.4A
B. quiescentcurrent C. 4mA D. 40mA
C. current in the biasresistor
D. size of the heatsink 155.The maximum efficiency of a class AB amplifieris
A. higher than a classB
145.For maximum output, a class A power amplifier must be B. the same as classB
maintain a value of quiescent current thatis C. about the same as a classA
A. one-half the peak loadcurrent D. slightly less than a classB
B. twice the peak loadcurrent
C. at least as large as the peak loadcurrent 156.The power dissipation of a class C amplifier isnormally
D. just above the cutoffvalue A. verylow B. veryhigh
C. the same as aclassB D. the same as a classA
146.A certain class A power amplifier has V CEQ= 12 V and ICQ= 1
A. The maximum signal power outputis 157.The efficiency of a class C amplifieris
A. 6W B. 12W A. less than classA
C. 1W D. 0.707W B. less than classB
C. less than classAB
147.The efficiency of a power amplifier is the ratio of the D. greater than classes A, B, orAB
power delivered to the load tothe
A. input signalpower 158.The transistor in a class C amplifier conductsfor
B. power dissipated in the laststage A. more than 180˚ of the inputcycle
C. power from the dc powersupply B. one-half of the inputcycle
D. none of theseanswer C. a very small percentage of the inputcycle
D. all of the inputcycle
148.The maximum efficiency of a class A power amplifieris
A. 25% B. 50% CHAPTER 10
C. 79% D. 98%
159.The low-frequency response of an amplifier is
149.The transistor is a class B amplifier arebiased determined in part by
in saturation
A. into cutoff B. A. the voltagegain
right C. at midpoint of the load line D. at B. the type oftransistor
cutoff C. the supplyvoltage
D. the couplingcapacitors
150.Crossover distortion is a problemfor
A. classAamplifiers B. class AB 160.The high-frequency response of an amplifier is
amplifiers determined in part by
C. classBamplifiers D. all of these A. the gain-bandwidthproduct
amplifiers B. the bypasscapacitor
C. the internal transistorcapacitances
151.A BJT class B push-pull amplifier with no transformer D. theroll-off
couplinguses
A. twonpntransistors B. two pnptransistors 161.The bandwidth of an amplifier is determinedby
C. complementary symmetrytransistors A. the midrangegain
D. none ofthese B. the criticalfrequencies
C. the roll-offrate
D. the inputcapacitance
183.The triacis
A. like a bi-directionalSCR
B. a four-terminaldevice
C. not athyristor
D. answer a andb
184.The SCS differs from the SCRbecause D. it has two gateterminals
A. it does not have a gateterminal
B. its holding current isless 185.The SCS can be turned onby
C. it can handle much highercurrents A. an anode voltage that exceeds forward-breakover
voltage 195.In the commonmode,
B. a positive pulse on the anodegate A. both inputs aregrounded
C. a negative pulse on the anodegate B. the output are connectedtogether
D. either b or c C. an identical signal appears on bothinputs
D. the output signals arein-phase
186.The SCS can be turned offby
A. a negative pulse on the cathode gate and a positive 196.Common-mode gainis
pulse on the anodegate A. veryhigh B. verylow
B. reducing the anode current to below the holding C. alwaysunity D.unpredictable
value
C. answer a andb 197.If Av(d)= 3500 and Acm= 0.35, the CMRRis
D. a positive pulse on the cathode gate and a negative A. 1225 B. 10,000
pulse on the anodegate C. 80dB D. answers b andc
187.Which of the following is not a characteristic of theUJT? 198.With zero volts on both inputs, an op-amp ideally should
A. intrinsic standoffratio have an output equalto
B. negativeresistance A. the positive supplyvoltage
C. peak-pointvoltage B. the negative supplyvoltage
D. bilateralconduction C. zero
D. theCMRR
188.The PUTis
A. much like theUJT 199.Of the valued listed, the most realistic value for open-
B. not athyristor loop gain of an op-ampis
C. triggered on and off by the gate-to-anodevoltage A. 1 B. 2000
D. not a four-layerdevice C. 80db D.100,000
189.In a phototransistor, base currentis 200.A certain op-amp has a bias current of 50μA and 49.3μA.
A. set by biasvoltage The input offset current is
B. directly proportional tolight A. 700nA B. 99.3μA
C. inversely proportional tolight C. 49.7μA D. none ofthese
D. not afactor
201.Theoutputofaparticularop-ampincreases8Vin12μs.
CHAPTER 12 The slew rate is
A. 96V/μs B. 0.67 V/μs
190.An integrated circuit (IC) op-amphas C. 1.5V/μs D. none of theabove
A. two inputs and twooutputs
B. one input andone-output 202.The purpose of offset nulling isto
C. two inputs and oneoutput A. reducegain
B. equalize the inputsignals
191.Which of the following characteristics does not C. zero the output errorvoltage
necessarily apply to an op-amp?
A. high gain B. lowpower 203.For an op-amp with negative feedback, the outputis
C. highinputimpedance D. low outputimpedance A. equal to theinput
B. increased
192.A differentialamplifier C. fed back to the invertinginput
A. is part of anop-amp D. fed back to the noninvertinginput
B. has one input and oneoutput
C. has twooutputs 204.The use of negativefeedback
D. answer a andc A. reduces the voltage gain of anop-amp
B. makes the op-amposcillate
193.When an op-amp is operated in the single-ended mode, C. makes linear operationpossible
the output isgrounded D. answer a andc
A. one input is grounded and a signal is applied to the
other 205.Negativefeedback
B. both inputs are connectedtogether A. increases the input and outputimpedances
C. the output is notinverted B. increases the input impedance and thebandwidth
C. decreases the output impedance and thebandwidth
194.In the differential mode, D. does not affect impedances ofbandwidth
A. opposite polarity signals are applied to theinputs
B. the gain is1 206.A certain inverting amplifier has an Riof 0.1 kΩ and an
C. the output are differentamplitudes Rfof 100 kΩ. The closed loop gain is
D. only one supply voltage usused A. 100,000 B. 1000
C. 101 D.100
217.If a certain op-amp has a midrange open-loop gain of 226.A summing amplifier canhave
200,000 and a unity gain frequency of 5 MHz, the gain- A. only oneinput
bandwidth product is B. only twoinputs
A. 200,000 Hz C. any number ofinputs
B. 1 x 1012Hz
C. 5,000,000 Hz 227.If the voltage gain for each input of a summing amplifier
D. not determinable from the information with a 4.7 kΩ feedback resistor is unity, the input resistor
must have a valueof
218.If a certain op-amp has a closed-loop gain of 20 and an A. 4.7kΩ
upper critical frequency of 10 MHz, the gain-bandwidth B. 4.7 kΩ divided by number ofinputs
productis C. 4.7 kΩ times the number ofinputs
A. 200MHz B. 10MHz
C. theunity-gainfrequency D. answer a andc 228.An average amplifier has five inputs. The ratio R fIRimust
be
A. 5 B. 0.2
C. 1
236.To make a basic instrumentation amplifier, ittakes 245.The voltage gain of an OTA circuit is setby
A. one op-amp with a certain feedbackarrangement A. a feedbackresistor
B. two op-amps and sevenresistors B. the transconductanceonly
C. three op-amps and sevencapacitors C. the transconductance and the loadresistor
D. three op-amps and seven resistors D. the bias current and supplyvoltage
259.The damping factor of a filter is setby 269.A second condition for oscillationis
A. the negative feedbackcircuit A. no gain around the feedbackloop
B. the positive feedbackcircuit B. a gain of 1 around the feedbackloop
C. the frequency-selectivecircuit C. the attenuation of the feedback circuit must be one-
D. the gain of theop-amp third
D. the feedback circuit must becapacitive
260.The number of poles in a filter affectthe
A. voltagegain B. bandwidth 270.In a certain oscillator, AV= 50. The attenuation of the
C. centerfrequency D. roll-off rate feedback circuit mustbe
A. 1 B. 0.01
261.Sallen-Key filtersare C. 10 D. 0.02
A. single-polecircuit
B. second-orderfilters 271.For an oscillator to properly start, the gain around the
C. butterworth filters feedback loop must initially be
D. band-passfilters A. 1 B. less than1
C. greaterthan1 D. equal toB
262.When filters are cascaded, the roll-offrate
A. increases B. decreases 272.In a Wien-bridge oscillator, if the resistance in the
C. does notchange positive
A. feedback circuit are decreased, the frequency
263.When the low-pass and a high-pass filter are cascaded to B. decreases
get a band-pass filter, the critical frequency of the low- C. increases
pass filter mustbe D. remains thesame
A. equal to the critical frequency of the high-passfilter
B. less than the critical frequency of the high-passfilter 273.The Wien-bridge oscillator’s positive feedback circuitis
C. greater than critical frequency of the high-pass filter A. an RLcircuit B. an LCcircuit
C. avoltagedivider D. a lead-lagcircuit
264.A state-variable filter consist of
A. one op-amp with multiple-feedbackpaths 274.A phase-shift oscillatorhas
B. a summing amplifier and twointegrators A. threeRCcircuits B. three LCcircuits
C. a summing amplifier and twodifferentiators C. aT-typecircuit D. a π-typecircuits
D. three butterworthstages
275.Colpitts, Clapp, and Hartley are names referto
A. types of RCoscillation
B. inventors of thetransistor
C. types of LCoscillators
D. types offilters