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MCQ of Electronics Devices by Thomas Floyd

The document discusses semiconductors and diodes. It covers: 1) Atoms in a semiconductor crystal are held together by covalent bonds formed by the interaction of valence electrons. 2) A diode allows current to flow easily in one direction when forward biased by applying a positive voltage at the anode, but blocks current in the reverse direction. 3) A pn junction is formed at the boundary between a p-type semiconductor and an n-type semiconductor, creating a depletion region with no free charges.

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0% found this document useful (0 votes)
2K views14 pages

MCQ of Electronics Devices by Thomas Floyd

The document discusses semiconductors and diodes. It covers: 1) Atoms in a semiconductor crystal are held together by covalent bonds formed by the interaction of valence electrons. 2) A diode allows current to flow easily in one direction when forward biased by applying a positive voltage at the anode, but blocks current in the reverse direction. 3) A pn junction is formed at the boundary between a p-type semiconductor and an n-type semiconductor, creating a depletion region with no free charges.

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ranaateeq
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© © All Rights Reserved
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You are on page 1/ 14

CHAPTER 1 13.

In a semiconductor crystal, the atoms are held together


by
1. Every known elementhas A. forces ofattraction
A. the same type ofatoms B. the interaction of valenceelectrons
B. a unique type ofatom C. covalentbonds
C. the same number ofatoms D. answer a, b,c
D. several different types ofatom
14. Each atom in a silicon crystal has
2. An atom consistof A.no valence electrons because all are shared with
A. one nucleus and only oneelectron othersatoms
B. one nucleus and one or moreelectrons B. eight valence electrons because all are with other
C. protons, electrons, andneutrons atoms
D. answer b orc C. four valenceelectrons
D.four conductionelectrons
3. The nucleus of an atom is made upto
A. proton andneutrons 15. The current in a semiconductor is producedby
B. electrons andprotons A. holesonly
C. electrons B. electronsonly
D. electrons andprotons C. both electrons andholes
D. negativeions
4. The atomic number of siliconis
A. 8 B. 14 16. In an intrinsicsemiconductor
C. 4 D.2 A. there are no freeelectrons
B. the free electrons are thermallyproduced
5. The atomic number of germaniumis C. there are onlyholes
A. 32 B. 4 D. there are as many electrons as there areholes
C. 2 D. 8 E. answer b andd

6. The valence shell in a silicon atom has the number 17. The difference between an insulator and a
designationof semiconductoris
A. 1 B. 0 A. a wider energy gap between the valence band and
C. 3 D. 2 the conductionband
B. the number of freeelectrons
7. Valence electronsare C. the atomicstructure
A. in the closet orbit to thenucleus D. answers a, b andc
B. in various orbits around thenucleus
C. in the most distant orbit from thenucleus 18. The process of adding an impurity to an intrinsic
D. not associated with a particularatom semiconductor iscalled
A. atomicmodification B. doping
8. A positive ion is formedwhen C. recombination D. ionization
A. there are more holes than electrons in the outer
orbit 19. A trivalent impurity is added to silicon tocreate
B. two atoms bondtogether A. germanium
C. a valence electron breaks away from theatom B. an n-typesemiconductor
D. an atom gains extra valenceelectron C. a depletionregion
D. a p-typesemiconductor
9. The most widely used semiconductive material in
electronic deviceis 20. The purpose of a pentavalent impurity isto
A. silicon B. carbon A. increase the number of freeelectrons
C. germanium D. copper B. create minoritycarriers
C. reduce the conductivity ofsilicon
10. The energy band in which free electrons exist isthe D. increase the number ofholes
A. firstband B. conduction band
C. secondband D. valenceband 21. The majority carriers in an n-type semiconductorare
A. holes
B. conductionelectrons
11. Electron-holes pairs are producedby C. valenceelectron
A. ionization B. thermalenergy D. protons
C. recombination D.doping
22. Holes in an n-type semiconductorare
12. Recombination iswhen A. minority carriers that are thermallyproduced
A. a crystal isformed B. majority carriers that are thermallyproduced
B. a positive and a negative ion bondtogether C. minority carriers that are produced bydoping
C. an electron falls into ahole D. majority carriers that are produced bydoping
D. a valence electron becomes a conductionelectron
23. A pn junction is formedby
A. ionization
B. the boundary of a p-type and an n-typematerial
C. the recombination of electrons andholes
D. the collision of a proton and aneutron
24. The depletion region is createdby C. recombination D. answer a, b andc
A. ionization B.diffusion
25. The depletion region is consistof CHAPTER 2
A. nothing but minoritycarriers
B. positive and negativeions 35. The average value of a half-wave rectified voltage with a
C. no majoritycarriers peak value of 200 Vis
D. answer b andc A. 127.3V B. 141V
C. 0V D. 63.7V
26. The term biasmeans
A. a dc voltage is applied to control the operation of a 36. When a 60 Hz sinusoidal voltage is applied to the input of
device a half-wave rectifier, the output frequencyis
B. neither a, b nor c A. 60Hz B. 120Hz
C. the ratio of majority carriers to minoritycarriers C. 0Hz D. 30Hz
D. the amount of current across adiode
37. Thepeakvalueoftheinputtoahalf-waverectifieris10
27. To forward-bias adiode V. The approximate peak value of the output is
A. an external voltage is applied that is positive at the A. 10.7V B. 9.3V
anode and negative at thecathode C. 10V D. 3.18V
B. an external voltage applied that is negative at the
anode and positive at thecathode 38. For the circuit in Question in Question 3, the diode must
C. an external voltage is applied that is positive at the p be able to withstand a reverse voltageof
region and negative at the nregion A. 5V B. 10V
D. answer a andc C. 20V D. 3.18V

28. When diode isforward-biased 39. The average value of a full-wave rectified voltage with a
A. the only current is holecurrent peak value of 75 Vis
B. the only current is produced by majoritycarriers A. 37.5V B. 23.9V
C. the current is produced by both holes andelectrons C. 53V D. 47.8V
D. the only current is electroncurrent
40. When a 60 Hz sinusoidal voltage is applied to the input of
29. Although current is blocked in reversebias a full-wave rectifier, the output frequencyis
A. there is some current due to majoritycarriers A. 60Hz B. 120Hz
B. there is very small current due to minoritycarriers C. 240Hz D. 0Hz
C. there is an avalanchecurrent
41. The total secondary voltage in a center-tapped full-wave
30. For a silicon diode, the value of the forward-bias voltage rectifier is 125 rms. Neglecting the diode drop, the rms
typically output voltageis
A. must be greater than 0.3V A. 117V B. 100V
B. depends on the width of the depletionregion C. 62.5V D. 125V
C. depends on the concentration of majoritycarriers
D. must be greater than 0.7V 42. When the peak output voltage is 100 V, the PIV for each
diode in a center-tapped full-wave rectifier is (neglecting
31. When forward-biased, adiode the diodedrop)
A. blockcurrent A. 100V B. 141V
B. has a highresistance C. 200V D. 50V
C. conductscurrent
D. drops a largevoltage 43. When the rms output voltage of a bridge full wave
rectifier is 20 V, the peak inverse voltage across the
32. When a voltmeter is placed across a forward-biased diodes is (neglecting the diodedrop)
diode, it will read a voltage approximately equalto A. 28.3V B. 20V
A. the diode barrierpotential C. 40V D. 56.6V
B. the bias batteryvoltage
C. the total circuitvoltage 44. The ideal dc output voltage of a capacitor-input filter is
D. 0V equalto
A. the average value of the rectifiedvoltage
33. A silicon diode is in series with 1.0 kΩ resistor and a 5 V B. the rms value of the rectifiedvoltage
battery. If the anode is connected to the positive battery C. the peak value of the rectifiedvoltage
terminal, the cathode voltage with respect to the
negative battery terminalis 45. A certain power supply filter produces an output with a
A. 0.7V B. 5.7V ripple of 100 mV peak-to-peak and a dc value of 20 V.
C. 0.3V D. 4.3V The ripple factoris
A. 0.005 B.0.05
34. The positive lead of an ohmmeter is connected to the C. 0.02 D.0.00005
anode of a diode and the negative lead is connected to
the cathode. The diodeis 46. A 60 V peak full-wave rectified voltage is applied to a
capacitor-input filter. If f = 120 Hz. R L= 10 k Ω and C = 10
μF, the ripple voltageis
A. 0.6V B. 5.0V
C. 6mV D. 2.88V
A. reverse-biased B. forward-biased
C. open D. faulty
E. answers b and d
47. If the load resistance of a capacitor-filtered full-wave A. isnotaffected B.increases
rectifier is reduced, the ripplevoltage C. decreases D. has a differentfrequency
58. A no-load condition meansthat
48. Line regulation is determinedby A. the load has infiniteresistance
A. zener current and load current B. the load has zeroresistance
B. changes in load resistance and outputvoltage C. answer a andc
C. loadcurrent D. the output terminal areopen
D. changes in output voltage and inputvoltage
59. A varactor diodeexhibits
49. Load regulations is determinedby A. a variable capacitance that depends on forward
A. changes in zener current and loadcurrent current
B. changes in load current and outputvoltage B. a variable capacitance that depends on reverse
C. changes in load current and inputvoltage voltage
D. changes in load resistance and inputvoltage C. a constant capacitance over a range of reverse
voltages
50. A 10 V peak-to-peak sinusoidal voltage is applied across a D. a variable resistance that depends on reverse
silicon diode and series resistor. The maximum voltage voltage
across the diodeis
A. 0.7V B. 10V 60. AnLED
C. 9.3V D. 5V A. emits light whenforward-biased
E. 4.3V B. emits light whenreverse-biased
C. acts as a variableresistance
51. If the input voltage to a voltage tripler has an rms value D. senses light whenreverse-biased
of 12 V, the dc output voltage isapproximately
A. 36V B. 33.9V 61. Compared to a visible red LED, an infraredLED
C. 32.4V D. 50.9 V A. produces light with longerwavelength
B. produces light whenreverse-biased
52. If one of the diode in a bridge full-wave rectifier opens, C. produces light with shorterwavelengths
the outputis D. produces only one color oflight
A. one-fourth the amplitude of the inputvoltage
B. 0V 62. The internal resistance of aphotodiode
C. 120 Hzvoltage A. increase with light intensity whenforward-biased
D. a half-wave rectifiedvoltage B. decrease with light intensity whenforward-biased
C. increases with light intensity whenreverse-biased
53. If you are checking a 60 Hz full-wave bridge rectifier and D. decrease with light intensity whenforward-biased
observe that the output has a 60 Hzripple
A. the filter capacitor isleaky 63. A diode that has a negative resistance characteristics is
B. the transformer secondary isshorted the
C. there is an opendiode A. tunneldiode B. laserdiode
D. the circuit is workingproperly C. schottkydiode D. hot-carrierdiode

CHAPTER 3 64. An infrared LED is optically coupled to a photodiode.


When the LED is turned off, the reading on an ammeter
54. The cathode of zener diode in a voltage regulator is is series with the reverse-biased photodiodewill
normally A. increase B. notchange
A. more negative than theanode C. fluctuate D.decrease
B. more positive than theanode
C. at + 0.7V 65. In order for a system to function properly, the various
D. grounded types of circuits that make up the system mustbe
A. properlybiased B. properlyconnected
55. If a certain zener diode has a zener voltage of 3.6 V, it C. properlyinterfaced D. all of theabove
operatesin E. answer a andb
A. avalanchebreakdown
B. zenerbreakdown CHAPTER 4
C. regulatedbreakdown
D. forwardconduction 66. The three terminals of a bipolar junction transistor are
called
56. For a certain 12 V zener diode, a 10 mA change in zener A. input,output,ground C. p,n,p
current produces a 0.1 V change in zener voltage. The B. base,emitter,collector D. n,p,n
zener impedance for this current rangesis
A. 0.1Ω B. 100Ω 67. In a pnp transistor, the p-regionare
C. 10Ω D. 1Ω A. base andemitter
B. base andcollector
57. ThedatasheetforaparticularzenergivesVZ=10VatIZT C. emitter andcollector
= 500 mA. ZZfor these conditions is
A. 20Ω B. 50Ω 68. For operation as an amplifier, the base of a npn
C. 10Ω D.unknown transistor mustbe
A. 0V
B. negative with respect to theemitter
C. positive with respect to thecollector
D. positive with respect to theemitter
69. The emitter current isalways C. greater than the collectorcurrent
A. greater than the basecurrent D. answer a andc
B. less than the collectorcurrent
70. The βDCof a transistor isits 82. Ideally, a dc load line is s straight line drawn on the
A. internalresistance B. powergain collector characteristics curvesbetween
C. voltagegain D. current gain A. the Q-point andsaturation
B. VCE(cut off) andIC(sat)
71. If ICis 50 times larger than IB, then βDCis C. the Q-point andcut-off
A. 500 B. 0.02 D. IB= 0 and IB= IC/βDC
C. 100 D.50
83. If a sinusoidal voltage is applied to the base of a biased
72. The approximate voltage across the forward-biased base npn transistor and the resulting sinusoidal collector
emitter junction of a silicon BJTis voltage is clipped near zero volts, the transistoris
A. 0.3V B. 0.7V A. being driven intosaturation
C. 0V D.VBB B. being driven into cutoff
C. operatingnonlinearly
73. The bias condition for a transistor to be used as linear D. answer a andc
amplifier iscalled E. answer b andc
A. reverse-reverse B.forward-reverse
C. collectorbias D. forward-forward 84. The input resistance at the base of a biased transistor
depends mainlyon
74. If the output of a transistor amplifier is 5 V rms and the A. βDC B. βDCand RE
input is 100 mV rms, the voltage gainis C. RB D.RE
A. 50 B. 500
C. 5 D. 100 85. In a voltage-divider biased transistor circuit such as
Figure 5 –13, RIN(base)can generally be neglected in
75. When operated in cutoff and saturation, the transistor calculation when
actslike A. RIN(base)>10R2 B. R1<<R2
A. aswitch B. a linearamplifier C. RIN(base)>R2 D. R2 > 10RIN(base)
C. avariablecapacitor D. a variableresistor
86. In a certain voltage-divider biased npn transistor,VBis
76. In cutoff, VCEis 2.95 V. The dc emitter voltage is approximately
A. 0V B. minimum A. 2.95V B. 2.25V
C. maximum D. equal toVCC C. 0.7V D. 3.65V
E. answer aandb F. answer c andd
87. Voltage-dividerbias
77. In saturation, VCEis A. can be essentially independent ofβDC
A. 0.7V B. equal toVCC B. is not widelyused
C. maximum D.minimum C. cannot be independent ofβDC
D. requires fewer components than all the other
78. To saturate aBJT, methods
A. IB >IC(sat)/βDC
B. IB =IC(sat) 88. The disadvantage of base bias isthat
C. VCCmust be at least 10V A. it produces lowgain
D. the emitter must begrounded B. it is verycomplex
C. it produces high leakagecurrent
79. Once in saturation, a further increase in base currentwill D. it is too betadependent
A. not affected the collectorcurrent
B. cause the collector current todecrease 89. Emitter biasis
C. cause the collector current toincrease A. essentially independent ofβDC
D. turn the transistoroff B. very dependent ofβDC
C. provides a stable biaspoint
80. If the base-emitter junction is open, the collector voltage D. answer a andc
is
A. floating B. VCC 90. In an emitter bias circuit, RE= 2.7 k Ω and VEE= 15 V. The
C. 0V D. 0.2V emittercurrent
A. is180mA B. is 2.7mA
CHAPTER 5 C. is5.3mA D. cannot bedetermined

81. The maximum value of collector current in a biased 91. Collector-feedback biasis
transistoris A. based on the principle of negativefeedback
A. βDCIB B. IC(sat) B. based on betamultiplication
C. greaterthanIE D. IE-IB C. based on the principle of positivefeedback
D. not verystable

92. In a voltage-divider biased npn transistor, if the upper


voltage-divider resistor (the one connected to V CCopens,
A. the transistor burnsout
B. the transistor goes intosaturation
C. the transistor goes intocutoff
D. the supply voltage is toohigh
93. In a voltage-divider biased npn transistor, if the lower C. the transistor is notaffected
voltage-divider resistor (the one connected to VCC)opens. D. the transistor may be driven intocutoff
A. the collector current willdecrease
B. the transistor may be driven intosaturation 94. In a voltage-divider biased pnp transistor, there is no base
current, but the base voltage is approximately correct. 104.In a darlington pair configuration, each transistor has an
The most likely problem(s)is ac beta of 125. If REis 560 Ω, the input resistanceis
A. a bias resistor isopen A. 560Ω B. 70Ω
B. the collector resistor isopen C. 140kΩ D. 8.75MΩ
C. the base-emitter junction isopen
D. the emitter resistor isopen 105.The input resistance of a common-base amplifieris
E. answer a andc A. the same as aCC
F. answer c and d B. the same as aCE
C. verylow
CHAPTER6 D. veryhigh

95. A small-signalamplifier 106.In a common-emitter amplifier with voltage-divider bias,


A. is always a common-emitteramplifier Rin(base)= 68 kΩ, R1= 33 kΩ, and R2= 15 kΩ. The total input
B. always has an output signal in the mVrange resistanceis
C. uses only a small portion of its loadline A. 22.2kΩ B. 68kΩ
D. goes into saturation once on each inputcycle C. 8.95kΩ D. 12.3kΩ

96. The parameter hfecorrespondsto 107.A CE amplifier is driving a 10 kΩ load. If RC= 2.2 kΩ and
A. βAC B. βDC r’e= 10 Ω, the voltage gain isapproximately
C. r’c D.r’e A. 180 B. 220
C. 10 D.1000
97. If the dc emitter current in a certain transistor amplifier is
3 mA, the approximate value of r’eis 108.The overall gain found in Question 14 can be expressed
A. 3Ω B. 3kΩ in decibelsas
C. 0.33kΩ D. 8.33Ω A. 47.0dB B. 35.6dB
C. 94.1dB D. 69.8dB
98. A certain common-emitter amplifier has a voltage gainof
100. If the emitter bypass capacitor isremoved, CHAPTER 7
A. the voltage gain willdecrease
B. the voltage gain willincrease 109.The JFETis
C. the circuit will becomeunstable A. a unipolardevice
D. the Q-point willshift B. a voltage-controlleddevice
C. a current-controlleddevice
99. For a common-collector amplifier, R E= 100 Ω, r’e= 10 Ω, D. answer a andc
and βAC= 150. The ac input resistance at the baseis E. answer a and b
A. 16.5Ω B. 15kΩ
C. 110Ω D. 1500Ω 110.The channel of a JFET is betweenthe
A. drainandsource B. gate anddrain
100.If a 10 mV signal is applied to the base of the emitter- C. inputandoutput D. gate andsource
follower circuit in Question 5, the output signal is
approximately 111.A JFET always operateswith
A. 1.5mV B. 10mV A. the gate connected to thesource
C. 100mV D. 150mV B. the gate-to-source pn junctionforward-biased
C. the gate-to-source pn junctionreverse-biased
101.For a common-emitter amplifier, R C= 1.0 kΩ, RE= 390 Ω, D. the drain connected toground
and βac= 75. Assuming the REis completely bypassed at
the operating frequency, the voltage gainis 112.For VGS= 0 V, the drain current becomes constant when
A. 2.56 B.66.7 VDSexceeds
C. 2.47 D.75 A. 0V B.Vp
C. VDD D.cutoff
102.In the circuit of Question 7, if the frequency is reduced to
the point where XC(bypass)= RE, the voltagegain 113.The constant-current area of a FET liesbetween
A. remainsthesame B. isless A. pinch-offandbreakdown B. 0 andIDSS
C. isgreater D. C. cutoffand saturation D. cutoff andpinch-off

103.In a certain emitter-follower circuit, the current gainis 114.IDSSis


50. The power gain isapproximately A. the drain current atcutoff
A. 50AV B. 50 B. the maximum possible draincurrent
C. 1 D.answer a andb C. the drain current with the sourceshorted
D. the midpoint draincurrent

115.Drain current in the constant-current area increases


when
A. the drain-to-source voltagedecreases
B. the gate-to-source bias voltageincreases
C. the gate-to-source bias voltagedecreases
D. the drain-to-source voltageincreases
116.In a certain FET circuit, VGS= 0 V, VDD= 15 V, IDSS= 15 mA, 117.At cutoff, the JFET channelis
and RD= 470 Ω. If RDis decreased to 330 Ω, IDSSis A. completely closed by the depletionregion
A. 1mA B. 10.5mA B. at its widepoints
C. 19.5mA D. 15mA C. extremelynarrow
D. reverse-biased
129.In a certain CS amplifier, RD= 1.0 kΩ, RS= 560 Ω, VDD= 10 V,
118.A certain JFET data sheet gives VGS(off)= - 4 V. The pinch- and gm= 4500 μS. If the source resistor is completely
off voltage,Vp, bypassed, the voltage gainis
A. cannotbedetermined B. is –4V A. 450 B.45
C. dependsonVGS D. is + 4V C. 4.5 D.2.52

119.The JFET in Question10 130.Ideally, the equivalent circuit of a FETcontains


A. is ann channel B. is a pchannel A. a current source in series with aresistance
C. can beeither D. B. a resistance between drain and sourceterminals
C. a current source between gate and sourceterminals
120.For a certain JFET, IGSS= 10 nA at VGS= 10 V. The input D. a current source between drain and source terminals
resistanceis
A. 1MΩ B. 1000MΩ 131.The value of the current source in Question 4 is
C. 100MΩ D. 1000mΩ dependent onthe
A. transconductance and gate-to-sourcevoltage
121.For a certain p-channel JFET, VGS(off)= 8 V. The value B. dc supplyvoltage
ofVGSfor an approximately midpoint biasis C. external drainresistance
A. 2.34V B. 0V D. answer b andc
C. 4V D. 1.25V
132.A certain common-source amplifier has a voltage gain of
122.A MOSFET differs from a JFET mainlybecause 10. If the source bypass capacitor isremoved,
A. of the powerrating A. the voltage gain willincrease
B. the JFET has a pnjunction B. the transconductance willincreases
C. MOSFETs do not have a physicalchannel C. the voltage gain willdecreases
D. the MOSFET has twogates D. the Q-point willshift

123.A certain D-MOSFET is biased at VGS= 0 V. Its data sheet 133.A CS amplifier has a load resistance of 10 kΩ and R D= 820
specifies IDSS= 20 mA and VGS(off)= - 5 V. The value of the Ω, If gm= 5 mS and Vin= 500 mV, the output signal
draincurrent voltageis
A. is0A B. cannot bedetermined A. 1.89 V B. 2.05 V
C. is20mA D. C. 25V D. 0.5 V

124.An n-channel D-MOSFET with positive VGSis operating in 134.If the load resistance in Question 7 is removed, the
A. thedepletionmode B. cutoff output voltage will
C. theenhancementmode D.saturation A. staythesame B. decrease
C. increase D. bezero
125.A certain p-channel E-MOSFET has a V GS(th)= - 2 V. If V GS= 0
V, the drain currentis 135.A certain common-drain (CD) amplifier with R S= 1.0 kΩ
A. 0A B.maximum has a transconductance of 6000 μS. The voltage gain is
C. IDSS D.ID(on) A. 1 B. 0.86
C. 0.98 D.6
126.A TMOSFET is a special typeof
A. JFET B. D-MOSFET 136.The data sheet for the transistor used in a CD amplifier
C. answer aandc D. E-MOSFET specifies IGSS= 5 nA at V GS= 10 V. If the resistor from ate to
ground, RG, is 50 MΩ, the total input resistance is
CHAPTER8 approximately.
A. 50MΩ B. 200MΩ
127.In a common-source amplifier, the output voltage is 180˚ C. 40MΩ D. 20.5MΩ
out of phase with theinput
A. in phase with theinput 137.The common-gate (CG) amplifier differs from both the CS
B. taken at thesource and CD configuration in that it hasa
C. taken at thedrain A. much higher voltagegain
D. answer a andc B. much lower voltagegain
E. answer a andd C. much higher inputresistance
D. much lower inputresistance
128.In a certain common-source (CS) amplifier, V DS= 3.2 V rms
and VGS= 280 mV rms. The voltage gainis 138.If you are looking for both good voltage gain and high
A. 1 B. 11.4 input resistance, you must use a
C. 8.75 D.3.2 A. CSamplifier B. CDamplifier
C. CGamplifier D.

139.For small-signal operation, an n-channel JFET must be


biasedat
A. VGS =0V B. VGS =VGS(off)
C. -VGS(off)<VGS<0V D. VGS =VGS(off)
E. 0V<VGS<+VGS(off)
140.Two FET amplifier are cascaded. The first stage has a
voltage gain of 5 and the second stage has a voltage gain 141.If there is an internal open between the drain and source
of 7. The overall voltage gainis in a CS amplifier, the drain voltage is equalto
A. 35 A. 0V B. VDD
B. 12 C. a value lessthan normal D. VGS
C. dependent on the second stageloading
CHAPTER 9 152.A current mirror in a push-pull amplifier should give an
ICQthatis
142.An amplifier that operates in the linear region at all times A. equal to the current in the bias resistors anddiodes
is B. twice the current in the bias resistors anddiodes
A. ClassA B. ClassAB C. half the current in the bias resistors anddiodes
C. ClassB D. ClassC D. zero

143.A certain class A power amplifier delivers 5 W to a load 153.The maximum efficiency of a class B push-pull amplifieris
with an input signal power of 100 mW. The power gain is A. 25% B.50%
A. 100 B.50 C. 79% D. 98%
C. 250 D.5
154.The output of a certain two-supply class B push pull
144.The peak current a class A power amplifier can deliver to amplifier has a VCCof 20 V. If the load resistance is 50 Ω,
a load depends onthe the value of IC(sat)is
A. maximum rating of the powersupply A. 5mA B. 0.4A
B. quiescentcurrent C. 4mA D. 40mA
C. current in the biasresistor
D. size of the heatsink 155.The maximum efficiency of a class AB amplifieris
A. higher than a classB
145.For maximum output, a class A power amplifier must be B. the same as classB
maintain a value of quiescent current thatis C. about the same as a classA
A. one-half the peak loadcurrent D. slightly less than a classB
B. twice the peak loadcurrent
C. at least as large as the peak loadcurrent 156.The power dissipation of a class C amplifier isnormally
D. just above the cutoffvalue A. verylow B. veryhigh
C. the same as aclassB D. the same as a classA
146.A certain class A power amplifier has V CEQ= 12 V and ICQ= 1
A. The maximum signal power outputis 157.The efficiency of a class C amplifieris
A. 6W B. 12W A. less than classA
C. 1W D. 0.707W B. less than classB
C. less than classAB
147.The efficiency of a power amplifier is the ratio of the D. greater than classes A, B, orAB
power delivered to the load tothe
A. input signalpower 158.The transistor in a class C amplifier conductsfor
B. power dissipated in the laststage A. more than 180˚ of the inputcycle
C. power from the dc powersupply B. one-half of the inputcycle
D. none of theseanswer C. a very small percentage of the inputcycle
D. all of the inputcycle
148.The maximum efficiency of a class A power amplifieris
A. 25% B. 50% CHAPTER 10
C. 79% D. 98%
159.The low-frequency response of an amplifier is
149.The transistor is a class B amplifier arebiased determined in part by
in saturation
A. into cutoff B. A. the voltagegain
right C. at midpoint of the load line D. at B. the type oftransistor
cutoff C. the supplyvoltage
D. the couplingcapacitors
150.Crossover distortion is a problemfor
A. classAamplifiers B. class AB 160.The high-frequency response of an amplifier is
amplifiers determined in part by
C. classBamplifiers D. all of these A. the gain-bandwidthproduct
amplifiers B. the bypasscapacitor
C. the internal transistorcapacitances
151.A BJT class B push-pull amplifier with no transformer D. theroll-off
couplinguses
A. twonpntransistors B. two pnptransistors 161.The bandwidth of an amplifier is determinedby
C. complementary symmetrytransistors A. the midrangegain
D. none ofthese B. the criticalfrequencies
C. the roll-offrate
D. the inputcapacitance

162.The gain of a certain amplifier decrease by 6 dB when the


frequency is reduced from 1 kHz to 10 Hz. The roll-offis
A. - 3dB/decade
B. - 6dB/decade
C. - 3dB/octave
D. - 6dB/octave
163.The gain of a particular amplifier at a given frequency C. - 6dB/octave
decreases by 6 dB when the frequency is doubled. The D. answer b andc
roll-offis
A. - 12dB/decade 164.The miller input capacitance of an amplifier is dependent,
B. - 20dB/decade in part, on
A. the input couplingcapacitor CHAPTER 11
B. the voltagegain
C. the bypasscapacitor 174.a thyristorhas
D. none ofthese A. two pnjunctions
B. three pnjunctions
165.An amplifier has the following critical frequencies: 1.2 C. four pnjunctions
kHz, 950 Hz, 8 kHz, and 8.5 kHz. The bandwidthis D. only twoterminals
A. 7550Hz B. 7300Hz
C. 6800Hz D. 7050Hz 175.Common types of thyristors includes
A. BJTs andSCRs
166.Ideally, the midrange gain of anamplifier B. UJTs andPUTs
A. increase withfrequency C. FETs andtriacs
B. decrease withfrequency D. diacs andtriacs
C. remains constant withfrequency
D. depends on the couplingcapacitors 176.A 4-layer didoe turns on when the anode to cathode
voltage exceeds
167.The frequency at which an amplifier’s gain is 1 is called A. 0.7V
the B. the gatevoltage
A. unity-gainfrequency C. the forward-breakovervoltage
B. midrangefrequency D. the forward-blocking voltage
C. cornerfrequency
D. breakfrequency 177.Once it conducting, a 4-layer diode can be turned offby
A. reducing the current below a certainvalue
168.When the voltage gain of an amplifier is increased, the B. disconnecting the anodevoltage
bandwidth C. answer a andb
A. is notaffected D. neither answer a norb
B. increases
C. decreases 178.An SCR differs from 4-layer diodebecause
D. becomesdistorted A. it has a gateterminal
B. it is notthyristor
169.If the frof the transistor used in a certain amplifier is 75 C. it does not have fourlayers
MHz and the bandwidth is 10 MHz, the voltage gain must D. it cannot be turned on andoff
be
A. 750 B.7.5 179.An SCR can be turned offby
C. 10 D.1 A. forcedcommutation
B. a negative pulse on thegate
170.In the midrange of an amplifier’s bandwidth, the peak C. anode currentinterruption
output voltage is 6 V. At the lower critical frequency, the D. answer a, b andc
peak output voltageis D. answer a and c
A. 3V B. 3.82V
C. 8.48V D. 4.24V 180.In the forward-blocking region, the SCRis
A. reverse-biases
171.At the upper critical frequency, the peak output voltage B. in the offstate
of a certain amplifier is 10 V. The peak voltage in the C. in the onstate
midrange of the amplifieris D. at the point ofbreakdown
A. 7.07V B. 6.37V
C. 14.14V D. 10V 181.The specified value of holding current for an SCR means
that
172.In the step response of a noninverting amplifier, a longer A. the device will turn on when the anode current
rise timemeans exceeds thisvalue
A. anarrowerbandwidth B. a lowerfcl B. the device will turn off when the anode currentfalls
C. ahigherfcu D. answer a andb below thisvalue
C. the device may be damaged if the anode current
173.The lower critical frequency of a direct-coupled amplifier exceeds thisvalue
with no bypass capacitoris D. the gate current must be equal or exceeds this value
A. variable B. 0Hz to turn the deviceon
C. dependent onthebias D. none ofthese
182.The diacis
A. athyristor
B. a bilateral, two terminaldevice
C. like two parallel 4-layer diode in reversedirections
D. answer a, b andc

183.The triacis
A. like a bi-directionalSCR
B. a four-terminaldevice
C. not athyristor
D. answer a andb
184.The SCS differs from the SCRbecause D. it has two gateterminals
A. it does not have a gateterminal
B. its holding current isless 185.The SCS can be turned onby
C. it can handle much highercurrents A. an anode voltage that exceeds forward-breakover
voltage 195.In the commonmode,
B. a positive pulse on the anodegate A. both inputs aregrounded
C. a negative pulse on the anodegate B. the output are connectedtogether
D. either b or c C. an identical signal appears on bothinputs
D. the output signals arein-phase
186.The SCS can be turned offby
A. a negative pulse on the cathode gate and a positive 196.Common-mode gainis
pulse on the anodegate A. veryhigh B. verylow
B. reducing the anode current to below the holding C. alwaysunity D.unpredictable
value
C. answer a andb 197.If Av(d)= 3500 and Acm= 0.35, the CMRRis
D. a positive pulse on the cathode gate and a negative A. 1225 B. 10,000
pulse on the anodegate C. 80dB D. answers b andc

187.Which of the following is not a characteristic of theUJT? 198.With zero volts on both inputs, an op-amp ideally should
A. intrinsic standoffratio have an output equalto
B. negativeresistance A. the positive supplyvoltage
C. peak-pointvoltage B. the negative supplyvoltage
D. bilateralconduction C. zero
D. theCMRR
188.The PUTis
A. much like theUJT 199.Of the valued listed, the most realistic value for open-
B. not athyristor loop gain of an op-ampis
C. triggered on and off by the gate-to-anodevoltage A. 1 B. 2000
D. not a four-layerdevice C. 80db D.100,000

189.In a phototransistor, base currentis 200.A certain op-amp has a bias current of 50μA and 49.3μA.
A. set by biasvoltage The input offset current is
B. directly proportional tolight A. 700nA B. 99.3μA
C. inversely proportional tolight C. 49.7μA D. none ofthese
D. not afactor
201.Theoutputofaparticularop-ampincreases8Vin12μs.
CHAPTER 12 The slew rate is
A. 96V/μs B. 0.67 V/μs
190.An integrated circuit (IC) op-amphas C. 1.5V/μs D. none of theabove
A. two inputs and twooutputs
B. one input andone-output 202.The purpose of offset nulling isto
C. two inputs and oneoutput A. reducegain
B. equalize the inputsignals
191.Which of the following characteristics does not C. zero the output errorvoltage
necessarily apply to an op-amp?
A. high gain B. lowpower 203.For an op-amp with negative feedback, the outputis
C. highinputimpedance D. low outputimpedance A. equal to theinput
B. increased
192.A differentialamplifier C. fed back to the invertinginput
A. is part of anop-amp D. fed back to the noninvertinginput
B. has one input and oneoutput
C. has twooutputs 204.The use of negativefeedback
D. answer a andc A. reduces the voltage gain of anop-amp
B. makes the op-amposcillate
193.When an op-amp is operated in the single-ended mode, C. makes linear operationpossible
the output isgrounded D. answer a andc
A. one input is grounded and a signal is applied to the
other 205.Negativefeedback
B. both inputs are connectedtogether A. increases the input and outputimpedances
C. the output is notinverted B. increases the input impedance and thebandwidth
C. decreases the output impedance and thebandwidth
194.In the differential mode, D. does not affect impedances ofbandwidth
A. opposite polarity signals are applied to theinputs
B. the gain is1 206.A certain inverting amplifier has an Riof 0.1 kΩ and an
C. the output are differentamplitudes Rfof 100 kΩ. The closed loop gain is
D. only one supply voltage usused A. 100,000 B. 1000
C. 101 D.100

207.If the feedback resistor in Question 17 is open, the


voltage gain is
A. increases B. decreases
C. isnotaffected D. depends on Ri
208.A certain inverting amplifier has a closed-loop gain of 25. A. doubles B. drops to 12.5
The op-amp has an open-loop gain of 100,000. if another C. remainsat 25 D. increasesslightly
op-amp with an open loop gain of 200,000 is substituted
in the configuration, the closed-loopgain 209.A voltage follower
A. has a gainof1 B. isnoninverting CHAPTER 13
C. has nofeedbackresistor D. has all ofthese
219.In a zero-level detector, the output changes state when
210.The bandwidth of an ac amplifier having a lower critical theinput
frequency of 1 kHz and an upper critical frequency of 10 A. ispositive B. isnegative
kHz is C. crosseszero D. has a zero rate ofchange
A. 1kHz B. 9kHz
C. 10kHz D. 11kHz 220.The zero-level detector is one application ofa
A. comparator B.differentiator
211.The bandwidth of a dc amplifier having an upper critical C. summingamplifier D.diode
frequency of 100 kHzis
A. 100kHz B. unknown 221.Noise on the input of a comparator can cause the output
C. infinity D. 0kHz to
A. hang up in onestate
212.The midrange open-loop of an opamp B. go tozero
A. extends from lower critical frequency to the upper C. change back and forth erratically between two states
criticalfrequency D. produce the amplified noisesignal
B. extends from 0 Hz to the upper criticalfrequency
C. rolls off at 20 db/decade beginning at 0Hz 222.The effect the noise can be reducedby
D. answers a andc A. lowering the supplyvoltage
B. using positivefeedback
213.The frequency at which the open-loop gain is equal to 1 C. using negativefeedback
iscalled D. usinghysteresis
A. the upper criticalfrequency E. answer b andd
B. the cutofffrequency
C. the notchfrequency 223.A comparator withhysteresis
D. the unity-gainfrequency A. has one triggerpoint
B. has two triggerpoints
214.Phase shift through an op-amp is causedby C. has a variable triggerpoint
A. the internal RCcircuits D. is like a magneticcircuit
B. the external RCcircuits
C. the gainroll-off 224.In a comparator withhysteresis
D. negativefeedback A. a bias voltage is applied between the twoinputs
B. only one supply voltage isused
215.Each RC circuit in anop-amp C. a portion of the output is feedback to the inverting
A. causes the gain to roll off at – 6dB/octave input
B. causes the gain to roll off at – 20db/octave D. a portion of the output is feedback to the
C. reduces the midrange gain by 3dB noninvertinginput
D. answer a andb
225.Using the output bounding in acomparator
216.When negative feedback is used, the gain-bandwidth A. makes faster
product of anop-amp B. keeps the outputpositive
A. increases B. decreases C. limits the outputlevels
C. staysthesame D. fluctuates D. stabilizes theoutput

217.If a certain op-amp has a midrange open-loop gain of 226.A summing amplifier canhave
200,000 and a unity gain frequency of 5 MHz, the gain- A. only oneinput
bandwidth product is B. only twoinputs
A. 200,000 Hz C. any number ofinputs
B. 1 x 1012Hz
C. 5,000,000 Hz 227.If the voltage gain for each input of a summing amplifier
D. not determinable from the information with a 4.7 kΩ feedback resistor is unity, the input resistor
must have a valueof
218.If a certain op-amp has a closed-loop gain of 20 and an A. 4.7kΩ
upper critical frequency of 10 MHz, the gain-bandwidth B. 4.7 kΩ divided by number ofinputs
productis C. 4.7 kΩ times the number ofinputs
A. 200MHz B. 10MHz
C. theunity-gainfrequency D. answer a andc 228.An average amplifier has five inputs. The ratio R fIRimust
be
A. 5 B. 0.2
C. 1

229.In a scaling adder, the input resistorsare


A. all the samevalue
B. all of differentvalues
C. each proportional to the weight of itsinput
D. related by a factor oftwo
230.In an integrator, the feedback element isa A. apulse B. a triangularwaveform
A. resistor B. capacitor C. aspike D. aramp
C. zenerdiode D. voltagedivider
232.The rate of change of an integrator’s output voltage in
231.For a step input, the output of an integratoris response to a step input is setby
A. the RC timeconstant 241.The stage of most isolation amplifiers are connectedby
B. the amplitude of the stepinput A. copperstrips B.transformers
C. the current through thecapacitor C. microwavelinks D. currentloops
D. all ofthese
242.The characteristics that allows an isolation amplifier to
233.In a differentiator, the feedback elementis amplify small signal voltages in the presence of much
A. resistor B. capacitor greater noise voltages isits
C. zenerdiode D. voltagedivider A. CMRR
B. high gain
234.The output of a differentiator is proportionalto C. high input impedance
A. the RC timeconstant D. magnetic coupling between input andoutput
B. the rate at which the input ischanging
C. the amplitude of theinput 243.The term OTAmeans
D. answer a andb A. operational transistoramplifier
B. operational transformeramplifier
235.When you apply a triangular waveform to the input of a C. operational transconductanceamplifier
differentiator, the outputis D. output transduceramplifier
A. a dclevel
B. an inverted triangular waveform 244.In an OTA, the transconductance is controlledby
C. a squarewaveform A. the dc supplyvoltage
D. the first harmonic of the triangularwaveform B. the input signalvoltage
C. the manufacturingprocess
CHAPTER 14 D. a biascurrent

236.To make a basic instrumentation amplifier, ittakes 245.The voltage gain of an OTA circuit is setby
A. one op-amp with a certain feedbackarrangement A. a feedbackresistor
B. two op-amps and sevenresistors B. the transconductanceonly
C. three op-amps and sevencapacitors C. the transconductance and the loadresistor
D. three op-amps and seven resistors D. the bias current and supplyvoltage

237.Typically, an instrumentation amplifier has an external 246.An OTA is basicallya


resistor usedfor A. voltage-to-currentamplifier
A. establishing the inputimpedance B. current-to-voltageamplifier
B. setting the voltagegain C. current-to-currentamplifier
C. setting the currentgain D. voltage-to-voltageamplifier
D. interfacing with aninstrument
247.The operation of a logarithmic amplifier is basedon
A. the nonlinear operation of anop-amp
B. the logarithmic characteristics of a pnjunction
C. the reverse breakdown characteristics of a pn
junction
D. the logarithmic charge and discharge of an RCcircuit

248.If the input to a log amplifier is x, the output is


proportionalto
A. ex x B. Inx x
C. log D. 2.3 log
10 10
238.Instrumentation amplifiers are used primarilyin E. answer aandc F. answer b andd
A. high-noiseenvironments
B. medicalequipment 249.If the input to an antilog amplifier is x, the output is
C. testinstruments proportionalto
D. filtercircuits A. elnx B. ex
C. Inx D. e-x
239.Isolation amplifiers are used primarily in remote, isolated
locations systems that isolate a single signal from many 250.The logarithm of the product of two numbers is equal to
differentsignals the
A. applications where there are high voltages and A. sum of the twonumbers
sensitive B. sum of the logarithms of each of thenumbers
B. equipment C. ratio of the logarithm of thenumbers
C. applications where human safety is aconcern
D. answer c andd 251.If you subtract In y from In x, youget
A. Inx/Iny B. (In x)(Iny)
240.The three parts of a basic isolation amplifierare C. In(x/y) D.In(y/x)
A. amplifier, filter, andpower
B. input, output, andcoupling CHAPTER 15
C. input, output, andpower
D. gain, attenuation, andoffset 252.The term pole in filter terminology refersto
A. ahigh-gainop-amp B. one complete activefilter
C. a singleRCcircuit D. the feedbackcircuit
253.A single resistor and a single capacitor can be connected B. - 40dB/decade
to form a filter with a roll-off rateof C. - 6dB/octave
A. - 20dB/decade D. answer a andc
265.When the gain of a filter is minimum at its center
254.A band-pass responsehas frequency, itis
A. two criticalfrequencies A. a band-passfilter
B. one criticalfrequency B. a band-stopfilter
C. a flat curve in thepassband C. a notchfilter
D. a widebandwidth D. answer b and c

255.The lower frequency passed by a low-pass filteris CHAPTER16


A. 1Hz B. 0 Hz
C. 10Hz D. dependent on the criticalfrequency 266.An oscillator differs from an amplifierbecause
A. it has moregain
256.The quality factor (Q) of a band-pass filter dependson B. it requires no inputsignal
A. the criticalfrequencies C. it requires no dcsupply
B. only thebandwidth D. it always has the sameoutput
C. the center frequency and thebandwidth
D. only the centerfrequency 267.Wien-bridge oscillators are basedon
A. positivefeedback
257.The damping factor of an active filterdetermines B. negativefeedback
A. the voltagegain C. the piezoelectriceffect
B. the criticalfrequency D. high gain
C. the responsecharacteristics
D. the roll-offrate 268.One condition for oscillationis
A. a phase shift around the feedback loop of180˚
258.A maximally flat frequency response is knownas B. a gain around the feedback loop ofone-third
A. chebyshev B. butterworth C. a phase shift around the feedback loop of0˚
C. Bessel D.colpitts D. a gain around the feedback loop of less than1

259.The damping factor of a filter is setby 269.A second condition for oscillationis
A. the negative feedbackcircuit A. no gain around the feedbackloop
B. the positive feedbackcircuit B. a gain of 1 around the feedbackloop
C. the frequency-selectivecircuit C. the attenuation of the feedback circuit must be one-
D. the gain of theop-amp third
D. the feedback circuit must becapacitive
260.The number of poles in a filter affectthe
A. voltagegain B. bandwidth 270.In a certain oscillator, AV= 50. The attenuation of the
C. centerfrequency D. roll-off rate feedback circuit mustbe
A. 1 B. 0.01
261.Sallen-Key filtersare C. 10 D. 0.02
A. single-polecircuit
B. second-orderfilters 271.For an oscillator to properly start, the gain around the
C. butterworth filters feedback loop must initially be
D. band-passfilters A. 1 B. less than1
C. greaterthan1 D. equal toB
262.When filters are cascaded, the roll-offrate
A. increases B. decreases 272.In a Wien-bridge oscillator, if the resistance in the
C. does notchange positive
A. feedback circuit are decreased, the frequency
263.When the low-pass and a high-pass filter are cascaded to B. decreases
get a band-pass filter, the critical frequency of the low- C. increases
pass filter mustbe D. remains thesame
A. equal to the critical frequency of the high-passfilter
B. less than the critical frequency of the high-passfilter 273.The Wien-bridge oscillator’s positive feedback circuitis
C. greater than critical frequency of the high-pass filter A. an RLcircuit B. an LCcircuit
C. avoltagedivider D. a lead-lagcircuit
264.A state-variable filter consist of
A. one op-amp with multiple-feedbackpaths 274.A phase-shift oscillatorhas
B. a summing amplifier and twointegrators A. threeRCcircuits B. three LCcircuits
C. a summing amplifier and twodifferentiators C. aT-typecircuit D. a π-typecircuits
D. three butterworthstages
275.Colpitts, Clapp, and Hartley are names referto
A. types of RCoscillation
B. inventors of thetransistor
C. types of LCoscillators
D. types offilters

276.An oscillator whose frequency is charged by a variable dc


voltage is knownas
A. acrystaloscillator B. aVCO
C. anArmstrongoscillator D. a piezoelectricdevice
277.The main feature of a crystal oscillatoris
A. economy B. reliability 278.The operation of a relaxation oscillator is basedon
C. stability D. highfrequency A. the charging and discharging of acapacitor
B. a highly selective resonantcircuit 289.The frequency spectrum of a balanced modulator
C. a very stable supplyvoltage contains
D. low powerconsumption A. a sumfrequency
B. a differencefrequency
279.Which of the following is not an input or output of the C. a carrierfrequency
555timer? D. answer a, b, andc
A. threshold B. controlvoltage E. answers a andb
C. clock D.trigger F. answers b andc
E. discharged F. reset
290.The IF in a receiver isthe
CHAPTER 17 A. sum of the local oscillator frequency and theRF
carrierfrequency
280.In amplitude modulation, the pattern produced by the local oscillator frequency
peaks of the carrier signal is calledthe B. difference of the local oscillator frequency and the
A. index B.envelope carrier RFfrequency
C. audiosignal D. upper-sidefrequency C. difference of the carrier frequency and theaudio
frequency
281.Which of the following is not a part of an AM
superheterodynereceiver? 291.When a receiver is tuned from one RF frequency to
A. mixer B. IFamplifier another, the IF changes by an amount equal to the LO
C. DCrestorer D.detector (local oscillator)frequency
E. audioamplifier F. local oscillator A. the IF stays thesame
B. the LO frequency changes by an amount equal to the
282.In an AM receiver, the local oscillator always produces a audiofrequency
frequency that is above the incoming RFby C. both LO and the IF frequencieschange
A. 10.7kHz B. 455MHz
C. 10.7MHz D. 455kHz 292.The output of the AM detector goes directly tothe
A. IFamplifier B. mixer
283.An FM receiver has an IF frequency thatis C. audioamplifier D.speaker
A. in the 88 MHz to 108 MHzrange
B. in the 540 kHz to 1640 kHzrange 293.If the control voltage to a VCO increases, the output
C. 455kHz frequency
D. greater than the IF in an AMreceiver A. decreases
B. does notchange
284.The detector or discriminator in an AM or an FMreceiver C. increases
A. detects the difference frequency frommixer
B. changes the RF toIF 294.A PLL maintains lock bycomparing
C. recovers the audiosignal A. the phase of twosignals
D. maintains a constant IFamplitude B. the frequency of twosignals
C. the amplitude of twosignals
285.In order to handle all combinations of input voltage
polarities, a multiplier musthave Chapter 18
A. four-quadrantcapability
B. three-quadrantcapability 295.In the case of lineregulation,
C. fourinputs A. when the temperature varies, the output voltage
D. dual-supply voltages staysconstant
B. when the output voltage changes, the load current
286.The internal attenuation of a multiplier is calledthe staysconstant
A. transconductance B. scalefactor C. when the input voltage changes, the output voltage
C. reductionfactor D. staysconstant
D. when the load changes, the output voltage stays
287.When the two inputs of a multiplier are connected constant
together, the device operates asa
A. voltagedoubler 296.All of the following are parts of a basic voltage regulator
B. square rootcircuit except
C. squaringcircuit A. controlelement B. samplingcircuit
D. averagingcircuit C. voltage-follower D. errordetector
E. reference voltage
288.Amplitude modulation is basicallya
A. summing of twosignals 297.The basic series regulator, Voutis determinedby
B. multiplication of twosignals A. thecontrolelement B. the samplecircuit
C. subtraction of twosignals C. thereferencevoltage D. answers b andc
D. nonlinearprocess
298.The main purpose of current limiting in a regulatoris
A. protection of the regulator from excessivecurrent
B. protection of the load from excessivecurrent
C. to keep the power supply transformer from burning
up
D. to maintain a constant outputvoltage
299.In a linear regulator, the control transistor isconducting
A. a small part of thetime
B. half thetime
C. all of thetime
D. only when the load current isexcessive

300.In a switching regulator, the control transistor is


conducting
A. part of thetime
B. all of thetime
C. only when the input voltage exceeds a setlimit
D. only when there is anoverload

301.The LM317 is an example of anIC


A. three-terminal negative voltageregulator
B. fixed positive voltageregulator
C. switchingregulator
D. linearregulator
E. variable positive voltageregulator
F. answers b and donly
G. answers d and eonly

302.An external pass transistor is usedfor


A. increasing the outputvoltage
B. improving theregulation
C. increasing the current that the regulator canhandle
D. short circuitprotection

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