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Chapter 3 - FET

The document discusses different types of field-effect transistors (FETs) including JFETs and MOSFETs. It focuses on the junction field-effect transistor (JFET), describing its basic structure as a voltage-controlled device with three terminals - gate, source, and drain. The document explains how a reverse-biased PN junction at the gate is used to control current flow in the N-type or P-type semiconductor channel. It also covers JFET characteristics such as the drain curve and pinch-off voltage, as well as different biasing configurations including self-bias, fixed-bias, and voltage divider bias.

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Hoang Dung Son
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73 views24 pages

Chapter 3 - FET

The document discusses different types of field-effect transistors (FETs) including JFETs and MOSFETs. It focuses on the junction field-effect transistor (JFET), describing its basic structure as a voltage-controlled device with three terminals - gate, source, and drain. The document explains how a reverse-biased PN junction at the gate is used to control current flow in the N-type or P-type semiconductor channel. It also covers JFET characteristics such as the drain curve and pinch-off voltage, as well as different biasing configurations including self-bias, fixed-bias, and voltage divider bias.

Uploaded by

Hoang Dung Son
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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HCMC University of Technology and Education

FACULTY FOR HIGH QUALITY TRAINING

ELECTRONIC PRINCIPLES
www.hcmute.edu.vn
I. Introduction

FET: Field-Effect Transistor


➔JFET: Junction Field-Effect Transistor
➔MOSFET: Metal Oxide Semiconductor
Field-Effect Transistor
➔IGBT: Insulated Gate Bipolar Transistor

2
I. Introduction
▪ The term field-effect relates to the depletion region
formed in the channel of an FET as a result of a voltage
applied on one of its terminals (gate)
▪ It is a voltage-controlled device, where the voltage
between two of the terminals (gate and source)
controls the current through the device
▪ FETs are the preferred device in low-voltage switching
applications because they are generally faster than
BJTs when turned on and off. The IGBT is generally
used in high-voltage switching applications.
3
II. JFET
Basic Structure and symbol

4
II. JFET
Basic Structure and symbol

5
II. JFET
Basic Structure and symbol

Current-controlled device Voltage-controlled device


6
II. JFET
Basic Structure and symbol

JFET versus BJT.


7
II. JFET
Basic Structure and symbol

ID

IG = 0 IS

IG = 0, ID = IS

Voltage-controlled device 8
II. JFET
Basic operation

Operating
with a
reverse-
biased pn
junction to
control
current in a
channel
A biased n-channel JFET
9
II. JFET
Basic operation

JFET with VGS = 0 V and a variable VDS (VDD)


10
II. JFET
Basic operation

JFET with VGS = 0 V and a variable VDS (VDD)


11
II. JFET
Basic operation

The drain characteristic curve of a JFET for


VGS 0 showing pinch-off voltage
JFET with VGS = 0 V and a variable VDS (VDD)
12
II. JFET
Basic operation

Shockley’s equation:

JFET with VGS < 0 V 13


II. JFET
Basic operation
JFET with VGS < 0 V
When VGS =VP, ID = 0 mA
When VGS = 0 V, ID = IDSS

Shockley’s equation:

14
III. JFET BIASING
1. Self-Bias

15
III. JFET BIASING
1. Self-Bias

16
III. JFET BIASING
2. Fixed-Bias configuration

17
III. JFET BIASING
2. Fixed-Bias configuration
IDSS=10mA, VP=-4V

18
III. JFET BIASING
3. Voltage-Divider Bias

19
III. JFET BIASING
3. Voltage-Divider Bias

20
deternine Q(ID, VDS), VRD, VRS, VD, VS.

IDSS=10mA, VP=-4V

21
For the circuits shown in the following figures, deternine Q(ID, VDS), ZI, ZO, AV
Figure 2.24: IDSS=10mA, VP=-4V,

26
27
Figure 2.25: IDSS=12mA, VP=-6V
Q(ID, VDS), ZI, ZO, AV ????
VDD = 18 V

32

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