AP0403GH

RoHS-compliant Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Low On-resistance D BVDSS 30V

▼ Simple Drive Requirement RDS(ON) 4.5mΩ
▼ Fast Switching Characteristic ID 75A
G
S

Description
Advanced Power MOSFETs from APEC provide the G
D
designer with the best combination of fast switching, □ S
TO-252(H)
ruggedized device design, low on-resistance and cost-effectiveness.

The TO-252 package is widely preferred for commercial-industrial

surface mount applications and suited for low voltage applications
such as DC/DC converters.

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±20 V
4
ID@TC=25℃ Continuous Drain Current 75 A
ID@TC=100℃ Continuous Drain Current 50 A
1
IDM Pulsed Drain Current 300 A
PD@TC=25℃ Total Power Dissipation 44.6 W
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 2.8 ℃/W
3
Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 62.5 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W

Data & specifications subject to change without notice 1

200811052
AP0403GH

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
2
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=40A - - 4.5 mΩ
VGS=4.5V, ID=30A - - 6.5 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=30A - 50 - S
IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=±20V - - ±100 nA
2
Qg Total Gate Charge ID=30A - 16.5 26 nC
Qgs Gate-Source Charge VDS=24V - 3 nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 9.6 nC
2
td(on) Turn-on Delay Time VDS=15V - 8 - ns
tr Rise Time ID=30A - 81 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 23 - ns
tf Fall Time RD=0.5Ω - 10 - ns
Ciss Input Capacitance VGS=0V - 1530 2450 pF
Coss Output Capacitance VDS=25V - 450 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 180 - pF
Rg Gate Resistance f=1.0MHz - 1.3 2 Ω

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=40A, VGS=0V - - 1.2 V
trr Reverse Recovery Time2 IS=10A, VGS=0V, - 34 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 32 - nC

Notes:
1.Pulse width limited by max. junction temperature
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
4.Package limitation current is 75A .

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

2
 AP0403GH

200 100

T C =25 C
o 10V T C =150 C
o
10V
7.0 V 7 .0V
160
6.0V 80 6.0V
5.0 V
ID , Drain Current (A)

ID , Drain Current (A)

5.0 V
V G = 4.0 V V G =4.0V
120 60

80 40

40 20

0 0
0.0 1.0 2.0 3.0 4.0 5.0 0.0 1.0 2.0 3.0 4.0

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

6 2.0

I D =30A I D =40A
T C =25 o C V G =10V

5 1.6
Normalized RDS(ON)
RDS(ON) (mΩ)

4 1.2

3 0.8

2 0.4
2 4 6 8 10 -50 0 50 100 150

V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C)o

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
30 1.6

1.2
Normalized VGS(th) (V)

20
IS(A)

o
T j =150 C T j =25 o C
0.8

10

0.4

0 0.0
0 0.4 0.8 1.2 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3
AP0403GH

8
f=1.0MHz
2000

I D =30A
1600
C iss
VGS , Gate to Source Voltage (V)

6 V DS =15V
V DS =18V
V DS =24V 1200

C (pF)
4

800

2
C oss
400

C rss

0 0
0 4 8 12 16 20 24 28 32 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

1000 1

Duty factor = 0.5

Normalized Thermal Response (Rthjc)

100

0.2

100us
ID (A)

0.1
10 1ms 0.1

0.05

10ms PDM
t
100ms 0.02
T
1
DC 0.01

T C =25 o C
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C

Single Pulse Single Pulse

0 0.01
0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1

V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%

QG
4.5V
QGS QGD

10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

4
 ADVANCED POWER ELECTRONICS CORP.

Package Outline : TO-252

D Millimeters
SYMBOLS
MIN NOM MAX
D1 A2 1.80 2.30 2.80
A3 0.40 0.50 0.60
B1 0.40 0.70 1.00
E2 D 6.00 6.50 7.00
D1 4.80 5.35 5.90
E3 3.50 4.00 4.50
E3 F 2.20 2.63 3.05
E1 F1 0.50 0.85 1.20
E1 5.10 5.70 6.30
E2 0.50 1.10 1.80
e -- 2.30 --
C 0.35 0.50 0.65

B1 F1 F

e e 1.All Dimensions Are in Millimeters.

2.Dimension Does Not Include Mold Protrusions.

A2 R : 0.127~0.381

A3 (0.1mm C

Part Marking Information & Packing : TO-252

Laser Marking
Part Number

Meet Rohs requirement

for low voltage MOSFET only
0403GH Package Code
LOGO
YWWSSS Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence