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Problem Sheet - 1: Figure 1. Conduction Band Figure 2. Valance Band

This document contains 11 practice problems related to semiconductor physics and p-n junction diodes. The problems cover topics such as effective mass, probability of energy level occupancy, density of states, intrinsic carrier concentration, Fermi energy level position, doping concentration, built-in potential, depletion width, and maximum electric field. Standard parameters for silicon at 300K are provided to aid in calculations.

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321 views2 pages

Problem Sheet - 1: Figure 1. Conduction Band Figure 2. Valance Band

This document contains 11 practice problems related to semiconductor physics and p-n junction diodes. The problems cover topics such as effective mass, probability of energy level occupancy, density of states, intrinsic carrier concentration, Fermi energy level position, doping concentration, built-in potential, depletion width, and maximum electric field. Standard parameters for silicon at 300K are provided to aid in calculations.

Uploaded by

M D
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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PYL-312

Problem Sheet -1

Figure 1. Conduction band Figure 2. Valance band

(1) Two possible conduction bands are shown in the E versus k diagram given
in Figure 1 State which band will result in the heavier electron effective mass
and why ?

(2) Two possible valance bands are shown in the E versus k diagram given in
Figure 2 State which band will result in the heavier hole effective mass and
state why.

(3) Determine the probability that an energy level is empty of an electron if the
state is below the Fermi level by ( a ) kT , ( b ) 5 kT , and ( c ) 10 kT .
Also state what do you understand from this example.

(4) For silicon Determine the total number of energy states between Ev, and Ev -
kT at T = 300 K

(5) Find the thermal-equilibrium electron and hole concentrations in silicon at


300K with doping concentrations of Na = 7 x 1015 cm-3.

(6) Calculate the position of the Fermi energy level in n-type silicon at T = 300
K with respect to the intrinsic Fermi energy level. The doping concentrations
are Nd = 2 x 1017 cm-3 and Na = 3 x 1016 cm 3.—
(7) Silicon at T = 300 K contains acceptor atoms at a concentration of Na = 5 x
1015 cm-3. Donor atoms are added forming an n-type compensated
semiconductor such that the Fermi level is 0.215 eV below the conduction-band
edge. What concentration of donor atoms are added?

(8) An abrupt silicon p-n junction at T = 300 K has impurity doping


concentrations of Na = 5 x 1016 cm-3 and Nd = 1015 cm-3. Calculate (a) Vbi, (b) W
(c) Emax at (i) VR = 0, (ii) VR = 5 V and (iii) VF = 5 V.
Also state what do you conclude from this example.

(9) A silicon p-n junction in thermal equilibrium at T = 300 K is doped such


that EF - EFi = 0.365 eV in the n region and EFi - EF = 0.330 eV in the p-region.
(a) Sketch the energy-band diagram for the p-n junction. (b) Find the impurity
doping concentration in each region. (c) Determine Vbi.

(10) The peak electric field in a reverse-biased silicon p-n junction is Emax = 3
x 105 V/cm. The doping concentrations are Nd = 4 x 1015 cm-3 and Na = 4 x 1017
cm-3. Find the magnitude of the reverse-biased voltage.

(11) Consider a uniformly doped silicon p-n junction at T = 300 K. At zero


bias, 25 percent of the total space charge region is in the n-region. The built-in
potential barrier is Vbi = 0.710 V. Determine (i) Na, (ii) Nd, (iii) xn, (iv) xp, and
(v) Emax.

Standard parameters for Si at 300 k

Nc (cm-3) Nv(cm-3) 𝑚𝑛∗ /m0 𝑚𝑝∗ /𝑚0 𝜖𝑟 ni (cm-3)


2.8 x 1019 1.04 x 1019 1.08 0.56 11.7 1.5 x 1010

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